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    • 2. 发明授权
    • Signal transmission circuit and semiconductor memory using the same
    • 信号传输电路和半导体存储器使用相同
    • US06438050B1
    • 2002-08-20
    • US10038914
    • 2002-01-08
    • Kazuo KanetaniHiroaki NambuKaname YamasakiTakeshi KusunokiFumihiko Arakawa
    • Kazuo KanetaniHiroaki NambuKaname YamasakiTakeshi KusunokiFumihiko Arakawa
    • G11C700
    • H03K3/356139
    • A transmission circuit for transmitting a data signal between circuit units through a signal wire. The data signal is transmitted for precharging the signal wire to high potential during a precharge period and discharging it to low potential according to data transmitted during an evaluation period or keeping the signal wire as it is. Latch type Source-Coupled-Logic is configured so that a first node and a second node used as an output terminal to the next stage are respectively charged together to high potential during the precharge period. The second node is discharged according to a potential at the first node during the evaluation period, and the first node is discharged according to a potential on the signal wire. Thus, the operation of discharging the signal wire by the driver circuit can be sped up.
    • 一种用于通过信号线在电路单元之间传输数据信号的传输电路。 发送数据信号,用于在预充电期间将信号线预充电到高电位,并根据在评估期间传输的数据将其放电到低电位,或保持信号线原样。 锁存型源耦合逻辑被配置为使得用作下一级的输出端的第一节点和第二节点在预充电周期期间分别充电到高电位。 第二节点在评估期间根据第一节点的电位放电,第一节点根据信号线上的电位放电。 因此,可以加快由驱动电路对信号线进行放电的动作。
    • 5. 发明授权
    • Signal transmission circuit and semiconductor memory using the same
    • 信号传输电路和半导体存储器使用相同
    • US06337581B1
    • 2002-01-08
    • US09599738
    • 2000-06-23
    • Kazuo KanetaniHiroaki NambuKaname YamasakiTakeshi KusunokiFumihiko Arakawa
    • Kazuo KanetaniHiroaki NambuKaname YamasakiTakeshi KusunokiFumihiko Arakawa
    • H03K190185
    • H03K3/356139
    • Disclosed herein is a transmission circuit for transmitting a data signal between circuit units on a semiconductor integrated circuit through a signal wire. The data signal is transmitted by a driver circuit for precharging the signal wire to a high potential during a precharge period and discharging the signal wire to a low potential according to data to be transmitted during an evaluation period or keeping the signal wire at a high potential as floating as it is. Latch type Source-Coupled-Logic configured so that a first node and a second node used as an output terminal to the next stage are respectively charged together to a high potential during the precharge period, the second node is discharged according to a potential at the first node during the evaluation period, and the first node is discharged according to a potential on the signal wire, is used as a receiving circuit, whereby a distinction as to a high or low level of the potential on the signal wire is made with early timing provided to perform the operation of discharging the signal wire by the driver circuit.
    • 这里公开了一种用于通过信号线在半导体集成电路上的电路单元之间传输数据信号的发送电路。 数据信号由驱动电路传输,用于在预充电期间将信号线预充电到高电位,并根据在评估期间要发送的数据将信号线放电到低电位,或者将信号线保持在高电位 像浮动一样。 锁存型源耦合逻辑被配置为使得用作到下一级的输出端的第一节点和第二节点在预充电周期期间分别充电到高电位,第二节点根据在 在评估期间的第一节点和第一节点根据信号线上的电位放电,被用作接收电路,从而对信号线上的电位的高电平或低电平进行区分以提前 提供用于执行由驱动器电路放电信号线的操作的定时。
    • 7. 发明授权
    • Signal transmission circuit and semiconductor memory using the same
    • 信号传输电路和半导体存储器使用相同
    • US06356493B1
    • 2002-03-12
    • US09636737
    • 2000-08-11
    • Kazuo KanetaniHiroaki NambuKaname YamasakiTakeshi KusunokiFumihiko Arakawa
    • Kazuo KanetaniHiroaki NambuKaname YamasakiTakeshi KusunokiFumihiko Arakawa
    • G11C700
    • H03K3/356139
    • A transmission circuit for transmitting a data signal between circuit units through a signal wire. The data signal is transmitted for precharging the signal wire to high potential during a precharge period and discharging it to low potential according to data transmitted during an evaluation period or keeping the signal wire as it is. Latch type Source-Coupled-Logic as configured so that a first node and a second node used as an output terminal to the next stage are respectively charged together to high potential during the precharge period. The second node is discharged according to potential at the first node during the evaluation period, and the first node is discharged according to a potential on the signal wire. Thus, the operation of discharging the signal wire by the driver circuit can be sped up.
    • 一种用于通过信号线在电路单元之间传输数据信号的传输电路。 发送数据信号,用于在预充电期间将信号线预充电到高电位,并根据在评估期间传输的数据将其放电到低电位,或保持信号线原样。 锁存型源耦合逻辑被配置为使得用作下一级的输出端的第一节点和第二节点在预充电周期期间分别充电到高电位。 第二节点在评估期间根据第一节点的电位放电,第一节点根据信号线上的电位放电。 因此,可以加快由驱动电路对信号线进行放电的动作。
    • 8. 发明授权
    • Semiconductor memory
    • 半导体存储器
    • US06333881B1
    • 2001-12-25
    • US09604735
    • 2000-06-28
    • Takeshi KusunokiFumihiko ArakawaHiroaki NambuKazuo KanetaniKaname Yamasaki
    • Takeshi KusunokiFumihiko ArakawaHiroaki NambuKazuo KanetaniKaname Yamasaki
    • G11C700
    • G11C11/419G11C7/12
    • One of the factors determining cycle time of an SRAM is recovery time of a bit line after writing. When the size of a precharge PMOS transistor is increased to shorten the recovery time, delay time which is caused by making the precharge PMOS transistors non-conductive at the time of read operation, that is, access time increases. To avoid this, a semiconductor memory is provided with a second precharge circuit in addition to the conventional bit line precharge circuit. The second precharge circuit operates upon detection of completion of writing and stops operation when it detects that the bit line is precharged to a high potential. Consequently, the recovery time after write operation is shortened and the cycle time is reduced without increasing the access time.
    • 确定SRAM周期时间的因素之一是写入后的位线的恢复时间。 当增加预充电PMOS晶体管的尺寸以缩短恢复时间时,由于在读取操作时使预充电PMOS晶体管不导通而导致的延迟时间,即访问时间增加。 为了避免这种情况,除了常规位线预充电电路之外,半导体存储器还设置有第二预充电电路。 第二预充电电路在检测到写入完成时工作,并且当其检测到位线被预充电到高电位时停止操作。 因此,在不增加访问时间的情况下,缩短写入操作之后的恢复时间并缩短周期时间。
    • 9. 发明授权
    • High-speed static random access memory
    • 高速静态随机存取存储器
    • US6075729A
    • 2000-06-13
    • US145161
    • 1998-09-01
    • Kenichi OhhataFumihiko ArakawaTakeshi KusunokiHiroaki NambuKazuo KanetaniKaname YamasakiKeiichi Higeta
    • Kenichi OhhataFumihiko ArakawaTakeshi KusunokiHiroaki NambuKazuo KanetaniKaname YamasakiKeiichi Higeta
    • G11C7/12G11C11/412G11C7/00
    • G11C11/412G11C7/12G11C2207/12
    • A semiconductor memory has a plurality of word lines a plurality of bit line pairs and a plurality of memory cells formed at intersection points between the word lines and the bit line pairs. A word decoder generates a word line select signal upon receipt of an address signal and a bit decoder generates a bit line select signal on receiving the address signal. A bit line load circuit receives a signal current from the applicable memory cell, a sense circuit detects an output signal from the bit line load circuit, and a bit line pull-down circuit and a bit line recovery circuit drives the applicable bit lines upon writing data to the memory cell in question. The bit line load circuit and the bit line recovery circuit include pMOS transistors whose drains are connected to the bit lines and whose gates are fed with a control signal, and diodes whose anodes are connected to a first power supply and whose cathodes are connected to sources of the pMOS transistors, the pMOS transistors and the diodes being furnished to each of the bit line pairs. The pMOS transistors are inhibited from conducting while the bit lines are being driven Low by the bit line pull-down circuit during a write cycle, and allowed to conduct during other periods including a read cycle. This constitution shortens the recovery time, implementing a high-speed SRAM with a shortened cycle time.
    • 半导体存储器具有多个字线,多个位线对和形成在字线和位线对之间的交点处的多个存储单元。 字解码器在接收到地址信号时产生字线选择信号,并且位解码器在接收到地址信号时产生位线选择信号。 位线负载电路从可应用的存储单元接收信号电流,感测电路检测来自位线负载电路的输出信号,位线下拉电路和位线恢复电路在写入时驱动可应用的位线 数据到所讨论的存储单元。 位线负载电路和位线恢复电路包括其漏极连接到位线并且其栅极被馈送控制信号的pMOS晶体管,以及其阳极连接到第一电源并且其阴极连接到源极的二极管 的pMOS晶体管,pMOS晶体管和二极管被提供给每个位线对。 在写周期期间位线被位线下拉电路驱动为低电平时,禁止pMOS晶体管导通,并允许其在包括读周期的其他周期期间导通。 这种结构缩短了恢复时间,实现了一个缩短周期时间的高速SRAM。