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1. 发明申请

US20110024742A1 PROCESS FOR PRODUCING ZnO SINGLE CRYSTAL, SELF-SUPPORTING ZnO SINGLE-CRYSTAL WAFER OBTAINED BY THE SAME, SELF-SUPPORTING WAFER OF Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, AND PROCESS FOR PRODUCING Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL FOR USE IN THE SAME 审中-公开
标题翻译：用于制造ZnO单晶，自支撑ZnO单晶的方法，含有ZnO的混合单晶的自支撑膜，以及用于生产含Mg的ZnO混合单晶的方法。
公开(公告)号：US20110024742A1
公开(公告)日：2011-02-03
申请号：US12934835
申请日：2009-03-18
申请人： Hideyuki Sekiwa , Jun Kobayashi , Miyuki Miyamoto , Naoki Ohashi , Isao Sakaguchi , Yoshiki Wada
发明人： Hideyuki Sekiwa , Jun Kobayashi , Miyuki Miyamoto , Naoki Ohashi , Isao Sakaguchi , Yoshiki Wada
IPC分类号： H01L29/22 , C30B15/00 , C30B15/04
CPC分类号： H01L21/02625 , C30B9/08 , C30B19/02 , C30B29/16 , H01L21/0237 , H01L21/0242 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L21/02581 , H01L21/02628
摘要： A ZnO single crystal can be grown on a seed crystal substrate using a liquid phase epitaxial growth method by mixing and melting ZnO as a solute and a solvent, bringing the crystal substrate into direct contact with the resultant melt, and pulling up the seed crystal substrate continuously or intermittently. A self-supporting Mg-containing ZnO mixed single crystal wafer can be obtained as follows. A Mg-containing ZnO mixed single crystal is grown using a liquid phase epitaxial growth method by mixing and melting ZnO and MgO forming a solute and a solvent, then bringing a seed crystal substrate into direct contact with the resultant melt, and pulling up the seed crystal substrate continuously or intermittently. Then, the self-supporting Mg-containing ZnO mixed single crystal wafer is obtained by removing the substrate by polishing or etching, and polishing or etching a surface, on the side of −c plane, of the single crystal grown by the liquid phase epitaxial growth method.
摘要翻译：可以使用液相外延生长法在ZnO晶体基板上生长ZnO单晶，通过将ZnO作为溶质和溶剂进行混合和熔融，使晶体基板与所得熔体直接接触，并拉出晶种基板连续或间歇地可以如下获得自支撑Mg的ZnO混合单晶晶片。使用液相外延生长法，通过混合并熔化形成溶质和溶剂的ZnO和MgO，然后使晶种基材与所得熔体直接接触，并拉出种子，生长含Mg的ZnO混合单晶晶体基板连续或间歇地。然后，通过抛光或蚀刻去除衬底，并且通过液相外延生长的单晶的-c面的表面进行抛光或蚀刻来获得自支撑Mg的ZnO混合单晶晶片生长方式。

2. 发明申请

US20120192787A1 Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, LAMINATE THEREOF AND THEIR PRODUCTION METHODS 审中-公开
标题翻译：含Mg的ZnO混合单晶，其层压体及其制备方法
公开(公告)号：US20120192787A1
公开(公告)日：2012-08-02
申请号：US13443124
申请日：2012-04-10
申请人： Hideyuki SEKIWA , Jun Kobayashi , Naoki Ohashi , Isao Sakaguchi
发明人： Hideyuki SEKIWA , Jun Kobayashi , Naoki Ohashi , Isao Sakaguchi
IPC分类号： C30B19/02 , C30B19/12
CPC分类号： C30B29/16 , C30B19/02 , H01L21/02403 , H01L21/02554 , H01L21/02565 , H01L21/02625 , H01L21/02628 , H01L33/285 , Y10T428/26
摘要： The present invention can provide an Mg-containing ZnO mixed single crystal wherein the mixed single crystal comprises an Mg-containing ZnO semiconductor having a bandgap (Eg) of 3.30
摘要翻译：本发明可以提供一种含Mg的ZnO混合单晶，其中混合单晶包含带隙（Eg）为3.30

3. 发明申请

US20100209686A1 Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, LAMINATE THEREOF AND THEIR PRODUCTION METHODS 审中-公开
标题翻译：含Mg的ZnO混合单晶，其层压体及其制备方法
公开(公告)号：US20100209686A1
公开(公告)日：2010-08-19
申请号：US12531513
申请日：2008-03-14
申请人： Hideyuki Sekiwa , Jun Kobayashi , Naoki Ohashi , Isao Sakaguchi
发明人： Hideyuki Sekiwa , Jun Kobayashi , Naoki Ohashi , Isao Sakaguchi
IPC分类号： C30B29/22 , B32B5/00 , C30B19/02 , H01L21/368
CPC分类号： C30B29/16 , C30B19/02 , H01L21/02403 , H01L21/02554 , H01L21/02565 , H01L21/02625 , H01L21/02628 , H01L33/285 , Y10T428/26
摘要： The present invention can provide an Mg-containing ZnO mixed single crystal wherein the mixed single crystal comprises an Mg-containing ZnO semiconductor having a bandgap (Eg) of 3.30≦Eg≦3.54 eV, and has a film thickness of 5 μm or less. The present invention can provide a method for producing an Mg-containing ZnO mixed single crystal by liquid phase epitaxial growth, wherein the method comprises: mixing and melting ZnO and MgO as solutes and PbO and Bi2O3 (or PbF2 and PbO) as solvents; and putting a substrate into direct contact with the obtained melt solution, thereby growing the Mg-containing ZnO mixed single crystal on the substrate.
摘要翻译：本发明可以提供一种含Mg的ZnO混合单晶，其中混合单晶包括具有3.30和n1E的带隙（Eg）的含Mg的ZnO半导体; Eg＆amp; NlE; 3.54eV，并且具有5μm或更小的膜厚度。本发明可以提供一种通过液相外延生长制备含Mg的ZnO混合单晶的方法，其中所述方法包括：将ZnO和MgO作为溶质和PbO和Bi 2 O 3（或PbF 2和PbO）作为溶剂进行混合和熔融; 并将基板与所得熔融溶液直接接触，从而在基板上生长含Mg的ZnO混合单晶。

4. 发明授权

US08257842B2 Zinc oxide-based multilayer structural body and its producing method 失效
标题翻译：氧化锌基多层结构体及其制备方法
公开(公告)号：US08257842B2
公开(公告)日：2012-09-04
申请号：US10569600
申请日：2004-08-19
申请人： Naoki Ohashi , Hajime Haneda , Haruki Ryoken , Isao Sakaguchi , Yutaka Adachi , Tadashi Takenaka
发明人： Naoki Ohashi , Hajime Haneda , Haruki Ryoken , Isao Sakaguchi , Yutaka Adachi , Tadashi Takenaka
IPC分类号： B32B19/00 , B32B9/00 , B05D1/36
CPC分类号： H01L29/7787 , H01L29/225
摘要： A zinc oxide semiconductor has a zinc oxide-based laminated structure including two layers of a zinc oxide layer with a lattice volume of Va and a donor concentration of Na, and a zinc oxide or zinc oxide solid solution layer with a lattice volume of Vb and a donor concentration of Nb. The relationships of Va Nb are satisfied. The layer with the lattice volume Va serves as a charge-supplying layer and the layer with the lattice volume Vb serves as a charge-receiving layer in the laminated structure. The charge is transferred from the layer serving as the charge-supplying layer to the layer serving as the charge-receiving layer even when no external electric field is applied to the laminated structure. A charge depletion layer is formed in the charge-supplying layer due to charge transfer from the charge-supplying layer to the charge-receiving layer.
摘要翻译：氧化锌半导体具有氧化锌系层叠结构，其包含晶格体积为Va且施主浓度为Na的氧化锌层和晶格体积为Vb的氧化锌或氧化锌固溶体层的两层，以及供体浓度为Nb。满足Va Nb的关系。具有晶格体积Va的层用作电荷供给层，并且具有晶格体积Vb的层用作层压结构中的电荷接收层。即使没有外部电场施加到层叠结构，电荷从用作电荷供给层的层转移到用作电荷接收层的层。由于从电荷供给层到电荷接收层的电荷转移，在电荷供给层中形成电荷耗尽层。

5. 发明授权

US07535162B2 Zinc oxide phosphor, process for producing the same and light emitting device 失效
标题翻译：氧化锌荧光粉，其制造方法和发光装置
公开(公告)号：US07535162B2
公开(公告)日：2009-05-19
申请号：US10554724
申请日：2004-04-30
申请人： Naoki Ohashi , Takamasa Ishigaki , Hiroyuki Taguchi , Isao Sakaguchi , Hajime Haneda , Takashi Sekiguchi
发明人： Naoki Ohashi , Takamasa Ishigaki , Hiroyuki Taguchi , Isao Sakaguchi , Hajime Haneda , Takashi Sekiguchi
IPC分类号： H01J1/62
CPC分类号： C09K11/623 , Y10T428/2991
摘要： The present invention relates to a zinc oxide phosphor characterized by emitting visible light with a broad emission spectrum close to white, and a process for producing the same. A powder prepared by adding a plurality of additives to zinc oxide and heat-treating the resulting mixture is further hydrogenated to improve the luminous efficiency of the zinc oxide phosphor. The zinc oxide phosphor providing a broad emission spectrum covering a wavelength range over substantially the entire visible region can be applied to a white diode, a white vacuum fluorescent display, and a fluorescent paint.
摘要翻译：本发明涉及一种氧化锌荧光体，其特征在于以接近白色的宽发光光谱发射可见光，以及其制造方法。将通过向氧化锌中添加多种添加剂并对所得混合物进行热处理而制备的粉末进一步氢化以提高氧化锌荧光体的发光效率。提供覆盖基本上整个可见区域的波长范围的宽发射光谱的氧化锌荧光体可以应用于白色二极管，白色真空荧光显示器和荧光涂料。

6. 发明授权

US07362209B2 Zinc oxide resistor and its manufacturing method 失效
标题翻译：氧化锌电阻及其制造方法
公开(公告)号：US07362209B2
公开(公告)日：2008-04-22
申请号：US10537492
申请日：2003-12-02
申请人： Naoki Ohashi , Hajime Haneda , Isao Sakaguchi , Takeshi Ohgaki , Ken Kataoka
发明人： Naoki Ohashi , Hajime Haneda , Isao Sakaguchi , Takeshi Ohgaki , Ken Kataoka
IPC分类号： H01C7/10 , H01C7/13
CPC分类号： H01C7/112
摘要： Disclosed are a zinc oxide resistor structure, and methods of forming a glass layer and a resistor, which are required for producing the resistor structure. The zinc oxide resistor comprises zinc oxide grains and an oxide glass layer which contains bismuth and boron and intervenes between the zinc oxide grains. The oxide glass layer residing between the zinc oxide grains changes the electric properties between the grains to achieve a higher resistance and a non-ohmic characteristic of a voltage-dependent resistance value in the resistor. This non-ohmic characteristic can be applied, particularly, to a non-ohmic device to be compatible with a low-voltage operation. Differently from conventional resistors, the oxide glass layer intervening between the zinc oxide grains can achieve an enhanced mechanical strength of a junction in the device.
摘要翻译：公开了一种氧化锌电阻器结构，以及形成电阻器结构所需的玻璃层和电阻器的形成方法。氧化锌电阻器包括氧化锌晶粒和含有铋和硼并且介于氧化锌晶粒之间的氧化物玻璃层。位于氧化锌晶粒之间的氧化物玻璃层改变晶粒之间的电特性，以实现电阻器中较高的电阻和非电阻特性的电压依赖性电阻值。该非欧姆特性可以特别适用于与欧姆电阻器件兼容的低电压工作。与传统电阻器不同，介于氧化锌晶粒之间的氧化物玻璃层可以实现器件中结的机械强度的增强。

7. 发明申请

US20070158615A1 Zinc oxide phosphor, process die producing the same and light emitting device 失效
标题翻译：氧化锌荧光粉，工艺模具生产和发光装置
公开(公告)号：US20070158615A1
公开(公告)日：2007-07-12
申请号：US10554724
申请日：2004-04-30
申请人： Naoki Ohashi , Takamasa Ishigaki , Hiroyuki Taguchi , Isao Sakaguchi , Hajime Haneda , Takashi Sekiguchi
发明人： Naoki Ohashi , Takamasa Ishigaki , Hiroyuki Taguchi , Isao Sakaguchi , Hajime Haneda , Takashi Sekiguchi
IPC分类号： C09K11/77
CPC分类号： C09K11/623 , Y10T428/2991
摘要： The present invention relates to a zinc oxide phosphor characterized by emitting visible light with a broad emission spectrum close to white, and a process for producing the same. A powder prepared by adding a plurality of additives to zinc oxide and heat-treating the resulting mixture is further hydrogenated to improve the luminous efficiency of the zinc oxide phosphor. The zinc oxide phosphor providing a broad emission spectrum covering a wavelength range over substantially the entire visible region can be applied to a white diode, a white vacuum fluorescent display, and a fluorescent paint.
摘要翻译：本发明涉及一种氧化锌荧光体，其特征在于以接近白色的宽发光光谱发射可见光，以及其制造方法。将通过向氧化锌中添加多种添加剂并对所得混合物进行热处理而制备的粉末进一步氢化，以提高氧化锌荧光体的发光效率。提供覆盖基本上整个可见区域的波长范围的宽发射光谱的氧化锌荧光体可以应用于白色二极管，白色真空荧光显示器和荧光涂料。

8. 发明申请

US20070111033A1 Zinc oxide-based multilayer structural body and its producing method 失效
标题翻译：氧化锌基多层结构体及其制备方法
公开(公告)号：US20070111033A1
公开(公告)日：2007-05-17
申请号：US10569600
申请日：2004-08-19
申请人： Naoki Ohashi , Hajime Haneda , Haruki Ryoken , Isao Sakaguchi , Yutaka Adachi , Tadashi Takenaka
发明人： Naoki Ohashi , Hajime Haneda , Haruki Ryoken , Isao Sakaguchi , Yutaka Adachi , Tadashi Takenaka
IPC分类号： B32B19/00 , B32B9/00 , B05D1/36
CPC分类号： H01L29/7787 , H01L29/225
摘要： The present invention is effective for causing charge separation by complexing zinc oxide crystals in different states one another when a zinc oxide semiconductor is used as an electronic element. The present invention provides a zinc oxide-based laminated structure comprising two layers of a zinc oxide or zinc oxide solid solution layer with a lattice volume of Va and a donor concentration of Na, and a zinc oxide or zinc oxide solid solution layer with a lattice volume of Vb and a donor concentration of Nb, wherein the relationships of Va Nb being satisfied between both layers of the laminated structures; and the layer with the lattice volume Va serves as a charge-supplying layer and the layer with the lattice volume Vb serves as a charge-receiving layer in the laminated structure. The charge is transferred from the layer serving as the charge-supplying layer to the layer serving as the charge-receiving layer even when no external electric field is applied to the laminated structure; and a charge depletion layer is formed in the charge-supplying layer due to charge transfer from the charge-supplying layer to the charge-receiving layer.
摘要翻译：当使用氧化锌半导体作为电子元件时，本发明对于通过使不同状态的氧化锌晶体络合而引起电荷分离是有效的。本发明提供了一种氧化锌基层压结构，其包括晶格体积为Va且施主浓度为Na的氧化锌或氧化锌固溶体层和具有晶格的氧化锌或氧化锌固溶体层的两层 Vb的体积和Nb的供体浓度，其中满足层叠结构的两层之间的Va Nb的关系; 并且具有晶格体积Va的层用作电荷供给层，并且具有晶格体积Vb的层用作层压结构中的电荷接收层。即使没有外部电场施加到层叠结构，电荷从用作电荷供应层的层转移到用作电荷接收层的层; 并且由于从电荷供给层到电荷接收层的电荷转移，在电荷供给层中形成电荷耗尽层。

9. 发明申请

US20060164200A1 Zinc oxide resistor and its manufacturing method 失效
标题翻译：氧化锌电阻及其制造方法
公开(公告)号：US20060164200A1
公开(公告)日：2006-07-27
申请号：US10537492
申请日：2003-12-02
申请人： Naoki Ohashi , Hajime Haneda , Isao Sakaguchi , Takeshi Ohgaki , Ken Kataoka
发明人： Naoki Ohashi , Hajime Haneda , Isao Sakaguchi , Takeshi Ohgaki , Ken Kataoka
IPC分类号： H01C7/10
CPC分类号： H01C7/112
摘要： Disclosed are a zinc oxide resistor structure, and methods of forming a glass layer and a resistor, which are required for producing the resistor structure. The zinc oxide resistor comprises zinc oxide grains and an oxide glass layer which contains bismuth and boron and intervenes between the zinc oxide grains. The oxide glass layer residing between the zinc oxide grains changes the electric properties between the grains to achieve a higher resistance and a non-ohmic characteristic of a voltage-dependent resistance value in the resistor. This non-ohmic characteristic can be applied, particularly, to a non-ohmic device to be compatible with a low-voltage operation. Differently from conventional resistors, the oxide glass layer intervening between the zinc oxide grains can achieve an enhanced mechanical strength of a junction in the device.
摘要翻译：公开了一种氧化锌电阻器结构，以及形成电阻器结构所需的玻璃层和电阻器的形成方法。氧化锌电阻器包括氧化锌晶粒和含有铋和硼并且介于氧化锌晶粒之间的氧化物玻璃层。位于氧化锌晶粒之间的氧化物玻璃层改变晶粒之间的电特性，以实现电阻器中较高的电阻和非电阻特性的电压依赖性电阻值。该非欧姆特性可以特别适用于与欧姆电阻器件兼容的低电压工作。与传统电阻器不同，介于氧化锌晶粒之间的氧化物玻璃层可以实现器件中结的机械强度的增强。

10. 发明申请

US20090031803A1 FALL DETECTING METHOD AND FALL DETECTING DEVICE 失效
标题翻译：落地检测方法和落地检测装置
公开(公告)号：US20090031803A1
公开(公告)日：2009-02-05
申请号：US11813576
申请日：2006-01-19
申请人： Masaru Noda , Isao Sakaguchi
发明人： Masaru Noda , Isao Sakaguchi
IPC分类号： G01P15/00
CPC分类号： G01P15/18 , A61B5/1117 , A61B2562/0219 , G01P15/0891 , G11B19/04
摘要： A fall detecting method and a device for detecting a fall with high accuracy even when an object touches a human or a thing while falling. The fall detecting device comprises output detecting means for generating an acceleration detection output after comparing the magnitude of acceleration detected by a three-axis acceleration sensor with a certain threshold, output interruption correcting means for generating an output interruption corrected acceleration output which is corrected for an interruption when a fall acceleration output recovers within a first predetermined time after the fall acceleration output interrupts, and output continuation time judging means for generating a fall judgment output when the output interruption corrected acceleration output continues for a second predetermined time longer than the first predetermined time.
摘要翻译：一种跌落检测方法和即使当物体在跌倒时接触人或物体时也以高精度检测跌落的装置。坠落检测装置包括输出检测装置，用于在将由三轴加速度传感器检测的加速度的大小与某一阈值进行比较之后产生加速度检测输出;输出中断校正装置，用于产生输出中断校正加速度输出，当下降加速度输出中断后的第一预定时间内的下降加速度输出恢复时的中断，以及当输出中断校正加速度输出持续比第一预定时间长的第二预定时间时产生下降判断输出的输出持续时间判断装置。

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