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1. 发明申请

US20120034763A1 Method of Manufacturing Nitride Semiconductor Substrate 审中-公开
标题翻译：制造氮化物半导体基板的方法
公开(公告)号：US20120034763A1
公开(公告)日：2012-02-09
申请号：US13273248
申请日：2011-10-14
申请人： Hideki Osada , Koji Uematsu , Seiji Nakahata , Fumitake Nakanishi
发明人： Hideki Osada , Koji Uematsu , Seiji Nakahata , Fumitake Nakanishi
IPC分类号： H01L21/20
CPC分类号： C30B29/403 , C30B25/186 , C30B29/406
摘要： The present invention provides a method of manufacturing a nitride semiconductor substrate capable of efficiently manufacturing a nitride semiconductor substrate having a nonpolar plane as a major surface in which polycrystalline growth is minimized. A method of manufacturing a GaN substrate, which is a nitride semiconductor substrate, includes steps (S10 and S20) of preparing a starting substrate composed of GaN and having a major surface with an off-axis angle of between 4.1° and 47.8° inclusive with respect to a {1-100} plane, a step (S40) of epitaxially growing a semiconductor layer made of GaN on the major surface of the starting substrate, and a step (S50) of picking out a GaN substrate having an m plane as the major surface from the semiconductor layer.
摘要翻译：本发明提供了一种制造氮化物半导体衬底的方法，该氮化物半导体衬底能够有效地制造具有非极性面作为多晶生长最小化的主表面的氮化物半导体衬底。制造作为氮化物半导体基板的GaN衬底的方法包括制备由GaN构成的起始衬底和具有4.1°至47.8°之间的偏轴角的主表面的步骤（S10和S20）相对于{1-100}面，在起始衬底的主表面上外延生长由GaN制成的半导体层的步骤（S40），以及步骤（S50），将具有m面的GaN衬底取出为半导体层的主要表面。

2. 发明申请

US20120329245A1 Group III Nitride Crystal and Method for Producing the Same 有权
标题翻译： III族氮化物晶体及其制造方法
公开(公告)号：US20120329245A1
公开(公告)日：2012-12-27
申请号：US13338263
申请日：2011-12-28
申请人： Koji Uematsu , Hideki Osada , Seiji Nakahata , Shinsuke Fujiwara
发明人： Koji Uematsu , Hideki Osada , Seiji Nakahata , Shinsuke Fujiwara
IPC分类号： H01L21/78 , C01B21/06
CPC分类号： H01L29/045 , C01B21/0632 , C01P2002/90 , C01P2006/12 , C30B29/403 , C30B29/406 , C30B33/06 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/16 , H01L33/32
摘要： A method for producing a group III nitride crystal in the present invention includes the steps of cutting a plurality of group III nitride crystal substrates 10p and 10q having a main plane from a group III nitride bulk crystal 1, the main planes 10pm and 10qm having a plane orientation with an off-angle of five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates 10p and 10q adjacent to each other such that the main planes 10pm and 10qm of the substrates 10p and 10q are parallel to each other and each [0001] direction of the substrates 10p and 10q coincides with each other, and growing a group III nitride crystal 20 on the main planes 10pm and 10qm of the substrates 10p and 10q.
摘要翻译：本发明的III族氮化物晶体的制造方法包括从III族氮化物本体晶体1切割出具有主面的多个III族氮化物晶体基板10p，10q，主平面10pm，10qm具有平面取向相对于从{20-21}，{20-2-1}，{22-41}和{22-41}组成的组中的晶体 - 几何等效平面取向具有5度或更小的偏离角度， 22-4-1}，使基板10p和10q彼此相邻地布置，使得基板10p和10q的主平面10pm和10qm彼此平行，并且基板10p和10q的每个[0001]方向与并且在基板10p和10q的主平面10pm和10qm上生长III族氮化物晶体20。

3. 发明授权

US08598685B2 GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereof 有权
标题翻译： GaN单晶衬底及其制造方法和GaN基半导体器件及其制造方法
公开(公告)号：US08598685B2
公开(公告)日：2013-12-03
申请号：US12817753
申请日：2010-06-17
申请人： Shinsuke Fujiwara , Koji Uematsu , Hideki Osada , Seiji Nakahata
发明人： Shinsuke Fujiwara , Koji Uematsu , Hideki Osada , Seiji Nakahata
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , C30B25/20 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L29/36 , H01L33/0075 , H01L33/16
摘要： A GaN single crystal substrate has a main surface with an area of not less than 10 cm2, the main surface has a plane orientation inclined by not less than 65° and not more than 85° with respect to one of a (0001) plane and a (000-1) plane, and the substrate has at least one of a substantially uniform distribution of a carrier concentration in the main surface, a substantially uniform distribution of a dislocation density in the main surface, and a photoelasticity distortion value of not more than 5×10−5, the photoelasticity distortion value being measured by photoelasticity at an arbitrary point in the main surface when light is applied perpendicularly to the main surface at an ambient temperature of 25° C. Thus, the GaN single crystal substrate suitable for manufacture of a GaN-based semiconductor device having a small variation of characteristics can be obtained.
摘要翻译： GaN单晶衬底具有面积不小于10cm 2的主表面，主表面相对于（0001）面和（0001）面之一具有倾斜不小于65°且不大于85°的面取向（000-1）面，并且基板具有在主表面中载流子浓度基本均匀分布中的至少一个，主表面中位错密度的基本均匀分布，并且光弹性变形值不大在5×10-5以下的情况下，在25℃的环境温度下垂直于主表面照射主表面的任意点时，通过光弹性测定光弹性失真值。因此，GaN单晶基板适合可以获得具有小的特性变化的GaN基半导体器件的制造。

4. 发明授权

US08524575B2 Group III nitride crystal and method for producing the same 有权
标题翻译： III族氮化物晶体及其制造方法
公开(公告)号：US08524575B2
公开(公告)日：2013-09-03
申请号：US13338263
申请日：2011-12-28
申请人： Koji Uematsu , Hideki Osada , Seiji Nakahata , Shinsuke Fujiwara
发明人： Koji Uematsu , Hideki Osada , Seiji Nakahata , Shinsuke Fujiwara
IPC分类号： H01L21/00 , H01L29/20 , H01L21/20 , H01L21/06
CPC分类号： H01L29/045 , C01B21/0632 , C01P2002/90 , C01P2006/12 , C30B29/403 , C30B29/406 , C30B33/06 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/16 , H01L33/32
摘要： A method for producing a group III nitride crystal in the present invention includes the steps of cutting a plurality of group III nitride crystal substrates 10p and 10q having a main plane from a group III nitride bulk crystal 1, the main planes 10pm and 10qm having a plane orientation with an off-angle of five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates 10p and 10q adjacent to each other such that the main planes 10pm and 10qm of the substrates 10p and 10q are parallel to each other and each [0001] direction of the substrates 10p and 10q coincides with each other, and growing a group III nitride crystal 20 on the main planes 10pm and 10qm of the substrates 10p and 10q.
摘要翻译：本发明的III族氮化物晶体的制造方法包括从III族氮化物本体晶体1切割出具有主面的多个III族氮化物晶体基板10p，10q，主平面10pm，10qm具有平面取向相对于从{20-21}，{20-2-1}，{22-41}和{22-41}组成的组中的晶体 - 几何等效平面取向具有5度或更小的偏离角度， 22-4-1}，使基板10p和10q彼此相邻地布置，使得基板10p和10q的主平面10pm和10qm彼此平行，并且基板10p和10q的每个[0001]方向与并且在基板10p和10q的主平面10pm和10qm上生长III族氮化物晶体20。

5. 发明申请

US20110057197A1 GaN SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING THEREOF AND GaN-BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF 有权
标题翻译： GaN单晶基板及其制造方法和GaN基半导体器件及其制造方法
公开(公告)号：US20110057197A1
公开(公告)日：2011-03-10
申请号：US12817753
申请日：2010-06-17
申请人： Shinsuke FUJIWARA , Koji Uematsu , Hideki Osada , Seiji Nakahata
发明人： Shinsuke FUJIWARA , Koji Uematsu , Hideki Osada , Seiji Nakahata
IPC分类号： H01L29/20 , C30B25/18 , H01L21/20
CPC分类号： H01L29/2003 , C30B25/20 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L29/36 , H01L33/0075 , H01L33/16
摘要： A GaN single crystal substrate has a main surface with an area of not less than 10 cm2, the main surface has a plane orientation inclined by not less than 65° and not more than 85° with respect to one of a (0001) plane and a (000-1) plane, and the substrate has at least one of a substantially uniform distribution of a carrier concentration in the main surface, a substantially uniform distribution of a dislocation density in the main surface, and a photoelasticity distortion value of not more than 5×10−5, the photoelasticity distortion value being measured by photoelasticity at an arbitrary point in the main surface when light is applied perpendicularly to the main surface at an ambient temperature of 25° C. Thus, the GaN single crystal substrate suitable for manufacture of a GaN-based semiconductor device having a small variation of characteristics can be obtained.
摘要翻译： GaN单晶衬底具有面积不小于10cm 2的主表面，主表面相对于（0001）面和（0001）面之一具有倾斜不小于65°且不大于85°的面取向（000-1）面，并且基板具有在主表面中载流子浓度基本均匀分布中的至少一个，主表面中位错密度的基本均匀分布，并且光弹性变形值不大在5×10-5以下的情况下，在25℃的环境温度下垂直于主表面照射主表面的任意点时，通过光弹性测定光弹性失真值。因此，GaN单晶基板适合可以获得具有小的特性变化的GaN基半导体器件的制造。

6. 发明授权

US07816238B2 GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrate 失效
标题翻译： GaN衬底，具有外延层的衬底，半导体器件和制造GaN衬底的方法
公开(公告)号：US07816238B2
公开(公告)日：2010-10-19
申请号：US12137038
申请日：2008-06-11
申请人： Hideki Osada , Hitoshi Kasai , Keiji Ishibashi , Seiji Nakahata , Takashi Kyono , Katsushi Akita , Yoshiki Miura
发明人： Hideki Osada , Hitoshi Kasai , Keiji Ishibashi , Seiji Nakahata , Takashi Kyono , Katsushi Akita , Yoshiki Miura
IPC分类号： H01L21/20
CPC分类号： H01L29/2003 , C30B25/02 , C30B25/183 , C30B29/406 , H01L29/045 , Y10S438/945 , Y10S438/973
摘要： A GaN substrate having a large diameter of two inches or more by which a semiconductor device such as a light emitting element with improved characteristics such as luminance efficiency, an operating life and the like can be obtained at low cost industrially, a substrate having an epitaxial layer formed on the GaN substrate, a semiconductor device, and a method of manufacturing the GaN substrate are provided. A GaN substrate has a main surface and contains a low-defect crystal region and a defect concentrated region adjacent to low-defect crystal region. Low-defect crystal region and defect concentrated region extend from the main surface to a back surface positioned on the opposite side of the main surface. A plane direction [0001] is inclined in an off-angle direction with respect to a normal vector of the main surface.
摘要翻译：具有两英寸以上的大直径的GaN衬底，通过该GaN衬底可以以低成本在工业上获得具有诸如亮度效率，寿命等的改善的特性的发光元件的半导体器件，具有外延的衬底提供了形成在GaN衬底上的层，半导体器件和制造GaN衬底的方法。 GaN衬底具有主表面并且包含低缺陷晶体区域和与低缺陷晶体区域相邻的缺陷集中区域。低缺陷晶体区域和缺陷集中区域从主表面延伸到位于主表面相对侧的后表面。平面方向相对于主表面的法线矢量在偏角方向上倾斜。

7. 发明申请

US20120074403A1 METHOD FOR GROWING GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE 审中-公开
标题翻译：用于生长GaN晶体和GaN晶体衬底的方法
公开(公告)号：US20120074403A1
公开(公告)日：2012-03-29
申请号：US13111595
申请日：2011-05-19
申请人： Shinsuke Fujiwara , Koji Uematsu , Hideki Osada
发明人： Shinsuke Fujiwara , Koji Uematsu , Hideki Osada
IPC分类号： H01L29/20 , C30B19/12 , C30B19/02 , C30B25/20 , C30B23/02
CPC分类号： H01L21/0262 , C30B23/025 , C30B25/18 , H01L21/02389 , H01L21/02433 , H01L21/0254
摘要： The present invention is to provide GaN crystal growing method for growing a GaN crystal with few stacking faults on a GaN seed crystal substrate having a main surface inclined at an angle of 20° to 90° from the (0001) plane, and also to provide a GaN crystal substrate with few stacking faults. A method for growing a GaN crystal includes the steps of preparing a GaN seed crystal substrate 10 having a main surface 10m inclined at an angle of 20° to 90° from a (0001) plane 10c and growing a GaN crystal 20 on the GaN seed crystal substrate 10. The GaN seed crystal substrate 10 and the GaN crystal 20 have a difference in impurity concentration of 3×1018 cm−3 or less.
摘要翻译：本发明是提供一种GaN晶体生长方法，用于在具有从（0001）面倾斜20°至90°的主表面的GaN晶种衬底上生长具有很少堆垛层错的GaN晶体，并且还提供具有很少层叠缺陷的GaN晶体衬底。一种用于生长GaN晶体的方法包括以下步骤：制备具有从（0001）面10c以20°至90°的角度倾斜的主表面10m并在GaN晶种上生长GaN晶体20的GaN晶种衬底10 GaN晶种基板10和GaN晶体20的杂质浓度差为3×1018cm-3以下。

8. 发明授权

US06360702B1 EGR and oil cooling system 有权
标题翻译： EGR和油冷却系统
公开(公告)号：US06360702B1
公开(公告)日：2002-03-26
申请号：US09707637
申请日：2000-11-07
申请人： Hideki Osada
发明人： Hideki Osada
IPC分类号： F01P106
CPC分类号： F28D9/0043 , F01P2003/006 , F02M26/28 , F02M26/30 , F02M26/32 , F28D7/0066 , F28D7/1684 , F28D2021/0089
摘要： A system (1) for cooling EGR gas and lubrication oil, which is compact, resistive to vibration, and heats the lubrication oil at cold start of an engine (2) while cooling EGR gas. A system housing (10) is directly attached to a lateral wall of a cylinder block (3) such that engine cooling water flows therein. An EGR gas heat exchanger (16) and oil heat exchanger (15) are located in the housing (10) and immersed in the cooling water. Since the two heat exchangers (15, 16) are placed close to each other, high temperature EGR gas flowing in the EGR gas heat exchanger (16) heats low temperature lubrication oil flowing in the oil heat exchanger (15) via the cooling water when the engine (2) is cold. As a result, the viscosity of the lubrication oil drops and it assists easier start up of the engine under a cold condition. Since the single housing (10) is shared by the two heat exchangers (15, 16), the system (1) is compact.
摘要翻译：一种用于冷却EGR气体和润滑油的系统（1），其紧凑，耐振动，并且在冷却EGR气体的同时在发动机冷启动时加热润滑油（2）。系统壳体（10）直接附接到气缸体（3）的侧壁，使得发动机冷却水流入其中。 EGR气体热交换器（16）和油热交换器（15）位于壳体（10）中并浸入冷却水中。由于两个热交换器（15,16）彼此靠近放置，所以在EGR气体热交换器（16）中流动的高温EGR气体经由冷却水加热在油热交换器（15）中流动的低温润滑油，发动机（2）是冷的。结果，润滑油的粘度下降，并且有助于在寒冷的条件下更容易地启动发动机。由于单个壳体（10）由两个热交换器（15,16）共用，所以系统（1）是紧凑的。

9. 发明申请

US20130134434A1 NITRIDE SEMICONDUCTOR SUBSTRATE 有权
标题翻译：氮化物半导体基板
公开(公告)号：US20130134434A1
公开(公告)日：2013-05-30
申请号：US13307396
申请日：2011-11-30
申请人： Hidenori Mikami , Naoki Matsumoto , Hideki Osada , Yusuke Yoshizumi , Sayuri Yamaguchi
发明人： Hidenori Mikami , Naoki Matsumoto , Hideki Osada , Yusuke Yoshizumi , Sayuri Yamaguchi
IPC分类号： H01L29/15
CPC分类号： H01S5/3202 , B82Y20/00 , H01L29/045 , H01L29/2003 , H01L29/7787 , H01L29/808 , H01L29/812 , H01S5/2201 , H01S5/34333 , H01S2301/176
摘要： A nitride semiconductor device includes a main surface and an indicator portion. The main surface is a plane inclined by at least 71° and at most 79° in a [1-100] direction from a (0001) plane or a plane inclined by at least 71° and at most 79° in a [−1100] direction from a (000-1) plane. The indicator portion indicates a (−1017) plane, a (10-1-7) plane, or a plane inclined by at least −4° and at most 4° in the [1-100] direction from these planes and inclined by at least −0.5° and at most 0.5° in a direction orthogonal to the [1-100] direction.
摘要翻译：氮化物半导体器件包括主表面和指示器部分。主表面是在[0001]面或[-1100]中倾斜至少71°和最多79°的平面的[1-100]方向上倾斜至少71°和至多79°的平面 ]方向从（000-1）平面。指示器部分表示（-1017）面，（10-1-7）面，或在这些平面沿[1-100]方向倾斜至少-4°至最多4°的平面，并且倾斜于在与[1-100]方向正交的方向上至少为-0.5°且至多0.5°。

10. 发明授权

US09760070B2 Variable speed device and variable speed system 有权
公开(公告)号：US09760070B2
公开(公告)日：2017-09-12
申请号：US14425967
申请日：2012-11-14
申请人： Hideki Osada
发明人： Hideki Osada
IPC分类号： G05B15/02 , H02P27/08 , G01P13/04 , G01D7/02
CPC分类号： G05B15/02 , G01D7/02 , G01P13/04 , H02P27/085
摘要： A variable speed device that drives an electric motor includes a first acquiring unit that acquires a first parameter concerning an operation state of the electric motor, a second acquiring unit that acquires a second parameter concerning the operation state of the electric motor, the second parameter being related to the first parameter, a third acquiring unit that acquires a third parameter concerning a setting state of the electric motor, and a display control unit that simultaneously displays, on one display screen, a first display item corresponding to the acquired first parameter, a second display item corresponding to the acquired second parameter, and a third display item corresponding to the acquired third parameter. The display control unit graphically displays the first display item and the second display item in association with each other.

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