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1. 发明授权

US4900079A Control system for vehicle equipment 失效
标题翻译：车辆设备控制系统
公开(公告)号：US4900079A
公开(公告)日：1990-02-13
申请号：US186253
申请日：1988-04-26
申请人： Hideo Obara , Akira Kimitsuka , Takayuki Yanagishima
发明人： Hideo Obara , Akira Kimitsuka , Takayuki Yanagishima
IPC分类号： B60R16/02 , B60N2/02 , B60N2/06 , B60N2/08 , B60N2/12 , B60N2/18 , B60N2/22 , B60N2/90 , B62D1/18
CPC分类号： B60N2/12
摘要： A system which automatically moves a drivers seat between one of a plurality of preselected driving positions and a position wherein ingress and egress is facilitated is inhibited when a passenger is seated on the seat behind the drivers one.
摘要翻译：当乘客坐在驾驶员后面的座椅上时，可以抑制在多个预选驾驶位置中的一个之间自动移动驾驶员座椅和便于出入口的位置的系统。

2. 发明授权

US07115471B2 Method of manufacturing semiconductor device including nonvolatile memory 失效
标题翻译：包括非易失性存储器的半导体器件的制造方法
公开(公告)号：US07115471B2
公开(公告)日：2006-10-03
申请号：US10961084
申请日：2004-10-12
申请人： Kazuyoshi Shinada , Akira Kimitsuka
发明人： Kazuyoshi Shinada , Akira Kimitsuka
IPC分类号： H01L21/336
CPC分类号： H01L27/11521 , H01L27/115 , H01L27/11524
摘要： There is provided a method of manufacturing a semiconductor device including a nonvolatile memory including forming an element isolation area surrounding an element area in a semiconductor substrate doped with a first type conductive impurity, forming a gate insulating film on the element area, forming selectively a cap film on the gate insulating film, burying selectively with a mask film surrounding the cap film on the gate insulating film, forming a tunnel window by removing selectively the cap film, forming an impurity diffusion layer in a surface region of the semiconductor substrate underneath the gate insulating film by introducing a second type conductive impurity using the mask film as a mask, removing the gate insulating film in the tunnel window, forming a tunnel insulating film in the tunnel window, forming a floating gate electrode film, an inter-gate electrode film, and a control gate electrode film on the tunnel insulating film, and forming a source-drain in the semiconductor substrate to interpose a surface region of the semiconductor substrate beneath the control gate electrode film by introducing the second type conductive impurity into the surface region using the control gate electrode film as a mask.
摘要翻译：提供一种制造包括非易失性存储器的半导体器件的方法，包括在掺杂有第一类型导电杂质的半导体衬底中形成围绕元件区域的元件隔离区域，在元件区域上形成栅极绝缘膜，选择性地形成帽在栅极绝缘膜上形成膜，在栅极绝缘膜上选择性地掩盖围绕盖膜的掩模膜，通过选择性地去除盖膜形成隧道窗，在栅极下方的半导体衬底的表面区域中形成杂质扩散层通过使用掩模膜作为掩模引入第二类导电杂质的绝缘膜，去除隧道窗中的栅极绝缘膜，在隧道窗中形成隧道绝缘膜，形成浮栅电极膜，栅极间电极膜，以及在隧道绝缘膜上的控制栅电极膜，并在半沟形成源极漏极通过使用控制栅电极膜作为掩模将第二类导电杂质引入到表面区域中，将半导体衬底的表面区域设置在控制栅电极膜的下方。

3. 发明申请

US20050136597A1 Method of manufacturing semiconductor device including nonvolatile memory 失效
标题翻译：包括非易失性存储器的半导体器件的制造方法
公开(公告)号：US20050136597A1
公开(公告)日：2005-06-23
申请号：US10961084
申请日：2004-10-12
申请人： Kazuyoshi Shinada , Akira Kimitsuka
发明人： Kazuyoshi Shinada , Akira Kimitsuka
IPC分类号： H01L21/8247 , H01L21/336 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L27/115 , H01L27/11524
摘要： There is provided a method of manufacturing a semiconductor device including a nonvolatile memory including forming an element isolation area surrounding an element area in a semiconductor substrate doped with a first type conductive impurity, forming a gate insulating film on the element area, forming selectively a cap film on the gate insulating film, burying selectively with a mask film surrounding the cap film on the gate insulating film, forming a tunnel window by removing selectively the cap film, forming an impurity diffusion layer in a surface region of the semiconductor substrate underneath the gate insulating film by introducing a second type conductive impurity using the mask film as a mask, removing the gate insulating film in the tunnel window, forming a tunnel insulating film in the tunnel window, forming a floating gate electrode film, an inter-gate electrode film, and a control gate electrode film on the tunnel insulating film, and forming a source-drain in the semiconductor substrate to interpose a surface region of the semiconductor substrate beneath the control gate electrode film by introducing the second type conductive impurity into the surface region using the control gate electrode film as a mask.
摘要翻译：提供一种制造包括非易失性存储器的半导体器件的方法，包括在掺杂有第一类型导电杂质的半导体衬底中形成围绕元件区域的元件隔离区域，在元件区域上形成栅极绝缘膜，选择性地形成帽在栅极绝缘膜上形成膜，在栅极绝缘膜上选择性地掩盖围绕盖膜的掩模膜，通过选择性地去除盖膜形成隧道窗，在栅极下方的半导体衬底的表面区域中形成杂质扩散层通过使用掩模膜作为掩模引入第二类导电杂质的绝缘膜，去除隧道窗中的栅极绝缘膜，在隧道窗中形成隧道绝缘膜，形成浮栅电极膜，栅极间电极膜，以及在隧道绝缘膜上的控制栅电极膜，并在半沟形成源极漏极通过使用控制栅电极膜作为掩模将第二类导电杂质引入到表面区域中，将半导体衬底的表面区域设置在控制栅电极膜的下方。

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