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1. 发明申请

US20130005952A1 RECOVERY OF LIGNIN AND WATER SOLUBLE SUGARS FROM PLANT MATERIALS 有权
标题翻译：从植物材料中恢复木瓜和水溶性糖
公开(公告)号：US20130005952A1
公开(公告)日：2013-01-03
申请号：US13612453
申请日：2012-09-12
申请人： Helene BELANGER , Ross L. PRESTIDGE , Tony James LOUGH , James D. WATSON , Jia-Long YAO , Clare ELTON , Alan MacFARLANE , Mohammed Mehdi FARID , John CHEN
发明人： Helene BELANGER , Ross L. PRESTIDGE , Tony James LOUGH , James D. WATSON , Jia-Long YAO , Clare ELTON , Alan MacFARLANE , Mohammed Mehdi FARID , John CHEN
IPC分类号： C08L97/00 , C12N5/04
CPC分类号： D21C5/00 , D21C3/20 , D21C11/0007 , Y02E50/16 , Y02E50/17
摘要： In one aspect, a process for treating woody plant material is provided, the process involving contacting the plant material with a continuous flow of an aqueous ethanol solution at elevated temperature and pressure under conditions that promote extraction of ethanol-soluble lignin from the plant material and retention of hemicellulose sugars, xylose and cellulose in the treated plant material solids. In another aspect, a process for extracting hemicellulose sugars from lignin-depleted plant material solids is provided, the process involving contacting lignin-depleted plant material with water at elevated temperature and pressure under conditions that promote extraction of hemicellulose sugars from the plant material; and recovering hemicellulose sugars from the liquid mixture.
摘要翻译：在一个方面，提供了一种用于处理木本植物材料的方法，该方法包括在升高的温度和压力下，在促进从植物材料中提取乙醇可溶性木质素的条件下使植物材料与连续流动的乙醇水溶液接触，在处理的植物材料固体中保留半纤维素糖，木糖和纤维素。在另一方面，提供了从木质素贫乏的植物材料固体中提取半纤维素糖的方法，该方法涉及在促进从植物材料中提取半纤维素糖的条件下，在高温和高压下使木质素贫化的植物材料与水接触; 并从液体混合物中回收半纤维素糖。

2. 发明申请

US20100136642A1 RECOVERY OF LIGNIN AND WATER SOLUBLE SUGARS FROM PLANT MATERIALS 失效
标题翻译：从植物材料中恢复木瓜和水溶性糖
公开(公告)号：US20100136642A1
公开(公告)日：2010-06-03
申请号：US12638862
申请日：2009-12-15
申请人： Helene BELANGER , Ross L. PRESTIDGE , Tony James LOUGH , James D. WATSON , Clare ELTON , Alan McFARLANE , Mohammed Mehdi FARID , John CHEN
发明人： Helene BELANGER , Ross L. PRESTIDGE , Tony James LOUGH , James D. WATSON , Clare ELTON , Alan McFARLANE , Mohammed Mehdi FARID , John CHEN
IPC分类号： C12P7/06 , C07G1/00 , C07H1/08
CPC分类号： D21C5/00 , D21C3/20 , D21C11/0007 , Y02E50/16 , Y02E50/17
摘要： In one aspect, a process for treating woody plant material is provided, the process involving contacting the plant material with a continuous flow of an aqueous ethanol solution at elevated temperature and pressure under conditions that promote extraction of ethanol-soluble lignin from the plant material and retention of hemicellulose sugars, xylose and cellulose in the treated plant material solids. In another aspect, a process for extracting hemicellulose sugars from lignin-depleted plant material solids is provided, the process involving contacting lignin-depleted plant material with water at elevated temperature and pressure under conditions that promote extraction of hemicellulose sugars from the plant material; and recovering hemicellulose sugars from the liquid mixture.
摘要翻译：在一个方面，提供了一种用于处理木本植物材料的方法，该方法包括在升高的温度和压力下，在促进从植物材料中提取乙醇可溶性木质素的条件下使植物材料与连续的乙醇水溶液流接触，在处理的植物材料固体中保留半纤维素糖，木糖和纤维素。在另一方面，提供了从木质素贫乏的植物材料固体中提取半纤维素糖的方法，该方法涉及在促进从植物材料中提取半纤维素糖的条件下，在高温和高压下使木质素贫化的植物材料与水接触; 并从液体混合物中回收半纤维素糖。

3. 发明申请

US20120292693A1 FABRICATION OF TRENCH DMOS DEVICE HAVING THICK BOTTOM SHIELDING OXIDE 审中-公开
标题翻译：具有厚度底层氧化物的TRENCH DMOS器件的制造
公开(公告)号：US20120292693A1
公开(公告)日：2012-11-22
申请号：US13560247
申请日：2012-07-27
申请人： Yeeheng LEE , Sung-Shan TAI , Hong CHANG , John CHEN
发明人： Yeeheng LEE , Sung-Shan TAI , Hong CHANG , John CHEN
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/513 , H01L29/66719 , H01L29/66734
摘要： Semiconductor device fabrication method and devices are disclosed. A device may be fabricated by forming in a semiconductor layer; filling the trench with an insulating material; removing selected portions of the insulating material leaving a portion of the insulating material in a bottom portion of the trench; forming one or more spacers on one or more sidewalls of a remaining portion of the trench; anisotropically etching the insulating material in the bottom portion of the trench using the spacers as a mask to form a trench in the insulator; removing the spacers; and filling the trench in the insulator with a conductive material. Alternatively, an oxide-nitride-oxide (ONO) structure may be formed on a sidewall and at a bottom of the trench and one or more conductive structures may be formed in a portion of the trench not occupied by the ONO structure.
摘要翻译：公开了半导体器件制造方法和器件。可以通过在半导体层中形成来制造器件; 用绝缘材料填充沟槽; 去除所述绝缘材料的选定部分，使所述绝缘材料的一部分留在所述沟槽的底部; 在所述沟槽的剩余部分的一个或多个侧壁上形成一个或多个间隔物; 使用间隔物作为掩模对沟槽的底部中的绝缘材料进行各向异性蚀刻，以在绝缘体中形成沟槽; 去除垫片; 并用导电材料填充绝缘体中的沟槽。或者，可以在沟槽的侧壁和底部形成氧化物 - 氧化物（ONO）结构，并且可以在未被ONO结构占据的沟槽的一部分中形成一个或多个导电结构。

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