会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07348673B2
    • 2008-03-25
    • US11180729
    • 2005-07-14
    • Katsumi KikuchiShintaro YamamichiHideya MuraiHirokazu HondaKoji SoejimaShinichi Miyazaki
    • Katsumi KikuchiShintaro YamamichiHideya MuraiHirokazu HondaKoji SoejimaShinichi Miyazaki
    • H01L23/48
    • H01L23/528H01L23/3114H01L23/5286H01L2924/0002H01L2924/3011H01L2924/00
    • A minute wiring structure portion including first wiring layers and first insulating layers, in which each of first wiring layers and each of first insulating layers are alternately laminated, is formed on a semiconductor substrate. A first huge wiring structure portion is formed on the minute wiring structure portion, and the first huge wiring structure portion is formed by successively forming on the minute wiring structure portion, in the following order, the first huge wiring portion including second wiring layers has a thickness of twice or more of the thickness of the first wiring layers and second insulating layers, in which each of second wiring layers and each of second wiring layers are alternately laminated, and a second huge wiring structure portion including third wiring layers has a thickness of twice or more of the thickness of the first wiring layer and a third insulating layer in which the elastic modulus at 25° C. is not more than that of the second insulating layers, each of the third wiring layers and each of the third insulating layers being alternately laminated.
    • 在半导体基板上形成包括第一布线层和第一绝缘层的微小布线结构部分,其中第一布线层和每个第一绝缘层交替层叠。 第一巨型布线结构部分形成在微小布线结构部分上,并且第一巨大的布线结构部分通过在微小的布线结构部分上依次形成,按照以下顺序形成包括第二布线层的第一巨大布线部分具有 其中第二布线层和每个第二布线层交替层叠的第一布线层和第二绝缘层的厚度的两倍或更多的厚度,以及包括第三布线层的第二巨大布线结构部分的厚度为 第一布线层的厚度的2倍以上,25℃下的弹性模量不大于第2绝缘层的弹性模量的第3绝缘层,第3布线层和第3绝缘层 交替层压。
    • 6. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20060012029A1
    • 2006-01-19
    • US11180729
    • 2005-07-14
    • Katsumi KikuchiShintaro YamamichiHideya MuraiHirokazu HondaKoji SoejimaShinichi Miyazaki
    • Katsumi KikuchiShintaro YamamichiHideya MuraiHirokazu HondaKoji SoejimaShinichi Miyazaki
    • H01L23/12
    • H01L23/528H01L23/3114H01L23/5286H01L2924/0002H01L2924/3011H01L2924/00
    • A minute wiring structure portion including first wiring layers and first insulating layers, in which each of first wiring layers and each of first insulating layers are alternately laminated, is formed on a semiconductor substrate. A first huge wiring structure portion is formed on the minute wiring structure portion, and the first huge wiring structure portion is formed by successively forming on the minute wiring structure portion, in the following order, the first huge wiring portion including second wiring layers has a thickness of twice or more of the thickness of the first wiring layers and second insulating layers, in which each of second wiring layers and each of second wiring layers are alternately laminated, and a second huge wiring structure portion including third wiring layers has a thickness of twice or more of the thickness of the first wiring layer and a third insulating layer in which the elastic modulus at 25° C. is not more than that of the second insulating layers, each of the third wiring layers and each of the third insulating layers being alternately laminated.
    • 在半导体基板上形成包括第一布线层和第一绝缘层的微小布线结构部分,其中第一布线层和每个第一绝缘层交替层叠。 第一巨型布线结构部分形成在微小布线结构部分上,并且第一巨大的布线结构部分通过在微小的布线结构部分上依次形成,按照以下顺序形成包括第二布线层的第一巨大布线部分具有 其中第二布线层和每个第二布线层交替层叠的第一布线层和第二绝缘层的厚度的两倍或更多的厚度,以及包括第三布线层的第二巨大布线结构部分的厚度为 第一布线层的厚度的2倍以上,25℃下的弹性模量不大于第2绝缘层的弹性模量的第3绝缘层,第3布线层和第3绝缘层 交替层压。