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1. 发明授权

US09217919B2 Photosensitive composition, pattern-forming method using the composition, and resin used in the composition 有权
标题翻译：使用组合物的感光组合物，图案形成方法和组合物中使用的树脂
公开(公告)号：US09217919B2
公开(公告)日：2015-12-22
申请号：US13062285
申请日：2009-08-26
申请人： Hidenori Takahashi , Tomotaka Tsuchimura , Toru Tsuchihashi , Katsuhiro Yamashita , Naoyuki Nishikawa
发明人： Hidenori Takahashi , Tomotaka Tsuchimura , Toru Tsuchihashi , Katsuhiro Yamashita , Naoyuki Nishikawa
IPC分类号： G03F7/004 , C08F12/20 , C08F12/22 , C08F12/30 , C08F12/32 , G03F7/039 , C09D125/18
CPC分类号： G03F7/0392 , C08F12/20 , C08F12/22 , C08F12/30 , C08F12/32 , C09D125/18 , G03F7/0045 , G03F7/0046 , C08F212/14 , C08F222/36 , C08F212/32 , C08F2220/1883
摘要： A radiation-sensitive composition including a compound (P) having a partial structure (A) having an ionic structural site and capable of decomposing upon irradiation with an actinic ray or radiation to generate an acid and a partial structure (B) having at least one phenolic hydroxyl group, a part or all of hydrogen atoms of the hydroxyl group or groups each being protected by a group capable of leaving by the action of an acid, wherein the ionic structural site of the partial structure (A) contained in the compound (P) is a structure capable of generating an acid anion in the compound (P) upon irradiation with an actinic ray or radiation; a pattern-forming method using the same; and a resin which is used in the composition.
摘要翻译：一种辐射敏感性组合物，其包含具有离子结构位点的部分结构（A）的化合物（P），并且能够在用光化射线或辐射照射时分解以产生酸和部分结构（B），其具有至少一个酚羟基，羟基的一部分或全部氢原子或各自被能够通过酸的作用而离开的基团保护的基团，其中化合物中包含的部分结构（A）的离子结构位点（ P）是在通过光化射线或辐射照射时能够在化合物（P）中产生酸阴离子的结构; 使用其的图案形成方法; 和用于组合物中的树脂。

2. 发明申请

US20110159433A1 PHOTOSENSITIVE COMPOSITION, PATTERN-FORMING METHOD USING THE COMPOSITION, AND RESIN USED IN THE COMPOSITION 有权
标题翻译：感光性组合物，使用该组合物的图案形成方法和在组合物中使用的树脂
公开(公告)号：US20110159433A1
公开(公告)日：2011-06-30
申请号：US13062285
申请日：2009-08-26
申请人： Hidenori Takahashi , Tomotaka Tsuchimura , Toru Tsuchihashi , Katsuhiro Yamashita , Naoyuki Nishikawa
发明人： Hidenori Takahashi , Tomotaka Tsuchimura , Toru Tsuchihashi , Katsuhiro Yamashita , Naoyuki Nishikawa
IPC分类号： G03F7/20 , C07C309/00 , C08F228/02 , G03F7/004 , C08F214/18 , C08F222/40
CPC分类号： G03F7/0392 , C08F12/20 , C08F12/22 , C08F12/30 , C08F12/32 , C09D125/18 , G03F7/0045 , G03F7/0046 , C08F212/14 , C08F222/36 , C08F212/32 , C08F2220/1883
摘要： Provided are a radiation-sensitive composition including a compound (P) having a partial structure (A) having an ionic structural site and capable of decomposing upon irradiation with an actinic ray or radiation to generate an acid and a partial structure (B) having at least one phenolic hydroxyl group, a part or all of hydrogen atoms of the hydroxyl group or groups each being protected by a group capable of leaving by the action of an acid, wherein the ionic structural site of the partial structure (A) contained in the compound (P) is a structure capable of generating an acid anion in the compound (P) upon irradiation with an actinic ray or radiation; a pattern-forming method using the same; and a resin which is used in the composition.
摘要翻译：本发明提供一种辐射敏感性组合物，其包含具有离子结构位点的部分结构（A）的化合物（P），并且能够在用光化射线或辐射照射时分解以产生酸和部分结构（B）至少一个酚羟基，羟基的一部分或全部氢原子或各自被能够通过酸的作用离开的基团保护，其中部分结构（A）的离子结构位点包含在化合物（P）是在用光化射线或辐射照射时能够在化合物（P）中产生酸阴离子的结构; 使用其的图案形成方法; 和用于组合物中的树脂。

3. 发明授权

US08852845B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method using the same, and resin 有权
标题翻译：光敏感或辐射敏感性树脂组合物，抗蚀剂膜，使用其的图案形成方法和树脂
公开(公告)号：US08852845B2
公开(公告)日：2014-10-07
申请号：US12641877
申请日：2009-12-18
申请人： Hidenori Takahashi , Tomotaka Tsuchimura , Toru Tsuchihashi , Katsuhiro Yamashita , Hideaki Tsubaki
发明人： Hidenori Takahashi , Tomotaka Tsuchimura , Toru Tsuchihashi , Katsuhiro Yamashita , Hideaki Tsubaki
IPC分类号： G03F7/004 , G03F7/028 , G03F7/039
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0397 , Y10S430/122 , Y10S430/123
摘要： Provided is a actinic ray-sensitive or radiation-sensitive resin composition including (P) a resin containing (A) a repeating unit having an ionic structure moiety that contains a cation represented by formula (Ia) and is capable of producing an acid anion on the side chain upon irradiation with an actinic ray or radiation: wherein each of R1a to R13a independently represents a hydrogen atom or a monovalent substituent and may combine together to form a ring, and Z represents a single bond or a divalent linking group.
摘要翻译：本发明提供一种光化学射线敏感性或辐射敏感性树脂组合物，其包含（P）含有（A）具有离子性结构部分的重复单元的树脂，所述重复单元含有式（Ia）所示的阳离子，并且能够在侧光在照射光化学射线或辐射时：其中R 1a至R 13a各自独立地表示氢原子或一价取代基，并且可以结合在一起形成环，Z表示单键或二价连接基团。

4. 发明授权

US08034252B2 Metal-polishing liquid and chemical-mechanical polishing method using the same 失效
标题翻译：金属抛光液和化学机械抛光方法使用相同
公开(公告)号：US08034252B2
公开(公告)日：2011-10-11
申请号：US11701403
申请日：2007-02-02
申请人： Katsuhiro Yamashita
发明人： Katsuhiro Yamashita
IPC分类号： H01L21/461
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , C23F3/06
摘要： A metal-polishing liquid includes colloidal silica and a compound represented by Formula (I) or a compound represented by Formula (II). The colloidal silica is substituted by aluminum atoms at least one portion of the silicon atoms on the surfaces thereof. In Formula (I), R1 represents an alkyl group, alkynyl group, alkenyl group, allyl group or aryl group; R2 represents hydrogen atom, an alkyl group, alkynyl group, alkenyl group, allyl group or aryl group; m represents an integer from 0 to 6. In Formula (II), R3 represents an alkyl group or aryl group; n represents an integer from 1 to 30. R1—OOC—(CH2)m—COO—R2 Formula (I) R3—O—(CH2CH2O)n—SO3H Formula (II)
摘要翻译：金属抛光液包括胶体二氧化硅和由式（I）表示的化合物或由式（II）表示的化合物。胶体二氧化硅被铝原子的至少一部分硅表面的硅原子取代。在式（I）中，R 1表示烷基，炔基，烯基，烯丙基或芳基; R2表示氢原子，烷基，炔基，烯基，烯丙基或芳基; m表示0至6的整数。在式（II）中，R 3表示烷基或芳基; n表示1〜30的整数。R1-OOC-（CH2）m -COO-R2式（Ⅰ）R3-O-（CH2CH2O）n-SO3H式（Ⅱ）

5. 发明授权

US08017299B2 Positive resist composition and pattern forming method using the same 有权
标题翻译：正型抗蚀剂组合物和使用其的图案形成方法
公开(公告)号：US08017299B2
公开(公告)日：2011-09-13
申请号：US12257646
申请日：2008-10-24
申请人： Katsuhiro Yamashita
发明人： Katsuhiro Yamashita
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0392 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition for electron beam, X-ray or EUV exposure, including (A) a resin capable of decomposing by the action of an acid to increase the solubility in an alkali developer; and (B) a compound capable of generating a sulfonic acid upon irradiation with an actinic ray or radiation, wherein the resin (A) is a resin having a phenolic hydroxyl group and having a weight average molecular weight of 1,500 to 3,500, the positive resist composition has a property of decomposing by the action of an acid and causing the dissolution rate in an aqueous 2.38 wt % tetramethylammonium hydroxide solution at 23° C. under normal pressure to increase in a range of 200 to 5,000 times, and the positive resist composition has a solid content concentration of from 2.5 to 4.5 mass %.
摘要翻译：一种用于电子束，X射线或EUV曝光的正型抗蚀剂组合物，包括（A）能够通过酸的作用分解以提高在碱性显影剂中的溶解度的树脂; 和（B）能够在用光化射线或辐射照射时能够产生磺酸的化合物，其中树脂（A）是具有酚羟基并且重均分子量为1,500至3,500的树脂，正性抗蚀剂组合物具有通过酸的作用分解的性质，并且在常压下在23℃下使2.38重量％四甲基氢氧化铵水溶液中的溶解速率增加到200-5000倍的范围，并且正性抗蚀剂组合物固体成分浓度为2.5〜4.5质量％。

6. 发明授权

US07582139B2 Method for processing organic solvent-containing air 失效
标题翻译：加工含有机溶剂的空气的方法
公开(公告)号：US07582139B2
公开(公告)日：2009-09-01
申请号：US11678712
申请日：2007-02-26
申请人： Masaji Kurosawa , Katsuhiro Yamashita , Tomohiro Deguchi
发明人： Masaji Kurosawa , Katsuhiro Yamashita , Tomohiro Deguchi
IPC分类号： B01D53/06 , B01D53/86 , F23G7/07
CPC分类号： B01D53/04 , B01D53/261 , B01D53/8668 , B01D2257/704 , Y02A50/2328
摘要： A method for processing an organic solvent-containing air capable of being operated in spite of a rapid fluctuation of the concentration of organic solvents in the air to be processed and capable of using a combustion furnace exhaust gas as an air for regenerating dehumidifying member is provided. The method comprises carrying out simultaneously and continuously a dehumidification step (a), an adsorption-removing step (b), an adsorbing member-regeneration step (c), a combustion step (d), and a dehumidifying member-regeneration step (e) comprising mixing the adsorption-treated air produced in the adsorbing-removing step (b) with a combustion furnace exhaust gas produced in the combustion step (d) to obtain a mixed gas, decomposing the organic solvents in the mixed gas by oxidation, and causing the resulting purified gas to flow through the dehumidifying member which has adsorbed moisture, thereby regenerating the dehumidifying member.
摘要翻译：提供一种处理有机溶剂的空气的方法，即使在待处理的空气中的有机溶剂的浓度迅速变动并且能够使用燃烧炉废气作为用于再生除湿构件的空气的空气中，。该方法包括同时且连续地进行除湿步骤（a），吸附除去步骤（b），吸附部件再生步骤（c），燃烧步骤（d）和除湿部件再生步骤（e ）包括将吸附去除步骤（b）中产生的吸附处理的空气与在燃烧步骤（d）中产生的燃烧炉废气混合以获得混合气体，通过氧化分解混合气体中的有机溶剂，以及使得所得净化气体流过已吸收水分的除湿构件，从而再生除湿构件。

7. 发明申请

US20090202946A1 POSITIVE RESIST COMPOSITION FOR USE WITH ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME 有权
标题翻译：使用电子束，X射线或EUV的正电阻组合物及其形成方法
公开(公告)号：US20090202946A1
公开(公告)日：2009-08-13
申请号：US12370368
申请日：2009-02-12
申请人： Katsuhiro Yamashita
发明人： Katsuhiro Yamashita
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/039 , G03F7/0045
摘要： A positive resist composition for use with electron beam, X-ray or EUV and a pattern forming method using the positive resist composition are provided, the positive resist composition including: (A) a resin capable of decomposing under an action of an acid to increase a dissolution rate in an aqueous alkali solution; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a basic compound; and (D) an organic solvent, wherein the entire solid content concentration in the resist composition is from 1.0 to 4.5 mass % and a ratio of (B) the compound capable of generating an acid upon irradiation with actinic rays or radiation is from 10 to 50 mass % based on the entire solid content.
摘要翻译：提供了用于电子束，X射线或EUV的正型抗蚀剂组合物和使用正性抗蚀剂组合物的图案形成方法，正性抗蚀剂组合物包括：（A）能够在酸的作用下分解以增加的树脂在碱性水溶液中的溶解速率; （B）能够在用光化射线或辐射照射时能够产生酸的化合物; （C）碱性化合物; 和（D）有机溶剂，其中抗蚀剂组合物中的全部固体成分浓度为1.0〜4.5质量％，（B）在光化射线或辐射照射时能够产生酸的化合物的比例为10〜基于整体固体含量为50质量％。

8. 发明授权

US07547335B2 Metal polishing composition and method of polishing using the same 失效
标题翻译：金属抛光组合物和使用其的抛光方法
公开(公告)号：US07547335B2
公开(公告)日：2009-06-16
申请号：US11287386
申请日：2005-11-28
申请人： Hiroyuki Seki , Katsuhiro Yamashita , Tomohiko Akatsuka , Tadashi Inaba
发明人： Hiroyuki Seki , Katsuhiro Yamashita , Tomohiko Akatsuka , Tadashi Inaba
IPC分类号： B24D3/02 , C09C1/68
CPC分类号： C09G1/02 , H01L21/3212
摘要： A metal polishing composition comprising at least one of the compound represented by formula (1) defined herein and the compound represented by formula (2) defined herein, and an oxidizing agent, and a chemical mechanical polishing method comprising bringing the metal polishing composition into contact with a surface to be polished and providing a relative movement between the surface to be polished and a polishing surface.
摘要翻译：包含本文定义的由式（1）表示的化合物和由本文定义的式（2）表示的化合物和氧化剂中的至少一种的金属抛光组合物，以及包括使金属抛光组合物接触的化学机械抛光方法具有要抛光的表面并且在待抛光表面和抛光表面之间提供相对运动。

9. 发明申请

US20090111047A1 POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME 有权
标题翻译：电子束，X射线或EUV的正电阻组合物和使用其的图案形成方法
公开(公告)号：US20090111047A1
公开(公告)日：2009-04-30
申请号：US12259056
申请日：2008-10-27
申请人： Katsuhiro Yamashita
发明人： Katsuhiro Yamashita
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0392 , G03F7/0397 , Y10S430/114
摘要： A positive resist composition for electron beam, X-ray or EUV includes a compound having a proton acceptor functional group and capable of producing an acid radical upon irradiation with an actinic ray or radiation to reduce or lose the acceptor property or to change the proton acceptor functional group to be acidic, wherein the positive resist composition has a solid content concentration of from 2.5 to 4.5 mass %.
摘要翻译：用于电子束，X射线或EUV的正性抗蚀剂组合物包括具有质子受体官能团的化合物，并且能够在用光化射线或辐射照射时产生酸基以降低或失去受体性质或改变质子受体官能团为酸性，其中正性抗蚀剂组合物的固体成分浓度为2.5〜4.5质量％。

10. 发明申请

US20080066703A1 Nitrided valve lifter 审中-公开
标题翻译：硝化气门挺杆
公开(公告)号：US20080066703A1
公开(公告)日：2008-03-20
申请号：US11898446
申请日：2007-09-12
申请人： Katsuhiro Yamashita , Yasushi Ueno , Kazuyuki Shito , Shinnosuke Munemura , Chikara Sugawara
发明人： Katsuhiro Yamashita , Yasushi Ueno , Kazuyuki Shito , Shinnosuke Munemura , Chikara Sugawara
IPC分类号： F01L1/14
CPC分类号： C23C8/26 , C23C8/02 , C23C8/34 , F01L1/16 , F01L2103/00
摘要： A sliding surface (2) of a valve lifter (1) or a shim (3) is subjected to a gaseous nitriding to have a surface hardness of Hv 660 or higher and a thickness of a compound layer (6) of 1 to 5 μm. The nitrided layer on the surface is a dense compound layer (6) with a porosity of 5% or less.
摘要翻译：对气门挺杆（1）或垫片（3）的滑动表面（2）进行气态氮化，其表面硬度为Hv 660或更高，化合物层（6）的厚度为1至5μm 。表面上的氮化层是孔隙率为5％以下的致密化合物层（6）。

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