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1. 发明授权

US08836983B2 Information processing device, image forming apparatus, and non-transitory computer readable medium 有权
标题翻译：信息处理装置，图像形成装置和非暂时性计算机可读介质
公开(公告)号：US08836983B2
公开(公告)日：2014-09-16
申请号：US13558766
申请日：2012-07-26
申请人： Hiroaki Yamamoto , Jyunya Yamada , Tadashi Hata , Toshiharu Hayashida
发明人： Hiroaki Yamamoto , Jyunya Yamada , Tadashi Hata , Toshiharu Hayashida
IPC分类号： G06F3/12
CPC分类号： G06F9/4401
摘要： An information processing device includes an execution unit that executes a control program for causing a functional unit to realize a predetermined function, a memory that stores the control program, a state variable indicating a state of the functional unit, and activation history of either initial activation or second and following activation, in a nonvolatile memory, and a communication unit that causes the execution unit to communicate with the functional unit, wherein the execution unit includes a first procedure where the control program is stored in the memory and the control program is read and is executed, and a second procedure where the control program pre-stored in the memory is read and is executed, refers to the activation history when activation is performed, executes the first procedure in a case of the initial activation, and executes the second procedure in a case of the second and following activation.
摘要翻译：信息处理装置包括：执行单元，执行用于使功能单元实现预定功能的控制程序，存储控制程序的存储器，指示功能单元的状态的状态变量，以及初始激活的激活历史或第二次和之后的激活，以及使执行单元与功能单元通信的通信单元，其中执行单元包括第一过程，其中控制程序存储在存储器中并且读取控制程序并且执行预先存储在存储器中的控制程序被读取并被执行的第二过程，参考执行激活时的激活历史，在初始激活的情况下执行第一过程，并且执行第二过程在第二次和之后激活的情况下的程序。

2. 发明授权

US08638455B2 Program executing apparatus, image processing apparatus and non-transitory computer readable medium for activating an equipment using stored variable 有权
标题翻译：程序执行装置，图像处理装置以及使用存储变量激活设备的非暂时计算机可读介质
公开(公告)号：US08638455B2
公开(公告)日：2014-01-28
申请号：US13295721
申请日：2011-11-14
申请人： Tadashi Hata , Masayoshi Kikuta , Tadamasa Sakamaki , Shunsuke Kasahara , Binhui Liu , Terutake Hayashi , Hiroaki Yamamoto , Masakazu Kawashita , Hideki Yamasaki , Yoshifumi Bando , Yuji Murata , Shinho Ikeda
发明人： Tadashi Hata , Masayoshi Kikuta , Tadamasa Sakamaki , Shunsuke Kasahara , Binhui Liu , Terutake Hayashi , Hiroaki Yamamoto , Masakazu Kawashita , Hideki Yamasaki , Yoshifumi Bando , Yuji Murata , Shinho Ikeda
IPC分类号： G06F3/12
CPC分类号： G06F9/4411 , G06F9/4401
摘要： A program executing apparatus, includes: a nonvolatile memory that stores a program for activating an equipment and a variable used in the program and sustains the stored program and the variable even though power is not supplied, the program and the variable being able to be read out and written into the nonvolatile memory; and an executing unit that transmits the program and the variable to the nonvolatile memory when the activation of the equipment is instructed at an initial status where the program and the variable are not stored in the nonvolatile memory, and successively executes the program using the variable stored in the nonvolatile memory, and, when the activation of the equipment is re-instructed, executes the program using the variable stored in the nonvolatile memory.
摘要翻译：一种程序执行装置，包括：非易失性存储器，其存储用于激活设备的程序和程序中使用的变量，并且即使没有提供电力来维持存储的程序和变量，程序和变量也可以被读取写入非易失性存储器; 以及执行单元，当在所述程序和所述变量未被存储在所述非易失性存储器中的初始状态下指示所述设备的激活时，将所述程序和所述变量发送到所述非易失性存储器，并且使用所存储的所述变量来连续执行所述程序在非易失性存储器中，并且当重新指示设备的激活时，使用存储在非易失性存储器中的变量来执行程序。

3. 发明申请

US20080311019A1 Apparatus for pulling single crystal by CZ method 审中-公开
标题翻译：用CZ法拉单晶的装置
公开(公告)号：US20080311019A1
公开(公告)日：2008-12-18
申请号：US11981476
申请日：2007-10-31
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C01B33/02 , H01L21/322
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
摘要翻译：在配备有冷却器和隔热构件的Czochralski（CZ）单晶拉拔器中，它们将被放置在CZ炉中，使得能够顺利地再充电和额外的材料充电。此外，可以顺利地进行利用Dash的颈部方法消除硅晶种的位错。为此，提供了一种CZ单晶拉拔器，其中冷却器和绝热构件在再充电或附加充电材料期间或在通过使用硅晶粒消除硅晶种的位错期间立即向上移动离开熔融表面破折号的脖子法。

4. 发明授权

US5151529A Platelet activating factor antagonists, named "the phomactins" their preparation and use 失效
标题翻译：标准化活动因子拮抗剂，命名为“药物”他们的制备和使用
公开(公告)号：US5151529A
公开(公告)日：1992-09-29
申请号：US596580
申请日：1990-10-10
申请人： Aiya Sato , Michihiro Sugano , Kouhei Furuya , Takeshi Oshima , Harumitsu Kuwano , Tadashi Hata , Hideyuki Haruyama
发明人： Aiya Sato , Michihiro Sugano , Kouhei Furuya , Takeshi Oshima , Harumitsu Kuwano , Tadashi Hata , Hideyuki Haruyama
IPC分类号： C07D303/32 , C07D493/18 , C12P17/02 , C12P17/18
CPC分类号： C12P17/181 , C07D303/32 , C12P17/02
摘要： A series of new compounds, called "the phomactins" is provided and may be isolated from the culture broth of fungi of the genus Phoma, especially Phoma sp. SANK 11486 (No. FERM BP-2598). These compounds are platelet activating factor antagonists and may be used for the treatment of disorders for which known such agents may also be used.

5. 发明申请

US20070256625A1 Apparatus for pulling single crystal by CZ method 有权
标题翻译：用CZ法拉单晶的装置
公开(公告)号：US20070256625A1
公开(公告)日：2007-11-08
申请号：US11809357
申请日：2007-05-31
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C30B15/20
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends,there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
摘要翻译：在配备有冷却器和隔热构件的Czochralski（CZ）单晶拉拔器中，它们将被放置在CZ炉中，使得能够顺利地再充电和额外的材料充电。此外，可以顺利地进行利用Dash的颈部方法消除硅晶种的位错。为此，提供了一种CZ单晶拉拔器，其中冷却器和绝热构件在再充电或附加充电材料期间或在通过使用硅晶粒消除硅晶种的位错期间立即向上移动离开熔融表面破折号的脖子法。

6. 发明授权

US06733585B2 Apparatus for pulling single crystal by CZ method 有权
标题翻译：用CZ法拉单晶的装置
公开(公告)号：US06733585B2
公开(公告)日：2004-05-11
申请号：US09775287
申请日：2001-02-01
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Tadashi Hata
IPC分类号： C30B1520
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
摘要翻译：在配备有冷却器和隔热构件的Czochralski（CZ）单晶拉拔器中，它们将被放置在CZ炉中，使得能够顺利地再充电和额外的材料充电。此外，可以顺利地进行利用Dash的颈部方法消除硅晶种的位错。为此，提供了一种CZ单晶拉拔器，其中冷却器和绝热构件在再充电或附加充电材料期间或在通过使用硅晶粒消除硅晶种的位错期间立即向上移动离开熔融表面破折号的脖子法。

7. 发明授权

US07727334B2 Apparatus for pulling single crystal by CZ method 有权
标题翻译：用CZ法拉单晶的装置
公开(公告)号：US07727334B2
公开(公告)日：2010-06-01
申请号：US11809357
申请日：2007-05-31
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C30B15/20
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
摘要翻译：在配备有冷却器和隔热构件的Czochralski（CZ）单晶拉拔器中，它们将被放置在CZ炉中，使得能够顺利地再充电和额外的材料充电。此外，可以顺利地进行利用Dash的颈部方法消除硅晶种的位错。为此，提供了一种CZ单晶拉拔器，其中冷却器和绝热构件在再充电或附加充电材料期间或在通过使用硅晶粒消除硅晶种的位错期间立即向上移动离开熔融表面破折号的脖子法。

8. 发明申请

US20090173272A1 Apparatus for pulling single crystal by CZ method 有权
公开(公告)号：US20090173272A1
公开(公告)日：2009-07-09
申请号：US12317695
申请日：2008-12-23
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C30B15/00 , F28D15/00
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

9. 发明授权

US07222342B2 Execution on a machine, the start of an auxiliary downloader when storage of new software memory fails during execution of a first downloader 失效
标题翻译：在执行第一个下载程序时，在新的软件内存存储失败时，在机器上执行辅助下载程序的启动
公开(公告)号：US07222342B2
公开(公告)日：2007-05-22
申请号：US10370591
申请日：2003-02-24
申请人： Tadashi Hata , Satoshi Ono
发明人： Tadashi Hata , Satoshi Ono
IPC分类号： G06F9/44
CPC分类号： G06F11/1433 , G06F8/654
摘要： A download method comprises an auxiliary downloader storing step for storing an auxiliary downloader 38 in a storage unit by executing a downloader 22 stored in the storage unit, a new software storing step for storing new software 40 in a region of the storage unit other than the storage region where the auxiliary downloader 38 is stored, and a downloader starting step for executing the auxiliary downloader 38 in the event of failure of the storage of the new software 40.
摘要翻译：下载方法包括：辅助下载器存储步骤，用于通过执行存储在存储单元中的下载器22将辅助下载器38存储在存储单元中;新的软件存储步骤，用于将新软件40存储在存储单元以外的存储单元的区域中存储辅助下载器38的存储区域;以及下载器开始步骤，用于在存储新软件40的情况下执行辅助下载器38。

10. 发明申请

US20080311021A1 Apparatus for pulling single crystal by CZ method 审中-公开
公开(公告)号：US20080311021A1
公开(公告)日：2008-12-18
申请号：US11981477
申请日：2007-10-31
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C30B15/20 , C01B33/02
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

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