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1. 发明授权

US08236668B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US08236668B2
公开(公告)日：2012-08-07
申请号：US12244414
申请日：2008-10-02
申请人： Hideto Ohnuma , Takashi Shingu , Tetsuya Kakehata , Kazutaka Kuriki , Shunpei Yamazaki
发明人： Hideto Ohnuma , Takashi Shingu , Tetsuya Kakehata , Kazutaka Kuriki , Shunpei Yamazaki
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： An object of the present invention is to provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even where a substrate having a low upper temperature limit such as a glass substrate is used. The manufacturing method compromises the steps of preparing a semiconductor substrate provided with a bonding layer formed on a surface thereof and a separation layer formed at a predetermined depth from the surface thereof, bonding the bonding layer to the base substrate having a distortion point of 700° C. or lower so that the semiconductor substrate and the base substrate face each other, and separating a part of the semiconductor substrate at the separation layer by heat treatment in order to form a single-crystal semiconductor layer over the base substrate. In the manufacturing method, a substrate which shrinks isotropically at least by the heat treatment is used as the base substrate.
摘要翻译：本发明的目的是提供一种制造具有半导体层的SOI衬底的方法，即使在使用诸如玻璃衬底的上限温度低的衬底的情况下也可以使用。制造方法损害了制备其表面上形成有接合层的半导体衬底和从其表面形成在预定深度的分离层的步骤，将接合层粘合到具有700°的变形点的基底 C.或更低，使得半导体衬底和基底基板彼此面对，并且通过热处理在分离层处分离半导体衬底的一部分，以在基底衬底上形成单晶半导体层。在制造方法中，使用至少通过热处理各向同性收缩的基板作为基底。

2. 发明授权

US08273611B2 Method for manufacturing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US08273611B2
公开(公告)日：2012-09-25
申请号：US12840379
申请日：2010-07-21
申请人： Tetsuya Kakehata , Kazutaka Kuriki
发明人： Tetsuya Kakehata , Kazutaka Kuriki
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A single crystal semiconductor layer is formed over a substrate having an insulating surface by the following steps: forming an ion doped layer at a given depth from a surface of a single crystal semiconductor substrate; performing plasma treatment to the surface of the single crystal semiconductor substrate; forming an insulating layer on the single crystal semiconductor substrate to which the plasma treatment is performed; bonding the single crystal semiconductor substrate to the substrate having the insulating surface with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate using the ion doped layer as a separation surface. As a result, a semiconductor substrate in which a defect in an interface between the single crystal semiconductor layer and the insulating layer is reduced can be provided.
摘要翻译：通过以下步骤在具有绝缘表面的衬底上形成单晶半导体层：从单晶半导体衬底的表面形成在给定深度处的离子掺杂层; 对所述单晶半导体衬底的表面进行等离子体处理; 在进行等离子体处理的单晶半导体基板上形成绝缘层; 将单晶半导体衬底与绝缘表面的衬底接合在绝缘层之间; 以及使用离子掺杂层作为分离表面分离单晶半导体衬底。结果，可以提供其中单晶半导体层和绝缘层之间的界面的缺陷减小的半导体衬底。

3. 发明授权

US07763502B2 Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and electronic device 失效
标题翻译：半导体衬底，半导体衬底的制造方法，半导体器件和电子器件
公开(公告)号：US07763502B2
公开(公告)日：2010-07-27
申请号：US12213308
申请日：2008-06-18
申请人： Tetsuya Kakehata , Kazutaka Kuriki
发明人： Tetsuya Kakehata , Kazutaka Kuriki
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A single crystal semiconductor layer is formed over a substrate having an insulating surface by the following steps: forming an ion doped layer at a given depth from a surface of a single crystal semiconductor substrate; performing plasma treatment to the surface of the single crystal semiconductor substrate; forming an insulating layer on the single crystal semiconductor substrate to which the plasma treatment is performed; bonding the single crystal semiconductor substrate to the substrate having the insulating surface with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate using the ion doped layer as a separation surface. As a result, a semiconductor substrate in which a defect in an interface between the single crystal semiconductor layer and the insulating layer is reduced can be provided.
摘要翻译：通过以下步骤在具有绝缘表面的衬底上形成单晶半导体层：从单晶半导体衬底的表面形成在给定深度处的离子掺杂层; 对所述单晶半导体衬底的表面进行等离子体处理; 在进行等离子体处理的单晶半导体基板上形成绝缘层; 将单晶半导体衬底与绝缘表面的衬底接合在绝缘层之间; 以及使用离子掺杂层作为分离表面分离单晶半导体衬底。结果，可以提供其中单晶半导体层和绝缘层之间的界面的缺陷减小的半导体衬底。

4. 发明申请

US20090111236A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 失效
标题翻译：制造SOI衬底的方法
公开(公告)号：US20090111236A1
公开(公告)日：2009-04-30
申请号：US12259833
申请日：2008-10-28
申请人： Tetsuya Kakehata , Kazutaka Kuriki
发明人： Tetsuya Kakehata , Kazutaka Kuriki
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , Y10S438/977
摘要： An object is to reduce occurrence of defective bonding between a base substrate and a semiconductor substrate even when a silicon nitride film or the like is used as a bonding layer. Another object is to provide a method for manufacturing an SOI substrate by which an increase in the number of steps can be suppressed. A semiconductor substrate and a base substrate are prepared; an oxide film is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form a separation layer at a predetermined depth from a surface of the semiconductor substrate; a nitrogen-containing layer is formed over the oxide film after the ion irradiation; the semiconductor substrate and the base substrate are disposed opposite to each other to bond a surface of the nitrogen-containing layer and a surface of the base substrate to each other; and the semiconductor substrate is heated to cause separation along the separation layer, thereby forming a single crystal semiconductor layer over the base substrate with the oxide film and the nitrogen-containing layer interposed therebetween.
摘要翻译：即使在使用氮化硅膜等作为接合层的情况下，也可以减少基底基板与半导体基板之间的不良接合的发生。另一个目的是提供一种用于制造可以抑制步数增加的SOI衬底的方法。制备半导体衬底和基底衬底; 在半导体衬底上形成氧化膜; 半导体衬底通过氧化膜被加速离子照射，以在半导体衬底的表面的预定深度处形成分离层; 在离子照射之后在氧化膜上方形成含氮层; 半导体衬底和基底衬底彼此相对设置，以将氮含量层的表面和基底衬底的表面彼此粘合; 并且半导体衬底被加热以沿着分离层分离，从而在氧化膜和含氮层之间形成在基底衬底上的单晶半导体层。

5. 发明授权

US08207045B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US08207045B2
公开(公告)日：2012-06-26
申请号：US12692768
申请日：2010-01-25
申请人： Tetsuya Kakehata , Kazutaka Kuriki
发明人： Tetsuya Kakehata , Kazutaka Kuriki
IPC分类号： H01L21/302
CPC分类号： H01L21/76254 , Y10S438/977
摘要： An object is to reduce occurrence of defective bonding between a base substrate and a semiconductor substrate even when a silicon nitride film or the like is used as a bonding layer. Another object is to provide a method for manufacturing an SOI substrate by which an increase in the number of steps can be suppressed. A semiconductor substrate and a base substrate are prepared; an oxide film is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form a separation layer at a predetermined depth from a surface of the semiconductor substrate; a nitrogen-containing layer is formed over the oxide film after the ion irradiation; the semiconductor substrate and the base substrate are disposed opposite to each other to bond a surface of the nitrogen-containing layer and a surface of the base substrate to each other; and the semiconductor substrate is heated to cause separation along the separation layer, thereby forming a single crystal semiconductor layer over the base substrate with the oxide film and the nitrogen-containing layer interposed therebetween.
摘要翻译：即使在使用氮化硅膜等作为接合层的情况下，也可以减少基底基板与半导体基板之间的不良接合的发生。另一个目的是提供一种用于制造可以抑制步数增加的SOI衬底的方法。制备半导体衬底和基底衬底; 在半导体衬底上形成氧化膜; 半导体衬底通过氧化膜被加速离子照射，以在半导体衬底的表面的预定深度处形成分离层; 在离子照射之后在氧化膜上方形成含氮层; 半导体衬底和基底衬底彼此相对设置，以将氮含量层的表面和基底衬底的表面彼此粘合; 并且半导体衬底被加热以沿着分离层分离，从而在氧化膜和含氮层之间形成在基底衬底上的单晶半导体层。

6. 发明申请

US20080318394A1 Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and electronic device 失效
标题翻译：半导体衬底，半导体衬底的制造方法，半导体器件和电子器件
公开(公告)号：US20080318394A1
公开(公告)日：2008-12-25
申请号：US12213308
申请日：2008-06-18
申请人： Tetsuya Kakehata , Kazutaka Kuriki
发明人： Tetsuya Kakehata , Kazutaka Kuriki
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A single crystal semiconductor layer is formed over a substrate having an insulating surface by the following steps: forming an ion doped layer at a given depth from a surface of a single crystal semiconductor substrate; performing plasma treatment to the surface of the single crystal semiconductor substrate; forming an insulating layer on the single crystal semiconductor substrate to which the plasma treatment is performed; bonding the single crystal semiconductor substrate to the substrate having the insulating surface with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate using the ion doped layer as a separation surface. As a result, a semiconductor substrate in which a defect in an interface between the single crystal semiconductor layer and the insulating layer is reduced can be provided.
摘要翻译：通过以下步骤在具有绝缘表面的衬底上形成单晶半导体层：从单晶半导体衬底的表面形成在给定深度处的离子掺杂层; 对所述单晶半导体衬底的表面进行等离子体处理; 在进行等离子体处理的单晶半导体基板上形成绝缘层; 将单晶半导体衬底与绝缘表面的衬底接合在绝缘层之间; 以及使用离子掺杂层作为分离表面分离单晶半导体衬底。结果，可以提供其中单晶半导体层和绝缘层之间的界面的缺陷减小的半导体衬底。

7. 发明授权

US07875532B2 Substrate for manufacturing semiconductor device and manufacturing method thereof 有权
标题翻译：用于制造半导体器件的基板及其制造方法
公开(公告)号：US07875532B2
公开(公告)日：2011-01-25
申请号：US12155340
申请日：2008-06-03
申请人： Tetsuya Kakehata , Kazutaka Kuriki
发明人： Tetsuya Kakehata , Kazutaka Kuriki
IPC分类号： H01L21/46
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772 , H01L2924/0002 , H01L2924/00
摘要： A substrate with which a semiconductor device with excellent electric characteristics and high reliability can be manufactured is provided. An aspect of the invention is a method for manufacturing a substrate for manufacturing a semiconductor device: a first silicon oxide film, a silicon nitride film, and a second silicon oxide film are stacked in this order over a surface of a semiconductor substrate by a thermal CVD method, and then a weakened layer is formed at a given depth of the semiconductor substrate; the semiconductor substrate and a substrate having an insulating surface are arranged to face each other, and the second silicon oxide film provided for the semiconductor substrate and a supporting substrate are bonded to each other; and the semiconductor substrate is separated at the weakened layer by heat treatment, whereby a semiconductor film separated from the semiconductor substrate is left over the substrate having the insulating surface.
摘要翻译：提供了可以制造具有优异的电特性和高可靠性的半导体器件的衬底。本发明的一个方面是一种用于制造半导体器件制造用基板的方法：将第一氧化硅膜，氮化硅膜和第二氧化硅膜依次层叠在半导体基板的表面上， CVD法，然后在半导体衬底的给定深度处形成弱化层; 半导体衬底和具有绝缘表面的衬底被布置成彼此面对，并且设置用于半导体衬底和支撑衬底的第二氧化硅膜彼此接合; 并且通过热处理在弱化层处分离半导体衬底，由此将与半导体衬底分离的半导体膜留在具有绝缘表面的衬底上。

8. 发明授权

US08390067B2 Substrate for manufacturing semiconductor device and manufacturing method thereof 有权
标题翻译：用于制造半导体器件的基板及其制造方法
公开(公告)号：US08390067B2
公开(公告)日：2013-03-05
申请号：US13008241
申请日：2011-01-18
申请人： Tetsuya Kakehata , Kazutaka Kuriki
发明人： Tetsuya Kakehata , Kazutaka Kuriki
IPC分类号： H01L27/12
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772 , H01L2924/0002 , H01L2924/00
摘要： A substrate with which a semiconductor device with excellent electric characteristics and high reliability can be manufactured is provided. An aspect of the invention is a method for manufacturing a substrate for manufacturing a semiconductor device: a first silicon oxide film, a silicon nitride film, and a second silicon oxide film are stacked in this order over a surface of a semiconductor substrate by a thermal CVD method, and then a weakened layer is formed at a given depth of the semiconductor substrate; the semiconductor substrate and a substrate having an insulating surface are arranged to face each other, and the second silicon oxide film provided for the semiconductor substrate and a supporting substrate are bonded to each other; and the semiconductor substrate is separated at the weakened layer by heat treatment, whereby a semiconductor film separated from the semiconductor substrate is left over the substrate having the insulating surface.
摘要翻译：提供了可以制造具有优异的电特性和高可靠性的半导体器件的衬底。本发明的一个方面是一种用于制造半导体器件制造用基板的方法：将第一氧化硅膜，氮化硅膜和第二氧化硅膜依次层叠在半导体基板的表面上， CVD法，然后在半导体衬底的给定深度处形成弱化层; 半导体衬底和具有绝缘表面的衬底被布置成彼此面对，并且设置用于半导体衬底和支撑衬底的第二氧化硅膜彼此接合; 并且通过热处理在弱化层处分离半导体衬底，由此将与半导体衬底分离的半导体膜留在具有绝缘表面的衬底上。

9. 发明授权

US07696058B2 Method for manufacturing SOI substrate 失效
标题翻译：制造SOI衬底的方法
公开(公告)号：US07696058B2
公开(公告)日：2010-04-13
申请号：US12259833
申请日：2008-10-28
申请人： Tetsuya Kakehata , Kazutaka Kuriki
发明人： Tetsuya Kakehata , Kazutaka Kuriki
IPC分类号： H01L21/304
CPC分类号： H01L21/76254 , Y10S438/977
摘要： An object is to reduce occurrence of defective bonding between a base substrate and a semiconductor substrate even when a silicon nitride film or the like is used as a bonding layer. Another object is to provide a method for manufacturing an SOI substrate by which an increase in the number of steps can be suppressed. A semiconductor substrate and a base substrate are prepared; an oxide film is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form a separation layer at a predetermined depth from a surface of the semiconductor substrate; a nitrogen-containing layer is formed over the oxide film after the ion irradiation; the semiconductor substrate and the base substrate are disposed opposite to each other to bond a surface of the nitrogen-containing layer and a surface of the base substrate to each other; and the semiconductor substrate is heated to cause separation along the separation layer, thereby forming a single crystal semiconductor layer over the base substrate with the oxide film and the nitrogen-containing layer interposed therebetween.
摘要翻译：即使在使用氮化硅膜等作为接合层的情况下，也可以减少基底基板与半导体基板之间的不良接合的发生。另一个目的是提供一种用于制造可以抑制步数增加的SOI衬底的方法。制备半导体衬底和基底衬底; 在半导体衬底上形成氧化膜; 半导体衬底通过氧化膜被加速离子照射，以在半导体衬底的表面的预定深度处形成分离层; 在离子照射之后在氧化膜上方形成含氮层; 半导体衬底和基底衬底彼此相对设置，以将氮含量层的表面和基底衬底的表面彼此粘合; 并且半导体衬底被加热以沿着分离层分离，从而在氧化膜和含氮层之间形成在基底衬底上的单晶半导体层。

10. 发明申请

US20080308897A1 Substrate for manufacturing semiconductor device and manufacturing method thereof 有权
标题翻译：用于制造半导体器件的基板及其制造方法
公开(公告)号：US20080308897A1
公开(公告)日：2008-12-18
申请号：US12155340
申请日：2008-06-03
申请人： Tetsuya Kakehata , Kazutaka Kuriki
发明人： Tetsuya Kakehata , Kazutaka Kuriki
IPC分类号： H01L21/86 , H01L27/12
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772 , H01L2924/0002 , H01L2924/00
摘要： A substrate with which a semiconductor device with excellent electric characteristics and high reliability can be manufactured is provided. An aspect of the invention is a method for manufacturing a substrate for manufacturing a semiconductor device: a first silicon oxide film, a silicon nitride film, and a second silicon oxide film are stacked in this order over a surface of a semiconductor substrate by a thermal CVD method, and then a weakened layer is formed at a given depth of the semiconductor substrate; the semiconductor substrate and a substrate having an insulating surface are arranged to face each other, and the second silicon oxide film provided for the semiconductor substrate and a supporting substrate are bonded to each other; and the semiconductor substrate is separated at the weakened layer by heat treatment, whereby a semiconductor film separated from the semiconductor substrate is left over the substrate having the insulating surface.
摘要翻译：提供了可以制造具有优异的电特性和高可靠性的半导体器件的衬底。本发明的一个方面是一种用于制造半导体器件制造用基板的方法：将第一氧化硅膜，氮化硅膜和第二氧化硅膜依次层叠在半导体基板的表面上， CVD法，然后在半导体衬底的给定深度处形成弱化层; 半导体衬底和具有绝缘表面的衬底被布置成彼此面对，并且设置用于半导体衬底和支撑衬底的第二氧化硅膜彼此接合; 并且通过热处理在弱化层处分离半导体衬底，由此将与半导体衬底分离的半导体膜留在具有绝缘表面的衬底上。

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