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    • 10. 发明申请
    • SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 半导体存储器件及其制造方法
    • US20090065838A1
    • 2009-03-12
    • US12171322
    • 2008-07-11
    • Takeshi Nagao
    • Takeshi Nagao
    • H01L27/12H01L21/84
    • H01L27/12H01L21/84H01L27/115H01L27/11521H01L27/11558H01L29/66825
    • An improved semiconductor memory device having a silicon on insulator (SOI) structure. Exemplary devices provide improved charge injection into the device's floating gate electrode. Exemplary devices may include a semiconductor substrate including a transistor forming region and a capacitor forming region; a MOSFET; a MOS capacitor; a projection formed within a periphery of the capacitor electrode of the MOS capacitor; and a floating gate electrode extending from the channel region of the MOSFET to overlap the projection of the capacitor electrode, with a gate insulating film interposed therebetween. The projection may include an inclined surface which may have a concave shape and/or the projection may extend above a capacitor groove having a undercut portion beneath the projection.
    • 一种具有绝缘体上硅(SOI)结构的改进的半导体存储器件。 示例性器件提供改进的电荷注入到器件的浮栅中。 示例性器件可以包括包括晶体管形成区域和电容器形成区域的半导体衬底; 一个MOSFET; MOS电容器 形成在MOS电容器的电容电极的周围的突起; 以及从MOSFET的沟道区域延伸以与电容器电极的突起重叠的浮栅,其间插入有栅极绝缘膜。 突起可以包括可以具有凹形形状的倾斜表面和/或突起可以在突起下方具有底切部分的电容器凹槽的上方延伸。