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1. 发明授权

US6067062A Light valve device 失效
标题翻译：光阀装置
公开(公告)号：US6067062A
公开(公告)日：2000-05-23
申请号：US749292
申请日：1991-08-23
申请人： Hiroaki Takasu , Yoshikazu Kojima , Masaaki Kamiya , Tsuneo Yamazaki , Hiroshi Suzuki , Masaaki Taguchi , Ryuichi Takano , Satoru Yabe
发明人： Hiroaki Takasu , Yoshikazu Kojima , Masaaki Kamiya , Tsuneo Yamazaki , Hiroshi Suzuki , Masaaki Taguchi , Ryuichi Takano , Satoru Yabe
IPC分类号： G02F1/1337 , G02F1/136 , G02F1/1362 , G09G3/20 , G09G3/36 , G09G5/00 , H01L27/12
CPC分类号： G02F1/13454 , G02F1/13378 , G09G3/3648 , H01L27/1214 , H01L27/1251 , G02F1/136213 , G02F2202/105 , G09G2330/02 , G09G5/006
摘要： A light valve has a composite substrate comprised of an electrically insulating substrate and a semiconductor single crystal thin film formed over the electrically insulating substrate. A pixel array comprising semiconductor switch elements is formed in the semiconductor single crystal thin film. A peripheral circuit having circuit elements is formed in the semiconductor single crystal thin film so that a small-sized, high speed light valve is obtained. X- driver and Y-driver circuits are formed in the semiconductor single crystal thin film and controlled by a control circuit, such as a video signal processing circuit, which receives and processes video signals inputted directly from an external source. The peripheral circuit can be a DRAM sense amplifier for sensing charges stored in each pixel of the pixel array to detect defects in the pixel array. The peripheral circuit can be a photosensor circuit for detecting an intensity of incident light to monitor the performance of a light source of the light valve. The peripheral circuit can be a temperature sensor for detecting the temperature of a liquid crystal layer of the light valve, and may be comprised of Darlington connected NPN transistors formed in the semiconductor single crystal thin film. The peripheral circuit can also be a solar cell for converting incident light into electrical energy to supply power to at least one of the pixel array, X-driver and Y-driver circuits and the peripheral circuit.
摘要翻译：光阀具有由电绝缘基板和形成在电绝缘基板上的半导体单晶薄膜构成的复合基板。包含半导体开关元件的像素阵列形成在半导体单晶薄膜中。在半导体单晶薄膜中形成具有电路元件的外围电路，从而获得小型高速光阀。 X驱动器和Y驱动器电路形成在半导体单晶薄膜中，并由诸如视频信号处理电路的控制电路控制，该电路接收并处理从外部源直接输入的视频信号。外围电路可以是用于感测存储在像素阵列的每个像素中的电荷的DRAM读出放大器，以检测像素阵列中的缺陷。外围电路可以是用于检测入射光的强度以监视光阀的光源的性能的光电传感器电路。外围电路可以是用于检测光阀的液晶层的温度的温度传感器，并且可以由形成在半导体单晶薄膜中的达林顿连接的NPN晶体管组成。外围电路也可以是用于将入射光转换为电能以向像素阵列，X驱动器和Y驱动器电路和外围电路中的至少一个供电的太阳能电池。

2. 发明授权

US5637187A Light valve device making 失效
标题翻译：光阀装置制造
公开(公告)号：US5637187A
公开(公告)日：1997-06-10
申请号：US464075
申请日：1995-06-05
申请人： Hiroaki Takasu , Yoshikazu Kojima , Masaaki Kamiya , Tsuneo Yamazaki , Hiroshi Suzuki , Masaaki Taguchi , Ryuichi Takano , Satoru Yabe
发明人： Hiroaki Takasu , Yoshikazu Kojima , Masaaki Kamiya , Tsuneo Yamazaki , Hiroshi Suzuki , Masaaki Taguchi , Ryuichi Takano , Satoru Yabe
IPC分类号： G02F1/1337 , G02F1/136 , G02F1/1362 , G09G3/20 , G09G3/36 , G09G5/00 , H01L27/12 , H01L21/00
CPC分类号： G02F1/13454 , G02F1/13378 , G09G3/3648 , H01L27/1214 , H01L27/1251 , G02F1/136213 , G02F2202/105 , G09G2330/02 , G09G5/006
摘要： A process for forming a light valve device comprises forming a semiconductor single crystal film to form a composite substrate by polishing a semiconductor single crystal substrate after an electric insulating substrate has been bonded thereto; forming a group of pixel electrodes for defining a pixel region and a group of switch elements for selectively energizing the pixel electrodes by integrating a pixel array portion over the composite substrate; forming a liquid crystal aligning means for the pixel region; superposing an opposed substrate over the composite substrate with a gap therebetween; and filling the gap with liquid crystal material.
摘要翻译：形成光阀装置的方法包括：形成半导体单晶膜，以在电绝缘基板已经结合之后通过抛光半导体单晶基板来形成复合基板; 形成用于限定像素区域的一组像素电极和一组开关元件，用于通过在复合衬底上积分像素阵列部分来选择性地激励像素电极; 形成用于像素区域的液晶对准装置; 在复合基板上叠置相对的基板，其间具有间隙; 并用液晶材料填充间隙。

3. 发明授权

US06191476B1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06191476B1
公开(公告)日：2001-02-20
申请号：US08859571
申请日：1997-05-20
申请人： Kunihiro Takahashi , Mizuaki Suzuki , Tsuneo Yamazaki , Hiroaki Takasu , Kunio Nakajima , Atsushi Sakurai , Tadao Iwaki , Yoshikazu Kojima , Masaaki Kamiya
发明人： Kunihiro Takahashi , Mizuaki Suzuki , Tsuneo Yamazaki , Hiroaki Takasu , Kunio Nakajima , Atsushi Sakurai , Tadao Iwaki , Yoshikazu Kojima , Masaaki Kamiya
IPC分类号： H01L2310
CPC分类号： G02F1/13454 , G02F1/133512 , G02F2001/136281 , H01L23/36 , H01L23/367 , H01L27/12 , H01L27/1203 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： To provide a semiconductor substrate and a light-valve semiconductor substrate capable of preventing the threshold value of a MOS transistor on a single-crystal silicon device forming layer from increasing and forming a MOS integrated circuit with a high reliability even for a long-time operation. A semiconductor substrate and a light-valve semiconductor substrate comprising a single-crystal silicon thin-film device forming layer 5001 formed above an insulating substrate 5004 through an adhesive layer 5003 and an insulating layer 5002 formed on the single-crystal silicon thin-film device forming layer, wherein a heat conductive layers 5201 and 5202 made of a material with a high heat conductivity are arranged between the single-crystal silicon thin-film device forming layer and the adhesive layer and on the insulating layer.
摘要翻译：为了提供能够防止单晶硅器件形成层上的MOS晶体管的阈值的半导体衬底和光阀半导体衬底，即使对于长时间操作而增加并形成具有高可靠性的MOS集成电路。一种半导体衬底和一个光阀半导体衬底，它包括通过粘合剂层5003形成在绝缘衬底5004上的单晶硅薄膜器件形成层5001和形成在单晶硅薄膜器件上的绝缘层5002 形成层，其中在单晶硅薄膜器件形成层和粘合剂层之间以及绝缘层上布置由具有高导热性的材料制成的导热层5201和5202。

4. 再颁专利

USRE36836E Semiconductor device for driving a light valve 失效
标题翻译：用于驱动光阀的半导体装置
公开(公告)号：USRE36836E
公开(公告)日：2000-08-29
申请号：US510422
申请日：1995-08-02
申请人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
发明人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
IPC分类号： G02F1/136 , G02F1/1335 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L21/86 , H01L27/12 , H01L29/78 , H01L29/786 , H01L29/04 , H01L27/01
CPC分类号： G02F1/13454 , G02F1/136209 , G02F1/1368 , H01L21/84 , H01L21/86 , H01L27/1203 , H01L27/1214 , H01L29/66772 , H01L29/78633 , H01L29/78645 , H01L29/78648 , H01L29/78654 , G02F1/133512 , G02F2001/13613 , G02F2202/105 , Y10S148/012 , Y10S148/15 , Y10S438/977
摘要： The invention provides a semi-conductor light valve device and a process for fabricating the same. The device comprises a composite substrate having a supporte substrate, a light-shielding thin film formed on said supporte substrate and semiconductive thin film disposed on the light-shielding thin film with interposing an insulating thin film. A switching element made of a transistor and a transparent electrode for driving light valve are formed on the semiconductive thin film, and the switching element and the transparent electrode are connected electrically with each other. The transistor includes a channel region in the semiconductive thin film and a main gate electrode for controlling the conduction in the channel region, and the light-shielding thin film layer is so formed as to cover the channel region on the side opposite to said channel region, so as to prevent effectively a back channel and shut off the incident light.
摘要翻译：本发明提供一种半导体光阀装置及其制造方法。该装置包括具有支撑衬底的复合衬底，在所述支撑衬底上形成的遮光薄膜和设置在遮光薄膜上并具有绝缘薄膜的半导体薄膜。在半导体薄膜上形成由晶体管构成的开关元件和用于驱动光阀的透明电极，并且开关元件和透明电极彼此电连接。晶体管包括半导体薄膜中的沟道区域和用于控制沟道区域中的导通的主栅电极，并且遮光薄膜层形成为覆盖与所述沟道区域相对的一侧上的沟道区域，以便有效地防止背部通道并且切断入射光。

5. 发明授权

US5982461A Light valve device 失效
标题翻译：光阀装置
公开(公告)号：US5982461A
公开(公告)日：1999-11-09
申请号：US834288
申请日：1992-02-14
申请人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
发明人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/20 , G09G3/36 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： G02F1/13454 , G02F1/1362 , G02F2202/105
摘要： A light valve device has a drive substrate integrated with a drive electrode. A transistor is connected to the drive electrode and a driving circuit energizes the drive electrode through the transistor. An opposed substrate is provided opposed to the drive electrode, and an electrooptical material layer is disposed between the drive substrate and the opposed substrate. The drive substrate has a structure comprising a substrate layer and a semiconductor single crystal thin film layer. The semiconductor single crystal thin film layer is made by thinning a semiconductor single crystal wafer which has been bonded to the substrate layer. The light valve device has a small size and high pixel density and can be formed using miniaturization technology. The light valve can be used for a small size, high resolution video projector and a color matrix display device.
摘要翻译： PCT No.PCT / JP91 / 00580 Sec。 371日期：1992年2月14日 102（e）日期1992年2月14日PCT 1991年4月26日PCT PCT。 WO91 / 17471 PCT出版物日期1991年11月14日光阀装置具有与驱动电极集成的驱动基板。晶体管连接到驱动电极，驱动电路通过晶体管对驱动电极通电。相对的基板与驱动电极相对设置，电光材料层设置在驱动基板和相对的基板之间。驱动基板具有包括基板层和半导体单晶薄膜层的结构。半导体单晶薄膜层通过使已结合到基底层的半导体单晶晶片变薄来制造。光阀装置具有小尺寸和高像素密度，并且可以使用小型化技术形成。光阀可用于小尺寸，高分辨率的视频投影机和彩色矩阵显示设备。

6. 发明授权

US5672518A Method of fabricating semiconductor device having stacked layered substrate 失效
标题翻译：制造具有堆叠层叠基板的半导体器件的方法
公开(公告)号：US5672518A
公开(公告)日：1997-09-30
申请号：US60163
申请日：1993-05-07
申请人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
发明人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
IPC分类号： G02F1/136 , G02F1/1335 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L21/86 , H01L27/12 , H01L29/78 , H01L29/786 , H01L21/265 , H01L31/18
CPC分类号： G02F1/13454 , G02F1/136209 , G02F1/1368 , H01L21/84 , H01L21/86 , H01L27/1203 , H01L27/1214 , H01L29/66772 , H01L29/78633 , H01L29/78645 , H01L29/78648 , H01L29/78654 , G02F1/133512 , G02F2001/13613 , G02F2202/105 , Y10S148/012 , Y10S148/15 , Y10S438/977
摘要： The invention provides a semi-conductor light valve device and a process for fabricating the same. The device comprises a composite substrate having a supporte substrate, a light-shielding thin film formed on said supporte substrate and semiconductive thin film disposed on the light-shielding thin film with interposing an insulating thin film. A switching element made of a transistor and a transparent electrode for driving light valve are formed on the semiconductive thin film, and the switching element and the transparent electrode are connected electrically with each other. The transistor includes a channel region in the semiconductive thin film and a main gate electrode for controlling the conduction in the channel region, and the light-shielding thin film layer is so formed as to cover the channel region on the side opposite to said channel region, so as to prevent effectively a back channel and shut off the incident light.
摘要翻译：本发明提供一种半导体光阀装置及其制造方法。该装置包括具有支撑衬底的复合衬底，在所述支撑衬底上形成的遮光薄膜和设置在遮光薄膜上并具有绝缘薄膜的半导体薄膜。在半导体薄膜上形成由晶体管构成的开关元件和用于驱动光阀的透明电极，并且开关元件和透明电极彼此电连接。晶体管包括半导体薄膜中的沟道区域和用于控制沟道区域中的导通的主栅电极，并且遮光薄膜层形成为覆盖与所述沟道区域相对的一侧上的沟道区域，以便有效地防止背部通道并且切断入射光。

7. 发明授权

US5585304A Method of making semiconductor device with multiple transparent layers 失效
标题翻译：制造具有多个透明层的半导体器件的方法
公开(公告)号：US5585304A
公开(公告)日：1996-12-17
申请号：US293415
申请日：1994-08-02
申请人： Yutaka Hayashi , Kunihiro Takahashi , Hiroaki Takasu , Yoshikazu Kojima , Hitoshi Niwa , Nobuyoshi Matsuyama , Yomoyuki Yoshino , Masaaki Kamiya
发明人： Yutaka Hayashi , Kunihiro Takahashi , Hiroaki Takasu , Yoshikazu Kojima , Hitoshi Niwa , Nobuyoshi Matsuyama , Yomoyuki Yoshino , Masaaki Kamiya
IPC分类号： H01L27/12 , H01L21/02 , H01L21/30 , H01L21/762 , H01L21/302
CPC分类号： H01L21/76251 , Y10S148/012 , Y10S148/135 , Y10S148/148 , Y10S438/977
摘要： A semiconductor wafer is comprised of a transparent layer interposed between a thin silicon layer and a thick silicon layer. Silicon islands are formed from the thin silicon layer on the transparent layer. Device elements are formed in the silicon islands. Thereafter, the thick silicon layer which is a support layer is etched away to form a transparent region on the wafer. The wafer is constructed to avoid elimination or destruction of the transparent layer during the course of formation of the silicon islands and during the course of etching of the rear thick silicon plate. The transparent layer is comprised of a silicon nitride film or a silicon carbide film. Alternatively, the transparent layer is comprised of a silicon oxide film covered by a silicon nitride film or a silicon carbide film on one or both of the upper and lower faces of the silicon oxide film.
摘要翻译：半导体晶片由介于薄硅层和厚硅层之间的透明层构成。硅岛由透明层上的薄硅层形成。器件元件形成在硅岛中。此后，作为支撑层的厚硅层被蚀刻掉以在晶片上形成透明区域。构造晶片以避免在形成硅岛的过程中和在后厚硅板的蚀刻过程中消除或破坏透明层。透明层由氮化硅膜或碳化硅膜构成。或者，透明层由在氧化硅膜的上表面和下表面的一个或两个上由氮化硅膜或碳化硅膜覆盖的氧化硅膜构成。

8. 发明授权

US5463238A CMOS structure with parasitic channel prevention 失效
标题翻译：具有寄生通道预防的CMOS结构
公开(公告)号：US5463238A
公开(公告)日：1995-10-31
申请号：US22369
申请日：1993-02-25
申请人： Kunihiro Takahashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
发明人： Kunihiro Takahashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
IPC分类号： H01L27/06 , H01L27/092 , H01L27/12 , H01L29/786 , H01L27/02 , H01L21/225 , H01L29/06
CPC分类号： H01L29/78609 , H01L27/0688 , H01L27/0921 , H01L27/0928 , H01L27/1203 , H01L29/78654
摘要： A semiconductor device comprises a complementary MOS transistor integrated circuit formed in a semiconductor single crystal silicon disposed on an electrically insulating layer. A thickness of the single crystal silicon in a region in which an N-type MOS transistor is formed is made thicker than the thickness in a region in which a P-type MOS transistor is formed. By this structure, the bottoms of the source region and the drain region of the N-type transistor are separated from the electrically insulating layer by a predetermined distance. The separation of the source region and the drain region from the electrically insulating layer is effective to prevent a parasitic channel from forming, thereby reducing leakage current and making the semiconductor device more efficient.
摘要翻译：半导体器件包括形成在设置在电绝缘层上的半导体单晶硅中的互补MOS晶体管集成电路。形成N型MOS晶体管的区域中的单晶硅的厚度比形成有P型MOS晶体管的区域的厚度厚。通过这种结构，N型晶体管的源极区域和漏极区域的底部与电绝缘层分离预定距离。源极区域和漏极区域与电绝缘层的分离对于防止形成寄生沟道是有效的，从而减少漏电流并使半导体器件更有效率。

9. 发明授权

US5486708A Light valve device using semiconductive composite substrate 失效
标题翻译：光阀装置采用半导体复合基板
公开(公告)号：US5486708A
公开(公告)日：1996-01-23
申请号：US264635
申请日：1994-06-23
申请人： Kunihiro Takahashi , Yoshikazu Kojima , Hiroaki Takasu , Nobuyoshi Matsuyama , Hitoshi Niwa , Tomoyuki Yoshino , Tsuneo Yamazaki
发明人： Kunihiro Takahashi , Yoshikazu Kojima , Hiroaki Takasu , Nobuyoshi Matsuyama , Hitoshi Niwa , Tomoyuki Yoshino , Tsuneo Yamazaki
IPC分类号： H01L29/78 , G02F1/1335 , G02F1/1362 , H01L21/336 , H01L21/762 , H01L21/77 , H01L21/84 , H01L29/786 , H01L33/00
CPC分类号： G02F1/13454 , H01L21/76264 , H01L27/1214 , H01L27/1266 , H01L29/66772 , H01L29/78648 , G02F1/133512 , G02F2001/13613 , G02F2202/105 , H01L21/76289 , H01L2221/68363 , Y10S148/012 , Y10S148/135
摘要： A semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film is formed integrally with transistor elements and is laminated on an insulating thin film. The single crystal semiconductor thin film is formed with through-holes and the insulating thin film is formed on its back side with electrodes and a shielding film. A light valve device using the semiconductor device is also disclosed. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate. The multi-layer substrate is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film. A transparent opposite substrate is also formed so that the optical transparency of the electrooptical substance is controlled by the switching elements.
摘要翻译：具有双面布线结构的半导体器件，其中单晶半导体薄膜与晶体管元件整体形成并层压在绝缘薄膜上。单晶半导体薄膜形成有通孔，并且绝缘薄膜在其背面形成有电极和屏蔽膜。还公开了使用该半导体器件的光阀装置。在单晶半导体薄膜上形成晶体管的开关元件，与开关元件电连接的像素电极以及用于扫描和驱动开关元件的驱动电路。还公开了一种微型高密度光阀装置。在该光阀装置中，在多层基板之间配置有电光物质。多层基板在绝缘膜的相对侧的电极和屏蔽膜上形成有通过绝缘膜形成有分组元件的一侧。还形成透明的相对基板，使得电光物质的光学透明度由开关元件控制。

10. 发明授权

US5434433A Semiconductor device for a light wave 失效
标题翻译：用于光波的半导体器件
公开(公告)号：US5434433A
公开(公告)日：1995-07-18
申请号：US106418
申请日：1993-08-13
申请人： Hiroaki Takasu , Yoshikazu Kojima , Kunihiro Takahashi , Tsuneo Yamazaki , Tadao Iwaki
发明人： Hiroaki Takasu , Yoshikazu Kojima , Kunihiro Takahashi , Tsuneo Yamazaki , Tadao Iwaki
IPC分类号： G02F1/1335 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09G3/36 , H01L21/77 , H01L27/12 , H01L29/786 , H01L33/00
CPC分类号： G02F1/13454 , H01L27/1203 , H01L27/1214 , G02F2001/136281 , G02F2202/105
摘要： A semiconductor substrate is utilized to integrally form a drive circuit and a pixel array to produce a transparent semiconductor device for a light valve. The semiconductor device for a light valve is constructed by a semiconductor substrate composed of a bulk single crystal silicon having an opaque thick portion and a thin transparent portion. A pixel array is formed in the transparent portion. A drive circuit is formed in a top face of the opaque portion. A transparent support substrate is laminated to the top face of the semiconductor substrate for reinforcement. A bulk portion of the semiconductor substrate is removed from a back face thereof by selective etching to provide the transparent portion.
摘要翻译：利用半导体衬底整体地形成驱动电路和像素阵列以产生用于光阀的透明半导体器件。用于光阀的半导体器件由具有不透明厚部分和薄透明部分的大块单晶硅构成的半导体衬底构成。在透明部分中形成像素阵列。驱动电路形成在不透明部分的顶面。将透明支撑基板层叠到半导体基板的顶面以进行加强。通过选择性蚀刻从其背面去除半导体衬底的主体部分以提供透明部分。

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