专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6008874A Active matrix liquid crystal display having alignment film with inclined surface 有权
标题翻译：有源矩阵液晶显示器具有倾斜表面的取向膜
公开(公告)号：US6008874A
公开(公告)日：1999-12-28
申请号：US138543
申请日：1998-08-24
申请人： Hiroaki Kouno , Susumu Oima , Yasuo Segawa , Norio Tabuchi , Shouzou Ohura , Hiroki Hamada , Kiyoshi Yoneda
发明人： Hiroaki Kouno , Susumu Oima , Yasuo Segawa , Norio Tabuchi , Shouzou Ohura , Hiroki Hamada , Kiyoshi Yoneda
IPC分类号： G02F1/1337 , G02F1/136
CPC分类号： G02F1/1337 , G02F2001/13373
摘要： An active matrix liquid crystal display improves its contrast by suppressing irregularity of an alignment film caused by video lines thereby reducing reverse regions on a display electrode. The active matrix liquid crystal display has first and second opposite substrates, a video line, an active element and a display electrode which are directly or indirectly formed on the first substrate, and an alignment film which is formed on or above the video line, the active element and the display electrode. The alignment film is so formed that is surface is at an angle of inclination of not more than 10.5.degree. with respect to the display electrode surface between the video line and the display electrode.
摘要翻译：有源矩阵液晶显示器通过抑制由视频线引起的取向膜的不规则性而改善其对比度，从而减少显示电极上的反向区域。有源矩阵液晶显示器具有直接或间接地形成在第一基板上的第一和第二相对基板，视频线，有源元件和显示电极以及形成在视频线上或上方的取向膜，有源元件和显示电极。取向膜形成为相对于视频线和显示电极之间的显示电极表面的倾斜角不大于10.5°的角度。

2. 发明授权

US5880802A Active matrix liquid crystal display having insulating layer larger than display electrode and smaller than video line in thickness 失效
标题翻译：有源矩阵液晶显示器具有比显示电极大的绝缘层，并且厚度小于视频线
公开(公告)号：US5880802A
公开(公告)日：1999-03-09
申请号：US622840
申请日：1996-03-27
申请人： Hiroaki Kouno , Susumo Oima , Yasuo Segawa , Norio Tabuchi , Shouzou Ohura , Hiroki Hamada , Kiyoshi Yoneda
发明人： Hiroaki Kouno , Susumo Oima , Yasuo Segawa , Norio Tabuchi , Shouzou Ohura , Hiroki Hamada , Kiyoshi Yoneda
IPC分类号： G02F1/1333 , G02F1/1337 , G02F1/1343 , G02F1/136 , G02F1/1368 , G02F1/141
CPC分类号： G02F1/1337 , G02F2001/13373
摘要： An active matrix liquid crystal display improves its contrast by suppressing irregularity of an alignment film caused by video lines thereby reducing reverse regions on a display electrode. The active matrix liquid crystal display has first and second opposite substrates, a video line, an active element and a display electrode which are directly or indirectly formed on the first substrate, and an alignment film which is formed on or above the video line, the active element and the display electrode. The alignment film is so formed that its surface is at an angle of inclination of not more than 10.5.degree. with respect to the display electrode surface between the video line and the display electrode.
摘要翻译：有源矩阵液晶显示器通过抑制由视频线引起的取向膜的不规则性而改善其对比度，从而减少显示电极上的反向区域。有源矩阵液晶显示器具有直接或间接地形成在第一基板上的第一和第二相对基板，视频线，有源元件和显示电极以及形成在视频线上或上方的取向膜，有源元件和显示电极。取向膜形成为使得其表面相对于视频线和显示电极之间的显示电极表面处于不大于10.5°的倾斜角。

3. 发明授权

US06628363B1 Thin film transistor having a covered channel and display unit using the same 有权
标题翻译：具有覆盖通道的薄膜晶体管和使用其的显示单元
公开(公告)号：US06628363B1
公开(公告)日：2003-09-30
申请号：US09324138
申请日：1999-06-02
申请人： Keiichi Sano , Yasuo Segawa , Norio Tabuchi , Tsutomu Yamada
发明人： Keiichi Sano , Yasuo Segawa , Norio Tabuchi , Tsutomu Yamada
IPC分类号： G02F11343
CPC分类号： H01L29/78609 , G09G3/3225 , G09G3/3688 , G09G2310/0275 , H01L27/12 , H01L29/41733
摘要： A circuit having a CMOS configuration in which n-type and p-type thin film transistors are connected in a complementary manner to one another is employed as a drive circuit of a display or the like. The n-type and p-type thin film transistors have common gate electrodes and drain electrodes, with respective source electrodes being connected to difference power sources, thereby providing a complementary connection structure. A source electrode of that one of the n-type thin film transistor and the p-type thin film transistor that is subjected for a longer period of time to an off voltage, applied to the shared gate electrode, for turning that transistor off, is extended in such a manner as to overlap a channel formation region of the corresponding thin film transistor. This present a variation in characteristic of the thin film transistor.
摘要翻译：作为显示器等的驱动电路，采用其中n型和p型薄膜晶体管彼此互补地连接的CMOS结构的电路。 n型和p型薄膜晶体管具有公共栅电极和漏电极，各源极连接到差电源，从而提供互补的连接结构。 n型薄膜晶体管和p型薄膜晶体管的一个源电极被施加到共享栅电极上较长时间的截止电压，用于使该晶体管截止，为以与相应的薄膜晶体管的沟道形成区域重叠的方式延伸。这表现出薄膜晶体管的特性的变化。

4. 发明授权

US06252248B1 Thin film transistor and display 有权
标题翻译：薄膜晶体管和显示屏
公开(公告)号：US06252248B1
公开(公告)日：2001-06-26
申请号：US09326288
申请日：1999-06-07
申请人： Keiichi Sano , Yasuo Segawa , Norio Tabuchi , Tsutomu Yamada
发明人： Keiichi Sano , Yasuo Segawa , Norio Tabuchi , Tsutomu Yamada
IPC分类号： H01L2904
CPC分类号： H01L29/78696 , G02F1/136227 , G02F1/1368 , H01L29/78621 , H01L29/78645 , H01L29/78648
摘要： A gate electrode (2), a gate insulating film (3), and an active layer (4) made of a poly silicon film and having a source (5), a channel (7), and a drain (6) are formed on an insulating substrate (1) and an interlayer insulating film (9) is formed over the whole of the gate insulating film (3), the active layer (4), and a stopper insulating film (8). A drain electrode (10) is formed by filling a contact hole made in the interlayer insulating film (9), the position of which corresponds to the drain (6), with a metal, such as Al. Simultaneously with the drain electrode (10), a conductive layer (11) is formed on the interlayer insulating film (9) over the channel (7). The conductive layer (11) is connected to gate signal line G on the insulating substrate (1) via a contact hole (15) made in the gate insulating film (3) and the interlayer insulating film (9). The width of the conductive layer (11) along the length of the channel (7) is narrower than the actual length of the channel (7) and narrower than the width along the channel length of the gate electrode (2). The conductive layer (11) can therefore shield the channel (7). As a result, even if impurities or the like become attached to the surface of the interlayer insulating film (9), the occurrence of a back channel, for example, is reliably prevented.
摘要翻译：形成栅极电极（2），栅极绝缘膜（3）和由多晶硅膜制成并具有源极（5），沟道（7）和漏极（6）的有源层（4）在整个栅极绝缘膜（3），有源层（4）和阻挡绝缘膜（8）上形成绝缘基板（1）和层间绝缘膜（9）。漏极电极（10）通过用金属（例如Al）填充其位置与漏极（6）相对应的层间绝缘膜（9）中形成的接触孔而形成。与漏电极（10）同时，在沟道（7）上的层间绝缘膜（9）上形成导电层（11）。导电层（11）通过栅极绝缘膜（3）和层间绝缘膜（9）中形成的接触孔（15）连接到绝缘基板（1）上的栅极信号线G. 导电层（11）沿着沟道（7）的长度的宽度比通道（7）的实际长度窄，并且窄于沿栅极电极（2）的沟道长度的宽度。因此，导电层（11）可以屏蔽通道（7）。结果，即使杂质等附着到层间绝缘膜（9）的表面，可以可靠地防止例如背面通道的发生。

5. 发明授权

US06451636B1 Semiconductor device and display device having laser-annealed semiconductor element 有权
标题翻译：具有激光退火半导体元件的半导体器件和显示器件
公开(公告)号：US06451636B1
公开(公告)日：2002-09-17
申请号：US09151081
申请日：1998-09-10
申请人： Yasuo Segawa , Ryoichi Yokoyama , Kiyoshi Yoneda , Tsutomu Yamada
发明人： Yasuo Segawa , Ryoichi Yokoyama , Kiyoshi Yoneda , Tsutomu Yamada
IPC分类号： H01L21338
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L29/66765 , H01L29/78621 , H01L29/78678 , H01L29/78696
摘要： Regarding an element having a channel width W greater than a pitch P of a pulse laser beam, a direction of the channel width W of a channel region CH is inclined with respect to a direction of a major axis of a line beam LB. Consequently, even if a defective crystallization region R is caused by an nonuniform intensity of an irradiated region in laser annealing forming p-Si of a p-Si TFT LCD, the whole channel width W of the channel region CH does not overlap the defective crystallization region R. Therefore, even if the defective crystallization region R is generated, element characteristics are not affected. Thus, the manufacturing yield of an excellent p-Si LCD can be enhanced.
摘要翻译：关于通道宽度W大于脉冲激光束的间距P的元件，沟道区域CH的沟道宽度W的方向相对于线束LB的长轴的方向倾斜。因此，即使在由p-Si TFT LCD形成p-Si的激光退火的照射区域的不均匀强度引起有缺陷的结晶区域R的情况下，沟道区域CH的整个沟道宽度W也不会与缺陷结晶因此，即使产生不良结晶区域R，元件特性也不受影响。因此，可以提高优异的p-Si LCD的制造成品率。

6. 发明授权

US08830409B2 Liquid crystal display device having improved electrostatic discharge resistance 有权
标题翻译：具有改进的静电放电电阻的液晶显示装置
公开(公告)号：US08830409B2
公开(公告)日：2014-09-09
申请号：US12003455
申请日：2007-12-26
申请人： Yasuo Segawa , Masaaki Aota , Tomohide Onogi , Hiroshi Matsuda
发明人： Yasuo Segawa , Masaaki Aota , Tomohide Onogi , Hiroshi Matsuda
IPC分类号： G02F1/133 , G02F1/1333 , G02F1/1345 , G02F1/1362
CPC分类号： G02F1/136204 , G02F1/13452 , G02F2202/22
摘要： A liquid crystal display device includes a first substrate, a second substrate and liquid crystal. The first substrate includes pixel electrodes, a peripheral circuit and a dummy wiring. The peripheral circuit and the dummy wiring are provided outside a pixel area in which the pixel electrodes are arranged. The second substrate is opposed to the first substrate through the liquid crystal. The second substrate includes a translucent conductive film that is provided on an opposite side of the second substrate to a side where the liquid crystal is present. The dummy wiring is located on an outer peripheral side of the substrates than the peripheral circuit and is provided independently of the peripheral circuit in terms of circuit. The dummy wiring is grounded outside the first substrate.
摘要翻译：液晶显示装置包括第一基板，第二基板和液晶。第一基板包括像素电极，外围电路和虚拟布线。外围电路和虚设布线设置在像素电极配置的像素区域的外侧。第二基板通过液晶与第一基板相对。第二基板包括半透明导电膜，其设置在第二基板的与液晶存在的一侧相反的一侧。虚设布线位于基板的外周侧而不是外围电路，并且在电路方面与外围电路无关地设置。虚拟布线在第一基板的外部接地。

7. 发明授权

US08575611B2 Light-emitting display device and manufacturing method for light-emitting display device 有权
标题翻译：发光显示装置及发光显示装置的制造方法
公开(公告)号：US08575611B2
公开(公告)日：2013-11-05
申请号：US13370842
申请日：2012-02-10
申请人： Yasuo Segawa
发明人： Yasuo Segawa
IPC分类号： H01L29/04
CPC分类号： H01L27/1233 , H01L27/1288 , H01L27/3262
摘要： In the light-emitting display device according to the present invention, a side-contact structure is adopted in order to secure a TFT characteristic in a linear region (on-current). In a TFT configuring a switching transistor, a thickness of a semiconductor layer (channel layer) in a region corresponding to the source/drain electrodes is increased. In contrast, in a TFT configuring a driving transistor, in order to maintain an on current, a thickness of a semiconductor layer (channel layer) in a region corresponding to the source/drain electrodes is reduced. This configuration is manufactured using a half-tone mask. With this, it is possible to suppress the off-current in the switching transistor, while securing the on-current in the driving transistor.
摘要翻译：在根据本发明的发光显示装置中，为了确保线性区域（导通电流）中的TFT特性，采用侧接触结构。在配置开关晶体管的TFT中，与源极/漏极对应的区域中的半导体层（沟道层）的厚度增加。相反，在构成驱动晶体管的TFT中，为了保持导通电流，与源极/漏极对应的区域的半导体层（沟道层）的厚度减小。该配置使用半色调蒙版制造。由此，可以在确保驱动晶体管中的导通电流的同时，抑制开关晶体管的截止电流。

8. 发明授权

US07623211B2 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US07623211B2
公开(公告)日：2009-11-24
申请号：US12098811
申请日：2008-04-07
申请人： Masaaki Aota , Yasuo Segawa , Tomohide Onogi
发明人： Masaaki Aota , Yasuo Segawa , Tomohide Onogi
IPC分类号： G02F1/1343 , G02F1/1335
CPC分类号： G02F1/134363 , G02F1/13439
摘要： A liquid crystal display includes: a pair of substrates; a liquid crystal layer sandwiched between the pair of substrates; an insulating layer provided for a first substrate of the pair of substrates; an upper electrode provided for the first substrate; and a lower electrode provided for the first substrate. The upper electrode is formed on the surface of the insulating layer adjacent to the liquid crystal layer. The upper electrode includes a plurality of branches each having a slit therebetween. The insulating layer has irregularities.
摘要翻译：液晶显示器包括：一对基板; 夹在所述一对基板之间的液晶层; 为所述一对基板的第一基板设置的绝缘层; 设置在所述第一基板上的上电极; 以及设置在第一基板上的下电极。上部电极形成在与液晶层相邻的绝缘层的表面上。上电极包括多个分支，每个分支之间具有狭缝。绝缘层具有不规则性。

9. 发明授权

US07154117B2 Display device 失效
标题翻译：显示设备
公开(公告)号：US07154117B2
公开(公告)日：2006-12-26
申请号：US10758321
申请日：2004-01-15
申请人： Yasuo Segawa , Keiichi Sano , Kazuto Noritake
发明人： Yasuo Segawa , Keiichi Sano , Kazuto Noritake
IPC分类号： H01L29/04
CPC分类号： H01L29/78648 , G02F1/136227 , G02F1/1368 , G02F2203/02 , H01L27/12 , H01L29/78645
摘要： A display device in which variations of characteristics of a TFT are eliminated and the aperture ratio is improved is provided. A display device has a thin film transistor on an insulating substrate 10. The thin film transistor includes first gate electrodes 11, a gate insulating film 12, a semiconductor film 13 which is formed on the first gate electrode 11, and a interlayer insulating film 15. The thin film transistor further includes second gate electrodes 70 which are on the interlayer insulating film 15 and at least above channels 13c, and which are connected to the first gate electrodes 11. A reflective display electrode 19 connected to the source of the thin film transistor is elongated to extend above the thin film transistor.
摘要翻译：提供了消除TFT的特性变化和改善开口率的显示装置。显示装置在绝缘基板10上具有薄膜晶体管。薄膜晶体管包括第一栅极11，栅极绝缘膜12，形成在第一栅电极11上的半导体膜13和层间绝缘膜15。薄膜晶体管还包括在层间绝缘膜15上并且至少在通道13c上方并且连接到第一栅电极11的第二栅电极70。连接到薄膜晶体管的源极的反射显示电极19被拉长以在薄膜晶体管的上方延伸。

10. 发明授权

US09711761B2 Electro luminescence panel and method for manufacturing electro luminescence panel 有权
公开(公告)号：US09711761B2
公开(公告)日：2017-07-18
申请号：US14343871
申请日：2011-09-15
申请人： Tomomi Hiraoka , Yasuo Segawa
发明人： Tomomi Hiraoka , Yasuo Segawa
IPC分类号： H01L51/56 , H01L51/52 , H01L27/32
CPC分类号： H01L51/56 , H01L27/3241 , H01L27/3244 , H01L51/5221 , H01L51/5228 , H01L2251/5392 , H01L2251/568
摘要： The present invention provides an organic EL panel and a manufacturing method of the organic EL layer which can slow the reduction in the light emission lifetime of an organic layer and allow a short-circuit defect to be repaired. Organic EL elements include: an organic EL element including a short-circuit portion, and an altered portion formed to be highly resistive by irradiating a cathode with a laser beam; and an organic EL element which does not include the short-circuit portion. In the organic EL element, an organic EL layer emits light when a voltage higher than or equal to a first voltage is applied. In the organic EL element, the organic EL layer emits light when a voltage higher than equal to a second voltage that is higher than the first voltage is applied.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式