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1. 发明授权

US08193564B2 Silicon carbide semiconductor device including deep layer 有权
标题翻译：碳化硅半导体器件包括深层
公开(公告)号：US08193564B2
公开(公告)日：2012-06-05
申请号：US12379076
申请日：2009-02-12
申请人： Naohiro Suzuki , Eiichi Okuno , Hideo Matsuki
发明人： Naohiro Suzuki , Eiichi Okuno , Hideo Matsuki
IPC分类号： H01L29/71
CPC分类号： H01L29/7813 , H01L29/0615 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/0638 , H01L29/0661 , H01L29/0847 , H01L29/086 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/7811 , H01L29/7828
摘要： A silicon carbide semiconductor device includes a substrate, a drift layer located on a first surface of the substrate, a base region located on the drift layer, a source region located on the base region, a trench penetrating the source region and the base region to the drift layer, a channel layer located in the trench, a gate insulating layer located on the channel layer, a gate electrode located on the gate insulating layer, a source electrode electrically coupled with the source region and the base region, a drain electrode located on a second surface of the substrate, and a deep layer. The deep layer is located under the base region, extends to a depth deeper than the trench and is formed along an approximately normal direction to a sidewall of the trench.
摘要翻译：碳化硅半导体器件包括衬底，位于衬底的第一表面上的漂移层，位于漂移层上的基极区域，位于基极区域上的源极区域，穿透源极区域和基极区域的沟槽漂移层，位于沟槽中的沟道层，位于沟道层上的栅极绝缘层，位于栅极绝缘层上的栅电极，与源区和基极区电耦合的源电极，位于在衬底的第二表面上和深层。深层位于基底区域下方，延伸到比沟槽更深的深度，并且沿着大致正常的方向形成在沟槽的侧壁上。

2. 发明申请

US20090200559A1 Silicon carbide semiconductor device including deep layer 有权
标题翻译：碳化硅半导体器件包括深层
公开(公告)号：US20090200559A1
公开(公告)日：2009-08-13
申请号：US12379076
申请日：2009-02-12
申请人： Naohiro Suzuki , Eiichi Okuno , Hideo Matsuki
发明人： Naohiro Suzuki , Eiichi Okuno , Hideo Matsuki
IPC分类号： H01L29/15
CPC分类号： H01L29/7813 , H01L29/0615 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/0638 , H01L29/0661 , H01L29/0847 , H01L29/086 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/7811 , H01L29/7828
摘要： A silicon carbide semiconductor device includes a substrate, a drift layer located on a first surface of the substrate, a base region located on the drift layer, a source region located on the base region, a trench penetrating the source region and the base region to the drift layer, a channel layer located in the trench, a gate insulating layer located on the channel layer, a gate electrode located on the gate insulating layer, a source electrode electrically coupled with the source region and the base region, a drain electrode located on a second surface of the substrate, and a deep layer. The deep layer is located under the base region, extends to a depth deeper than the trench and is formed along an approximately normal direction to a sidewall of the trench.
摘要翻译：碳化硅半导体器件包括衬底，位于衬底的第一表面上的漂移层，位于漂移层上的基极区域，位于基极区域上的源极区域，穿透源极区域和基极区域的沟槽漂移层，位于沟槽中的沟道层，位于沟道层上的栅极绝缘层，位于栅极绝缘层上的栅电极，与源区和基极区电耦合的源电极，位于在衬底的第二表面上和深层。深层位于基底区域下方，延伸到比沟槽更深的深度，并且沿着大致正常的方向形成在沟槽的侧壁上。

3. 发明授权

US07855412B2 Silicon carbide semiconductor device and method of manufacturing the same 有权
标题翻译：碳化硅半导体器件及其制造方法
公开(公告)号：US07855412B2
公开(公告)日：2010-12-21
申请号：US12453520
申请日：2009-05-14
申请人： Hideo Matsuki , Eiichi Okuno , Naohiro Suzuki
发明人： Hideo Matsuki , Eiichi Okuno , Naohiro Suzuki
IPC分类号： H01L27/108 , H01L29/76
CPC分类号： H01L21/0465 , H01L21/0475 , H01L29/1608 , H01L29/66068
摘要： An SiC semiconductor device includes a substrate, a drift layer disposed on a first surface of the substrate, a base region disposed above the drift layer, a source region disposed above the base region, a trench penetrating the source region and the base region to the drift layer, a gate insulating layer disposed on a surface of the trench, a gate electrode disposed on a surface of the gate insulating layer, a first electrode electrically coupled with the source region and the base region, a second electrode disposed on the second surface of the substrate, and a second conductivity-type layer disposed at a portion of the base region located under the source region. The second conductivity-type layer has the second conductivity type and has an impurity concentration higher than the base region.
摘要翻译： SiC半导体器件包括衬底，设置在衬底的第一表面上的漂移层，设置在漂移层上方的基极区域，设置在基极区域上方的源极区域，穿透源极区域和基极区域的沟槽漂移层，设置在沟槽表面上的栅极绝缘层，设置在栅极绝缘层的表面上的栅极电极，与源极区域和基极区域电耦合的第一电极，设置在第二表面上的第二电极以及设置在位于源极区域下方的基极区域的一部分的第二导电型层。第二导电型层具有第二导电类型并且具有高于基极区的杂质浓度。

4. 发明申请

US20090289264A1 Silicon carbide semiconductor device and method of manufacturing the same 有权
标题翻译：碳化硅半导体器件及其制造方法
公开(公告)号：US20090289264A1
公开(公告)日：2009-11-26
申请号：US12453520
申请日：2009-05-14
申请人： Hideo Matsuki , Eiichi Okuno , Naohiro Suzuki
发明人： Hideo Matsuki , Eiichi Okuno , Naohiro Suzuki
IPC分类号： H01L29/161 , H01L21/04 , H01L21/336 , H01L29/78
CPC分类号： H01L21/0465 , H01L21/0475 , H01L29/1608 , H01L29/66068
摘要： An SiC semiconductor device includes a substrate, a drift layer disposed on a first surface of the substrate, a base region disposed above the drift layer, a source region disposed above the base region, a trench penetrating the source region and the base region to the drift layer, a gate insulating layer disposed on a surface of the trench, a gate electrode disposed on a surface of the gate insulating layer, a first electrode electrically coupled with the source region and the base region, a second electrode disposed on the second surface of the substrate, and a second conductivity-type layer disposed at a portion of the base region located under the source region. The second conductivity-type layer has the second conductivity type and has an impurity concentration higher than the base region.
摘要翻译： SiC半导体器件包括衬底，设置在衬底的第一表面上的漂移层，设置在漂移层上方的基极区域，设置在基极区域上方的源极区域，穿透源极区域和基极区域的沟槽漂移层，设置在沟槽表面上的栅极绝缘层，设置在栅极绝缘层的表面上的栅极电极，与源极区域和基极区域电耦合的第一电极，设置在第二表面上的第二电极以及设置在位于源极区域下方的基极区域的一部分的第二导电型层。第二导电型层具有第二导电类型并且具有高于基极区的杂质浓度。

5. 发明授权

US07365363B2 Silicon carbide semiconductor device and method for manufacturing the same 有权
标题翻译：碳化硅半导体器件及其制造方法
公开(公告)号：US07365363B2
公开(公告)日：2008-04-29
申请号：US11108906
申请日：2005-04-19
申请人： Jun Kojima , Takeshi Endo , Eiichi Okuno , Yoshihito Mitsuoka , Yoshiyuki Hisada , Hideo Matsuki
发明人： Jun Kojima , Takeshi Endo , Eiichi Okuno , Yoshihito Mitsuoka , Yoshiyuki Hisada , Hideo Matsuki
IPC分类号： H01L31/0312
CPC分类号： H01L29/66068 , H01L21/02024 , H01L29/045 , H01L29/513 , H01L29/517 , H01L29/7828
摘要： A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.
摘要翻译：碳化硅半导体器件包括：具有主表面和背面的半导体衬底; 设置在主表面上的漂移层; 设置在漂移层上的基极区域; 设置在所述基底区域上的源极区域; 设置在所述漂移层和所述基极区域两者上的表面沟道层，用于在所述源极区域和所述漂移层之间连接; 栅极绝缘膜，设置在所述表面沟道层上并且包括高介电常数膜; 设置在所述栅极绝缘膜上的栅电极; 源电极，其设置在所述源极区域上; 以及设置在所述背面上的背面电极。

6. 发明授权

US07968892B2 Silicon carbide semiconductor device 有权
标题翻译：碳化硅半导体器件
公开(公告)号：US07968892B2
公开(公告)日：2011-06-28
申请号：US11882137
申请日：2007-07-31
申请人： Jun Kojima , Takeshi Endo , Eiichi Okuno , Yoshihito Mitsuoka , Yoshiyuki Hisada , Hideo Matsuki
发明人： Jun Kojima , Takeshi Endo , Eiichi Okuno , Yoshihito Mitsuoka , Yoshiyuki Hisada , Hideo Matsuki
IPC分类号： H01L31/0256
CPC分类号： H01L29/66068 , H01L21/02024 , H01L29/045 , H01L29/513 , H01L29/517 , H01L29/7828
摘要： A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.
摘要翻译：碳化硅半导体器件包括：具有主表面和背面的半导体衬底; 设置在主表面上的漂移层; 设置在漂移层上的基极区域; 设置在所述基底区域上的源极区域; 设置在所述漂移层和所述基极区域两者上的表面沟道层，用于在所述源极区域和所述漂移层之间连接; 栅极绝缘膜，设置在所述表面沟道层上并且包括高介电常数膜; 设置在所述栅极绝缘膜上的栅电极; 源电极，其设置在所述源极区域上; 以及设置在所述背面上的背面电极。

7. 发明申请

US20070281173A1 Silicon carbide semiconductor device 有权
标题翻译：碳化硅半导体器件
公开(公告)号：US20070281173A1
公开(公告)日：2007-12-06
申请号：US11882137
申请日：2007-07-31
申请人： Jun Kojima , Takeshi Endo , Eiichi Okuno , Yoshihito Mitsuoka , Yoshiyuki Hisada , Hideo Matsuki
发明人： Jun Kojima , Takeshi Endo , Eiichi Okuno , Yoshihito Mitsuoka , Yoshiyuki Hisada , Hideo Matsuki
IPC分类号： B32B9/04
CPC分类号： H01L29/66068 , H01L21/02024 , H01L29/045 , H01L29/513 , H01L29/517 , H01L29/7828
摘要： A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.
摘要翻译：碳化硅半导体器件包括：具有主表面和背面的半导体衬底; 设置在主表面上的漂移层; 设置在漂移层上的基极区域; 设置在所述基底区域上的源极区域; 设置在所述漂移层和所述基极区域两者上的表面沟道层，用于在所述源极区域和所述漂移层之间连接; 栅极绝缘膜，设置在所述表面沟道层上并且包括高介电常数膜; 设置在所述栅极绝缘膜上的栅电极; 源电极，其设置在所述源极区域上; 以及设置在所述背面上的背面电极。

8. 发明申请

US20050230686A1 Silicon carbide semiconductor device and method for manufacturing the same 有权
标题翻译：碳化硅半导体器件及其制造方法
公开(公告)号：US20050230686A1
公开(公告)日：2005-10-20
申请号：US11108906
申请日：2005-04-19
申请人： Jun Kojima , Takeshi Endo , Eiichi Okuno , Yoshihito Mitsuoka , Yoshiyuki Hisada , Hideo Matsuki
发明人： Jun Kojima , Takeshi Endo , Eiichi Okuno , Yoshihito Mitsuoka , Yoshiyuki Hisada , Hideo Matsuki
IPC分类号： H01L21/04 , H01L21/336 , H01L29/04 , H01L29/15 , H01L29/24 , H01L29/51 , H01L29/78
CPC分类号： H01L29/66068 , H01L21/02024 , H01L29/045 , H01L29/513 , H01L29/517 , H01L29/7828
摘要： A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.
摘要翻译：碳化硅半导体器件包括：具有主表面和背面的半导体衬底; 设置在主表面上的漂移层; 设置在漂移层上的基极区域; 设置在所述基底区域上的源极区域; 设置在所述漂移层和所述基极区域两者上的表面沟道层，用于在所述源极区域和所述漂移层之间连接; 栅极绝缘膜，设置在所述表面沟道层上并且包括高介电常数膜; 设置在所述栅极绝缘膜上的栅电极; 源电极，其设置在所述源极区域上; 以及设置在所述背面上的背面电极。

9. 发明授权

US07745276B2 Method for manufacturing SiC semiconductor device 有权
标题翻译： SiC半导体器件的制造方法
公开(公告)号：US07745276B2
公开(公告)日：2010-06-29
申请号：US12068263
申请日：2008-02-05
申请人： Eiichi Okuno , Hiroki Nakamura , Naohiro Suzuki
发明人： Eiichi Okuno , Hiroki Nakamura , Naohiro Suzuki
IPC分类号： H01L21/8234
CPC分类号： H01L29/7828 , H01L29/045 , H01L29/0615 , H01L29/0619 , H01L29/0657 , H01L29/1608 , H01L29/45 , H01L29/66068 , H01L29/7802 , H01L29/7811 , H01L29/7813
摘要： A method for manufacturing a SiC semiconductor device includes: preparing a SiC substrate having a (11-20)-orientation surface; forming a drift layer on the substrate; forming a base region in the drift layer; forming a first conductivity type region in the base region; forming a channel region on the base region to couple between the drift layer and the first conductivity type region; forming a gate insulating film on the channel region; forming a gate electrode on the gate insulating film; forming a first electrode to electrically connect to the first conductivity type region; and forming a second electrode on a backside of the substrate. The device controls current between the first and second electrodes by controlling the channel region. The forming the base region includes epitaxially forming a lower part of the base region on the drift layer.
摘要翻译：一种制造SiC半导体器件的方法包括：制备具有（11-20）取向表面的SiC衬底; 在衬底上形成漂移层; 在漂移层中形成基极区; 在所述基底区域中形成第一导电类型区域; 在所述基极区上形成沟道区，以在所述漂移层和所述第一导电类型区之间耦合; 在沟道区上形成栅极绝缘膜; 在栅极绝缘膜上形成栅电极; 形成电连接到所述第一导电类型区域的第一电极; 以及在所述衬底的背面上形成第二电极。该器件通过控制沟道区域来控制第一和第二电极之间的电流。形成基极区域包括外延地形成漂移层上的基极区域的下部。

10. 发明申请

US20090166730A1 SiC semiconductor device having bottom layer and method for manufacturing the same 有权
标题翻译：具有底层的SiC半导体器件及其制造方法
公开(公告)号：US20090166730A1
公开(公告)日：2009-07-02
申请号：US12318183
申请日：2008-12-23
申请人： Eiichi Okuno , Naohiro Suzuki , Nobuyuki Kato
发明人： Eiichi Okuno , Naohiro Suzuki , Nobuyuki Kato
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/0623 , H01L29/1608 , H01L29/66068
摘要： A SiC semiconductor device includes: a substrate; a drift layer on the substrate; a trench on the drift layer; a base region in the drift layer sandwiching the trench; a channel between the base region and the trench; a source region in the base region sandwiching the trench via the channel; a gate electrode in the trench via a gate insulation film; a source electrode coupled with the source region; a drain electrode on the substrate opposite to the drift layer; and a bottom layer under the trench. An edge portion of the bottom layer under a corner of a bottom of the trench is deeper than a center portion of the bottom layer under a center portion of the bottom of the trench.
摘要翻译： SiC半导体器件包括：衬底; 衬底上的漂移层; 漂移层上的沟槽; 夹在沟槽中的漂移层中的基底区域; 基极区域和沟槽之间的沟道; 所述基极区域中的源极区域经由所述沟道夹持所述沟槽; 通过栅极绝缘膜在沟槽中的栅电极; 与源极区域耦合的源电极; 衬底上的与漂移层相反的漏电极; 和沟槽下方的底层。在沟槽的底部的角部下方的底层的边缘部分比沟槽底部的中心部分下方的底层的中心部分更深。

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