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    • 1. 发明授权
    • Semiconductor device and control method thereof
    • 半导体装置及其控制方法
    • US07227780B2
    • 2007-06-05
    • US11289997
    • 2005-11-30
    • Hideki KomoriShouichi KawamuraMasanori Taya
    • Hideki KomoriShouichi KawamuraMasanori Taya
    • G11C11/34
    • G11C16/12G11C2216/14
    • A semiconductor device including a program voltage supply circuit that supplies a drain of a memory cell with a program voltage, a detection circuit that refers to an output voltage of the program voltage supply circuit and detects a decrease of the program voltage supplied thereby, a frequency converting circuit that generates the clock signal by converting a frequency of a clock signal generated by an oscillator circuit into a lower frequency when the program voltage supplied by the program voltage supply circuit becomes equal to or lower than a given voltage, and a voltage generating circuit that generates a voltage supplied to a gate of the memory cell by using a clock signal, the frequency of which is converted by the frequency converting circuit. It is therefore possible to make the best use of the ability of the program voltage generating circuit in programming.
    • 一种半导体器件,包括:向存储单元的漏极供给编程电压的编程电压供给电路;参考编程电压供给电路的输出电压并检测由此提供的编程电压的降低的检测电路;频率 转换电路,当由编程电压供应电路提供的编程电压变为等于或低于给定电压时,通过将由振荡器电路产生的时钟信号的频率转换为较低频率来产生时钟信号;以及电压产生电路 其通过使用频率由频率转换电路转换的时钟信号来产生提供给存储器单元的栅极的电压。 因此,可以充分利用编程电压产生电路在编程中的能力。
    • 2. 发明申请
    • Semiconductor device and control method thereof
    • 半导体装置及其控制方法
    • US20060245250A1
    • 2006-11-02
    • US11289997
    • 2005-11-30
    • Hideki KomoriShouichi KawamuraMasanori Taya
    • Hideki KomoriShouichi KawamuraMasanori Taya
    • G11C16/04
    • G11C16/12G11C2216/14
    • There is provided a semiconductor device including a program voltage supply circuit that supplies a drain of a memory cell with a program voltage, a detection circuit that refers to an output voltage of the program voltage supply circuit and detects a decrease of the program voltage supplied thereby, a frequency converting circuit that generates the clock signal by converting a frequency of a clock signal generated by an oscillator circuit into a lower frequency when the program voltage supplied by the program voltage supply circuit becomes equal to or lower than a given voltage, and a voltage generating circuit that generates a voltage supplied to a gate of the memory cell by using a clock signal, the frequency of which is converted by the frequency converting circuit. It is therefore possible to make the best use of the ability of the program voltage generating circuit in programming.
    • 提供了一种半导体器件,包括向存储单元的漏极提供编程电压的编程电压供给电路,参考编程电压供应电路的输出电压并检测由此提供的编程电压的降低的检测电路 频率转换电路,当由编程电压供给电路提供的编程电压变为等于或低于给定电压时,通过将由振荡器电路产生的时钟信号的频率转换成较低的频率来产生时钟信号;以及 电压产生电路,其通过使用频率由频率转换电路转换的时钟信号产生提供给存储器单元的栅极的电压。 因此,可以充分利用编程电压产生电路在编程中的能力。