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    • 4. 发明申请
    • Three-dimensional measuring apparatus
    • 三维测量仪器
    • US20110025823A1
    • 2011-02-03
    • US12805387
    • 2010-07-28
    • Yoshihiro Sasaki
    • Yoshihiro Sasaki
    • H04N13/02
    • G01B11/24G01B21/042G06T7/579
    • A three-dimensional measuring apparatus includes a measurement stage on which an object is placed, a reference scale member having a plurality of reference points, an imaging unit, a driving mechanism, a high brightness detecting unit, and a three-dimensional measuring unit. The imaging unit captures an optical image of the object and the optical images of the plurality of reference points in the same field of view. The high brightness detecting unit detects the brightest portion of the object at each of N relative movement positions of the imaging unit and detects a reference point indicating the maximum brightness among the plurality of reference points, from a plurality of images that is continuously captured by the imaging unit. The three-dimensional measuring unit sets the height of the brightest portion at each of the relative movement positions to a height associated with the detected reference point.
    • 三维测量装置包括其上放置物体的测量台,具有多个参考点的基准标尺构件,成像单元,驱动机构,高亮度检测单元和三维测量单元。 成像单元在相同的视场中捕获对象的光学图像和多个参考点的光学图像。 高亮度检测单元在成像单元的N个相对移动位置的每一个处检测物体的最亮部分,并且从由多个参考点连续捕获的多个图像中检测指示多个参考点中的最大亮度的参考点 成像单元。 三维测量单元将每个相对运动位置处的最亮部分的高度设置为与检测到的参考点相关联的高度。
    • 8. 发明授权
    • Multiquantum-well semiconductor laser
    • 多量子阱半导体激光器
    • US5737353A
    • 1998-04-07
    • US783899
    • 1997-01-16
    • Yoshihiro Sasaki
    • Yoshihiro Sasaki
    • H01S5/34H01S3/18
    • B82Y20/00H01S5/34H01S5/3407H01S5/3416
    • A multiquantum-well semiconductor laser having a long wavelength, for use in optical communication systems, comprises an active region including a plurality of quantum-well layers each made of InGaAs or InGaAsP, and a plurality of barrier laminates each made of InGaAsP having a bandgap wider than that of the quantum-well layers. Each barrier laminate includes three barrier layers of different compositions of InGaAsP having different bandgaps. Each barrier laminate has a thickness such that the wave functions of carriers in adjacent quantum-well layers do not overlap each other, while carriers supplied to the active region can be effectively injected into the quantum-well layers, thereby obtaining a low threshold current and a high slope efficiency.
    • 具有长波长的多量子阱半导体激光器,用于光通信系统中,包括有源区,其包括由InGaAs或InGaAsP构成的多个量子阱层,以及多个由InGaAsP制成的阻挡层叠体,其具有带隙 比量子阱层宽。 每个阻挡层压板包括具有不同带隙的不同组成的InGaAsP的三个阻挡层。 每个阻挡层压板的厚度使相邻量子阱层中的载流子的波函数彼此不重叠,而提供给有源区的载流子能够被有效地注入到量子阱层中,从而获得低阈值电流, 高斜率效率。
    • 10. 发明授权
    • Electrical connector
    • 电连接器
    • US4983127A
    • 1991-01-08
    • US407626
    • 1989-09-15
    • Mitsuru KawaiMasaru YoshidaYoshihiro Sasaki
    • Mitsuru KawaiMasaru YoshidaYoshihiro Sasaki
    • H01R13/648H01R13/502
    • H01R23/6873H01R12/716Y10S439/903
    • An electrical connector includes an insulating housing (100) consisting of a front section (111) and a rear section (112), the front section having a cylindrical contact support section (120) with a plurality of contact apertures (121) extending along its longitudinal axis and the rear section having a rear cavity (119) in a lower portion thereof; a plurality of L-shaped contact elements (300) each having a contact portion (301), an intermediate portion (302) extending rearwardly from the contact portion, and a terminal portion (303) extending downwardly from the intermediate portion, the contact portion being fitted into the contact aperture; and a block member (200) having a plurality of lateral channels (201) for receiving the intermediate portions and a plurality of vatical apertures (202) for receiving the terminal portions, the block member being fitted into the rear cavity so that the intermediate and terminal portions are fitted into the lateral channels and the vertical apertures respectively.
    • 电连接器包括由前部(111)和后部(112)组成的绝缘壳体(100),前部具有圆柱形的接触支撑部分(120),其具有沿其延伸的多个接触孔(121) 纵向轴线,后部在其下部具有后腔(119); 多个L形接触元件(300),每个具有接触部分(301),从接触部分向后延伸的中间部分(302)和从中间部分向下延伸的端子部分(303),接触部分 安装在接触孔中; 和具有用于容纳中间部分的多个侧向通道(201)和用于容纳端子部分的多个通孔(202)的块件(200),该块件装配到后腔中,使得中间件和 端子部分分别装配到横向通道和垂直孔中。