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1. 发明申请

US20080262201A1 Method and a system for predicting protein functional site, a method for improving protein function, and a function-modified protein 有权
标题翻译：用于预测蛋白质功能位点的方法和系统，改善蛋白质功能的方法和功能修饰的蛋白质
公开(公告)号：US20080262201A1
公开(公告)日：2008-10-23
申请号：US11806448
申请日：2007-05-31
申请人： Hirofumi Doi , Hideaki Hiraki , Akio Kanai
发明人： Hirofumi Doi , Hideaki Hiraki , Akio Kanai
IPC分类号： C07K1/00 , G01N33/50
CPC分类号： C12N15/10 , C12N9/1252 , C12N15/102 , Y02A90/22
摘要： The present application provides a method for predicting the functional site of a protein using data of the entire proteins of an organism of which genome data or cDNA data is known. More specifically, the present application provides a method for predicting a protein functional site, comprising the steps of calculating the frequency of occurrence of an oligopeptide in the entire proteins, calculating the value of each amino-acid residue contributing to the frequency of occurrence as the representative value of the function, and predicting the protein functional site by using the representative value of function as an indicator. The present also provides a system for predicting a functional site for automatically performing said methods. Additionally, the present application provides a method for preparing a function-modified protein comprising subjecting the amino-acid residues composing the functional site identified by the method described above to artificial mutation, and a novel thermophilic DNA polymerase prepared by the method.
摘要翻译：本申请提供了使用其基因组数据或cDNA数据已知的生物体的全部蛋白质的数据来预测蛋白质的功能位点的方法。更具体地，本申请提供了一种用于预测蛋白质功能位点的方法，包括以下步骤：计算整个蛋白质中寡肽的发生频率，计算作为发生频率的每个氨基酸残基的值作为发生频率功能的代表性值，并通过使用功能的代表值作为指标预测蛋白质功能位点。本发明还提供一种用于预测用于自动执行所述方法的功能部位的系统。此外，本申请提供了制备功能修饰蛋白质的方法，包括将构成通过上述方法鉴定的功能位点的氨基酸残基进行人工突变，以及通过该方法制备的新型嗜热DNA聚合酶。

2. 发明授权

US07820423B2 Method and a system for predicting protein functional site, a method for improving protein function, and a function-modified protein 有权
标题翻译：用于预测蛋白质功能位点的方法和系统，改善蛋白质功能的方法和功能修饰的蛋白质
公开(公告)号：US07820423B2
公开(公告)日：2010-10-26
申请号：US11806448
申请日：2007-05-31
申请人： Hirofumi Doi , Hideaki Hiraki , Akio Kanai
发明人： Hirofumi Doi , Hideaki Hiraki , Akio Kanai
IPC分类号： C12N9/12
CPC分类号： C12N15/10 , C12N9/1252 , C12N15/102 , Y02A90/22
摘要： The present application provides a method for predicting the functional site of a protein using data of the entire proteins of an organism of which genome data or cDNA data is known. More specifically, the present application provides a method for predicting a protein functional site, comprising the steps of calculating the frequency of occurrence of an oligopeptide in the entire proteins, calculating the value of each amino-acid residue contributing to the frequency of occurrence as the representative value of the function, and predicting the protein functional site by using the representative value of function as an indicator. The present also provides a system for predicting a functional site for automatically performing said methods. Additionally, the present application provides a method for preparing a function-modified protein comprising subjecting the amino-acid residues composing the functional site identified by the method described above to artificial mutation, and a novel thermophilic DNA polymerase prepared by the method.
摘要翻译：本申请提供了使用其基因组数据或cDNA数据已知的生物体的全部蛋白质的数据来预测蛋白质的功能位点的方法。更具体地，本申请提供了一种用于预测蛋白质功能位点的方法，包括以下步骤：计算整个蛋白质中寡肽的发生频率，计算作为发生频率的每个氨基酸残基的值作为发生频率功能的代表性值，并通过使用功能的代表值作为指标预测蛋白质功能位点。本发明还提供一种用于预测用于自动执行所述方法的功能部位的系统。此外，本申请提供了制备功能修饰蛋白质的方法，包括将构成通过上述方法鉴定的功能位点的氨基酸残基进行人工突变，以及通过该方法制备的新型嗜热DNA聚合酶。

3. 发明授权

US07231301B2 Method and a system for predicting protein functional site, a method for improving protein function, and a function-modified protein 有权
标题翻译：用于预测蛋白质功能位点的方法和系统，改善蛋白质功能的方法和功能修饰的蛋白质
公开(公告)号：US07231301B2
公开(公告)日：2007-06-12
申请号：US10345205
申请日：2003-01-16
申请人： Hirofumi Doi , Hideaki Hiraki , Akio Kanai
发明人： Hirofumi Doi , Hideaki Hiraki , Akio Kanai
IPC分类号： G06F17/11 , G06F17/50 , G01N33/48 , G01N33/50 , G01N33/53
CPC分类号： C12N15/10 , C12N9/1252 , C12N15/102 , Y02A90/22
摘要： The present application provides a method for predicting the functional site of a protein using data of the entire proteins of an organism of which genome data or cDNA data is known. More specifically, the present application provides a method for predicting a protein functional site, comprising the steps of calculating the frequency of occurrence of an oligopeptide in the entire proteins, calculating the value of each amino-acid residue contributing to the frequency of occurrence as the representative value of the function, and predicting the protein functional site by using the representative value of function as an indicator. The present also provides a system for predicting a functional site for automatically performing said methods. Additionally, the present application provides a method for preparing a function-modified protein comprising subjecting the amino-acid residues composing the functional site identified by the method described above to artificial mutation, and a novel thermophilic DNA polymerase prepared by the method.
摘要翻译：本申请提供了使用其基因组数据或cDNA数据已知的生物体的全部蛋白质的数据来预测蛋白质的功能位点的方法。更具体地，本申请提供了一种用于预测蛋白质功能位点的方法，包括以下步骤：计算整个蛋白质中寡肽的发生频率，计算作为发生频率的每个氨基酸残基的值作为发生频率功能的代表性值，并通过使用功能的代表值作为指标预测蛋白质功能位点。本发明还提供一种用于预测用于自动执行所述方法的功能部位的系统。此外，本申请提供了制备功能修饰蛋白质的方法，包括将构成通过上述方法鉴定的功能位点的氨基酸残基进行人工突变，以及通过该方法制备的新型嗜热DNA聚合酶。

4. 发明授权

US5686364A Method for producing substrate to achieve semiconductor integrated circuits 失效
标题翻译：制造半导体集成电路用基板的方法
公开(公告)号：US5686364A
公开(公告)日：1997-11-11
申请号：US530601
申请日：1995-09-19
申请人： Konomu Ohki , Akio Kanai , Shinji Tanaka
发明人： Konomu Ohki , Akio Kanai , Shinji Tanaka
IPC分类号： H01L21/762 , H01L21/02 , H01L21/76 , H01L21/84 , H01L27/12 , H01L21/00
CPC分类号： H01L21/84 , Y10S438/938
摘要： A method for producing for a SOI type bonded substrate for semiconductor integrated circuits which has a void areal ratio which approaches or is equal to zero %, when heat treated at temperatures on the order of 1250.degree. C. The method involves: superimposing a Si single crystal wafer having a main surface of which is covered by a Si polycrystal layer, beneath which Si single crystal islands are formed on the main surface and are isolated from each other by V grooves with interposition of a dielectric film, which V grooves are filled up by the Si polycrystal layer, and a support made from Si material between the Si polycrystal layer and a surface of the support with a dielectrically insulating layer sandwiched therebetween; and conducting heat treatment of the superimposed Si single crystal wafer and the support to effect bonding therebetween. According to the method any P-V value of recesses between the Si single crystal islands and the V grooves which are formed on the bonding surface of the Si polycrystal layer are set at 13 nm/250.times.250 .mu.m.sup.2 or less; and the heat treatment is conducted at a temperature in the range of 1100.degree. C. to 1250.degree. C.
摘要翻译：一种用于半导体集成电路的SOI型键合衬底的制造方法，该半导体集成电路在1250℃的温度下进行热处理时，其空隙面积比接近或等于零％。该方法包括：将Si单其主表面由Si多晶层覆盖的晶体晶片，在主表面上形成Si单晶岛，并通过插入电介质膜的V沟槽彼此隔离，将V沟槽填满通过Si多晶层和由Si材料制成的支撑体在Si多晶层和支撑体的表面之间夹着介电绝缘层; 并且对叠加的Si单晶晶片和支撑体进行热处理以实现它们之间的结合。根据该方法，在Si多晶层的接合表面上形成的Si单晶岛和V槽之间的凹陷的任何P-V值设定为13nm / 250×250μm2m2以下; 并且在1100℃至1250℃的温度下进行热处理。

5. 发明授权

US5240883A Method of fabricating SOI substrate with uniform thin silicon film 失效
标题翻译：用均匀的薄膜制造SOI衬底的方法
公开(公告)号：US5240883A
公开(公告)日：1993-08-31
申请号：US841166
申请日：1992-02-25
申请人： Takao Abe , Masatake Katayama , Akio Kanai , Konomu Ohki , Masatake Nakano
发明人： Takao Abe , Masatake Katayama , Akio Kanai , Konomu Ohki , Masatake Nakano
IPC分类号： H01L21/02 , H01L21/20 , H01L21/304 , H01L21/3063 , H01L21/762 , H01L27/12
CPC分类号： H01L21/2007 , H01L21/3063 , H01L21/76251 , Y10S148/127 , Y10S148/135 , Y10S438/924
摘要： A thin Silicon film On Insulator (SOI) material fabricating method which is capable of providing a very high thickness uniformity of the silicon film, a process simplification and a considerable reduction of processing cost is disclosed, in which a silicon oxide film is formed on one or both of a p-type silicon bond wafer and a silicon base wafer, then the two wafers are bonded together through the silicon oxide film, subsequently a fixed positive charge is induced in the silicon oxide film to form a n-type inversion layer in the p-type silicon bond wafer adjacent to an interface between the p-type silicon bond wafer and the silicon oxide film layer, and thereafter a chemical etching is effected while applying a positive voltage to the p-type silicon bond wafer so that an etch-stop is made at an interface between a depletion layer including the n-type inversion layer and the p-type layer.

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