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1. 发明授权

US06797068B1 Film forming unit 失效
标题翻译：成膜单元
公开(公告)号：US06797068B1
公开(公告)日：2004-09-28
申请号：US10049283
申请日：2002-02-11
申请人： Hideaki Yamasaki , Takashi Mochizuki , Susumu Arima , Yumiko Kawano
发明人： Hideaki Yamasaki , Takashi Mochizuki , Susumu Arima , Yumiko Kawano
IPC分类号： C23C1600
CPC分类号： C23C16/45521 , C23C16/45589 , C23C16/4585 , H01L21/68721 , H01L21/68735
摘要： A film-forming unit of the invention includes a processing container in which a vacuum can be created, a stage arranged in the processing container, on which an object to be processed is placed, a process-gas supplying means for supplying a process gas into the processing container, and a heating means for heating the object to be processed placed on the stage. A division wall surrounds a lateral side and a lower side of the stage. An inert gas is introduced into a stage-side region surrounded by the division wall, by an inert-gas supplying means. A gap-forming member is arranged in such a manner that its inner peripheral portion is arranged above a peripheral portion of the object to be processed placed on the stage via a gap and its outer peripheral portion is arranged above the division wall via a gap.
摘要翻译：本发明的成膜单元包括其中可以产生真空的处理容器，设置在处理容器中的待处理物体的阶段，用于将处理气体供应到处理气体供应装置处理容器和用于加热被放置在台架上的待处理物体的加热装置。分隔壁围绕台的侧面和下侧。通过惰性气体供给装置将惰性气体引入由分隔壁包围的载物台侧区域。间隙形成构件被布置成使得其内周部分经由间隙布置在待处理物体的周边部分上，并且其外周部分经由间隙布置在分隔壁的上方。

2. 发明授权

US06436203B1 CVD apparatus and CVD method 失效
标题翻译： CVD装置和CVD法
公开(公告)号：US06436203B1
公开(公告)日：2002-08-20
申请号：US09551393
申请日：2000-04-18
申请人： Takeshi Kaizuka , Takashi Horiuchi , Masami Mizukami , Takashi Mochizuki , Yumiko Kawano , Hideaki Yamasaki
发明人： Takeshi Kaizuka , Takashi Horiuchi , Masami Mizukami , Takashi Mochizuki , Yumiko Kawano , Hideaki Yamasaki
IPC分类号： B05D136
CPC分类号： C23C16/4481 , C23C16/18 , C23C16/20 , C23C16/45565 , C23C16/45572 , C23C16/45574
摘要： The present invention provides a CVD apparatus and a CVD method for use in forming an Al/Cu multilayered film. The Al/Cu multilayered film is formed in the CVD apparatus comprising a chamber for placing a semiconductor wafer W, a susceptor for mounting the semiconductor wafer W thereon, an Al raw material supply system for introducing a gasified Al raw material into the chamber and a Cu raw material supply system for introducing a gasified Cu raw material into the chamber. The Al/Cu multilayered film is formed by repeating a series of steps consisting of introducing the Al raw material gas into the chamber, depositing the Al film on the semiconductor wafer W by a CVD method, followed by generating a plasma in the chamber in which the Cu raw material gas has been introduced and depositing the Cu film on the semiconductor wafer W by a CVD method. The Al/Cu multilayered film thus obtained is subjected to a heating treatment (annealing), thereby forming a desired Al/Cu multilayered film.
摘要翻译：本发明提供了用于形成Al / Cu多层膜的CVD装置和CVD方法。在包括用于放置半导体晶片W的室，用于安装半导体晶片W的基座的CVD装置中形成Al / Cu多层膜，用于将气化的Al原料引入到室中的Al原料供给系统 Cu原料供给系统，用于将气化的Cu原料引入室中。 Al / Cu多层膜通过重复一系列步骤而形成，该步骤包括将Al原料气体引入室中，通过CVD法将Al膜沉积在半导体晶片W上，随后在室中产生等离子体，其中引入Cu原料气体并通过CVD法将Cu膜沉积在半导体晶片W上。对这样得到的Al / Cu多层膜进行加热处理（退火），形成所需的Al / Cu多层膜。

3. 发明授权

US06089184A CVD apparatus and CVD method 失效
公开(公告)号：US06089184A
公开(公告)日：2000-07-18
申请号：US92060
申请日：1998-06-05
申请人： Takeshi Kaizuka , Takashi Horiuchi , Masami Mizukami , Takashi Mochizuki , Yumiko Kawano , Hideaki Yamasaki
发明人： Takeshi Kaizuka , Takashi Horiuchi , Masami Mizukami , Takashi Mochizuki , Yumiko Kawano , Hideaki Yamasaki
IPC分类号： C23C16/18 , C23C16/20 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/00
CPC分类号： C23C16/4481 , C23C16/18 , C23C16/20 , C23C16/45565 , C23C16/45572 , C23C16/45574
摘要： The present invention provides a CVD apparatus and a CVD method for use in forming an Al/Cu multilayered film. The Al/Cu multilayered film is formed in the CVD apparatus comprising a chamber for placing a semiconductor wafer W, a susceptor for mounting the semiconductor wafer W thereon, an Al raw material supply system for introducing a gasified Al raw material into the chamber and a Cu raw material supply system for introducing a gasified Cu raw material into the chamber. The Al/Cu multilayered film is formed by repeating a series of steps consisting of introducing the Al raw material gas into the chamber, depositing the Al film on the semiconductor wafer W by a CVD method, followed by generating a plasma in the chamber in which the Cu raw material gas has been introduced and depositing the Cu film on the semiconductor wafer W by a CVD method. The Al/Cu multilayered film thus obtained is subjected to a heating treatment (annealing), thereby forming a desired Al/Cu multilayered film.

4. 发明授权

US6045862A CVD film forming method in which a film formation preventing gas is supplied in a direction from a rear surface of an object to be processed 失效
标题翻译：其中成膜防止气体沿着从被处理物体的后表面的方向供应的CVD膜形成方法
公开(公告)号：US6045862A
公开(公告)日：2000-04-04
申请号：US112452
申请日：1998-07-09
申请人： Masami Mizukami , Takashi Mochizuki , Yumiko Kawano
发明人： Masami Mizukami , Takashi Mochizuki , Yumiko Kawano
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , H01L21/205 , H01L21/285 , H01L21/31 , C23C16/04
CPC分类号： C23C16/45521 , C23C16/455 , C23C16/4585
摘要： A CVD film forming apparatus includes a susceptor, provided in a process chamber, having a surface of an area smaller than that of a wafer. A process gas is supplied to a top surface of the wafer mounted on the susceptor, thereby forming a CVD film on the top surface. A film formation preventing gas is supplied in a direction from the rear surface of the wafer toward a peripheral edge thereof at a flow rate which prevents the process gas from flowing to the rear surface of the wafer.
摘要翻译： CVD膜形成装置包括设置在处理室中的基座，其表面的面积小于晶片的表面。将工艺气体供给到安装在基座上的晶片的顶面，从而在上表面形成CVD膜。从晶片的后表面朝向其周边的方向以防止处理气体流向晶片背面的流量供给成膜防止气体。

5. 发明授权

US06210486B1 CVD film forming method in which a film formation preventing gas is supplied in a direction from a rear surface of an object to be processed 有权
标题翻译：其中成膜防止气体沿着从被处理物体的后表面的方向供应的CVD膜形成方法
公开(公告)号：US06210486B1
公开(公告)日：2001-04-03
申请号：US09499675
申请日：2000-02-08
申请人： Masami Mizukami , Takashi Mochizuki , Yumiko Kawano
发明人： Masami Mizukami , Takashi Mochizuki , Yumiko Kawano
IPC分类号： C23C1600
CPC分类号： C23C16/45521 , C23C16/455 , C23C16/4585
摘要： A CVD film forming apparatus includes a susceptor, provided in a process chamber, having a surface of an area smaller than that of a wafer. A process gas is supplied to a top surface of the wafer mounted on the susceptor, thereby forming a CVD film on the top surface. A film formation preventing gas is supplied in a direction from the rear surface of the wafer toward a peripheral edge thereof at a flow rate which prevents the process gas from flowing to the rear surface of the wafer.
摘要翻译： CVD膜形成装置包括设置在处理室中的基座，其表面的面积小于晶片的表面。将工艺气体供给到安装在基座上的晶片的顶面，从而在上表面形成CVD膜。从晶片的后表面朝向其周边的方向以防止处理气体流向晶片背面的流量供给成膜防止气体。

6. 发明授权

US08483154B2 Subcarrier allocation method and apparatus thereof 有权
标题翻译：子载波分配方法及其装置
公开(公告)号：US08483154B2
公开(公告)日：2013-07-09
申请号：US12735632
申请日：2008-12-16
申请人： Takashi Mochizuki
发明人： Takashi Mochizuki
IPC分类号： H04W4/00
CPC分类号： H04L5/0007 , H04L5/0023 , H04L5/003 , H04W72/06
摘要： A subcarrier allocation apparatus of the present invention includes: memory (12) that stores allocation patterns of links for allocation of subcarriers to the links; selector (11) that selects the subcarriers one by one in order; allocation evaluation value calculators (13) that are arranged in conjunction with cells of base stations and that calculate, for each allocation pattern, allocation evaluation values indicating desirability of allocation in the corresponding cells at the time of the allocation of the subcarrier currently selected by selector (11) to the links in accordance with the allocation pattern; adder (14) that adds, for each allocation pattern, the allocation evaluation values calculated by allocation evaluation value calculators (13); and maximum value detector (15) that detects a maximum value from the addition result of the allocation evaluation values added by adder (14) and that determines the allocation pattern, in which the addition result indicates the maximum value, as an optimal allocation pattern of the subcarrier currently selected by selector (11).
摘要翻译：本发明的子载波分配装置包括：存储器（12），其存储用于分配子载波到链路的链路的分配模式; 选择器（11），依次选择子载波; 分配评估值计算器（13），其与基站的小区一起被布置，并且针对每个分配模式，计算分配评估值，所述分配评估值指示在由选择器当前选择的子载波的分配时的相应小区中的分配的可取性（11）按照分配格局链接; 加法器（14），其针对每个分配模式添加由分配评估值计算器（13）计算的分配评估值; 以及最大值检测器（15），其从加法器（14）所添加的分配评估值的相加结果中检测最大值，并且将加法结果指示最大值的分配模式确定为最佳值分配模式当前由选择器（11）选择的子载波。

7. 发明申请

US20120215109A1 ULTRASONIC DIAGNOSTIC SYSTEM 审中-公开
标题翻译：超声诊断系统
公开(公告)号：US20120215109A1
公开(公告)日：2012-08-23
申请号：US13505140
申请日：2010-11-10
申请人： Naoto Kubota , Norihiro Koizumi , Hongen Liao , Takaharu Asano , Kazuhito Yuhashi , Mamoru Mitsuishi , Shin Ohnishi , Takashi Mochizuki , Ichiro Sakuma , Takashi Kadowaki
发明人： Naoto Kubota , Norihiro Koizumi , Hongen Liao , Takaharu Asano , Kazuhito Yuhashi , Mamoru Mitsuishi , Shin Ohnishi , Takashi Mochizuki , Ichiro Sakuma , Takashi Kadowaki
IPC分类号： A61B8/14 , A61B5/107
CPC分类号： A61B8/5223 , A61B5/4872 , A61B8/085 , A61B8/0858 , A61B8/14 , A61B8/4209 , A61B8/4227
摘要： When an amount of visceral fat is measured using ultrasonic waves during medical examination of metabolic syndrome, three contact positions are defined on the surface of the abdominal region, and three distances inside the living body are measured by bringing a probe into contact with the surface of the abdominal region at the contact positions. Specifically, three measurement paths having a starting point at the center of the descending aorta are set, and the distances from the center to a surface of the fat layer adjacent to the surface of the body (inner surface of the subcutaneous layer) in the measurement paths are observed. An approximate area of a visceral fat region can be determined from the three distances and two angles defined by the three measurement paths, and an index value is calculated on the basis of the area. A probe holder having three holding portions is desirably used.
摘要翻译：当在代谢综合征的体格检查期间使用超声波测量内脏脂肪的量时，在腹部区域的表面上限定三个接触位置，并且通过使探针与表面接触来测量活体内的三个距离在接触位置的腹部区域。具体而言，设定在下降主动脉中心具有起点的三个测量路径，并且测量与测量中的与身体表面（皮下层的内表面）相邻的脂肪层的中心到表面的距离观察路径。可以从由三个测量路径定义的三个距离和两个角度确定内脏脂肪区域的近似区域，并且基于面积计算指数值。期望使用具有三个保持部的探针保持器。

8. 发明申请

US20100220663A1 COMMUNICATIONS SYSTEM AND METHOD 审中-公开
标题翻译：通信系统与方法
公开(公告)号：US20100220663A1
公开(公告)日：2010-09-02
申请号：US11917143
申请日：2006-06-06
申请人： Mamoru Sawahashi , Kenichi Higuchi , Hiroyuki Atarashi , Takashi Mochizuki , Mitsuyuki Nakamura , Hiroyuki Seki
发明人： Mamoru Sawahashi , Kenichi Higuchi , Hiroyuki Atarashi , Takashi Mochizuki , Mitsuyuki Nakamura , Hiroyuki Seki
IPC分类号： H04W72/00
CPC分类号： H04L1/0003 , H04L1/0009 , H04L1/0016 , H04L1/0021 , H04L1/0026 , H04L1/1671 , H04W52/262 , H04W52/325 , H04W72/082
摘要： A disclosed radio communications apparatus adaptively controls a modulation method and coding rate (MCS) of a data channel in accordance with received channel quality information (CQI). This apparatus includes a first data table indicating a first corresponding relationship of the MCS with respect to the CQI; a second data table indicating a second corresponding relationship of transmission power of a control channel with respect to the CQI; a first selection portion that accesses the first data table so as to select the MCS of the data channel in accordance with the received CQI; a second selection portion that accesses the second data table so as to select the transmission power of the control channel in accordance with the received CQI; and a transmission portion that transmits the data channel in accordance with the selected MCS and the control channel at the selected transmission power.
摘要翻译：所公开的无线通信装置根据接收到的信道质量信息（CQI）自适应地控制数据信道的调制方式和编码率（MCS）。该装置包括表示MCS相对于CQI的第一对应关系的第一数据表; 指示控制信道相对于CQI的发送功率的第二对应关系的第二数据表; 第一选择部分，其访问第一数据表，以便根据接收到的CQI来选择数据信道的MCS; 第二选择部，其访问所述第二数据表，以便根据所接收的CQI来选择所述控制信道的发送功率; 以及发送部，其根据所选择的MCS和控制信道以所选择的发送功率发送数据信道。

9. 发明申请

US20070025326A1 Adaptive transmission timing control method, wireless communication system and wireless communication device 有权
标题翻译：自适应传输定时控制方法，无线通信系统和无线通信设备
公开(公告)号：US20070025326A1
公开(公告)日：2007-02-01
申请号：US11493445
申请日：2006-07-26
申请人： Shingo Kikuchi , Takashi Mochizuki
发明人： Shingo Kikuchi , Takashi Mochizuki
IPC分类号： H04J3/06
CPC分类号： H04W56/0045 , H04W24/00
摘要： In a method for adaptive transmission timing control, the overlooking of a base path at the side of the base station that occurs when the transmission timing offset amount changes to the extent of falling outside the current delay-profile calculation range, and the side of the mobile station fails to demodulate the control information that contains the transmission timing offset amount, is prevented. A limit is put on the transmission timing offset amount applied in a single transmission timing control iteration. Together with setting the transmission timing offset value such that the main component of the delay profile calculated from the pilot signal transmitted with offset transmission timing falls within the time range of when the current delay profile was calculated, the time range for calculating the next delay profile is shifted such that a delay profile calculated from the pilot signal transmitted with offset transmission timing falls within the shifted range, starting at the earliest component.
摘要翻译：在自适应发送定时控制的方法中，当发送定时偏移量变化到超出当前延迟轮廓计算范围的程度时，忽视基站侧的基本路径，移动台无法解调包含发送定时偏移量的控制信息。对在单个传输定时控制迭代中应用的传输定时偏移量进行限制。与设定发送定时偏移值一起设置由偏移发送定时发送的导频信号计算出的延迟分布的主要成分落在当前延迟分布图的时间范围内，计算下一个延迟分布的时间范围被移位，使得从偏移发送定时发送的导频信号计算出的延迟分布落在从最早分量开始的移位范围内。

10. 发明申请

US20050152098A1 Capacitor, circuit board with built-in capacitor and method of manufacturing the same 失效
公开(公告)号：US20050152098A1
公开(公告)日：2005-07-14
申请号：US11031812
申请日：2005-01-07
申请人： Hideaki Sakaguchi , Mitsutoshi Higashi , Takashi Mochizuki
发明人： Hideaki Sakaguchi , Mitsutoshi Higashi , Takashi Mochizuki
IPC分类号： H01G9/028 , H01G9/00 , H01G9/02 , H05K1/16 , H05K3/46
CPC分类号： H01G9/028 , H05K1/162 , H05K3/4602 , H05K2201/09509 , Y10T29/417
摘要： In a capacitor 10, a first electrode 21, a valve metal layer 22, a dielectric layer 23, a chemical polymerization film 24 (a first solid electrolytic layer), a conductive organic material layer 61, an electrolytic polymerization film 25 (a second solid electrolytic layer) and a second electrode 31 are provided on a base material 11, and the conductive organic material layer 61 is obtained by applying and caking a paste-like conductive organic material 60 onto the chemical polymerization film 24.

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