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1. 发明授权

US08603733B2 Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method 有权
标题翻译：图案形成方法，图案形成方法中使用的抗蚀剂组合物，显影剂和漂洗溶液
公开(公告)号：US08603733B2
公开(公告)日：2013-12-10
申请号：US13196530
申请日：2011-08-02
申请人： Shinji Tarutani , Hideaki Tsubaki , Kazuyoshi Mizutani , Kenji Wada , Wataru Hoshino
发明人： Shinji Tarutani , Hideaki Tsubaki , Kazuyoshi Mizutani , Kenji Wada , Wataru Hoshino
IPC分类号： G03F7/00 , G03F7/004 , G03F7/32 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/325 , G03F7/40
摘要： A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.
摘要翻译：一种图案形成方法，包括施加抗蚀剂组合物的步骤，所述抗蚀剂组合物在负光谱显影剂中的溶解度随着光化射线或辐射的照射而降低，并且其含有具有脂环族烃结构和分散性为1.7以下并且能够增加的树脂通过酸的作用的极性，曝光步骤和使用负色调显影剂的显影步骤; 用于该方法的抗蚀剂组合物; 并且提供了用于该方法的显影剂和冲洗溶液，由此可以形成线边缘粗糙度降低且尺寸均匀性高的图案。

2. 发明授权

US08034547B2 Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method 有权
标题翻译：图案形成方法，图案形成方法中使用的抗蚀剂组合物，图案形成方法中使用的负显影液和用于图案形成方法的负显影用漂洗溶液
公开(公告)号：US08034547B2
公开(公告)日：2011-10-11
申请号：US12145151
申请日：2008-06-24
申请人： Hideaki Tsubaki , Shinji Tarutani , Kazuyoshi Mizutani , Kenji Wada , Wataru Hoshino
发明人： Hideaki Tsubaki , Shinji Tarutani , Kazuyoshi Mizutani , Kenji Wada , Wataru Hoshino
IPC分类号： G03F7/30
CPC分类号： G03F7/0397 , G03F7/325 , Y10S430/106 , Y10S430/111
摘要： A pattern forming method includes (a) coating a substrate with a resist composition including a resin that includes a repeating unit represented by a following general formula (NGH-1), and, by the action of an acid, increases the polarity and decreases the solubility in a negative developing solution; (b) exposing; and (d) developing with a negative developing solution: wherein RNGH1 represents a hydrogen atom or an alkyl group; and RNGH2 to RNGH4 each independently represents a hydrogen atom or a hydroxyl group, provided that at least one of RNGH2 to RNGH4 represents a hydroxyl group.
摘要翻译：图案形成方法包括：（a）用包含由以下通式（NGH-1）表示的重复单元的树脂的抗蚀剂组合物涂布基材，并且通过酸的作用增加极性，并降低在负显影液中的溶解度; （b）曝光; 和（d）用负显影液显影：其中RNGH1表示氢原子或烷基; 并且RNGH 2至RNGH 4各自独立地表示氢原子或羟基，条件是RNGH 2至RNGH 4中的至少一个表示羟基。

3. 发明授权

US08017304B2 Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method 有权
标题翻译：图案形成方法，图案形成方法中使用的抗蚀剂组合物，显影剂和漂洗溶液
公开(公告)号：US08017304B2
公开(公告)日：2011-09-13
申请号：US12578520
申请日：2009-10-13
申请人： Shinji Tarutani , Hideaki Tsubaki , Kazuyoshi Mizutani , Kenji Wada , Wataru Hoshino
发明人： Shinji Tarutani , Hideaki Tsubaki , Kazuyoshi Mizutani , Kenji Wada , Wataru Hoshino
IPC分类号： G03F7/00 , G03F7/32 , G03F7/004 , G03F7/20
CPC分类号： G03F7/40 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/325
摘要： A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.
摘要翻译：一种图案形成方法，包括施加抗蚀剂组合物的步骤，所述抗蚀剂组合物在负光谱显影剂中的溶解度随着光化射线或辐射的照射而降低，并且其含有具有脂环族烃结构和分散性为1.7以下并且能够增加的树脂通过酸的作用的极性，曝光步骤和使用负色调显影剂的显影步骤; 用于该方法的抗蚀剂组合物; 并且提供了用于该方法的显影剂和冲洗溶液，由此可以形成线边缘粗糙度降低且尺寸均匀性高的图案。

4. 发明申请

US20100040972A1 PATTERN FORMING METHOD, AND RESIST COMPOSITION, DEVELOPER AND RINSING SOLUTION USED IN THE PATTERN FORMING METHOD 有权
标题翻译：图案形成方法和耐蚀组合物，图案形成方法中使用的开发者和研磨溶液
公开(公告)号：US20100040972A1
公开(公告)日：2010-02-18
申请号：US12578520
申请日：2009-10-13
申请人： Shinji TARUTANI , Hideaki Tsubaki , Kazuyoshi Mizutani , Kenji Wada , Wataru Hoshino
发明人： Shinji TARUTANI , Hideaki Tsubaki , Kazuyoshi Mizutani , Kenji Wada , Wataru Hoshino
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/40 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/325
摘要： A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.
摘要翻译：一种图案形成方法，包括施加抗蚀剂组合物的步骤，所述抗蚀剂组合物在负光谱显影剂中的溶解度随着光化射线或辐射的照射而降低，并且其含有具有脂环族烃结构和分散性为1.7以下并且能够增加的树脂通过酸的作用的极性，曝光步骤和使用负色调显影剂的显影步骤; 用于该方法的抗蚀剂组合物; 并且提供了用于该方法的显影剂和冲洗溶液，由此可以形成线边缘粗糙度降低且尺寸均匀性高的图案。

5. 发明授权

US08241840B2 Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method 有权
标题翻译：图案形成方法，图案形成方法中使用的抗蚀剂组合物，图案形成方法中使用的负显影液和用于图案形成方法的负显影用漂洗溶液
公开(公告)号：US08241840B2
公开(公告)日：2012-08-14
申请号：US12825088
申请日：2010-06-28
申请人： Hideaki Tsubaki , Shinji Tarutani , Kazuyoshi Mizuyoshi , Kenji Wada , Wataru Hoshino
发明人： Hideaki Tsubaki , Shinji Tarutani , Kazuyoshi Mizuyoshi , Kenji Wada , Wataru Hoshino
IPC分类号： G03F7/30 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/325 , Y10S430/106 , Y10S430/111
摘要： A pattern forming method includes (a) coating a substrate with a resist composition including a resin that includes a repeating unit represented by a following general formula (NGH-1), and, by the action of an acid, increases the polarity and decreases the solubility in a negative developing solution; (b) exposing; and (d) developing with a negative developing solution: wherein RNGH1 represents a hydrogen atom or an alkyl group; and RNGH2 to RNGH4 each independently represents a hydrogen atom or a hydroxyl group, provided that at least one of RNGH2 to RNGH4 represents a hydroxyl group.
摘要翻译：图案形成方法包括：（a）用包含由以下通式（NGH-1）表示的重复单元的树脂的抗蚀剂组合物涂布基材，并且通过酸的作用增加极性，并降低在负显影液中的溶解度; （b）曝光; 和（d）用负显影液显影：其中RNGH1表示氢原子或烷基; 并且RNGH 2至RNGH 4各自独立地表示氢原子或羟基，条件是RNGH 2至RNGH 4中的至少一个表示羟基。

6. 发明申请

US20090017400A1 PATTERN FORMING METHOD 审中-公开
标题翻译：图案形成方法
公开(公告)号：US20090017400A1
公开(公告)日：2009-01-15
申请号：US12140119
申请日：2008-06-16
申请人： Shinji Tarutani , Kenji Wada , Hideaki Tsubaki
发明人： Shinji Tarutani , Kenji Wada , Hideaki Tsubaki
IPC分类号： G03F7/20
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/2022 , G03F7/2041
摘要： A pattern forming method, includes: exposing a resist film with actinic rays or radiation a plurality of times; and heating the resist film at a first temperature in at least one interval between the exposures.
摘要翻译：一种图案形成方法，包括：用光化射线或辐射多次曝光抗蚀剂膜; 以及在所述曝光之间的至少一个间隔中以第一温度加热所述抗蚀剂膜。

7. 发明授权

US08088550B2 Positive resist composition and pattern forming method 失效
标题翻译：正抗蚀剂组成和图案形成方法
公开(公告)号：US08088550B2
公开(公告)日：2012-01-03
申请号：US12181757
申请日：2008-07-29
申请人： Shinji Tarutani , Hideaki Tsubaki , Kenji Wada
发明人： Shinji Tarutani , Hideaki Tsubaki , Kenji Wada
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0392 , G03F7/2022 , G03F7/2041 , Y10S430/111
摘要： A positive resist composition, includes: (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (B) a resin of which solubility in an alkali developer increases under an action of an acid; (C) a compound capable of decomposing under an action of an acid to generate an acid; and (D) a compound which itself acts as a base for the acids generated from the component (A) and the component (C) but decomposes upon irradiation with actinic rays or radiation to lose a basicity for the acids generated from the component (A) and the component (C).
摘要翻译：正型抗蚀剂组合物包括：（A）在用光化射线或辐射照射时能够产生酸的化合物; （B）在碱性显影剂中的溶解度在酸的作用下增加的树脂; （C）能够在酸的作用下分解以产生酸的化合物; 和（D）本身作为由组分（A）和组分（C）产生的酸的碱的化合物，但是在用光化射线或辐射照射时分解，以失去由组分（A）产生的酸的碱度）和组分（C）。

8. 发明申请

US20060194148A1 Positive resist composition and pattern forming method using the same 失效
标题翻译：正型抗蚀剂组合物和使用其的图案形成方法
公开(公告)号：US20060194148A1
公开(公告)日：2006-08-31
申请号：US11356051
申请日：2006-02-17
申请人： Hideaki Tsubaki , Shinji Tarutani
发明人： Hideaki Tsubaki , Shinji Tarutani
IPC分类号： G03C1/76
CPC分类号： G03F7/0046 , G03F7/0045 , G03F7/039 , G03F7/0395 , G03F7/0397
摘要： The invention provides a positive resist composition suitably usable at the time of using an ArF excimer laser light as the exposure light, source, assured of excellent performance in view of resist profile, sensitivity, resolution and line edge roughness, and free from occurrence of pattern falling and development defect, and a pattern forming method using the composition, which are a positive resist composition comprising (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, (B) a resin having an alicyclic hydrocarbon structure, which decomposes under the action of an acid to increase the solubility in an alkali, and (C) a chain compound having one or two group(s) selected from a hydroxyl group and a group where the hydrogen atom of a hydroxyl group is substituted with an organic group, in which the chain compound is a solid at ordinary temperature under atmospheric pressure, and a pattern forming method using the composition.
摘要翻译：本发明提供了在使用ArF准分子激光作为曝光光源时适当使用的正性抗蚀剂组合物，鉴于抗蚀剂轮廓，灵敏度，分辨率和线边缘粗糙度，并且不发生图案，确保了优异的性能以及使用该组合物的图案形成方法，其为正型抗蚀剂组合物，其包含（A）在通过光化射线或辐射照射时能够产生酸的化合物，（B）具有脂环族烃结构的树脂，其在酸的作用下分解以增加在碱中的溶解度，和（C）具有一个或两个选自羟基和羟基的氢原子被取代基的基团的链化合物链状化合物在常压下为固体的有机基团和使用该组合物的图案形成方法。

9. 发明申请

US20090280440A1 SURFACE TREATING AGENT FOR RESIST-PATTERN, AND PATTERN-FORMING METHOD USING SAME 审中-公开
标题翻译：用于电阻图案的表面处理剂和使用其的形成图案的方法
公开(公告)号：US20090280440A1
公开(公告)日：2009-11-12
申请号：US12433384
申请日：2009-04-30
申请人： Shinji Tarutani , Hideaki Tsubaki , Naoya Sugimoto
发明人： Shinji Tarutani , Hideaki Tsubaki , Naoya Sugimoto
IPC分类号： G03F7/20 , G03F7/00
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/0045 , G03F7/0392 , G03F7/0397 , G03F7/2041
摘要： A surface treating agent for resist pattern, characterized by containing not only a chemical species having a functional group capable of chemical adsorption to resist pattern and a polymerizable group but also a solvent.
摘要翻译：一种抗蚀剂图案的表面处理剂，其特征在于，不仅含有具有能够进行化学吸附的官能团的化学物质以抵抗图案和可聚合基团，而且含有溶剂。

10. 发明授权

US07338744B2 Positive resist composition and pattern forming method using the same 失效
标题翻译：正型抗蚀剂组合物和使用其的图案形成方法
公开(公告)号：US07338744B2
公开(公告)日：2008-03-04
申请号：US11356051
申请日：2006-02-17
申请人： Hideaki Tsubaki , Shinji Tarutani
发明人： Hideaki Tsubaki , Shinji Tarutani
IPC分类号： G03F7/039
CPC分类号： G03F7/0046 , G03F7/0045 , G03F7/039 , G03F7/0395 , G03F7/0397
摘要： The invention provides a positive resist composition suitably usable at the time of using an ArF excimer laser light as the exposure light source, assured of excellent performance in view of resist profile, sensitivity, resolution and line edge roughness, and free from occurrence of pattern falling and development defect, and a pattern forming method using the composition, which are a positive resist composition comprising (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, (B) a resin having an alicyclic hydrocarbon structure, which decomposes under the action of an acid to increase the solubility in an alkali, and (C) a chain compound having one or two group(s) selected from a hydroxyl group and a group where the hydrogen atom of a hydroxyl group is substituted with an organic group, in which the chain compound is a solid at ordinary temperature under atmospheric pressure, and a pattern forming method using the composition.
摘要翻译：本发明提供了在使用ArF准分子激光作为曝光光源时适当使用的正光刻胶组合物，鉴于抗蚀剂轮廓，灵敏度，分辨率和线边缘粗糙度，确保了优异的性能，并且不发生图案下落和显影缺陷，以及使用该组合物的图案形成方法，其为正型抗蚀剂组合物，其包含（A）在通过光化射线或辐射照射时能够产生酸的化合物，（B）具有脂环族烃结构的树脂，在酸的作用下分解以增加在碱中的溶解度，和（C）具有一个或两个选自羟基和羟基的氢原子被取代基的基团的链化合物有机基团，其中链状化合物在常温常压下为固体，以及使用该组合物的图案形成方法。

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