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1. 发明授权

US4540971A Metal oxide varistor made by a co-precipation process and freeze-dried 失效
标题翻译：金属氧化物变阻器通过共沉淀法制成并冷冻干燥
公开(公告)号：US4540971A
公开(公告)日：1985-09-10
申请号：US506768
申请日：1983-06-22
申请人： Hideyuki Kanai , Takashi Takahashi , Motomasa Imai , Osamu Furukawa , Hiroshi Endo , Osamu Hirao , Masaru Hayashi
发明人： Hideyuki Kanai , Takashi Takahashi , Motomasa Imai , Osamu Furukawa , Hiroshi Endo , Osamu Hirao , Masaru Hayashi
IPC分类号： H01C7/10 , H01C7/112 , H01B1/08
CPC分类号： H01C7/112 , Y10T29/49082
摘要： A metal oxide varistor is disclosed which a component of grain bodies comprised of zinc oxide and a component of grain boundary layers comprised of another metallic oxide, containing metal other than zinc wherein at least a portion of these starting materials comprised a fine particle powder prepared by a co-precipitatin method.The metal oxide varistor of the present invention is excellent in varistor characteristics such as non-linearity to voltage, life performances and capability of energy dissipation, is small in a scatter of the above characteristics between manufacture lots or within each lot at the time of manufacture, and has a good quality stability. Unexpected results are obtained when the co-precipitated fine particles are subjected to a refrigeration-dehydration type process.
摘要翻译：公开了一种金属氧化物变阻器，其中由氧化锌组成的晶粒组成部分和由除了锌之外的金属的另一种金属氧化物组成的晶界层的组分，其中这些起始材料的至少一部分包含由共沉淀法。本发明的金属氧化物变阻器具有优异的非线性电压，寿命性能和能量耗散等非线性电阻特性，在制造批次之间或在制造时间内的各批次内的上述特性的散射小，质量稳定。当共沉淀的微粒进行冷冻 - 脱水型处理时，获得了意想不到的结果。

2. 发明授权

US4535314A Varistor includes oxides of bismuth, cobalt, manganese, antimony, nickel and trivalent aluminum 失效
标题翻译：压敏电阻包括铋，钴，锰，锑，镍和三价铝的氧化物
公开(公告)号：US4535314A
公开(公告)日：1985-08-13
申请号：US563250
申请日：1983-12-19
申请人： Hideyuki Kanai , Takashi Takahashi , Motomasa Imai , Osamu Furukawa
发明人： Hideyuki Kanai , Takashi Takahashi , Motomasa Imai , Osamu Furukawa
IPC分类号： H01C7/10 , C04B35/453 , H01C7/112 , C04B35/00
CPC分类号： H01C7/112
摘要： A varistor having good voltage-current nonlinear characteristics and a long life performance. The varistor is formed of a sintered body consisting essentially of zinc oxide as a major component, 0.1 to 5 mol % of bismuth in terms of Bi.sub.2 O.sub.3, 0.1 to 5 mol % of cobalt in terms of Co.sub.2 O.sub.3, 0.1 to 5 mol % of manganese in terms of MnO, 0.1 to 5 mol % of antimony in terms of Sb.sub.2 O.sub.3, 0.1 to 5 mol % of nickel in terms of NiO, and 0.001 to 0.05 mol % of aluminum in terms of Al.sup.3+.
摘要翻译：具有电压 - 电流非线性特性好，寿命长的变阻器。变阻器由以氧化锌为主要成分的烧结体形成，以Bi 2 O 3为0.1〜5摩尔％的铋，以Co 2 O 3换算为0.1〜5摩尔％的钴，0.1〜5摩尔％的锰 MnO为0.1〜5摩尔％，Sb2O3为0.1〜5摩尔％，NiO为0.1〜5摩尔％，Al 3+为0.001〜0.05摩尔％。

3. 发明授权

US4527146A Varistor 失效
标题翻译：压敏电阻
公开(公告)号：US4527146A
公开(公告)日：1985-07-02
申请号：US564100
申请日：1983-12-22
申请人： Hideyuki Kanai , Osamu Furukawa , Motomasa Imai , Takashi Takahashi
发明人： Hideyuki Kanai , Osamu Furukawa , Motomasa Imai , Takashi Takahashi
IPC分类号： H01C7/112 , H01C7/10
CPC分类号： H01C7/112
摘要： A varistor comprising a basic component consisting essentially of ZnO as a principal constituent and, as auxiliary components, bismuth (Bi), cobalt (Co), manganese (Mn), antimony (Sb) and nickel (Ni) in an amount, when calculated in terms of Bi.sub.2 O.sub.3, Co.sub.2 O.sub.3, MnO, Sb.sub.2 O.sub.3 and NiO, respectively, of Bi.sub.2 O.sub.3 : 0.1 to 5 mol %, Co.sub.2 O.sub.3 : 0.1 to 5 mol %, MnO: 0.1 to 5 mol %, Sb.sup.2 O.sub.3 : 0.1 to 5 mol % and NiO: 0.1 to 5 mol %; and an additional constituent comprising boron (B) in an amount, when calculated in terms of B.sub.2 O.sub.3, of 0.001 to 1 wt % based on said basic component, the Bi.sub.2 O.sub.3 of the sintered body comprising not less than 30% of .alpha.-phase . In another embodiment, the above basic component may further comprise at least one of Al, In and Ga in a prescribed amount and the above additional component may be (i) B with or without at least one of Ag and Si in a prescribed amount or (ii) a glass containing B in a prescribed amount.
摘要翻译：一种变阻器，其包含基本上由ZnO作为主要成分的碱性组分，以及作为辅助成分的铋（Bi），钴（Co），锰（Mn），锑（Sb）和镍（Ni） Bi2O3：0.1〜5mol％，Co2O3：0.1〜5mol％，MnO：0.1〜5mol％，Sb2O3：0.1〜5mol％的Bi2O3，Co2O3，MnO，Sb2O3，NiO，NiO： 0.1〜5摩尔％和含有硼（B）的另外的组分，当以B 2 O 3计算时，硼（B）的含量相对于所述碱性组分为0.001〜1重量％，所述烧结体的Bi 2 O 3为不小于30％的α相。在另一个实施方案中，上述碱性组分还可以包含规定量的Al，In和Ga中的至少一种，并且上述附加组分可以是（i）具有或不具有规定量的Ag和Si中的至少一种的B，（ii）含有规定量的B的玻璃。

4. 发明授权

US4516105A Metal oxide varistor with non-diffusable electrodes 失效
标题翻译：具有非扩散电极的金属氧化物变阻器
公开(公告)号：US4516105A
公开(公告)日：1985-05-07
申请号：US395278
申请日：1982-07-06
申请人： Motomasa Imai , Takashi Takahashi , Osamu Furukawa , Hideyuki Kanai
发明人： Motomasa Imai , Takashi Takahashi , Osamu Furukawa , Hideyuki Kanai
IPC分类号： H01C7/10 , C04B35/453 , H01C7/112 , C04B35/00
CPC分类号： H01C7/112
摘要： Disclosed is a metal oxide varistor which comprises; a sintered body containing (a) ZnO as a principal component, and (b), as auxiliary components, Bi, Co and Mn in amounts of 0.05.about.2 mole %, 0.05.about.2 mole % and 0.05.about.2 mole %, when calculated in terms of Bi.sub.2 O.sub.3, Co.sub.2 O.sub.3 and MnO.sub.2, respectively, and at least one selected from Al, In and Ga in amounts of 1.times.10.sup.-4 .about.3.times.10.sup.-2 mole %, when calculated in terms of Al.sub.2 O.sub.3, In.sub.2 O.sub.3 and Ga.sub.2 O.sub.3, respectively; said sintered material having been reheated at a temperature of 650.degree..about.900.degree. C. after sintering; and a non-diffusible electrode provided on said sintered body. The metal oxide varistor has excellent pulse response and volt-ampere non-linearity even with respect to a pulse having a short rise time of less than a microsecond.
摘要翻译：公开了一种金属氧化物变阻器，其包括：含有（a）ZnO作为主要成分的烧结体，和（b）作为辅助成分的Bi，Co和Mn，其量为0.05DIFFERENCE 2摩尔％，0.05差异2摩尔％和0.05差异2摩尔％，当计算分别以Bi 2 O 3，Co 2 O 3和MnO 2为单位，以Al 2 O 3，In 2 O 3和Ga 2 O 3计算，选自Al，In和Ga中的至少1种为1×10 -4 DIFFERENCE 3×10 -2摩尔％所述烧结材料在烧结后在650℃的温度下再加热; 以及设置在所述烧结体上的非扩散电极。金属氧化物变阻器即使对于具有小于一微秒的短上升时间的脉冲也具有优异的脉冲响应和伏安非线性。

5. 发明授权

US4701767A Magnetic recording head and method for manufacturing 失效
标题翻译：磁记录头及制造方法
公开(公告)号：US4701767A
公开(公告)日：1987-10-20
申请号：US870898
申请日：1986-06-05
申请人： Motomasa Imai , Mitsuo Harata , Takashi Takahashi , Kazuo Nishijima
发明人： Motomasa Imai , Mitsuo Harata , Takashi Takahashi , Kazuo Nishijima
IPC分类号： G03G15/05 , B41J2/395 , G03G19/00 , G01D15/12
CPC分类号： G03G19/00
摘要： A method is disclosed which manufactures a recording head adapted to be moved relative to a recording medium, which is comprised of a conductive substrate and dielectric layer formed on the conductive substrate, to permit data to be recorded on the recording medium with the use of a conductive/magnetic toner on the recording medium. A conductive/magnetic sheet is attached to an insulating substrate of a first size with an adhesive layer therebetween, the first size of the insulating substrate is greater than a second size thereof defined by an insulating substrate of a finally completed recording head. The conductive/magnetic sheet is selectively etched to form an array of slits at a predetermined interval with both ends of the slits located beyond the side edges of an insulating substrate of a finally completed recording head. At one side edge portion of the conductive/magnetic sheet the conductive/magnetic sheet is electroplated to form a plated layer for a bonding pad. Those areas of the conductive/magnetic sheet, plated layer and insulating substrate, which are located beyond the side edge of the insulating substrate of the finally completed recording head, are cut to form a parallel array of electrodes and a bonding pad on one side edge portion of the conductive/magnetic electrodes.
摘要翻译：公开了一种制造适于相对于记录介质移动的记录头的方法，该记录介质由形成在导电基底上的导电基底和电介质层组成，以便使用数据记录在记录介质上导电/磁性调色剂在记录介质上。将导电/磁性薄片附着在第一尺寸的绝缘基板上，其间具有粘合剂层，绝缘基板的第一尺寸大于由最终完成的记录头的绝缘基板限定的第二尺寸。选择性地蚀刻导电/磁性薄片以形成狭缝阵列，以预定的间隔，狭缝的两端位于最终完成的记录头的绝缘基底的侧边缘之外。在导电/磁性片的一个侧边缘部分，电导/磁性片被电镀以形成用于焊盘的镀层。将位于超过最终完成的记录头的绝缘衬底的侧边缘的导电/磁性片，镀层和绝缘衬底的那些区域切割成在一个侧边缘上形成平行的电极阵列和焊盘部分导电/磁极。

6. 发明授权

US4818736A High dielectric constant type ceramic composition 失效
标题翻译：高介电常数陶瓷组合物
公开(公告)号：US4818736A
公开(公告)日：1989-04-04
申请号：US157149
申请日：1988-02-11
申请人： Yohachi Yamashita , Osamu Furukawa , Mitsuo Harata , Takashi Takahashi
发明人： Yohachi Yamashita , Osamu Furukawa , Mitsuo Harata , Takashi Takahashi
IPC分类号： C04B35/499 , H01G4/12 , C04B35/46
CPC分类号： C04B35/499 , H01G4/1218 , H01G4/1254
摘要： When a portion of the Pb of a Pb(Zn.sub.1/3 Nb.sub.2/3)O.sub.3 -based ceramic composition within the region bounded by lines connecting a, b, c and d points in the ternary composition diagram of the accompanying FIG. 1 is substituted by a small amount of Ba and/or Sr, a high dielectric constant type ceramic composition which has a small temperature coefficient of dielectric constant and which is effective as a material for multilayer ceramic capacitors is obtained.
摘要翻译：当Pb（Zn1 / 3Nb2 / 3）O3系陶瓷组合物的Pb的一部分在由连接a，b，c和d的线连接的区域内，在附图3的三元组成图中指出。 1被少量的Ba和/或Sr代替，获得了介电常数小的并且作为多层陶瓷电容器的材料有效的高介电常数型陶瓷组合物。

7. 发明授权

US4224174A Piezoelectric oxide materials 失效
标题翻译：压电氧化物材料
公开(公告)号：US4224174A
公开(公告)日：1980-09-23
申请号：US974545
申请日：1978-12-29
申请人： Hideo Okuma , Takashi Takahashi , Yohachi Yamashita , Osamu Furukawa
发明人： Hideo Okuma , Takashi Takahashi , Yohachi Yamashita , Osamu Furukawa
IPC分类号： C04B35/46 , C04B35/472 , H01B3/12 , H01L41/187
CPC分类号： H01L41/187 , C04B35/472
摘要： A piezoelectric oxide material having a general formula(1-x)PbTiO.sub.3 -xPb(CO.sub.1/2 W.sub.1/2)O.sub.3where, "x" ranges between 0.01 and 0.20, and 0.5 to 20 atomic % of Pb is replaced by at least one element selected from the group of Ba, Sr and Ca.The piezoelectric oxide material of this composition has a high Curie point, is suitable for use in high frequency regions and can be readily polarized.
摘要翻译：具有通式（1-x）PbTiO3-xPb（CO1 / 2W1 / 2）O3的压电氧化物材料，其中“x”在0.01和0.20之间，而0.5至20原子％的Pb被至少一个元素选自Ba，Sr和Ca组。该组合物的压电氧化物材料具有高的居里点，适用于高频区域，并且可以容易地极化。

8. 发明授权

US07968362B2 Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system 有权
标题翻译：半导体发光器件，表面发射激光二极管及其制造装置，制造方法，光模块和光通信系统
公开(公告)号：US07968362B2
公开(公告)日：2011-06-28
申请号：US12408362
申请日：2009-03-20
申请人： Takashi Takahashi , Morimasa Kaminishi , Shunichi Sato , Akihiro Itoh , Naoto Jikutani
发明人： Takashi Takahashi , Morimasa Kaminishi , Shunichi Sato , Akihiro Itoh , Naoto Jikutani
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , B82Y20/00 , C23C16/301 , C23C16/54 , C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L33/025 , H01L33/10 , H01L33/32 , H01S5/0014 , H01S5/02284 , H01S5/18305 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18394 , H01S5/3211 , H01S5/32366 , H01S5/343 , H01S5/34306 , H01S5/34333 , H01S2304/04
摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
摘要翻译：半导体发光器件具有在衬底和含有氮的有源层之间包含Al的半导体层，其中在生长所述有源层之前从生长室中除去Al和氧，并且与Al一起掺入所述有源层中的氧浓度被设定为使得所述半导体发光装置能够在室温下进行连续激光振荡的电平。

9. 发明授权

US07881357B2 Vertical cavity surface-emitting semiconductor laser device, optical transmission module, optical transmission device, and optical switching method 有权
标题翻译：垂直腔表面发射半导体激光器件，光传输模块，光传输器件和光开关方法
公开(公告)号：US07881357B2
公开(公告)日：2011-02-01
申请号：US12153152
申请日：2008-05-14
申请人： Takashi Takahashi
发明人： Takashi Takahashi
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/0425 , H01S5/06226 , H01S5/1021 , H01S5/18302 , H01S5/18308 , H01S5/1833 , H01S5/18358 , H01S5/2063 , H01S5/34306 , H01S5/3432
摘要： In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled optically, and a gain of an active layer at the first resonance wavelength on the side of short wavelength is higher than that at the second resonance wavelength on the side of long wavelength. An absorption coefficient of an optical absorption layer when no electric field is applied is small for the first and second resonance wavelengths, and when an electric field is applied, an absorption coefficient of the optical absorption layer for the first resonance wavelength on the side of short wavelength is larger than that for the second resonance wavelength on the side of long wavelength.
摘要翻译：在垂直腔表面发射半导体激光器件中，在第一谐振器和第二谐振器被光耦合的同时提供不同的第一和第二谐振波长，并且在短边的第一谐振波长处的有源层的增益波长比在长波长侧的第二共振波长处高。当不施加电场时光吸收层的吸收系数对于第一和第二共振波长小，并且当施加电场时，第一共振波长的光吸收层的吸收系数在短边波长比在长波长侧的第二共振波长的波长大。

10. 发明申请

US20100195691A1 LASER DIODE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE PRODUCING VISIBLE-WAVELENGTH RADIATION 有权
标题翻译：产生可见波长辐射的激光二极管和半导体发光器件
公开(公告)号：US20100195691A1
公开(公告)日：2010-08-05
申请号：US12696322
申请日：2010-01-29
申请人： Naoto Jikutani , Takashi Takahashi , Shunichi Sato
发明人： Naoto Jikutani , Takashi Takahashi , Shunichi Sato
IPC分类号： H01S5/187
CPC分类号： H01S5/2202 , B82Y20/00 , H01S5/22 , H01S5/2206 , H01S5/2209 , H01S5/221 , H01S5/2231 , H01S5/3201 , H01S5/3434
摘要： A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.
摘要翻译：激光二极管包括具有GaAs晶格常数或GaAs和GaP之间的基板，在基板上形成的AlGaInP的第一包层，形成在第一包层上的GaInAsP的有源层，形成在第一包层上的GaInP的蚀刻停止层有源层，在蚀刻阻挡层上形成一对AlGaInP的电流阻挡区域，以便限定它们之间的条带区域，形成在一对电流阻挡区域上以覆盖蚀刻阻挡层的AlGaInP光波导层以及形成在光波导层上的AlGaInP的第二包覆层，其中，所述电流阻挡区域的Al含量基本上与第二包层的Al含量相同。

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