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1. 发明授权

US09632386B2 Fine particles for image display, method for producing the same, electrophoretic dispersion liquid, and image display device 有权
公开(公告)号：US09632386B2
公开(公告)日：2017-04-25
申请号：US13701280
申请日：2011-06-02
申请人： Hidehiko Takanashi , Yuriko Kaino , Aya Shuto , Ken Kobayashi , Shinichiro Yamada , Seiichiro Tabata , Hironori Iida , Machiko Minatoya , Shun Yamanoi , Masakazu Mitsugi
发明人： Hidehiko Takanashi , Yuriko Kaino , Aya Shuto , Ken Kobayashi , Shinichiro Yamada , Seiichiro Tabata , Hironori Iida , Machiko Minatoya , Shun Yamanoi , Masakazu Mitsugi
IPC分类号： A61K47/02 , B32B5/18 , C01B31/08 , G02F1/167 , C09C1/48 , B82Y30/00
CPC分类号： G02F1/167 , B82Y30/00 , C09C1/48 , G02F2001/1678 , G02F2201/124 , G02F2202/36
摘要： The present inventions relate to fine particles for image display having excellent properties and displaying images in black. The fine particles for image display are dispersed (suspended) in an electrophoretic dispersion liquid sealed between two opposing substrates and contain porous carbon materials having values of specific surface area determined by the nitrogen BET method of not less than 100 m2/g and pore volume determined by the MP method of not less than 0.1 cm3/g or those having values of specific surface area determined by the nitrogen BET method of not less than 100 m2/g and at least one peak at not more than 10 nm in pore size distribution obtained by the non-localized density functional theory method.

2. 发明申请

US20130250398A1 FINE PARTICLES FOR IMAGE DISPLAY, METHOD FOR PRODUCING THE SAME, ELECTROPHORETIC DISPERSION LIQUID, AND IMAGE DISPLAY DEVICE 有权
标题翻译：用于图像显示的精细颗粒，其制造方法，电泳分散液体和图像显示装置
公开(公告)号：US20130250398A1
公开(公告)日：2013-09-26
申请号：US13701280
申请日：2011-06-02
申请人： Hidehiko Takanashi , Yuriko Kaino , Aya Shuto , Ken Kobayashi , Shinichiro Yamada , Seiichiro Tabata , Hironori Iida , Machiko Minatoya , Shun Yamanoi , Masakazu Mitsugi
发明人： Hidehiko Takanashi , Yuriko Kaino , Aya Shuto , Ken Kobayashi , Shinichiro Yamada , Seiichiro Tabata , Hironori Iida , Machiko Minatoya , Shun Yamanoi , Masakazu Mitsugi
IPC分类号： G02F1/167 , C09C1/48
CPC分类号： G02F1/167 , B82Y30/00 , C09C1/48 , G02F2001/1678 , G02F2201/124 , G02F2202/36
摘要： Fine particles for image display having excellent properties and displaying images in black on the basis of electrophoresis are provided.Fine particles for image display are dispersed (suspended) in an electrophoretic dispersion liquid sealed between two opposing substrates and contain porous carbon materials having values of specific surface area determined by the nitrogen BET method of not less than 100 m2/g and pore volume determined by the MP method of not less than 0.1 cm3/g or those having values of specific surface area determined by the nitrogen BET method of not less than 100 m2/g and at least one peak at not more than 10 nm in pore size distribution obtained by the non-localized density functional theory method.
摘要翻译：提供具有优异性能的图像显示微粒和基于电泳显示黑色图像。用于图像显示的细颗粒被分散（悬浮）在密封在两个相对的基板之间的电泳分散液中，并且包含通过氮BET法测定的比表面积值不小于100m 2 / g的多孔碳材料，并且孔容积由不小于0.1cm 3 / g的MP法或通过氮BET法测定的比表面积值不小于100m 2 / g和孔径分布中至少一个峰值在10nm以下的MP法得到的孔径分布非局部密度泛函理论方法。

3. 发明申请

US20110310465A1 ELECTROPHORETIC DEVICE, DISPLAY, AND ELECTRONIC APPARATUS 审中-公开
标题翻译：电子设备，显示器和电子设备
公开(公告)号：US20110310465A1
公开(公告)日：2011-12-22
申请号：US13150939
申请日：2011-06-01
申请人： Hidehiko Takanashi , Ken Kobayashi , Yuriko Kaino , Aya Shuto
发明人： Hidehiko Takanashi , Ken Kobayashi , Yuriko Kaino , Aya Shuto
IPC分类号： G02F1/167
CPC分类号： G02F1/167 , D04H1/728 , G02F2202/36 , G02F2203/02
摘要： An electrophoretic device includes an insulating liquid, an electrophoretic particle in the insulating liquid, and a porous layer in the insulating liquid. The porous layer includes a fibrous structure that includes a non-electrophoretic particle having an optical reflective property different from that of the electrophoretic particle.
摘要翻译：电泳装置包括绝缘液体，绝缘液体中的电泳粒子和绝缘液体中的多孔层。多孔层包括具有不同于电泳粒子的光学反射性的非电泳粒子的纤维结构体。

4. 发明申请

US20100197102A1 FILM DEPOSITION METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 失效
标题翻译：薄膜沉积方法和半导体器件的制造方法
公开(公告)号：US20100197102A1
公开(公告)日：2010-08-05
申请号：US12694342
申请日：2010-01-27
申请人： Hirotaka Akao , Yuriko Kaino , Takahiro Kamei , Masaki Hara , Kenichi Kurihara
发明人： Hirotaka Akao , Yuriko Kaino , Takahiro Kamei , Masaki Hara , Kenichi Kurihara
IPC分类号： H01L21/336 , H01L21/31
CPC分类号： H01L21/28229 , C23C18/1212 , C23C18/122 , C23C18/1225 , C23C18/1295 , H01L21/02164 , H01L21/02255 , H01L21/02532 , H01L21/02628 , H01L21/02664 , H01L21/28211 , H01L27/1285 , H01L27/1292 , H01L29/6675
摘要： A film deposition method includes the steps of: coating a solution containing a polysilane compound on a substrate to form a coating film and then carrying out a first thermal treatment in an inert atmosphere, thereby forming the coating film into a silicon film; forming a coating film containing a polysilane compound on the silicon film and then carrying out a second thermal treatment in an inert atmosphere or a reducing atmosphere, thereby forming the coating film into a silicon oxide precursor film; and carrying out a third thermal treatment in an oxidizing atmosphere, thereby forming the silicon oxide precursor film into a silicon oxide film and simultaneously densifying the silicon film.
摘要翻译：膜沉积方法包括以下步骤：在基板上涂布含有聚硅烷化合物的溶液，形成涂膜，然后在惰性气氛中进行第一热处理，从而将涂膜形成硅膜; 在硅膜上形成含有聚硅烷化合物的涂膜，然后在惰性气氛或还原气氛中进行第二次热处理，从而将涂膜形成氧化硅前体膜; 并在氧化气氛中进行第三次热处理，从而将氧化硅前体膜形成为氧化硅膜，同时使硅膜致密化。

5. 发明申请

US20060198966A1 Method for forming a silicon-containing film 审中-公开
标题翻译：含硅膜的形成方法
公开(公告)号：US20060198966A1
公开(公告)日：2006-09-07
申请号：US11353624
申请日：2006-02-14
申请人： Yuriko Kaino , Takahiro Kamei
发明人： Yuriko Kaino , Takahiro Kamei
IPC分类号： C23C14/28
CPC分类号： H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L21/02628 , H01L21/02636
摘要： A method for forming a silicon-containing film on a surface of a substrate is described. In the method, a cyclopentasilane solution is filled in a cell to permit an inner wall surface of the cell and the cyclopentasilane solution to be in contact with each other. Subsequently, UV light is irradiated from a spot UV irradiator to cause the light to be irradiated on the cyclopentasilane solution in the vicinity of a region of an inner wall surface through a wall of the cell, thereby forming a silicon-containing film at the region. Thus, silicon-containing the film is formed without resorting to a thermal treatment by a reduced number of steps.
摘要翻译：描述了在基板的表面上形成含硅膜的方法。在该方法中，将环戊硅烷溶液填充到电池中，以允许电池的内壁表面和环戊硅烷溶液彼此接触。随后，从斑点紫外线照射器照射紫外线，使光通过电池的壁在内壁面的区域附近照射到环戊硅烷溶液上，从而在该区域形成含硅膜。因此，通过减少步骤的步骤，不需要借助于热处理来形成含硅的膜。

6. 发明授权

US07063890B2 Fine particle structure and optical medium 失效
标题翻译：细颗粒结构和光学介质
公开(公告)号：US07063890B2
公开(公告)日：2006-06-20
申请号：US10764735
申请日：2004-01-26
申请人： Atsushi Toda , Yuriko Kaino , Hirotaka Akao , Ko Ishimoto
发明人： Atsushi Toda , Yuriko Kaino , Hirotaka Akao , Ko Ishimoto
IPC分类号： B32B5/16
CPC分类号： G03B21/62 , G02B5/12 , G02F2201/50 , G02F2202/32 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/2998
摘要： Such a structure is to be provided in that in the case where a material, such as a protective film, is coated on a fine particle accumulated layer, such as a photonic crystal, penetration of the material into gaps among the fine particles is suppressed, whereby the mechanical strength against bending stress and tensile stress is improved, and peeling and breakage of the fine particle accumulated layer are suppressed, without adverse affect on the optical characteristics, such as reflection characteristics. The fine particle structure contains a visible light absorbing material absorbing visible light as a substrate, having accumulated thereon in this order silica fine particles having a particle diameter of 290 nm as a fine particle layer for reflecting red light, silica fine particles having a particle diameter of 240 nm as a fine particle layer for reflecting green light, and silica fine particles having a particle diameter of 210 nm as a fine particle layer for reflecting blue light, and further provided thereon a polymer layer or a gelatin layer containing a polymer having a size larger than the gaps among the fine particles. The optical medium, such as a reflective type screen, further contains a diffusion film on the polymer layer or the gelatin layer.
摘要翻译：要提供这样的结构，即在诸如保护膜的材料被涂覆在诸如光子晶体的细小颗粒聚集层上的情况下，材料渗透到细颗粒之间的间隙中被抑制，从而提高了抗弯曲应力和拉伸应力的机械强度，并且抑制了微粒聚集层的剥离和破裂，而不会对诸如反射特性的光学特性产生不利影响。细颗粒结构含有作为基板吸收可见光的可见光吸收材料，其上依次累积有粒径为290nm的二氧化硅微粒作为反射红光的微粒层，具有粒径的二氧化硅微粒为反射绿光的微粒子层，粒径为210nm的二氧化硅微粒作为用于反射蓝光的微粒层，并且还在其上设置聚合物层或含有聚合物的明胶层，所述聚合物层含有具有尺寸大于细颗粒之间的间隙。诸如反射型屏幕的光学介质还在聚合物层或明胶层上包含扩散膜。

7. 发明授权

US08394728B2 Film deposition method and manufacturing method of semiconductor device 失效
标题翻译：半导体器件的薄膜沉积方法和制造方法
公开(公告)号：US08394728B2
公开(公告)日：2013-03-12
申请号：US12694342
申请日：2010-01-27
申请人： Hirotaka Akao , Yuriko Kaino , Takahiro Kamei , Masaki Hara , Kenichi Kurihara
发明人： Hirotaka Akao , Yuriko Kaino , Takahiro Kamei , Masaki Hara , Kenichi Kurihara
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/28229 , C23C18/1212 , C23C18/122 , C23C18/1225 , C23C18/1295 , H01L21/02164 , H01L21/02255 , H01L21/02532 , H01L21/02628 , H01L21/02664 , H01L21/28211 , H01L27/1285 , H01L27/1292 , H01L29/6675
摘要： A film deposition method includes the steps of: coating a solution containing a polysilane compound on a substrate to form a coating film and then carrying out a first thermal treatment in an inert atmosphere, thereby forming the coating film into a silicon film; forming a coating film containing a polysilane compound on the silicon film and then carrying out a second thermal treatment in an inert atmosphere or a reducing atmosphere, thereby forming the coating film into a silicon oxide precursor film; and carrying out a third thermal treatment in an oxidizing atmosphere, thereby forming the silicon oxide precursor film into a silicon oxide film and simultaneously densifying the silicon film.
摘要翻译：膜沉积方法包括以下步骤：在基板上涂布含有聚硅烷化合物的溶液，形成涂膜，然后在惰性气氛中进行第一热处理，从而将涂膜形成硅膜; 在硅膜上形成含有聚硅烷化合物的涂膜，然后在惰性气氛或还原气氛中进行第二次热处理，从而将涂膜形成氧化硅前体膜; 并在氧化气氛中进行第三次热处理，从而将氧化硅前体膜形成为氧化硅膜，同时使硅膜致密化。

8. 发明申请

US20060145151A1 Metal complex of heterocyclic aromatic compound 失效
公开(公告)号：US20060145151A1
公开(公告)日：2006-07-06
申请号：US11368793
申请日：2006-03-06
申请人： Eriko Matsui , Yuriko Kaino , Toshiyuki Kunikiyo , Tatsushiro Hirata , Yoshifumi Mori
发明人： Eriko Matsui , Yuriko Kaino , Toshiyuki Kunikiyo , Tatsushiro Hirata , Yoshifumi Mori
IPC分类号： C07F1/10 , H01L29/08
CPC分类号： C07D207/32 , C07D207/323
摘要： A novel metal complex of a heterocyclic aromatic compound which shows a low activation energy, is stabilized structurally, is capable of modulation of the structure thereof, and capable of preferably functioning as a molecular device in technological fields. The metal complex of a heterocyclic aromatic compound comprises a transition metal (for example, silver ion) as a central atom, and basic ligands comprised of a 5-membered heterocyclic aromatic compound (for example, pyrrole rings), in which the position of the central atom can be changed by an internal factor such as transfer of an electric charge or by an external factor such as application of an electric field, a change in acidity of the surrounding environment, etc., whereby the number of atoms (or the number of electrons) relating to the coordination ability can be modulated, and, upon polymerization, the conformation can be modulated depending on the position of the central atom.

9. 发明授权

US07038025B2 Metal complexes of heterocyclic aromatic compounds 失效
标题翻译：杂环芳族化合物的金属络合物
公开(公告)号：US07038025B2
公开(公告)日：2006-05-02
申请号：US10468982
申请日：2002-12-18
申请人： Eriko Matsui , Yuriko Kaino , Toshiyuki Kunikiyo , Yoshifumi Mori , Tatsushiro Hirata
发明人： Eriko Matsui , Yuriko Kaino , Toshiyuki Kunikiyo , Yoshifumi Mori , Tatsushiro Hirata
IPC分类号： C09B45/00 , C07D207/00
CPC分类号： C07D207/32 , C07D207/323
摘要： A novel metal complex of a heterocyclic aromatic compound which shows a low activation energy, is stabilized structurally, is capable of modulation of the structure thereof, and capable of preferably functioning as a molecular device in technological fields. The metal complex of a heterocyclic aromatic compound comprises a transition metal (for example, silver ion) as a central atom, and basic ligands comprised of a 5-membered heterocyclic aromatic compound (for example, pyrrole rings), in which the position of the central atom can be changed by an internal factor such as transfer of an electric charge or by an external factor such as application of an electric field, a change in acidity of the surrounding environment, etc., whereby the number of atoms (or the number of electrons) relating to the coordination ability can be modulated, and, upon polymerization, the conformation can be modulated depending on the position of the central atom.
摘要翻译：显示低活化能的杂环芳族化合物的新型金属络合物在结构上是稳定的，能够调节其结构，并且能够优选在技术领域中用作分子装置。杂环芳族化合物的金属络合物包含作为中心原子的过渡金属（例如银离子）和由5元杂环芳族化合物（例如吡咯环）构成的碱性配体，其中，中心原子可以通过诸如电荷的转移或诸如施加电场的外部因素，周围环境的酸度变化等内部因素而改变，由此原子数（或数）的电子）可以调节，并且在聚合时，可以根据中心原子的位置来调节构象。

10. 发明申请

US20090263590A1 METHOD OF MANUFACTURING POLYSILANE-MODIFIED SILICON FINE WIRE AND METHOD OF FORMING SILICON FILM 审中-公开
标题翻译：制备多晶硅改性硅丝的方法及其形成硅胶膜的方法
公开(公告)号：US20090263590A1
公开(公告)日：2009-10-22
申请号：US12425882
申请日：2009-04-17
申请人： Yuriko Kaino , Maiko Kunita , Kenichi Kurihara , Takahiro Kamei
发明人： Yuriko Kaino , Maiko Kunita , Kenichi Kurihara , Takahiro Kamei
IPC分类号： C08J7/04 , C08G77/12 , C23C14/28
CPC分类号： C01B33/02 , H01L21/02532 , H01L21/02603 , H01L21/02664
摘要： A method of forming a silicon film capable of forming an excellent high-crystalline silicon film without heat treatment at high temperature is provided. A method of manufacturing a polysilane-modified silicon fine wire includes a step of: irradiating a mixed liquid including a silicon fine wire and a polysilane with light to bond the polysilane to a surface of the silicon fine wire.
摘要翻译：提供了一种形成能够在高温下不进行热处理而形成优异的高结晶硅膜的硅膜的方法。聚硅烷改性硅细丝的制造方法包括以下步骤：用光照射包含硅细丝和聚硅烷的混合液，将聚硅烷键合到硅细丝的表面。

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