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    • 1. 发明授权
    • Apparatus for plasma etching
    • 等离子体蚀刻装置
    • US5009738A
    • 1991-04-23
    • US444293
    • 1989-12-01
    • Heinrich GruenwaldHans RamischAnton Pawlakowitsch
    • Heinrich GruenwaldHans RamischAnton Pawlakowitsch
    • H01J37/32H01L21/00
    • H01L21/67069H01J37/3244
    • An apparatus for the implementation of plasma etching processes providing a process chamber, an upper electrode, and a lower electrode. The upper electrode comprises an anode member, movable with respect to the process chamber, and provides a gas shower for delivering a highly reactive gas, such as a gas containing fluorine or chlorine, into the process chamber. The lower electrode provides a surface for holding a substrate to be etched, the lower electrode being supplied with a high-frequency negative voltage and cooled by an outside source. The process chamber is shaped to press the substrate to the lower electrode when the process chamber is lowered upon the substrate in preparation for operation. The process chamber presses the substrate around a continuous periphery of the substrate. The process chamber is provided with exhaust gas export holes which can be progressively aligned with matching holes in a perforated disk rotatably mounted to an outside surface of the process chamber. An accordion bellows seals the interface between the first electrode stem and process chamber, to prevent penetration of particles into the process chamber. The above-described apparatus is all preferably situated in a vacuum chamber.
    • 一种用于实现提供处理室,上电极和下电极的等离子体蚀刻工艺的装置。 上电极包括可相对于处理室移动的阳极构件,并且提供用于将高反应性气体(例如含有氟或氯的气体)输送到处理室中的气体淋浴。 下电极提供用于保持要蚀刻的衬底的表面,下电极被提供高频负电压并由外源冷却。 当处理室下降到基板上以准备操作时,处理室被成形为将基板压到下电极。 处理室围绕基板的连续周边挤压基板。 处理室设置有排气出口孔,排气出口孔可以与可旋转地安装到处理室的外表面的多孔盘中的匹配孔逐渐对准。 手风琴波纹管密封第一电极杆和处理室之间的界面,以防止颗粒渗透到处理室中。 上述装置都优选位于真空室中。