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1. 发明授权

US09054028B2 Magnetic sensor and manufacturing method therefor 有权
标题翻译：磁传感器及其制造方法
公开(公告)号：US09054028B2
公开(公告)日：2015-06-09
申请号：US13459644
申请日：2012-04-30
申请人： Hiroshi Naito , Hideki Sato , Yukio Wakui , Masayoshi Omura
发明人： Hiroshi Naito , Hideki Sato , Yukio Wakui , Masayoshi Omura
IPC分类号： G01R33/09 , H01L21/00 , H01L27/22 , B82Y25/00 , H01L43/12
CPC分类号： H01L27/22 , B82Y25/00 , G01R33/09 , G01R33/093 , H01L43/12 , Y10T29/4902 , Y10T29/49075
摘要： A magnetic sensor for detecting the intensity of a magnetic field in three axial directions, in which a plurality of giant magnetoresistive elements are formed on a single semiconductor substrate. A thick film is formed on the semiconductor substrate; giant magnetoresistive elements forming X-axis and Y-axis sensors are formed on a planar surface thereof; and giant magnetoresistive elements forming a Z-axis sensor are formed using slopes of channels in the thick film. Each of the slopes of the channels can be constituted of a first slope and a second slope, so that a magneto-sensitive element is formed on the second slope having a larger inclination angle. In order to optimize the slope shape and inclination with respect to each channel, it is possible to form a dummy slope that does not directly relate to the formation of the giant magnetoresistive elements.
摘要翻译：一种磁传感器，用于检测在单个半导体衬底上形成多个巨磁电阻元件的三个轴向的磁场强度。在半导体衬底上形成厚膜; 在其平面上形成形成X轴和Y轴传感器的巨磁阻元件; 并且使用厚膜中的沟道的斜面形成形成Z轴传感器的巨磁阻元件。通道的每个斜面都可以由第一斜面和第二斜面构成，从而在具有较大倾斜角的第二斜面上形成磁敏元件。为了优化相对于每个通道的斜率形状和倾斜度，可以形成与形成巨磁阻元件没有直接关系的虚拟斜率。

2. 发明授权

US07360302B2 Manufacturing method of a magnetic sensor 失效
标题翻译：磁传感器的制造方法
公开(公告)号：US07360302B2
公开(公告)日：2008-04-22
申请号：US11497352
申请日：2006-08-02
申请人： Hideki Sato , Kokichi Aiso , Yukio Wakui
发明人： Hideki Sato , Kokichi Aiso , Yukio Wakui
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/0005 , G01R33/09 , H01F10/3268 , H01F10/3295 , H01F41/304 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49052 , Y10T29/49067
摘要： A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.
摘要翻译：磁传感器包括磁阻元件和永磁体膜，它们组合在一起以形成形成在具有正方形形状的石英衬底上的GMR元件，其中永磁体膜成对并连接到磁阻元件的两端，使得X 通过将GMR元件相对于石英基板的四个边进行适当配置来实现轴向磁传感器和Y轴磁传感器。这里，磁阻元件的被钉扎层的磁化方向相对于磁阻元件的长度方向相对于永久磁铁膜的磁化方向形成45°的规定角度。因此，即使施加强磁场，也可以可靠地抑制GMR元件的桥连接的偏移变化; 因此可以显着地提高对强磁场的电阻特性。

3. 发明申请

US20080091372A1 COMPASS SENSOR UNIT AND PORTABLE ELECTRONIC DEVICE 有权
标题翻译： COMPASS传感器单元和便携式电子设备
公开(公告)号：US20080091372A1
公开(公告)日：2008-04-17
申请号：US11948921
申请日：2007-11-30
申请人： Hideki Sato , Yukio Wakui , Masayoshi Omura
发明人： Hideki Sato , Yukio Wakui , Masayoshi Omura
IPC分类号： G01C17/38
CPC分类号： G01C17/38
摘要： In a compass sensor unit, an azimuth data computing method is carried out by the steps of: inputting a signal from a geomagnetic sensor to measure magnetic field; determining whether to store measurement data of the magnetic field based on a distance from the last stored measurement data; calculating an offset value based on the stored data; making a comparison for each component of a plurality of measurement data used for calculating the offset value, and judging the offset value to be valid when a difference between the maximum and minimum values of each component is a given value or more; updating the already stored offset value to the offset value judged to be valid; and correcting newly provided measurement data by the updated offset value to compute azimuth data.
摘要翻译：在罗盘传感器单元中，通过以下步骤执行方位数据计算方法：输入来自地磁传感器的信号以测量磁场; 基于距离最后存储的测量数据的距离确定是否存储磁场的测量数据; 基于所存储的数据计算偏移值; 对用于计算偏移值的多个测量数据的每个分量进行比较，并且当每个分量的最大值和最小值之间的差是给定值或更大时，判断偏移值是有效的; 将已经存储的偏移值更新为判断为有效的偏移值; 并通过更新的偏移值对新提供的测量数据进行校正，以计算方位数据。

4. 发明授权

US07170724B2 Magnetic sensor and manufacturing method therefor 失效
标题翻译：磁传感器及其制造方法
公开(公告)号：US07170724B2
公开(公告)日：2007-01-30
申请号：US10686261
申请日：2003-10-16
申请人： Hideki Sato , Kokichi Aiso , Yukio Wakui
发明人： Hideki Sato , Kokichi Aiso , Yukio Wakui
IPC分类号： G11B5/127
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/0005 , G01R33/09 , H01F10/3268 , H01F10/3295 , H01F41/304 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49052 , Y10T29/49067
摘要： A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.
摘要翻译：磁传感器包括磁阻元件和永磁体膜，它们组合在一起以形成形成在具有正方形形状的石英衬底上的GMR元件，其中永磁体膜成对并连接到磁阻元件的两端，使得X 通过将GMR元件相对于石英基板的四个边进行适当配置来实现轴向磁传感器和Y轴磁传感器。这里，磁阻元件的被钉扎层的磁化方向相对于磁阻元件的长度方向相对于永久磁铁膜的磁化方向形成45°的规定角度。因此，即使施加强磁场，也可以可靠地抑制GMR元件的桥连接的偏移变化; 因此可以显着地提高对强磁场的电阻特性。

5. 发明申请

US20060032064A1 Orientation data generation method, orientation sensor unit and portable electronic equipment 有权
标题翻译：定向数据生成方法，定向传感器单元和便携式电子设备
公开(公告)号：US20060032064A1
公开(公告)日：2006-02-16
申请号：US11200051
申请日：2005-08-10
申请人： Hideki Sato , Yukio Wakui
发明人： Hideki Sato , Yukio Wakui
IPC分类号： G01C17/38
CPC分类号： G01C17/38
摘要： Data are input from a geomagnetic sensor that detects magnetic fields in three axial directions, and magnetic field data are measured on the basis of the input data. The measured magnetic field data are sequentially stored, and a determination is made as to whether a plurality of the magnetic field data thus stored lie within a same plane in a three-dimensional orientation space. When it has been determined that the plurality of the magnetic field data lie within the same plane in the three-dimensional orientation space, center coordinates of a circular arc where the stored magnetic field data lie are calculated, as provisional offset values, on the basis of the magnetic field data and in accordance with a predetermined algorithm. Magnetic field data measured after the calculation of the provisional offset values is corrected with the provisional offset values, and an arithmetic operation is performed for determining orientation data on the basis of the corrected magnetic field data.
摘要翻译：数据是从检测三轴方向的磁场的地磁传感器输入的，并且根据输入数据测量磁场数据。依次存储测量的磁场数据，并且确定这样存储的多个磁场数据是否位于三维取向空间中的同一平面内。当确定多个磁场数据位于三维取向空间中的同一平面内时，计算存储的磁场数据的圆弧的中心坐标作为临时偏移值，基于的磁场数据并根据预定的算法。在临时偏移值的计算之后测量的磁场数据用临时偏移值进行校正，并且执行用于基于校正的磁场数据确定取向数据的算术运算。

6. 发明授权

US06904669B2 Magnetic sensor and method of producing the same 有权
标题翻译：磁传感器及其制造方法
公开(公告)号：US06904669B2
公开(公告)日：2005-06-14
申请号：US10052525
申请日：2002-01-23
申请人： Hideki Sato , Toshiyuki Oohashi , Yukio Wakui , Susumu Yoshida , Kokichi Aiso
发明人： Hideki Sato , Toshiyuki Oohashi , Yukio Wakui , Susumu Yoshida , Kokichi Aiso
IPC分类号： G01R33/09 , H01F10/14 , H01F41/18 , H01F41/30 , H01L43/08 , H01L43/12 , H01F10/08 , H01L21/00
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/09 , G01R33/093 , H01F41/302 , Y10T29/49002 , Y10T29/49037 , Y10T428/32
摘要： On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.
摘要翻译：在单个芯片上形成有多个磁阻效应元件，该元件具有在彼此交叉的方向上具有固定的磁化轴的固定层。在基板10上形成作为磁阻效应元件的两个磁隧道效应元件11,21的磁性层。形成由NiCo制成的磁场施加磁性层，以在平面图中夹着磁性层。对磁场施加磁性层施加磁场。在磁场施加磁性层沿着箭头A所示的方向被磁化之后，去除磁场。结果，通过磁场施加磁性层的剩余磁化，所示方向上的磁场通过箭头B施加到将成为磁隧道效应元件11,21的磁性层，由此将成为磁隧道效应元件11,21的磁性层的被钉扎层的磁化被固定在箭头B所示的方向。

7. 发明申请

US20120268113A1 THREE-AXIS MAGNETIC SENSOR AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：三轴磁传感器及其制造方法
公开(公告)号：US20120268113A1
公开(公告)日：2012-10-25
申请号：US13517526
申请日：2012-06-13
申请人： Hideki Sato , Masayoshi Omura , Hiroshi Naito , Toshiyuki Oohashi , Yukio Wakui , Chihiro Osuga
发明人： Hideki Sato , Masayoshi Omura , Hiroshi Naito , Toshiyuki Oohashi , Yukio Wakui , Chihiro Osuga
IPC分类号： G01R33/09 , G01R3/00
CPC分类号： H01L27/22 , B82Y25/00 , G01R33/09 , G01R33/093 , Y10T29/49002 , Y10T29/4902
摘要： In a three-axis magnetic sensor, a plurality of magnetoresistive effect element bars are connected in series by means of bias magnets formed on a flat surface parallel to the flat surface of the substrate to constitute magnetoresistive effect elements. The sensitivity direction of magnetization is a direction perpendicular to the longitudinal direction of each of the magnetoresistive effect element bars. Magnetoresistive effect elements forming X-axis and Y-axis sensors have magnetization directions that are orthogonal to each other. Magnetoresistive effect elements of the Z-axis sensor are formed on a tilted surface substrate in such a way that the magnetization direction is inside the tilted surface. The sensitivity direction of the Z-axis sensor is perpendicular to the longitudinal direction of the magnetoresistive effect element bar.
摘要翻译：在三轴磁传感器中，多个磁阻效应元件棒通过形成在平行于基板的平坦表面的平坦表面上的偏置磁铁串联连接，以构成磁阻效应元件。磁化的灵敏度方向是垂直于每个磁阻效应元件棒的纵向的方向。形成X轴和Y轴传感器的磁阻效应元件具有彼此正交的磁化方向。 Z轴传感器的磁阻效应元件形成在倾斜表面基板上，使得磁化方向在倾斜表面内。 Z轴传感器的灵敏度方向垂直于磁阻效应元件棒的纵向方向。

8. 发明授权

US08178361B2 Magnetic sensor and manufacturing method therefor 有权
标题翻译：磁传感器及其制造方法
公开(公告)号：US08178361B2
公开(公告)日：2012-05-15
申请号：US10584666
申请日：2006-03-15
申请人： Hiroshi Naito , Hideki Sato , Yukio Wakui , Masayoshi Omura
发明人： Hiroshi Naito , Hideki Sato , Yukio Wakui , Masayoshi Omura
IPC分类号： H01L21/00 , G01R33/09
CPC分类号： H01L27/22 , B82Y25/00 , G01R33/09 , G01R33/093 , H01L43/12 , Y10T29/4902 , Y10T29/49075
摘要： There is provided a small-size magnetic sensor for detecting the intensity of a magnetic field in three axial directions, in which a plurality of giant magnetoresistive elements are formed on a single semiconductor substrate. A thick film is formed on the semiconductor substrate; giant magnetoresistive elements forming an X-axis sensor and a Y-axis sensor are formed on a planar surface thereof; and giant magnetoresistive elements forming a Z-axis sensor are formed using slopes of channels formed in the thick film. Regarding the channel formation, it is possible to use the reactive ion etching and high-density plasma CVD methods. In addition, an insulating film is formed between the thick film and passivation film and is used as an etching stopper. Each of the slopes of the channels can be constituted of a first slope and a second slope, so that a magneto-sensitive element is formed on the second slope having a larger inclination angle. In order to optimize the slope shape and inclination with respect to each channel, it is possible to form a dummy slope that does not directly relate to the formation of the giant magnetoresistive elements.
摘要翻译：提供了一种用于检测三个轴向上的磁场强度的小型磁传感器，其中在单个半导体衬底上形成多个巨磁电阻元件。在半导体衬底上形成厚膜; 在其平面上形成形成X轴传感器和Y轴传感器的巨磁阻元件; 并且使用形成在厚膜中的通道的斜面形成形成Z轴传感器的巨磁阻元件。关于通道形成，可以使用反应离子蚀刻和高密度等离子体CVD方法。此外，在厚膜和钝化膜之间形成绝缘膜，并用作蚀刻停止层。通道的每个斜面可以由第一斜面和第二斜面构成，使得在具有较大倾斜角的第二斜面上形成磁敏元件。为了优化相对于每个通道的斜率形状和倾斜度，可以形成与形成巨磁阻元件没有直接关系的虚拟斜率。

9. 发明授权

US07606676B2 Compass sensor unit and portable electronic device 失效
标题翻译：指南针传感器单元和便携式电子设备
公开(公告)号：US07606676B2
公开(公告)日：2009-10-20
申请号：US12206521
申请日：2008-09-08
申请人： Hideki Sato , Yukio Wakui , Masayoshi Omura
发明人： Hideki Sato , Yukio Wakui , Masayoshi Omura
IPC分类号： G01D18/00 , G06F19/00
CPC分类号： G01C17/38
摘要： In a compass sensor unit, an azimuth data computing method is carried out by the steps of: inputting a signal from a geomagnetic sensor to measure magnetic field; determining whether to store measurement data of the magnetic field based on a distance from the last stored measurement data; calculating an offset value based on the stored data; making a comparison for each component of a plurality of measurement data used for calculating the offset value, and judging the offset value to be valid when a difference between the maximum and minimum values of each component is a given value or more; updating the already stored offset value to the offset value judged to be valid; and correcting newly provided measurement data by the updated offset value to compute azimuth data.
摘要翻译：在罗盘传感器单元中，通过以下步骤执行方位数据计算方法：输入来自地磁传感器的信号以测量磁场; 基于距离最后存储的测量数据的距离确定是否存储磁场的测量数据; 基于所存储的数据计算偏移值; 对用于计算偏移值的多个测量数据的每个分量进行比较，并且当每个分量的最大值和最小值之间的差是给定值或更大时，判断偏移值是有效的; 将已经存储的偏移值更新为判断为有效的偏移值; 并通过更新的偏移值对新提供的测量数据进行校正，以计算方位数据。

10. 发明申请

US20090027048A1 Three-Axis Magnetic Sensor and Method for Manufacturing the Same 审中-公开
标题翻译：三轴磁传感器及其制造方法
公开(公告)号：US20090027048A1
公开(公告)日：2009-01-29
申请号：US11908549
申请日：2006-03-17
申请人： Hideki Sato , Masayoshi Omura , Hiroshi Naito , Toshiyuki Oohashi , Yukio Wakui , Chihiro Osuga
发明人： Hideki Sato , Masayoshi Omura , Hiroshi Naito , Toshiyuki Oohashi , Yukio Wakui , Chihiro Osuga
IPC分类号： G01R33/09 , G01R3/00
CPC分类号： H01L27/22 , B82Y25/00 , G01R33/09 , G01R33/093 , Y10T29/49002 , Y10T29/4902
摘要： In the three-axis magnetic sensor of the present invention, a plurality of magnetoresistive effect element bars are connected in series by means of bias magnets to constitute magnetoresistive effect elements, and magnetoresistive effect elements of the X-axis sensor and those of the Y-axis sensor are formed on a flat surface parallel to the flat surface of the substrate. The sensitivity direction of magnetization is a direction vertical to the longitudinal direction of each of the magnetoresistive effect element bars, and magnetoresistive effect elements of the X-axis sensor and those of the Y-axis sensor are formed in such a way that the magnetization directions are orthogonal to each other. Further, magnetoresistive effect elements of the Z-axis sensor are formed on a tilted surface of the projection projected from the flat surface of the substrate in such a way that the magnetization direction is inside the tilted surface. The Z-axis sensor is provided in such a way that the sensitivity direction is vertical to the longitudinal direction of the magnetoresistive effect element bar.
摘要翻译：在本发明的三轴磁传感器中，多个磁阻效应元件棒通过偏置磁铁串联连接，构成磁阻效应元件，X轴传感器和Y轴传感器的磁阻效应元件，轴传感器形成在平行于基板的平坦表面的平坦表面上。磁化的灵敏度方向是垂直于每个磁阻效应元件棒的纵向的方向，并且X轴传感器和Y轴传感器的磁阻效应元件以这样的方式形成，使得磁化方向彼此正交。此外，Z轴传感器的磁阻效应元件形成在从基板的平坦表面突出的突起的倾斜表面上，使得磁化方向在倾斜表面内。 Z轴传感器以灵敏度方向垂直于磁阻效应元件棒的纵向的方式设置。

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