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1. 发明授权

US06174364B1 Method for producing silicon monocrystal and silicon monocrystal wafer 有权
标题翻译：硅单晶和硅单晶晶片的制造方法
公开(公告)号：US06174364B1
公开(公告)日：2001-01-16
申请号：US09232561
申请日：1999-01-15
申请人： Hideki Yamanaka , Masahiro Sakurada , Shinichi Horie
发明人： Hideki Yamanaka , Masahiro Sakurada , Shinichi Horie
IPC分类号： C30B3306
CPC分类号： C30B29/06 , C30B15/00
摘要： A method for producing a silicon monocrystal according to Czochralski method characterized in growing crystal with controlling a pulling rate between a transition pulling rate Pc at which there is caused a transition from a region where excess vacancies are present, but grown-in defect is not present to a region where excess interstitial silicon atoms are present, but an agglomerate thereof is not present, and a transition pulling rate Pi from a region where excess interstitial silicon atoms are present, but an agglomerate thereof is not present to a region where an agglomerate of interstitial silicon atoms is present. There are provided a method for producing a silicon monocrystal having no defect through the whole area of the wafer and having high quality wherein a deviation of amount of precipitated oxygen is small by pulling a crystal with controlling a pulling rate P as a general and interoperable valuable, and the silicon monocrystal produced thereby.
摘要翻译：根据Czochralski方法制造单晶硅的方法，其特征在于生长晶体，其控制在存在过量空位的区域的转变的过渡牵引速率Pc之间的牵引速率，但是不存在生长缺陷到存在过量的间隙硅原子但不存在其附聚物的区域，并且存在来自存在过量间隙硅原子的区域的过渡牵引速率P 1，但是其聚集体不存在于存在间隙硅原子。提供了通过晶片的整个区域制造没有缺陷的硅单晶的方法，并且具有高质量，其中通过以控制拉伸速率P拉动晶体作为一般和可互操作的有价值的，沉淀氧的量的偏差小，由此生成硅单晶。

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