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1. 发明授权

US5110428A Process and apparatus for double-sided chemomechanical polishing of semiconductor wafers and semiconductor wafers obtainable thereby 失效
标题翻译：用于半导体波形和半导体波形的双面化学抛光的工艺和装置可获得
公开(公告)号：US5110428A
公开(公告)日：1992-05-05
申请号：US577678
申请日：1990-09-04
申请人： Helene Prigge , Josef Lang
发明人： Helene Prigge , Josef Lang
IPC分类号： B24B37/08 , H01L21/304 , H01L21/306
CPC分类号： H01L21/02024 , B24B37/08 , Y10T428/21
摘要： Semiconductor wafers, in particular, silicon wafers, with differently poled front and rear sides and high geometrical quality can be fabricated by double-sided polishing if the wafer surfaces are differently polarized during the polishing process. This can be achieved in a simple fashion, in that during polishing, an electric field is set up between the upper and lower polishing plates. This can be accomplished by providing the upper polishing plate between the plate surface and the polishing cloth with a thin conductive layer insulated with respect thereto, on which a voltage can be impressed, while both polishing plates are grounded to the frame.
摘要翻译：如果在抛光过程中晶片表面有不同的极化，则可以通过双面抛光来制造具有不同抛光的前侧和后侧以及高几何质量的半导体晶片，特别是硅晶片。这可以以简单的方式实现，因为在抛光期间，在上和下抛光板之间建立电场。这可以通过在板表面和抛光布之间设置相对于其间绝缘的薄导电层，同时在其上施加电压的同时将两个抛光板接地到框架来实现。

2. 发明授权

US5167667A Process for treating polishing cloths used for semiconductor wafers 失效
标题翻译：用于半导体波导处理抛光布的工艺
公开(公告)号：US5167667A
公开(公告)日：1992-12-01
申请号：US533479
申请日：1990-06-05
申请人： Helene Prigge , Josef Lang
发明人： Helene Prigge , Josef Lang
IPC分类号： B24B53/10 , B24B53/00 , B24B53/007 , B24B53/017
CPC分类号： B24B53/017
摘要： In the chemo-mechanical polishing, in particular, of semiconductor wafers,he abrasion and the geometrical quality of the wafers decreases with increasing service life of the polishing cloth. This can be prevented by treating the polishing cloth in each case after the polishing operation in a manner such that a pressure field is impressed, essentially without mechanical stress, on the polishing cloth, which pressure field causes a treatment liquid to flow through the interior of the polishing cloth and in this process the residues produced during polishing are rendered mobile and removed. A baseplate placed transversely across the polishing cloth and having a flat working surface provided with exit openings for the treatment liquid is suitable for carrying out the process. In the treatment, the treatment liquid is forced beneath the baseplate into the moving polishing cloth so that the latter is gradually traversed by the zone through which flow takes place.
摘要翻译：在化学机械抛光中，特别是半导体晶片的研磨，晶片的磨损和几何质量随着抛光布的使用寿命的增加而减小。这可以通过在抛光操作之后的每种情况下处理抛光布以这样的方式来防止，即在抛光布上施加压力场（基本上没有机械应力），该压力场使得处理液体流过内部抛光布，并且在该过程中，在抛光期间产生的残余物被移动并移除。横置于抛光布上的基板具有设置有用于处理液体的出口的平坦工作表面，适用于进行该过程。在处理中，将处理液体强制在基板下方进入移动的抛光布中，使得后者逐渐穿过流过的区域。

3. 发明授权

US5164323A Process for the surface treatment of semiconductor slices 失效
标题翻译：半导体晶片表面处理工艺
公开(公告)号：US5164323A
公开(公告)日：1992-11-17
申请号：US581274
申请日：1990-09-12
申请人： Gerhard Brehm , Helene Prigge , Reinhold Wahlich
发明人： Gerhard Brehm , Helene Prigge , Reinhold Wahlich
IPC分类号： H01L21/322
CPC分类号： H01L21/3221
摘要： Semiconductor slices, in particular having the surface polished on both ss, can be provided with a surface which effects the formation of gettering centers. These centers include stacking faults and/or dislocation networks in subsequent thermal treatment steps by a pressure loading being exerted on them with the aid of an elastic pressure transmission medium which causes local pressure inhomogeneities. A material erosion, for example in the form of scratches, is not necessary in this process. Advantageously, the treatment is carried out during a template polishing step in which a suitable pressure transmission medium is in contact with the rear side of the slice. The process makes available semiconductor slices with gettering action on one side which have a high surface quality on both sides.
摘要翻译：特别是在两侧具有抛光表面的半导体切片可以具有形成吸气中心的表面。这些中心在随后的热处理步骤中包括堆垛层错和/或位错网络，其中借助于导致局部压力不均匀性的弹性压力传递介质施加在其上的压力负载。在这个过程中不需要材料侵蚀，例如划痕的形式。有利地，在模板研磨步骤期间进行处理，其中合适的压力传递介质与切片的后侧接触。该方法使半导体片具有在两面具有高表面质量的一面具有吸气作用。

4. 发明授权

US5051117A Process for removing gaseous contaminating compounds from carrier gases containing halosilane compounds 失效
标题翻译：从含有卤代硅烷化合物的载气中除去气态污染化合物的方法
公开(公告)号：US5051117A
公开(公告)日：1991-09-24
申请号：US631190
申请日：1990-12-20
申请人： Helene Prigge , Robert Rurlander , Harald Hoffman , Hans-Peter Bortner
发明人： Helene Prigge , Robert Rurlander , Harald Hoffman , Hans-Peter Bortner
IPC分类号： C01B3/56 , B01D53/02 , B01J20/18 , C01B33/03 , C01B33/035 , C01B33/107 , C30B25/02
CPC分类号： C30B29/06 , B01D53/02 , C01B33/03 , C01B33/035 , C01B33/1071 , C30B25/02 , Y10S95/902
摘要： A process for removing contaminants, particularly dopant, from halosilane-containing carrier gases, such as those which are produced in the production of high-purity silicon. The process of the invention is perferably carried out with aid of zeolites which has a low proportion of aluminum and are used in the anhydrous state by bringing the zeolites into contact with the carrier gases. Zeolites, after use, can be regenerated and re-used by increasing the temperature and/or decreasing the pressure of the procedure.
摘要翻译：用于从含卤硅烷的载气中除去污染物，特别是掺杂剂的方法，例如在生产高纯度硅时生产的那些。本发明的方法优选通过使沸石与载气接触而具有低比例铝的沸石并以无水状态使用的方法进行。使用后的沸石可以通过增加温度和/或降低程序的压力来再生和重新使用。

5. 发明授权

US4971654A Process and apparatus for etching semiconductor surfaces 失效
标题翻译：用于蚀刻半导体表面的工艺和设备
公开(公告)号：US4971654A
公开(公告)日：1990-11-20
申请号：US229262
申请日：1988-08-08
申请人： Anton Schnegg , Gerhard Brehm , Helene Prigge , Robert Rurlander , Fritz Ketterl
发明人： Anton Schnegg , Gerhard Brehm , Helene Prigge , Robert Rurlander , Fritz Ketterl
IPC分类号： H01L21/308 , H01L21/306
CPC分类号： H01L21/02019 , H01L21/30604
摘要： A process and apparatus for etching semiconductor surfaces, in particular,ilicon, with a mixture containing nitrogen-oxygen based compounds as oxidizing compounds, hydrofluoric acid as the component which dissolves the oxidation product, and sulfuric acid, optionally with phosphoric acid added, as a carrier medium. This mixture makes it possible to design the process as a cyclic process in which oxygen supplied to the system ultimately effects an oxidation of the material to be etched, and the product of its oxidation is removed from the circuit. The process is noteworthy for its low usage of reagents and because it is not harmful to the environment.
摘要翻译：一种用半导体表面，特别是硅，含有氮氧基化合物作为氧化化合物的混合物，作为溶解氧化产物的组分的氢氟酸和任选地加入磷酸的硫酸蚀刻半导体表面的方法和装置，作为载体介质。该混合物使得可以将该方法设计为循环过程，其中供应到系统的氧最终导致被蚀刻材料的氧化，并且其氧化产物从电路中去除。这个过程值得注意的是它的试剂使用量低，并且对环境无害。

6. 发明授权

US4973563A Process for preserving the surface of silicon wafers 失效
标题翻译：保存硅晶片表面的工艺
公开(公告)号：US4973563A
公开(公告)日：1990-11-27
申请号：US368579
申请日：1989-06-20
申请人： Helene Prigge , Anton Schnegg , Gerhard Brehm
发明人： Helene Prigge , Anton Schnegg , Gerhard Brehm
IPC分类号： B05D3/10 , B05D7/00 , H01L21/306 , H01L23/29
CPC分类号： H01L21/02046 , H01L21/02052 , H01L23/293 , H01L2924/0002
摘要： A process for preserving the surface of silicon wafers after the wafers are polished in a conventional polishing operation by converting the wafer surface to the hydrophobic state, in particular, by polishing, or with hydrofluoric acid and treating immediately afterwards with a reagent, e.g., alcohols, organosilanes or silanols and preferably in aqueous solution. The wafer becomes coated in this process with a protective layer which inhibits surface deterioration, and also permits long storage times.
摘要翻译：通过将晶片表面转化为疏水状态，特别是通过研磨，或用氢氟酸，然后立即用试剂例如醇进行处理，在传统的抛光操作中抛光晶片之后，保留硅晶片的表面的方法，有机硅烷或硅烷醇，优选在水溶液中。该晶片在该工艺中被涂覆有抑制表面劣化的保护层，并且还允许长的储存时间。

7. 发明授权

US4968381A Method of haze-free polishing for semiconductor wafers 失效
标题翻译：半导体晶片无雾度抛光方法
公开(公告)号：US4968381A
公开(公告)日：1990-11-06
申请号：US250394
申请日：1988-09-28
申请人： Helene Prigge , Anton Schnegg , Gerhard Brehm , Herbert Jacob
发明人： Helene Prigge , Anton Schnegg , Gerhard Brehm , Herbert Jacob
IPC分类号： H01L21/304 , H01L21/306
CPC分类号： H01L21/30625
摘要： A polishing process in which haze-free semiconductor wafers can be obtained in a single-stage process in which an initial phase of the polishing operation is carried out in the usual manner in the alkaline region. This initial stage is followed by a final phase in which polishing is carried out, at a pH of 3 to 7, in the presence of additives in the polishing agent which reduce the amount of material removed by polishing. Consequently, it may be possible to dispense with polishing agent components which act mechanically. Both phases can be carried out on one and the same equipment without interrupting the polishing operation.
摘要翻译：在碱性区域中以通常的方式进行研磨操作的初始阶段的单阶段工艺中可以获得无霾半导体晶片的抛光工艺。在该初始阶段之后，在抛光剂中存在添加剂的情况下，在3至7的pH下进行抛光的最终阶段，其减少通过抛光除去的材料的量。因此，可以省略机械地起作用的抛光剂组分。两相可在同一设备上进行，而不会中断抛光操作。

8. 发明授权

US4892568A Process for removing n-type impurities from liquid or gaseous substances produced in the gas-phase deposition of silicon 失效
标题翻译：在硅气相沉积中产生的液体或气态物质中除去n型杂质的方法
公开(公告)号：US4892568A
公开(公告)日：1990-01-09
申请号：US293750
申请日：1989-01-03
申请人： Helene Prigge , Robert Rurlander , Michael Schwab , Hans P. Bortner , Andreas Englmuller
发明人： Helene Prigge , Robert Rurlander , Michael Schwab , Hans P. Bortner , Andreas Englmuller
IPC分类号： B01D53/46 , B01D53/14 , C01B33/027 , C01B33/03 , C01B33/107 , C30B29/06
CPC分类号： C01B33/027
摘要： The liquid or gaseous substances, such as hydrogen or trichlorosilane, enntered in the gas-phase deposition of silicon may contain n-type doping impurities which can be removed by adduct formation with silicon, titanium or tin halides. The impurities can be liberated from the adducts by thermal treatment and finally removed. The halides left behind are capable of again forming adducts and are again used to remove the impurities. The process can consequently be operated cyclically and is remarkable for the low quantity of chemicals required and for its ecological harmlessness.
摘要翻译：在气相沉积硅中遇到的液体或气态物质，如氢或三氯硅烷可能含有n型掺杂杂质，可以通过与硅，钛或锡卤化物的形成加成物来除去。杂质可以通过热处理从加合物中释放出来并最终去除。留下的卤化物能够再次形成加合物，并再次用于除去杂质。因此，该方法可以周期性地运行，并且对于所需的低量化学品和其生态无害性是显着的。

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