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1. 发明授权

US06819969B2 Chemical vapor deposition process and apparatus for performing the same 失效
标题翻译：化学气相沉积工艺及其执行装置
公开(公告)号：US06819969B2
公开(公告)日：2004-11-16
申请号：US09963482
申请日：2001-09-27
申请人： Hee-Tae Lee , Yoon-Sei Park , Kwang-Sig Kim , Jong-Woo Kim
发明人： Hee-Tae Lee , Yoon-Sei Park , Kwang-Sig Kim , Jong-Woo Kim
IPC分类号： G06F1900
CPC分类号： B08B7/00 , B08B7/0035 , C23C16/4401 , C23C16/4405 , Y10T137/7724
摘要： An apparatus and a method for performing a chemical vapor deposition process that reduces particle contamination of a wafer, wherein a cleaning gas including a fluorine radical is introduced into the process chamber to clean the chamber. After loading a wafer in the process chamber, a deposition gas is introduced into the chamber to form a film on the wafer. An inert gas as a back flow-preventing gas is introduced into the process chamber through a cleaning gas supply line to prevent the deposition gas from flowing back toward the cleaning gas supply line. Thus, the cleaning gas supply line is prevented from being contaminated by the deposition gas and particle formation on the wafer during deposition of the film is reduced, so that yield and reliability of the semiconductor device may be improved.
摘要翻译：一种用于执行减少晶片的颗粒污染的化学气相沉积工艺的装置和方法，其中将包含氟自由基的清洁气体引入处理室以清洁室。在处理室中装载晶片之后，将沉积气体引入室中以在晶片上形成膜。作为防回流气体的惰性气体通过清洁气体供给管线被引入处理室，以防止沉积气体向清洁气体供应管线流回。因此，防止清洗气体供给管线被沉积气体污染，并且在沉积膜时晶片上的颗粒形成减少，从而可以提高半导体器件的成品率和可靠性。

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