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1. 发明授权

US07247899B2 Semiconductor device, photoelectric conversion device and method of manufacturing same 有权
标题翻译：半导体器件，光电转换器件及其制造方法
公开(公告)号：US07247899B2
公开(公告)日：2007-07-24
申请号：US10937382
申请日：2004-09-10
申请人： Hideshi Kuwabara , Hiroshi Yuzurihara , Takayuki Kimura , Mahito Shinohara
发明人： Hideshi Kuwabara , Hiroshi Yuzurihara , Takayuki Kimura , Mahito Shinohara
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14687 , H01L27/1463 , H01L27/14632
摘要： In a photoelectric conversion device having a buried layer in a part of an anode and a cathode of a photodiode, such as a CCD having a sensor structure and a CMOS sensor, well of the same conduction type as the conduction type of the buried layer can be disposed in a peripheral circuit and the potential of each well is independently controlled.In a photoelectric conversion device which is constructed in such a manner that on the whole area of a substrate of a specific conduction type there are disposed a buried layer of a conduction type opposite to the conduction type of the substrate and an epitaxial layer of the same conduction type as the conduction type of the substrate and that well of a conduction type opposite to the conduction type of the substrate are present in a part of the epitaxial layer, buried layer for well isolation of the same conduction type as the conduction type of the substrate which have a higher concentration than the epitaxial layer is disposed between the lower part of the well and the buried layer.
摘要翻译：在具有在阳极的一部分中的掩埋层和具有传感器结构的CCD的诸如CCD的CMOS光电二极管的光电转换装置中，与掩埋层的导电类型相同的导电类型设置在外围电路中，并且每个阱的电位被独立地控制。在以这样的方式构成的光电转换装置中，在特定导电类型的基板的整个区域上设置有与基板的导电类型相反的导电类型的掩埋层和与其相同的外延层导电类型作为衬底的导电类型，并且与衬底的导电类型相反的导电类型的阱存在于外延层的一部分中，用于良好隔离导电类型的导电类型的掩埋层具有比外延层更高的浓度的衬底设置在阱的下部和掩埋层之间。

2. 发明申请

US20050056905A1 Semiconductor device, photoelectric conversion device and method of manufacturing same 有权
标题翻译：半导体器件，光电转换器件及其制造方法
公开(公告)号：US20050056905A1
公开(公告)日：2005-03-17
申请号：US10937382
申请日：2004-09-10
申请人： Hideshi Kuwabara , Hiroshi Yuzurihara , Takayuki Kimura , Mahito Shinohara
发明人： Hideshi Kuwabara , Hiroshi Yuzurihara , Takayuki Kimura , Mahito Shinohara
IPC分类号： H01L27/146 , H01L29/732 , H01L31/10
CPC分类号： H01L27/14687 , H01L27/1463 , H01L27/14632
摘要： In a photoelectric conversion device having a buried layer in a part of an anode and a cathode of a photodiode, such as a CCD having a sensor structure and a CMOS sensor, well of the same conduction type as the conduction type of the buried layer can be disposed in a peripheral circuit and the potential of each well is independently controlled. In a photoelectric conversion device which is constructed in such a manner that on the whole area of a substrate of a specific conduction type there are disposed a buried layer of a conduction type opposite to the conduction type of the substrate and an epitaxial layer of the same conduction type as the conduction type of the substrate and that well of a conduction type opposite to the conduction type of the substrate are present in a part of the epitaxial layer, buried layer for well isolation of the same conduction type as the conduction type of the substrate which have a higher concentration than the epitaxial layer is disposed between the lower part of the well and the buried layer.
摘要翻译：在具有在阳极的一部分中的掩埋层和具有传感器结构的CCD的诸如CCD的CMOS光电二极管的光电转换装置中，与掩埋层的导电类型相同的导电类型设置在外围电路中，并且每个阱的电位被独立地控制。在以这样的方式构成的光电转换装置中，在特定导电类型的基板的整个区域上设置有与基板的导电类型相反的导电类型的掩埋层和与其相同的外延层导电类型作为衬底的导电类型，并且与衬底的导电类型相反的导电类型的阱存在于外延层的一部分中，用于良好隔离导电类型的导电类型的掩埋层具有比外延层更高的浓度的衬底设置在阱的下部和掩埋层之间。

3. 发明授权

US08817144B2 Photoelectric conversion apparatus 有权
标题翻译：光电转换装置
公开(公告)号：US08817144B2
公开(公告)日：2014-08-26
申请号：US13365146
申请日：2012-02-02
申请人： Taro Kato , Mineo Shimotsusa , Hiroaki Sano , Takeshi Ichikawa , Yasuhiro Sekine , Mahito Shinohara , Genzo Momma
发明人： Taro Kato , Mineo Shimotsusa , Hiroaki Sano , Takeshi Ichikawa , Yasuhiro Sekine , Mahito Shinohara , Genzo Momma
IPC分类号： H01L21/00
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14629 , H01L27/1463
摘要： A photoelectric conversion apparatus includes a semiconductor substrate having a photoelectric conversion portion. An insulator is provided on the semiconductor substrate. The insulator has a hole corresponding to the photoelectric conversion portion. A waveguide member is provided in the hole. An in-layer lens is provided on a side of the waveguide member farther from the semiconductor substrate. A first intermediate member is provided between the waveguide member and the in-layer lens. The first intermediate member has a lower refractive index than the in-layer lens.
摘要翻译：光电转换装置包括具有光电转换部分的半导体衬底。绝缘体设置在半导体衬底上。绝缘体具有与光电转换部对应的孔。波导构件设置在孔中。在距离半导体衬底更远的波导构件的一侧设置有层内透镜。第一中间构件设置在波导构件和内层透镜之间。第一中间构件具有比层内透镜低的折射率。

4. 发明授权

US08436406B2 Solid-state image sensing device and camera system using the same 有权
标题翻译：固态摄像装置和相机系统采用相同的方式
公开(公告)号：US08436406B2
公开(公告)日：2013-05-07
申请号：US12727469
申请日：2010-03-19
申请人： Mahito Shinohara , Shunsuke Inoue
发明人： Mahito Shinohara , Shunsuke Inoue
IPC分类号： H01L31/062
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14632 , H01L27/14643 , H01L27/14654 , H01L27/14656
摘要： A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first and second conductivity types are opposite to each other. The first transistor has a first-conductivity-type drain region formed in the second-conductivity-type semiconductor region to transfer signal charge to the drain region. The second transistor has a source region and a drain region which are formed in the second-conductivity-type semiconductor region and which have the first conductivity type. At least one second-conductivity-type potential barrier is provided under the drain region of the first transistor and the source region and/or the drain region of the second transistor.
摘要翻译：固态图像感测装置包括多个像素。每个像素具有光电二极管，第一晶体管和第二晶体管。光电二极管由第一导电型半导体区域和第二导电型半导体区域构成。第一和第二导电类型彼此相反。第一晶体管具有形成在第二导电型半导体区域中的第一导电型漏极区域，以将信号电荷转移到漏极区域。第二晶体管具有形成在第二导电型半导体区域中并且具有第一导电类型的源极区和漏极区。在第一晶体管的漏极区域和第二晶体管的源极区域和/或漏极区域的下方提供至少一个第二导电型势垒。

5. 发明授权

US08350942B2 Solid-state imaging apparatus and driving method therefor 有权
标题翻译：固态成像装置及其驱动方法
公开(公告)号：US08350942B2
公开(公告)日：2013-01-08
申请号：US12815538
申请日：2010-06-15
申请人： Mahito Shinohara
发明人： Mahito Shinohara
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/335 , H04N5/3594 , H04N5/361
摘要： A solid-state imaging apparatus includes a photoelectric conversion unit for generating and accumulating an electric charge according to an incident light, a floating diffusion for accumulating electric charges, a transfer transistor for transferring electric charges accumulated in the photoelectric conversion unit to the floating diffusion unit, and a reset transistor for resetting a voltage according to electric charges accumulated in the floating diffusion unit. In addition, a drive circuit intermittently applies to a gate of the transfer transistor a pulse having a first potential which is intermediate between a transfer potential for transferring electric charges and a non-transfer potential for disabling transfer of electric charges and applies to a gate of the reset transistor a second potential lower than the potential of the pulse for resetting voltage of the floating diffusion unit and higher than the first potential, during accumulation of electric charges in the photoelectric conversion unit.
摘要翻译：一种固态成像装置，包括：用于根据入射光产生和累积电荷的光电转换单元，用于累积电荷的浮动扩散;用于将积累在光电转换单元中的电荷转移到浮动扩散单元的转移晶体管以及复位晶体管，用于根据浮动扩散单元中累积的电荷来复位电压。此外，驱动电路间歇地向转移晶体管的栅极施加具有第一电位的脉冲，该第一电位介于用于传送电荷的转移电位之间的中间和用于禁止电荷转移的非转移电位，并施加到所述复位晶体管在所述光电转换单元中的电荷积累期间具有低于用于复位所述浮动扩散单元的电压并高于所述第一电位的脉冲的电位的第二电位。

6. 发明授权

US08345137B2 Solid-state image pickup apparatus and camera with two-dimensional power supply wiring 有权
标题翻译：固态摄像装置和具有二维电源接线的摄像机
公开(公告)号：US08345137B2
公开(公告)日：2013-01-01
申请号：US12671043
申请日：2009-02-26
申请人： Mahito Shinohara , Masaaki Iwane , Yukihiro Kuroda
发明人： Mahito Shinohara , Masaaki Iwane , Yukihiro Kuroda
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H01L27/14603 , H01L27/14641
摘要： A solid-state image pickup apparatus includes a pixel area in which pixels each having at least a photoelectric conversion unit and an amplification transistor for amplifying and outputting a signal of the photoelectric conversion unit are two-dimensionally arranged in horizontal and vertical directions, wherein a power supply wiring, which extends in a vertical direction along pixel boundaries of horizontal and vertical directions while meandering, is arranged on one of two pixel lines adjoining to each other in the horizontal direction in the pixel area, and the power supply wiring is connected to one of a source and a drain of the amplification transistor on each of the two pixel lines. Thus, it is possible to provide a high-sensitivity and high-image-quality amplified solid-state image pickup apparatus in which a difference of sensitivities at one-line intervals is small.
摘要翻译：固体摄像装置包括其中至少具有光电转换单元的像素和用于放大和输出光电转换单元的信号的放大晶体管的像素区域在水平和垂直方向上二维排列的像素区域，其中，沿着水平方向和垂直方向的像素边界沿着垂直方向延伸的电源布线，同时蜿蜒地布置在像素区域中在水平方向上彼此相邻的两个像素线之一，并且电源布线连接到两个像素线中的每一个上的放大晶体管的源极和漏极之一。因此，可以提供其中一行间隔的灵敏度差小的高灵敏度和高图像质量的放大固态图像拾取装置。

7. 发明申请

US20120196429A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120196429A1
公开(公告)日：2012-08-02
申请号：US13349062
申请日：2012-01-12
申请人： Tomoyuki Tezuka , Mahito Shinohara , Yasuhiro Kawabata
发明人： Tomoyuki Tezuka , Mahito Shinohara , Yasuhiro Kawabata
IPC分类号： H01L21/266
CPC分类号： H01L27/14643 , H01L21/2652 , H01L21/266 , H01L27/14689 , H01L29/78
摘要： A method of manufacturing a semiconductor device that includes a semiconductor substrate is provided. The method includes: exposing a photoresist coated on the semiconductor substrate using a photomask including a plurality of regions having different light transmittances; developing the photoresist to form a resist pattern including a plurality of regions having different thicknesses that depend on an exposure amount of the photoresist; and implanting impurity ions into the semiconductor substrate through the plurality of regions of the resist pattern having different thicknesses to form a plurality of impurity regions whose depths from a surface of the semiconductor substrate to peak positions are different from each other. The depths to the peak positions depend on the thickness of the resist pattern through which the implanted impurity ions pass.
摘要翻译：提供一种制造包括半导体衬底的半导体器件的方法。该方法包括：使用包括具有不同光透射率的多个区域的光掩模曝光涂覆在半导体衬底上的光致抗蚀剂; 显影光致抗蚀剂以形成包括取决于光致抗蚀剂的曝光量的具有不同厚度的多个区域的抗蚀剂图案; 以及通过具有不同厚度的抗蚀剂图案的多个区域将杂质离子注入到半导体衬底中，以形成从半导体衬底的表面到峰值位置的深度彼此不同的多个杂质区域。峰位置的深度取决于注入的杂质离子通过的抗蚀剂图案的厚度。

8. 发明授权

US08183604B2 Solid state image pickup device inducing an amplifying MOS transistor having particular conductivity type semiconductor layers, and camera using the same device 有权
标题翻译：感应具有特定导电类型半导体层的放大MOS晶体管的固态图像拾取器件，以及使用相同器件的相机
公开(公告)号：US08183604B2
公开(公告)日：2012-05-22
申请号：US11832329
申请日：2007-08-01
申请人： Mahito Shinohara
发明人： Mahito Shinohara
IPC分类号： H01L31/062
CPC分类号： H01L27/1463 , H01L27/14609
摘要： To provide an amplification type solid state image pickup device enabling lower noise, higher gain, and higher sensitivity than any conventional amplification type solid state image pickup device. A solid state image pickup device according to the present invention includes an arrangement of a plurality of unit pixels each of which includes at least: a photodiode for accumulating a signal charge generated by an incident light; and an amplifying MOS transistor receiving the signal charge at a control electrode, amplifying the signal charge and outputting an amplified signal, wherein: the amplifying MOS transistor is formed in a first semiconductor layer of a first conductivity type which is the same conductivity type as source and drain of the amplifying MOS transistor, the first semiconductor layer has an impurity concentration lower than that of the source and drain, and the first semiconductor layer is depleted between the source and drain at least during an amplifying operation of the amplifying MOS transistor.
摘要翻译：提供一种放大型固态摄像装置，能够实现比任何常规放大型固态摄像装置更低的噪声，更高的增益和更高的灵敏度。根据本发明的固态图像拾取装置包括多个单位像素的布置，每个单元像素至少包括：用于累积由入射光产生的信号电荷的光电二极管; 以及放大MOS晶体管，其在控制电极处接收信号电荷，放大信号电荷并输出放大信号，其中：所述放大MOS晶体管形成在与源极相同的导电类型的第一导电类型的第一半导体层中和放电MOS晶体管的漏极，第一半导体层的杂质浓度低于源极和漏极的杂质浓度，并且至少在放大MOS晶体管的放大操作期间第一半导体层在源极和漏极之间耗尽。

9. 发明授权

US08173476B2 Image pickup device and image pickup system 有权
公开(公告)号：US08173476B2
公开(公告)日：2012-05-08
申请号：US12481008
申请日：2009-06-09
申请人： Takanori Watanabe , Tetsuya Itano , Mahito Shinohara
发明人： Takanori Watanabe , Tetsuya Itano , Mahito Shinohara
IPC分类号： H04N5/335
CPC分类号： H04N5/3598 , H04N5/3595 , H04N5/374
摘要： There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.

10. 发明申请

US20100321518A1 SOLID-STATE IMAGE PICKUP DEVICE, IMAGE PICKUP SYSTEM INCLUDING THE SAME, AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：固态图像拾取装置，包括其的图像拾取系统及其制造方法
公开(公告)号：US20100321518A1
公开(公告)日：2010-12-23
申请号：US12815236
申请日：2010-06-14
申请人： Mahito Shinohara
发明人： Mahito Shinohara
IPC分类号： H04N5/228 , H01L31/14 , H01L31/18
CPC分类号： H01L27/1463 , H01L27/14621 , H01L27/14632 , H01L27/14643 , H01L27/14685 , H01L27/14689
摘要： A solid-state image pickup device including a photoelectric conversion element, a floating diffusion, and an element isolation region that are disposed above a first semiconductor region has a second semiconductor region of a first conductivity type disposed on the first semiconductor region. An interface between the first semiconductor region and a portion of the second semiconductor region corresponding to the photoelectric conversion element is located at a first depth, whereas the interface between the first semiconductor region and a portion of the second semiconductor region disposed under the element isolation region and the floating diffusion is located at a second depth smaller than the first depth.
摘要翻译：包括设置在第一半导体区域上方的光电转换元件，浮动扩散部和元件隔离区的固态图像拾取器件具有布置在第一半导体区域上的第一导电类型的第二半导体区域。第一半导体区域和对应于光电转换元件的第二半导体区域的一部分之间的界面位于第一深度处，而第一半导体区域与设置在元件隔离区域下方的第二半导体区域的一部分之间的界面并且浮动扩散部位于比第一深度小的第二深度。

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