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    • 7. 发明申请
    • Process for producing solid electrolytic capacitor and solid electrolytic capacitor
    • 固体电解电容器和固体电解电容器的生产工艺
    • US20050152099A1
    • 2005-07-14
    • US11075729
    • 2005-03-10
    • Eizo FujiiHideki Ishida
    • Eizo FujiiHideki Ishida
    • H01G2/12H01G9/00H01G9/004H01G9/012H01G9/15H01G13/00
    • H01G9/012H01G9/15H01G11/56Y02E60/13Y10T29/417
    • The invention provides a process for fabricating a solid electrolytic capacitor of the chip type which process includes the steps of plating a fabrication frame comprising an anode terminal member and a cathode terminal member projecting from a pair of side frame members respectively so as to be opposed to each other, the anode terminal member being stepped so as to provide a lower portion toward the cathode terminal member, a hole extending vertically and being formed in each of the anode terminal member and a higher portion of the cathode terminal member, joining an anode lead of a capacitor element to an upper surface of the cathode terminal member and a bottom surface of the capacitor element to an upper surface of the lower portion of the cathode terminal member, forming a packaging resin portion around the capacitor element without permitting resin to ingress into the holes, and cutting the anode and cathode terminal members along vertical planes extending through the respective holes.
    • 本发明提供了一种制造芯片型固体电解电容器的方法,该方法包括以下步骤:分别对从包括一对侧框架构件突出的阳极端子构件和阴极端子构件的制造框架进行电镀以与 另一方面,阳极端子部件是阶梯状的,以向阴极端子部件提供下部,垂直延伸并形成在阳极端子部件和阴极端子部件的较高部分中的孔,将阳极引线 电容器元件的上表面和电容器元件的底表面到阴极端子构件的下部的上表面,在电容器元件周围形成封装树脂部分,而不允许树脂进入 孔,并且沿着延伸穿过相应的垂直平面切割阳极和阴极端子构件 孔。
    • 10. 发明申请
    • Process for producing solid electrolytic capacitor and solid electrolytic capacitor
    • 固体电解电容器和固体电解电容器的生产工艺
    • US20060146482A1
    • 2006-07-06
    • US11365834
    • 2006-03-02
    • Eizo FujiiHideki Ishida
    • Eizo FujiiHideki Ishida
    • H01G9/00
    • H01G9/012H01G9/15H01G11/56Y02E60/13Y10T29/417
    • The invention provides a process for fabricating a solid electrolytic capacitor of the chip type which process includes the steps of plating a fabrication frame comprising an anode terminal member and a cathode terminal member projecting from a pair of side frame members respectively so as to be opposed to each other, the anode terminal member being stepped so as to provide a lower portion toward the cathode terminal member, a hole extending vertically and being formed in each of the anode terminal member and a higher portion of the cathode terminal member, joining an anode lead of a capacitor element to an upper surface of the cathode terminal member and a bottom surface of the capacitor element to an upper surface of the lower portion of the cathode terminal member, forming a packaging resin portion around the capacitor element without permitting resin to ingress into the holes, and cutting the anode and cathode terminal members along vertical planes extending through the respective holes.
    • 本发明提供了一种制造芯片型固体电解电容器的方法,该方法包括以下步骤:分别对从包括一对侧框架构件突出的阳极端子构件和阴极端子构件的制造框架进行电镀以与 另一方面,阳极端子部件是阶梯状的,以向阴极端子部件提供下部,垂直延伸并形成在阳极端子部件和阴极端子部件的较高部分中的孔,将阳极引线 电容器元件的上表面和电容器元件的底表面到阴极端子构件的下部的上表面,在电容器元件周围形成封装树脂部分,而不允许树脂进入 孔,并且沿着延伸穿过相应的垂直平面切割阳极和阴极端子构件 孔。