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    • 10. 发明授权
    • Semiconductor device and method for manufacturing the same
    • 半导体装置及其制造方法
    • US08338904B2
    • 2012-12-25
    • US12883674
    • 2010-09-16
    • Kazumasa TanidaChiaki TakuboHideo NumataYoshihisa Imori
    • Kazumasa TanidaChiaki TakuboHideo NumataYoshihisa Imori
    • H01L31/05
    • H01L27/14603H01L27/1463H01L27/1464H01L27/14683
    • According to an embodiment, there is provided a semiconductor device including a semiconductor substrate having a first surface on which an active layer having a light receiving portion is provided and a second surface to be a light receiving surface for the light receiving portion, a wiring layer provided on the active layer, an insulating layer provided to cover the wiring layer, and a supporting substrate joined to the semiconductor substrate via the insulating layer to face the first surface of the semiconductor substrate. A joined body of the semiconductor substrate and the supporting substrate includes an intercalated portion provided between its outer peripheral surface and the active surface. The intercalated portion is provided to penetrate the semiconductor substrate and the insulating layer from the second surface of the semiconductor substrate and to reach inside the supporting substrate.
    • 根据实施例,提供了一种半导体器件,其包括具有第一表面的半导体衬底,在该第一表面上设置有具有光接收部分的有源层和作为光接收部分的光接收表面的第二表面,布线层 设置在有源层上,设置为覆盖布线层的绝缘层,以及经由绝缘层与半导体基板接合以与半导体基板的第一表面相对的支撑基板。 半导体衬底和支撑衬底的接合体包括设置在其外周表面和活性表面之间的插入部分。 插入部分被设置为从半导体衬底的第二表面穿透半导体衬底和绝缘层并到达支撑衬底内部。