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1. 发明授权

US08288215B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08288215B2
公开(公告)日：2012-10-16
申请号：US13069468
申请日：2011-03-23
申请人： Hideto Ohnuma , Noritsugu Nomura
发明人： Hideto Ohnuma , Noritsugu Nomura
IPC分类号： H01L21/336
CPC分类号： H01L21/76254 , H01L21/84 , H01L27/1233 , H01L29/78621
摘要： A single crystal semiconductor substrate including an embrittlement layer is attached to a base substrate with an insulating layer interposed therebetween, and the single crystal semiconductor layer is separated at the embrittlement layer by heat treatment; accordingly, a single crystal semiconductor layer is fixed over the base substrate. The single crystal semiconductor layer is irradiated with a laser beam so that the single crystal semiconductor layer is partially melted and then is re-single crystallized, whereby crystal defects are removed. In addition, an island-shaped single crystal semiconductor layer for forming an n-channel transistor is channel-doped using a photomask and then is etched back using the photomask so that the island-shaped single crystal semiconductor layer for forming an n-channel transistor is thinner than the island-shaped single crystal semiconductor layer for forming a p-channel transistor.
摘要翻译：将具有脆化层的单晶半导体基板安装在基板上，其间插入有绝缘层，并且通过热处理在脆化层处分离单晶半导体层; 因此，单晶半导体层固定在基底基板上。用激光束照射单晶半导体层，使得单晶半导体层部分熔融，然后重新单晶化，从而除去晶体缺陷。此外，用于形成n沟道晶体管的岛状单晶半导体层使用光掩模进行沟道掺杂，然后使用光掩模进行回蚀，从而形成用于形成n沟道晶体管的岛状单晶半导体层比用于形成p沟道晶体管的岛状单晶半导体层薄。

2. 发明授权

US07939389B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07939389B2
公开(公告)日：2011-05-10
申请号：US12420887
申请日：2009-04-09
申请人： Hideto Ohnuma , Noritsugu Nomura
发明人： Hideto Ohnuma , Noritsugu Nomura
IPC分类号： H01L21/336
CPC分类号： H01L21/76254 , H01L21/84 , H01L27/1233 , H01L29/78621
摘要： A single crystal semiconductor substrate including an embrittlement layer is attached to a base substrate with an insulating layer interposed therebetween, and the single crystal semiconductor layer is separated at the embrittlement layer by heat treatment; accordingly, a single crystal semiconductor layer is fixed over the base substrate. The single crystal semiconductor layer is irradiated with a laser beam so that the single crystal semiconductor layer is partially melted and then is re-single crystallized, whereby crystal defects are removed. In addition, an island-shaped single crystal semiconductor layer for forming an n-channel transistor is channel-doped using a photomask and then is etched back using the photomask so that the island-shaped single crystal semiconductor layer for forming an n-channel transistor is thinner than the island-shaped single crystal semiconductor layer for forming a p-channel transistor.
摘要翻译：将具有脆化层的单晶半导体基板安装在基板上，其间插入有绝缘层，并且通过热处理在脆化层处分离单晶半导体层; 因此，单晶半导体层固定在基底基板上。用激光束照射单晶半导体层，使得单晶半导体层部分熔融，然后重新单晶化，从而除去晶体缺陷。此外，用于形成n沟道晶体管的岛状单晶半导体层使用光掩模进行沟道掺杂，然后使用光掩模进行回蚀，从而形成用于形成n沟道晶体管的岛状单晶半导体层比用于形成p沟道晶体管的岛状单晶半导体层薄。

3. 发明申请

US20140199823A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20140199823A1
公开(公告)日：2014-07-17
申请号：US14110690
申请日：2011-06-10
申请人： Noritsugu Nomura , Akira Okada , Tatsuo Harada
发明人： Noritsugu Nomura , Akira Okada , Tatsuo Harada
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/26506 , H01L21/84
摘要： An SOT substrate (6), in which a silicon layer (5) is provided on a silicon substrate (3) via a silicon oxide film (4), is formed. Next, a plurality of semiconductor elements (8) is formed on a surface of the silicon layer (5). Next, wiring (11) is formed on a surface of an insulating substrate (10). Next, the SOI substrate (6) and the insulating substrate (10) are pasted together so that the plurality of semiconductor elements (8) and the wiring (11) are electrically connected together. Next, at least one of hydrogen ions and rare gas ions are injected into the silicon substrate (3) to form a brittle layer (12). Next, part of the silicon substrate (3) is peeled away from the brittle layer (12) as a boundary.
摘要翻译：形成硅基板（3）上的氧化硅膜（4）的硅层（5）的SOT基板（6）。接下来，在硅层（5）的表面上形成多个半导体元件（8）。接下来，在绝缘基板（10）的表面上形成布线（11）。接下来，将SOI衬底（6）和绝缘衬底（10）粘贴在一起，使得多个半导体元件（8）和布线（11）电连接在一起。接下来，将氢离子和稀有气体离子中的至少一种注入到硅衬底（3）中以形成脆性层（12）。接下来，将硅基板（3）的一部分作为边界从脆性层（12）剥离。

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