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1. 发明申请

US20090262555A1 CURRENT-MODE CONTROLLED DC-DC CONVERTER 有权
标题翻译：电流模式控制DC-DC转换器
公开(公告)号：US20090262555A1
公开(公告)日：2009-10-22
申请号：US12250839
申请日：2008-10-14
申请人： Hideki Asuke , Hideharu Takano , Masaki Kanazawa , Mamoru Tsuruya , Masayoshi Yamamoto , Hiroyuki Horii , Shigeyuki Funabiki
发明人： Hideki Asuke , Hideharu Takano , Masaki Kanazawa , Mamoru Tsuruya , Masayoshi Yamamoto , Hiroyuki Horii , Shigeyuki Funabiki
IPC分类号： H02M3/335
CPC分类号： H02M3/1584 , H02M2001/0064
摘要： A current-mode controlled DC-DC converter includes a comparator comparing a first or second current detection signal with a first or second reference current that is based on an error voltage of a voltage detection signal, a pulse generator generating a first pulse signal whose ON time is longer than an interval between when the second current detection signal reaches a minimum value and when the second current detection signal reaches the second reference current, a pulse generator generating a second pulse signal whose ON time is longer than an interval between when the first current detection signal reaches a minimum value and when the first current detection signal reaches the first reference current, the second pulse signal being behind the first pulse signal by a half period, and a PWM circuit generating a first or second PWM signal according to the pulse signal and an output signal from the comparator, thereby turning on/off a switch.
摘要翻译：电流模式控制的DC-DC转换器包括比较第一或第二电流检测信号与基于电压检测信号的误差电压的第一或第二参考电流的比较器，脉冲发生器产生第一脉冲信号，其ON 时间长于当第二电流检测信号达到最小值之间的间隔和当第二电流检测信号达到第二参考电流时的间隔;脉冲发生器，其生成第二脉冲信号，其接通时间长于第一电流检测信号之间的间隔电流检测信号达到最小值，并且当第一电流检测信号达到第一参考电流时，第二脉冲信号在第一脉冲信号之后半个周期，PWM电路根据脉冲产生第一或第二PWM信号信号和来自比较器的输出信号，从而打开/关闭开关。

2. 发明授权

US07915875B2 Current-mode controlled DC-DC converter 有权
标题翻译：电流模式控制DC-DC转换器
公开(公告)号：US07915875B2
公开(公告)日：2011-03-29
申请号：US12250839
申请日：2008-10-14
申请人： Hideki Asuke , Hideharu Takano , Masaki Kanazawa , Mamoru Tsuruya , Masayoshi Yamamoto , Hiroyuki Horii , Shigeyuki Funabiki
发明人： Hideki Asuke , Hideharu Takano , Masaki Kanazawa , Mamoru Tsuruya , Masayoshi Yamamoto , Hiroyuki Horii , Shigeyuki Funabiki
IPC分类号： G05F1/24 , G05F1/40
CPC分类号： H02M3/1584 , H02M2001/0064
摘要： A current-mode controlled DC-DC converter includes a comparator comparing a first or second current detection signal with a first or second reference current that is based on an error voltage of a voltage detection signal, a pulse generator generating a first pulse signal whose ON time is longer than an interval between when the second current detection signal reaches a minimum value and when the second current detection signal reaches the second reference current, a pulse generator generating a second pulse signal whose ON time is longer than an interval between when the first current detection signal reaches a minimum value and when the first current detection signal reaches the first reference current, the second pulse signal being behind the first pulse signal by a half period, and a PWM circuit generating a first or second PWM signal according to the pulse signal and an output signal from the comparator, thereby turning on/off a switch.
摘要翻译：电流模式控制的DC-DC转换器包括比较第一或第二电流检测信号与基于电压检测信号的误差电压的第一或第二参考电流的比较器，脉冲发生器产生第一脉冲信号，其ON 时间长于当第二电流检测信号达到最小值之间的间隔和当第二电流检测信号达到第二参考电流时的间隔;脉冲发生器，其生成第二脉冲信号，其接通时间长于第一电流检测信号之间的间隔电流检测信号达到最小值，并且当第一电流检测信号达到第一参考电流时，第二脉冲信号在第一脉冲信号之后半个周期，PWM电路根据脉冲产生第一或第二PWM信号信号和来自比较器的输出信号，从而打开/关闭开关。

3. 发明申请

US20090262557A1 BI-DIRECTIONAL DC-DC CONVERTER 有权
标题翻译：双向直流 - 直流转换器
公开(公告)号：US20090262557A1
公开(公告)日：2009-10-22
申请号：US12250843
申请日：2008-10-14
申请人： Hideki Asuke , Hideharu Takano , Masaki Kanazawa , Mamoru Tsuruya , Masayoshi Yamamoto , Hirotaka Hara , Shigeyuki Funabiki
发明人： Hideki Asuke , Hideharu Takano , Masaki Kanazawa , Mamoru Tsuruya , Masayoshi Yamamoto , Hirotaka Hara , Shigeyuki Funabiki
IPC分类号： H02M3/335
CPC分类号： H02M3/1584 , H02M3/1582 , Y10T307/702 , Y10T307/735
摘要： A bi-directional DC-DC converter includes a first series circuit connected to ends of a first DC power source and including a first winding of a first reactor and a first switch; a second series circuit connected to ends of the first switch and including a second winding of the first reactor, a second reactor, a second switch, a third switch, and a second DC power source; a third series circuit connected to the ends of the first switch and including a fourth switch and the second DC power source; and a control circuit configured to turn on/off the switches and thereby carry out step-up and step-down operations between the first and second DC power sources.
摘要翻译：双向DC-DC转换器包括连接到第一直流电源的端部并包括第一电抗器和第一开关的第一绕组的第一串联电路; 连接到第一开关的端部并且包括第一反应器的第二绕组，第二反应器，第二开关，第三开关和第二DC电源的第二串联电路; 连接到第一开关的端部并包括第四开关和第二DC电源的第三串联电路; 以及控制电路，被配置为接通/断开开关，从而在第一和第二DC电源之间执行升压和降压操作。

4. 发明授权

US07638900B2 Bi-directional DC-DC converter 有权
标题翻译：双向DC-DC转换器
公开(公告)号：US07638900B2
公开(公告)日：2009-12-29
申请号：US12250843
申请日：2008-10-14
申请人： Hideki Asuke , Hideharu Takano , Masaki Kanazawa , Mamoru Tsuruya , Masayoshi Yamamoto , Hirotaka Hara , Shigeyuki Funabiki
发明人： Hideki Asuke , Hideharu Takano , Masaki Kanazawa , Mamoru Tsuruya , Masayoshi Yamamoto , Hirotaka Hara , Shigeyuki Funabiki
IPC分类号： H02J1/00
CPC分类号： H02M3/1584 , H02M3/1582 , Y10T307/702 , Y10T307/735
摘要： A bi-directional DC-DC converter includes a first series circuit connected to ends of a first DC power source and including a first winding of a first reactor and a first switch; a second series circuit connected to ends of the first switch and including a second winding of the first reactor, a second reactor, a second switch, a third switch, and a second DC power source; a third series circuit connected to the ends of the first switch and including a fourth switch and the second DC power source; and a control circuit configured to turn on/off the switches and thereby carry out step-up and step-down operations between the first and second DC power sources.
摘要翻译：双向DC-DC转换器包括连接到第一直流电源的端部并包括第一电抗器和第一开关的第一绕组的第一串联电路; 连接到第一开关的端部并且包括第一反应器的第二绕组，第二反应器，第二开关，第三开关和第二DC电源的第二串联电路; 连接到第一开关的端部并包括第四开关和第二DC电源的第三串联电路; 以及控制电路，被配置为接通/断开开关，从而在第一和第二DC电源之间执行升压和降压操作。

5. 发明申请

US20110133561A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110133561A1
公开(公告)日：2011-06-09
申请号：US13055550
申请日：2009-06-19
申请人： Masaki Kanazawa , Hideki Asuke
发明人： Masaki Kanazawa , Hideki Asuke
IPC分类号： H02J1/00
CPC分类号： H01L23/3121 , H01F27/2804 , H01F2027/2819 , H01L23/552 , H01L23/645 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/45144 , H01L2224/48247 , H01L2224/49171 , H01L2224/49175 , H01L2924/00014 , H01L2924/01079 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/3025 , Y10T307/675 , H01L2924/00 , H01L2224/05599 , H01L2924/00012
摘要： A semiconductor device (10) includes: an base substance (15) having a ferromagnetic material; a first semiconductor chip (11) and a second semiconductor chip (12) installed on the base substance (15); a first coil (131) installed on the base substance (15) and electrically connected to the first semiconductor chip (11); a second coil (132) installed on the first coil (131), electromagnetically connected to the first coil (131) and electrically connected to the second semiconductor chip (12); a transformer assembly (18) made of a ferromagnetic material and installed on the base substance (15), and a sealing body. The transformer assembly (18) includes a first core section (181), a first side shield section (182), and a first upper shield section (183).
摘要翻译：半导体器件（10）包括：具有铁磁材料的基底物质（15）第一半导体芯片（11）和安装在所述基础物质（15）上的第二半导体芯片; 第一线圈（131），其安装在所述基底物质（15）上并电连接到所述第一半导体芯片（11）; 安装在第一线圈（131）上的电磁连接到第一线圈（131）并电连接到第二半导体芯片（12）的第二线圈（132）; 由铁磁材料制成并安装在基体（15）上的变压器组件（18）和密封体。变压器组件（18）包括第一芯部（181），第一侧屏蔽部分（182）和第一上屏蔽部分（183）。

6. 发明授权

US08154118B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08154118B2
公开(公告)日：2012-04-10
申请号：US13055550
申请日：2009-06-19
申请人： Masaki Kanazawa , Hideki Asuke
发明人： Masaki Kanazawa , Hideki Asuke
IPC分类号： H01L23/00
CPC分类号： H01L23/3121 , H01F27/2804 , H01F2027/2819 , H01L23/552 , H01L23/645 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/45144 , H01L2224/48247 , H01L2224/49171 , H01L2224/49175 , H01L2924/00014 , H01L2924/01079 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/3025 , Y10T307/675 , H01L2924/00 , H01L2224/05599 , H01L2924/00012
摘要： A semiconductor device (10) includes: an base substance (15) having a ferromagnetic material; a first semiconductor chip (11) and a second semiconductor chip (12) installed on the base substance (15); a first coil (131) installed on the base substance (15) and electrically connected to the first semiconductor chip (11); a second coil (132) installed on the first coil (131), electromagnetically connected to the first coil (131) and electrically connected to the second semiconductor chip (12); a transformer assembly (18) made of a ferromagnetic material and installed on the base substance (15), and a sealing body. The transformer assembly (18) includes a first core section (181), a first side shield section (182), and a first upper shield section (183).
摘要翻译：半导体器件（10）包括：具有铁磁材料的基底物质（15）第一半导体芯片（11）和安装在所述基础物质（15）上的第二半导体芯片; 第一线圈（131），其安装在所述基底物质（15）上并电连接到所述第一半导体芯片（11）; 安装在第一线圈（131）上的电磁连接到第一线圈（131）并电连接到第二半导体芯片（12）的第二线圈（132）; 由铁磁材料制成并安装在基体（15）上的变压器组件（18）和密封体。变压器组件（18）包括第一芯部（181），第一侧屏蔽部（182）和第一上屏蔽部（183）。

7. 发明授权

US07158360B2 Solenoid drive circuit 有权
标题翻译：电磁驱动电路
公开(公告)号：US07158360B2
公开(公告)日：2007-01-02
申请号：US10942589
申请日：2004-09-15
申请人： Kiyokatsu Satoh , Masaki Kanazawa
发明人： Kiyokatsu Satoh , Masaki Kanazawa
IPC分类号： H01H9/00
CPC分类号： H01H47/325 , H01F7/1844 , H01F2007/1888 , H01H47/002
摘要： A solenoid drive circuit includes a control circuit which comprises a detector with a resistor for discerning current flow therethrough to produce electric signals that correspond to level of current flow through a solenoid connected to the resistor; an amplifier for amplifying the electric signals from the resistor; and an integrator for integrating the amplified output from the amplifier.
摘要翻译：螺线管驱动电路包括控制电路，该控制电路包括具有用于识别通过其中的电流的电阻器的检测器，以产生对应于通过连接到电阻器的螺线管的电流的电流水平的电信号; 用于放大来自电阻器的电信号的放大器; 以及用于对来自放大器的放大输出进行积分的积分器。

8. 发明申请

US20050105239A1 Solenoid drive circuit 有权
标题翻译：电磁驱动电路
公开(公告)号：US20050105239A1
公开(公告)日：2005-05-19
申请号：US10942589
申请日：2004-09-15
申请人： Kiyokatsu Satoh , Masaki Kanazawa
发明人： Kiyokatsu Satoh , Masaki Kanazawa
IPC分类号： H01F7/18 , H01H47/00 , H01H47/32
CPC分类号： H01H47/325 , H01F7/1844 , H01F2007/1888 , H01H47/002
摘要： A solenoid drive circuit includes a control circuit 2 which comprises a detector 6 with a resistor 6a for discerning current flow therethrough to produce electric signals that correspond to level of current flow through a solenoid 4 connected to the resistor 6a; an amplifier 7 for amplifying the electric signals from the resistor 6a; and an integrator 8 for integrating the amplified output from the amplifier 7. As integrator 8 is reset each time a PWM controller 3 generates at least one of the successive drive signals S3, an operational comparator 5 receives the latest updated and integrated values S8 of relatively small amount from the integrator 8, easily and promptly compares the updated values S8 from the integrator 8 and an objective current values to produce a deviation of the integrated values S8 from the objective current value, and provides the PWM controller 3 with a command value S5 indicative of the deviation. As the PWM controller 3 provides the control terminal of a MOSFET 10 with the drive signals S3 of pulse width which corresponds to the command value S5 from the operational comparator 5, the current flow through the solenoid 4 can be controlled for accurate activation of the solenoid 4 in good responsiveness to current flow values through the solenoid 4.
摘要翻译：一个电磁驱动电路包括一个控制电路2，它包括一个具有电阻器6a的检测器6，用于识别通过其中的电流流动，产生对应于通过连接到电阻器6a的螺线管4的电流水平的电信号; 用于放大来自电阻器6a的电信号的放大器7; 以及用于积分放大器7的放大输出的积分器8.当每个PWM控制器3产生连续驱动信号S 3中的至少一个时，积分器8被复位，运算比较器5接收最新的更新和积分值S 8 从积分器8相对较少的量，容易且迅速地将积分器8的更新值S8与目标电流值进行比较，以产生积分值S8与目标电流值的偏差，并向PWM控制器3提供指示偏差的指令值S 5。由于PWM控制器3向MOSFET10的控制端提供与来自运算比较器5的与指令值S5相对应的脉冲宽度的驱动信号S 3，所以可以控制通过螺线管4的电流以精确地激活螺线管4对通过螺线管4的电流流动值具有良好的响应性。

9. 发明授权

US08206198B2 Wafer grinding machine and wafer grinding method 有权
标题翻译：晶圆磨机和晶圆磨削法
公开(公告)号：US08206198B2
公开(公告)日：2012-06-26
申请号：US12337546
申请日：2008-12-17
申请人： Masaki Kanazawa
发明人： Masaki Kanazawa
IPC分类号： B24B1/00
CPC分类号： B24B7/228 , B24B55/00 , H01L21/304
摘要： A wafer grinding machine and a wafer grinding method are disclosed. A barrier (60) is arranged around a holding unit (29) to hold at least a wafer (40) with a film (11) attached on the front surface (41) thereof and with the back surface (42) thereof directed upward. The upper surface (61) of the barrier unit is ground to the position between the back surface of the wafer held by the holding unit and the boundary between the wafer and the film. Then, the wafer is ground while being held with the back surface thereof up by the holding unit. As a result, the film is prevented from coming off from the wafer at the time of grinding the back surface of the wafer. Further, when the wafer is ground, a fluid may be supplied into the gap between the barrier unit and the outer peripheral portion of the wafer held by the holding unit.
摘要翻译：公开了晶片研磨机和晶片研磨方法。阻挡件（60）围绕保持单元（29）布置以至少保持具有附接在其前表面（41）上的膜（11）并且其后表面（42）指向的晶片（40）。阻挡单元的上表面（61）被研磨到由保持单元保持的晶片的背面与晶片与膜之间的边界之间的位置。然后，晶片被保持单元保持在其后表面的同时被研磨。结果，在研磨晶片的背面时，防止膜从晶片脱落。此外，当晶片被研磨时，可以将流体供应到阻挡单元与由保持单元保持的晶片的外周部之间的间隙中。

10. 发明授权

US07880222B2 Semiconductor device having plural regions and elements with varying areas depending on the region 有权
标题翻译：具有取决于区域的多个区域和具有不同区域的元件的半导体器件
公开(公告)号：US07880222B2
公开(公告)日：2011-02-01
申请号：US11587881
申请日：2006-02-17
申请人： Katsuyuki Torii , Masaki Kanazawa
发明人： Katsuyuki Torii , Masaki Kanazawa
IPC分类号： H01L29/66
CPC分类号： H01L25/071 , H01L25/074 , H01L25/16 , H01L29/7395 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device 10 includes a first transistor 11 placed on a substrate 16, a second transistor 12 placed on the first transistor 11 via a heat radiation layer 17, a third transistor 13 placed on the substrate 16, and a fourth transistor 14 placed on the third transistor 11 via a heat radiation layer 17. The first transistor 11 has a first region corresponding to a region where the second transistor is placed, and a second region which is formed so as to surround the first region and in which the rate of area occupied by the emitter region in the base region is higher than in the first region. Likewise the first transistor 11, the third transistor 13 has a region in which the rate of area occupied by the emitter region in the base region is varied.
摘要翻译：半导体器件10包括放置在基板16上的第一晶体管11，经由散热层17放置在第一晶体管11上的第二晶体管12，放置在基板16上的第三晶体管13和放置在基板16上的第四晶体管14。第一晶体管11具有与放置第二晶体管的区域对应的第一区域和形成为围绕第一区域的第二区域，并且其中区域的面积由基区域中的发射极区域占据高于第一区域。类似地，第一晶体管11，第三晶体管13具有其中基极区域中的发射极区域占据的面积的比率变化的区域。

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