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1. 发明授权

US5412224A Field effect transistor with non-linear transfer characteristic 失效
标题翻译：具有非线性传输特性的场效应晶体管
公开(公告)号：US5412224A
公开(公告)日：1995-05-02
申请号：US894989
申请日：1992-06-08
申请人： Herbert Goronkin , Jun Shen , Saied Tehrani
发明人： Herbert Goronkin , Jun Shen , Saied Tehrani
IPC分类号： H01L29/80 , H01L29/10 , H01L29/778 , H01L29/161 , H01L29/205 , H01L29/225
CPC分类号： H01L29/1029 , H01L29/1054 , H01L29/778
摘要： A field effect semiconductor device having multiple vertically stacked channels (12, 14, 16) separated by barrier layers comprising wide bandgap material (18) is provided. The channels (12, 14, 16) are formed on a wide bandgap buffer layer (11) and each channel is coupled a N-type drain region (22b). Each channel is also coupled to an N-type source region (25b). With appropriate gate bias on a gate electrode (17), quantized energy levels in the channels (12, 14, 16) are aligned to provide self-doping by electrons in the valence band of the P-channel (14) moving to the conduction band of the N-channels (12, 16) providing peak channel conductivity. At higher gate bias, one of the N-channels (12) becomes non-conductive creating a negative resistance region.
摘要翻译：提供了具有由包括宽带隙材料（18）的阻挡层隔开的多个垂直堆叠通道（12,14,16）的场效应半导体器件。通道（12,14,16）形成在宽带隙缓冲层（11）上，每个通道耦合有N型漏区（22b）。每个通道也耦合到N型源极区域（25b）。在栅电极（17）上具有合适的栅极偏置，通道（12,14,16）中的量化能级被对准以提供通过移动到导通的P沟道（14）的价带中的电子的自掺杂带宽的N沟道（12,16）提供峰值沟道导电性。在较高的栅极偏压下，N沟道（12）中的一个变为不导通，产生负电阻区域。

2. 发明授权

US5289014A Semiconductor device having a vertical quantum well via and method for making 失效
标题翻译：具有垂直量子阱的半导体器件及其制造方法
公开(公告)号：US5289014A
公开(公告)日：1994-02-22
申请号：US930958
申请日：1992-08-17
申请人： Herbert Goronkin , Jun Shen , Saied Tehrani , X. Theodore Zhu
发明人： Herbert Goronkin , Jun Shen , Saied Tehrani , X. Theodore Zhu
IPC分类号： H01L21/20 , H01L29/06 , H01L29/76 , H01L29/80 , H01L29/161 , H01L29/205
CPC分类号： B82Y10/00 , H01L29/7613
摘要： A semiconductor device having a vertical interconnect or via stacked formed by quantum well comprising a semiconductor material is provided. A first semiconductor device (11) having a current carrying region (19) is formed in a first horizontal plane. A second semiconductor device (12) having a current carrying region (29) is formed in a second horizontal plane. Each of the current carrying regions have a first quantized energy level that is substantially equal. A semiconductor via (31) couples the current carrying region (19) of the first semiconductor device (11) to the current carrying region (29) of the second device (12), wherein the semiconductor via (31) has a first quantized energy level capable of alignment with the quantized energy levels of the current carrying regions (19, 29) of the first and second semiconductor devices (11,12).
摘要翻译：提供了具有由包括半导体材料的量子阱形成的垂直互连或通过层叠形成的半导体器件。具有载流区域（19）的第一半导体器件（11）形成在第一水平面中。具有载流区域（29）的第二半导体器件（12）形成在第二水平面中。每个电流承载区域具有基本相等的第一量化能级。半导体通孔（31）将第一半导体器件（11）的载流区域（19）耦合到第二器件（12）的载流区域（29），其中半导体通孔（31）具有第一量子化能能够与第一和第二半导体器件（11,12）的载流区域（19,29）的量化能级对准。

3. 发明授权

US5221849A Semiconductor device with active quantum well gate 失效
标题翻译：具有有源量子阱栅的半导体器件
公开(公告)号：US5221849A
公开(公告)日：1993-06-22
申请号：US899439
申请日：1992-06-16
申请人： Herbert Goronkin , Jun Shen , Saied Tehrani , X. Theodore Zhu
发明人： Herbert Goronkin , Jun Shen , Saied Tehrani , X. Theodore Zhu
IPC分类号： H01L29/80 , H01L27/06 , H01L29/10 , H01L29/772
CPC分类号： H01L27/0605 , H01L29/1029 , H01L29/772
摘要： A field effect semiconductor device having multiple vertically stacked channels (12, 14, 16) separated by independent gate electrodes (13, 15) is provided. The channels (12, 14, 16) are formed on a wide bandgap buffer layer (11) and each channel is coupled a drain electrode (21). Each channel is also coupled to a source electrode (25-26). The quantum well channels (12, 14, 16) and quantum well gates (13, 15) are separated from each other by barrier layers (18) of a wide bandgap semiconductor material.
摘要翻译：提供具有由独立的栅电极（13,15）分离的多个垂直堆叠的通道（12,14,16）的场效半导体器件。通道（12,14,16）形成在宽带隙缓冲层（11）上，每个通道与漏电极（21）相连。每个通道也耦合到源电极（25-26）。量子阱通道（12,14,16）和量子阱栅极（13,15）通过宽带隙半导体材料的阻挡层（18）彼此分离。

4. 发明授权

US5355005A Self-doped complementary field effect transistor 失效
标题翻译：自掺杂互补场效应晶体管
公开(公告)号：US5355005A
公开(公告)日：1994-10-11
申请号：US971118
申请日：1992-11-04
申请人： Saied Tehrani , Jun Shen , Herbert Goronkin , Robert Smith
发明人： Saied Tehrani , Jun Shen , Herbert Goronkin , Robert Smith
IPC分类号： H01L27/092 , H01L21/338 , H01L21/8238 , H01L27/06 , H01L27/095 , H01L29/778 , H01L29/812 , H01L31/072 , H01L29/06 , H01L29/80 , H01L31/109
CPC分类号： H01L27/0605 , H01L27/095 , H01L29/7783
摘要： A complementary field effect structure having a first field effect device (26) including a quantum well having a first channel (12). A first doping region (14) is positioned adjacent to a first quantum well and a first gate electrode (29) is positioned so that the first doping region (14) is between the first gate electrode (29) and the first channel (12) . A second field effect device (37) includes a second channel (22) and a second doping region (19) positioned adjacent to the second channel. A second gate electrode (31) is positioned over the second channel (22) so that the second channel (22) is between the second gate electrode (31) and the second doping region (19). An interconnect electrically couples the first gate electrode (29) to the second gate electrode (31).
摘要翻译：具有包括具有第一通道（12）的量子阱的第一场效应器件（26）的互补场效应结构。第一掺杂区域（14）定位成与第一量子阱相邻，并且第一栅电极（29）被定位成使得第一掺杂区域（14）在第一栅电极（29）和第一沟道（12）之间，。第二场效应装置（37）包括邻近第二通道定位的第二通道（22）和第二掺杂区域（19）。第二栅电极（31）位于第二通道（22）上方，使得第二通道（22）位于第二栅极电极（31）和第二掺杂区域（19）之间。互连将第一栅电极（29）电耦合到第二栅电极（31）。

5. 发明授权

US5298763A Intrinsically doped semiconductor structure and method for making 失效
标题翻译：本征掺杂半导体结构及其制造方法
公开(公告)号：US5298763A
公开(公告)日：1994-03-29
申请号：US970456
申请日：1992-11-02
申请人： Jun Shen , Saied Tehrani , Herbert Goronkin
发明人： Jun Shen , Saied Tehrani , Herbert Goronkin
IPC分类号： H01L29/32 , H01L29/161 , H01L29/205
CPC分类号： H01L29/32
摘要： A semiconductor structure that provides intrinsic doping from native defects is provided. A quantum well including a narrow bandgap material (11, 14) having a low concentration of native defects is sandwiched between two wide bandgap spacer layers (12, 20, 17, 15). The spacer layers (12, 20, 17, 15) have a low concentration of native defects. At least one doping region (13, 16) having a high concentration of native defects positioned adjacent to one of the undoped spacer layers (12, 17).
摘要翻译：提供了一种从天然缺陷提供内在掺杂的半导体结构。包括具有低浓度天然缺陷的窄带隙材料（11,14）的量子阱夹在两个宽带隙间隔层（12,20,17,15）之间。间隔层（12,20,17,15）具有低浓度的天然缺陷。至少一个掺杂区域（13,16）具有与未掺杂的间隔层（12,17）中的一个相邻定位的高浓度的天然缺陷。

6. 发明授权

US5280180A Interconnect structure for coupling semiconductor regions and method for making 失效
标题翻译：用于耦合半导体区域的互连结构和制造方法
公开(公告)号：US5280180A
公开(公告)日：1994-01-18
申请号：US932116
申请日：1992-08-19
申请人： Herbert Goronkin , Jun Shen , Saied Tehrani , Raymond K. Tsui , X. Theodore Zhu
发明人： Herbert Goronkin , Jun Shen , Saied Tehrani , Raymond K. Tsui , X. Theodore Zhu
IPC分类号： H01L21/20 , H01L23/535 , H01L29/06 , H01L29/80 , H01L29/161 , H01L29/205
CPC分类号： H01L23/535 , H01L2924/0002
摘要： A semiconductor device having a lateral interconnect or via formed by quantum well comprising a semiconductor material is provided. The lateral interconnect (17, 18, 19) formed by a quantum well comprising a first semiconductor material composition. A first semiconductor region (11, 12, 13) comprising a second material type is formed adjacent to the lateral interconnect (17, 18, 19). A second semiconductor region (23, 24, 26) comprising the second material type is adjacent to the lateral interconnect (17, 18, 19) so that the lateral interconnect (17, 18, 19) separates the first (11, 12, 13) and second (23, 24, 26) semiconductor regions. The first (17, 18, 19) and second (23, 24, 26) semiconductor regions have a first quantized energy level that is substantially equal. The lateral interconnect (17, 18, 19) has a first quantized energy level capable of alignment with the quantized energy levels of the first (11, 12, 13) and second (23, 24, 26) semiconductor regions.
摘要翻译：提供了具有由包括半导体材料的量子阱形成的横向互连或通孔的半导体器件。由包括第一半导体材料组合物的量子阱形成的横向互连（17,18,19）。包括第二材料类型的第一半导体区域（11,12,13）形成为与横向互连（17,18,19）相邻。包括第二材料类型的第二半导体区域（23,24,26）与横向互连（17,18,19）相邻，使得横向互连（17,18,19）将第一（11,12,13））和第二（23,24,26）个半导体区域。第一（17,18,19）和第二（23,24,26）半导体区域具有基本相等的第一量化能级。横向互连（17,18,19）具有能够与第一（11,12,13）和第二（23,24,26）半导体区域的量化能级对准的第一量化能级。

7. 发明授权

US5270225A Method of making a resonant tunneling semiconductor device 失效
标题翻译：制造谐振隧穿半导体器件的方法
公开(公告)号：US5270225A
公开(公告)日：1993-12-14
申请号：US838955
申请日：1992-02-21
申请人： Herbert Goronkin , Jun Shen , Saied Tehrani
发明人： Herbert Goronkin , Jun Shen , Saied Tehrani
IPC分类号： H01L29/06 , H01L21/331 , H01L29/68 , H01L29/737 , H01L21/265
CPC分类号： B82Y30/00 , B82Y10/00 , H01L29/66318 , H01L29/7376
摘要： A resonant tunneling semiconductor device having two large bandgap barrier layers (12, 14) separated by a quantum well (13) is provided. The two barriers (12,14) and the quantum well (13) are formed between first and second semiconductor layers (11, 16) of a first conductivity type. A monolayer (17) of material having a different bandgap than the quantum well material is provided in the quantum well thereby lowering the ground state energy level of the quantum well. Alternatively, monolayers (18, 19) having a different bandgap than that of the first and second semiconductor layers (11, 16) are formed in the first and second semiconductor layers, respectively, outside of the quantum well (13).
摘要翻译：提供了具有由量子阱（13）分离的两个大的带隙势垒层（12,14）的共振隧穿半导体器件。在第一导电类型的第一和第二半导体层（11,16）之间形成两个势垒（12,14）和量子阱（13）。在量子阱中提供具有与量子阱材料不同的带隙的材料的单层（17），从而降低量子阱的基态能级。或者，在第一和第二半导体层中分别在量子阱（13）的外部形成具有与第一和第二半导体层（11,16）不同的带隙的单层（18,19）。

8. 发明授权

US5326985A Bipolar doped semiconductor structure and method for making 失效
标题翻译：双极掺杂半导体结构及其制造方法
公开(公告)号：US5326985A
公开(公告)日：1994-07-05
申请号：US951994
申请日：1992-09-28
申请人： Herbert Goronkin , Jun Shen , Saied N. Tehrani
发明人： Herbert Goronkin , Jun Shen , Saied N. Tehrani
IPC分类号： H01L29/778 , H01L29/161 , H01L29/205
CPC分类号： H01L29/7783
摘要： A semiconductor structure that provides both N-type and P-type doping from a single dopant source is provided. A first doping region (13) comprising a first material composition includes holes and electrons in a doping energy level (E.sub.D)- A first undoped spacer region (12) comprising the first material composition covers the doping region (13). An undoped channel (11,14) comprising a second material composition covers the first spacer region (12) and a second undoped spacer region (12) comprising the first material composition covers the undoped channel (11,14). The first material composition has a wider bandgap than the second material composition and the doping energy level (E.sub.D) is selected to provide electrons to the undoped channel (11,14) when the second material composition has a conduction band minimum less than the doping energy level (E.sub.D) and to provide holes to the first undoped channel (11,14) when the second material composition has a valence band maximum greater than the doping energy level (E.sub.D).
摘要翻译：提供了从单个掺杂剂源提供N型和P型掺杂的半导体结构。包括第一材料组合物的第一掺杂区域（13）包括掺杂能级（ED）的空穴和电子 - 包含第一材料组合物的第一未掺杂间隔区域（12）覆盖掺杂区域（13）。包括第二材料组合物的未掺杂通道（11,14）覆盖第一间隔区域（12），并且包括第一材料组合物的第二未掺杂间隔区域（12）覆盖未掺杂沟道（11,14）。第一材料组合物具有比第二材料组成更宽的带隙，并且当第二材料组合物具有小于掺杂能量的导带最小值时，选择掺杂能级（ED）以向未掺杂沟道（11,14）提供电子（ED），并且当第二材料组合物具有大于掺杂能级（ED）的价带最大值时，向第一未掺杂通道（11,14）提供孔。

9. 发明授权

US5477169A Logic circuit with negative differential resistance device 失效
标题翻译：具有负差分电阻器件的逻辑电路
公开(公告)号：US5477169A
公开(公告)日：1995-12-19
申请号：US261799
申请日：1994-06-20
申请人： Jun Shen , Herbert Goronkin , Saied N. Tehrani
发明人： Jun Shen , Herbert Goronkin , Saied N. Tehrani
IPC分类号： H01L21/822 , G11C5/14 , H01L27/04 , H01L29/06 , H01L29/66 , H01L29/86 , H01L29/88 , H03K19/094 , H03K19/0944 , H03K19/10 , H03K19/21 , G06F7/50
CPC分类号： G11C5/142 , H03K19/094 , H03K19/10 , H03K19/215
摘要： A logic circuit including a pair of FETs connected in parallel and including first and second common current terminals, each of the FETs further having a control terminal connected to receive a logic signal thereon. A negative differential resistance device affixed to one of the first and second common current terminals and having a conductance characteristic such that the device operates at a peak current when one of the FETs is turned ON and at a valley current when both of the FETs are simultaneously turned ON. A load resistance coupled to the other of the first and second common current terminals and providing an output for the logic circuit.
摘要翻译：一种逻辑电路，包括并联连接并包括第一和第二公共电流端子的一对FET，每个FET还具有连接以在其上接收逻辑信号的控制端子。固定在第一和第二公共电流端子中的一个并具有电导特性的负差分电阻器件，使得器件在FET中的一个导通时以峰值电流工作，并且当两个FET同时处于谷值电流时工作打开。负载电阻耦合到第一和第二公共电流端子中的另一个，并提供逻辑电路的输出。

10. 发明授权

US5883404A Complementary heterojunction semiconductor device 失效
标题翻译：互补异质结半导体器件
公开(公告)号：US5883404A
公开(公告)日：1999-03-16
申请号：US297279
申请日：1994-08-29
申请人： Herbert Goronkin , Saied Nikoo Tehrani , Jun Shen
发明人： Herbert Goronkin , Saied Nikoo Tehrani , Jun Shen
IPC分类号： H01L29/06 , H01L27/06 , H01L27/092 , H01L27/095 , H01L29/66 , H01L29/80 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： B82Y10/00 , H01L27/0605 , H01L27/092
摘要： A complementary heterojunction semiconductor device (10) has a first resonant interband tunneling transistor (12) coupled to a second resonant interband tunneling transistor (14) through a common output (16). The first transistor (12) has a first gate (18) of a first semiconductor type and a drain (28) coupled to the first gate (18). The first gate (18) is also coupled to the common output (16). The second transistor (14) has a second gate (32) of a second semiconductor type and a source (42) coupled to the second gate (32). The second gate (32) is also coupled to the common output (16). The valence band (60,80,82) of the first semiconductor type has an energy level greater than the conduction band (62,64,84) of the second semiconductor type.
摘要翻译：互补异质结半导体器件（10）具有通过公共输出（16）耦合到第二谐振频带隧穿晶体管（14）的第一谐振频带隧穿晶体管（12）。第一晶体管（12）具有第一半导体类型的第一栅极（18）和耦合到第一栅极（18）的漏极（28）。第一门（18）也耦合到公共输出端（16）。第二晶体管（14）具有第二半导体类型的第二栅极（32）和耦合到第二栅极（32）的源极（42）。第二栅极（32）也耦合到公共输出端（16）。第一半导体类型的价带（60,80,82）具有大于第二半导体类型的导带（62,64,84）的能级。

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