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1. 发明授权

US07910155B2 Method for manufacturing high temperature superconducting conductor 有权
标题翻译：制造高温超导导体的方法
公开(公告)号：US07910155B2
公开(公告)日：2011-03-22
申请号：US11326895
申请日：2006-01-06
申请人： Hee-Gyoun Lee , Venkat Selvamanickam
发明人： Hee-Gyoun Lee , Venkat Selvamanickam
IPC分类号： B05D5/12 , H01L39/24 , C23C14/00
CPC分类号： C23C16/45572 , C23C16/408 , C23C16/4481 , C23C16/4557 , C23C16/545 , H01L39/2441 , Y10S505/726 , Y10T29/49014
摘要： A method for manufacturing a high-temperature superconducting conductor includes translating an elongated substrate through a reactor. Further, a high temperature superconducting layer is formed on the substrate translating through the reactor by deposition of a reaction product of metalorganic precursor materials onto the substrate. Further, partial pressure of oxygen is monitored to indirectly monitor supply of metalorganic precursors into the reactor.
摘要翻译：一种用于制造高温超导体导体的方法包括使细长的衬底平移通过反应器。此外，通过将金属有机前体材料的反应产物沉积到基底上，在衬底上形成高温超导层，该衬底平移通过反应器。此外，监测氧气的分压以间接监测向反应器中的金属有机前体的供应。

2. 发明申请

US20060073977A1 Critical current testing techniques for superconducting conductors 有权
标题翻译：超导导体的临界电流测试技术
公开(公告)号：US20060073977A1
公开(公告)日：2006-04-06
申请号：US10950189
申请日：2004-09-24
申请人： Yi-Yuan Xie , Hee-Gyoun Lee , Venkat Selvamanickam
发明人： Yi-Yuan Xie , Hee-Gyoun Lee , Venkat Selvamanickam
IPC分类号： H01L39/24
CPC分类号： G01R33/1246
摘要： A method for testing a superconducting coated conductor is disclosed. The method includes providing a superconducting coated conductor having an dimension ratio of not less than about 102; and measuring a voltage over a plurality of segments of the superconducting article while applying a constant current Icc.
摘要翻译：公开了一种用于测试超导涂层导体的方法。该方法包括提供尺寸比不小于约10-2的超导涂层导体; 以及在施加恒定电流I cc时测量超导制品的多个部分上的电压。

3. 发明授权

US07554317B2 Critical current testing techniques for superconducting conductors 有权
标题翻译：超导导体的临界电流测试技术
公开(公告)号：US07554317B2
公开(公告)日：2009-06-30
申请号：US10950189
申请日：2004-09-24
申请人： Yi-Yuan Xie , Hee-Gyoun Lee , Venkat Selvamanickam
发明人： Yi-Yuan Xie , Hee-Gyoun Lee , Venkat Selvamanickam
IPC分类号： G01N27/00 , G01R19/00
CPC分类号： G01R33/1246
摘要： A method for testing a superconducting coated conductor is disclosed. The method includes providing a superconducting coated conductor having an dimension ratio of not less than about 102; and measuring a voltage over a plurality of segments of the superconducting article while applying a constant current Icc.
摘要翻译：公开了一种用于测试超导涂层导体的方法。该方法包括提供尺寸比不小于约102的超导涂层导体; 以及在施加恒定电流Icc的同时测量所述超导制品的多个段上的电压。

4. 发明申请

US20050223983A1 Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors 审中-公开
标题翻译：可用于制造超导导体的化学气相沉积（CVD）装置
公开(公告)号：US20050223983A1
公开(公告)日：2005-10-13
申请号：US10820634
申请日：2004-04-08
申请人： Venkat Selvamanickam , Hee-Gyoun Lee
发明人： Venkat Selvamanickam , Hee-Gyoun Lee
IPC分类号： C23C16/00 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/54 , H01L39/24
CPC分类号： C23C16/45565 , C23C16/408 , C23C16/455 , C23C16/45517 , C23C16/45591 , C23C16/545 , H01L39/2441 , Y10T29/49014
摘要： A chemical vapor deposition (CVD) apparatus usable in the manufacture of a superconducting conductor on an elongate substrate is disclosed. The CVD apparatus includes a reactor, at least one substrate heater, and at least one precursor injector having a longitudinal flow distributor. Optionally, the CVD apparatus may include one of a transverse lateral flow restrictor, a shield for protecting a low-temperature region of the substrate, and both.
摘要翻译：公开了可用于在细长衬底上制造超导导体的化学气相沉积（CVD）装置。 CVD装置包括反应器，至少一个基板加热器和至少一个具有纵向流分配器的前驱物喷射器。可选地，CVD装置可以包括横向横向限流器，用于保护衬底的低温区域的屏蔽件和两者。

5. 发明申请

US20100009064A1 Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors 有权
标题翻译：可用于制造超导导体的化学气相沉积（CVD）装置
公开(公告)号：US20100009064A1
公开(公告)日：2010-01-14
申请号：US11326895
申请日：2006-01-06
申请人： Hee-Gyoun Lee , Venkat Selvamanickam
发明人： Hee-Gyoun Lee , Venkat Selvamanickam
IPC分类号： C23C16/52
CPC分类号： C23C16/45572 , C23C16/408 , C23C16/4481 , C23C16/4557 , C23C16/545 , H01L39/2441 , Y10S505/726 , Y10T29/49014
摘要： A method for manufacturing a high-temperature superconducting conductor includes translating an elongated substrate through a reactor. Further, a high temperature superconducting layer is formed on the substrate translating through the reactor by deposition of a reaction product of metalorganic precursor materials onto the substrate. Further, partial pressure of oxygen is monitored to indirectly monitor supply of metalorganic precursors into the reactor.
摘要翻译：一种用于制造高温超导体导体的方法包括使细长的衬底平移通过反应器。此外，通过将金属有机前体材料的反应产物沉积到基底上，在衬底上形成高温超导层，该衬底平移通过反应器。此外，监测氧气的分压以间接监测向反应器中的金属有机前体的供应。

6. 发明授权

US08512798B2 Plasma assisted metalorganic chemical vapor deposition (MOCVD) system 有权
标题翻译：等离子体辅助金属有机化学气相沉积（MOCVD）系统
公开(公告)号：US08512798B2
公开(公告)日：2013-08-20
申请号：US10456732
申请日：2003-06-05
申请人： Venkat Selvamanickam , Hee-Gyoun Lee
发明人： Venkat Selvamanickam , Hee-Gyoun Lee
IPC分类号： B05D5/12 , C23C16/00 , H05H1/00
CPC分类号： C23C16/511 , C23C16/4481 , C23C16/482 , C23C16/545 , H01L39/2441
摘要： The present invention is a high-throughput, ultraviolet (UV) assisted metalorganic chemical vapor deposition (MOCVD) system for the manufacture of HTS-coated tapes. The UV-assisted MOCVD system of the present invention includes a UV source that irradiates the deposition zone and improves the thin film growth rate. The MOCVD system further enhances the excitation of the precursor vapors and utilizes an atmosphere of monatomic oxygen (O) rather than the more conventional diatomic oxygen (O2) in order to optimize reaction kinetics and thereby increase the thin film growth rate. In an alternate embodiment, a microwave plasma injector is substituted for the UV source.
摘要翻译：本发明是用于制造HTS涂层胶带的高通量紫外线（UV）辅助金属有机化学气相沉积（MOCVD）系统。本发明的UV辅助MOCVD系统包括照射沉积区域并提高薄膜生长速率的UV源。 MOCVD系统进一步增强前体蒸气的激发，并利用单原子氧（O）的气氛而不是更常规的双原子氧（O 2），以优化反应动力学，从而提高薄膜生长速率。在替代实施例中，微波等离子体注入器代替UV源。

7. 发明申请

US20120258863A1 METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) PROCESS AND APPARATUS TO PRODUCE MULTI-LAYER HIGH-TEMPERATURE SUPERCONDUCTING (HTS) COATED TAPE 审中-公开
标题翻译：金属化学气相沉积（MOCVD）工艺和设备生产多层高温超导（HTS）涂层胶带
公开(公告)号：US20120258863A1
公开(公告)日：2012-10-11
申请号：US13442844
申请日：2012-04-09
申请人： Venkat Selvamanickam , Hee-Gyoun Lee
发明人： Venkat Selvamanickam , Hee-Gyoun Lee
IPC分类号： H01L39/24 , H01B12/02 , H01B13/00
CPC分类号： H01L39/2441 , C04B35/4508 , C04B35/6264 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/6584 , C04B2235/79 , C23C16/408 , C23C16/45523 , C23C16/54 , H01L39/128 , Y02T50/67 , Y02T50/6765
摘要： An MOCVD apparatus and process for producing multi-layer HTS-coated tapes with increased current capacity which includes multiple liquid precursor sources, each having an associated pump and vaporizer, the outlets of which feed a multiple compartment showerhead apparatus within an MOCVD reactor. The multiple compartment showerhead apparatus is located in close proximity to an associated substrate heater which together define multiple deposition sectors in a deposition zone.
摘要翻译：一种用于生产具有增加的电流容量的多层HTS涂覆带的MOCVD装置和方法，其包括多个液体前体源，每个液体前体源具有相关联的泵和蒸发器，其出口在MOCVD反应器内供给多室喷淋头装置。多隔室喷头装置位于紧邻相关联的基板加热器，其一起在沉积区域中限定多个沉积扇区。

8. 发明授权

US08268386B2 Method for manufacturing high-temperature superconducting conductors 有权
标题翻译：制造高温超导导体的方法
公开(公告)号：US08268386B2
公开(公告)日：2012-09-18
申请号：US11324511
申请日：2006-01-03
申请人： Venkat Selvamanickam , Hee-Gyoun Lee
发明人： Venkat Selvamanickam , Hee-Gyoun Lee
IPC分类号： B05D5/12 , H01L39/24
CPC分类号： C23C16/45565 , C23C16/408 , C23C16/455 , C23C16/45517 , C23C16/45591 , C23C16/545 , H01L39/2441 , Y10T29/49014
摘要： A method for manufacturing a high-temperature superconducting conductor includes providing an elongate substrate to a reactor, the reactor having a longitudinal flow distributor. The longitudinal flow distributor has an entrance, a plurality of exits, and an interior distribution member provided between the entrance and the plurality of exits. The method further includes heating at least a portion of the substrate to a temperature sufficient to facilitate the formation of one of a superconducting material and a predecessor to a superconducting material. Further, the method includes flowing at least one precursor into the longitudinal flow distributor, through the entrance thereof, past an internal distribution member, and out through a plurality of exits, thereby longitudinally distributing the at least one precursor to form the superconducting material or predecessor thereof on the substrate.
摘要翻译：一种用于制造高温超导体导体的方法包括向反应器提供细长衬底，所述反应器具有纵向流动分配器。纵向流动分配器具有入口，多个出口以及设置在入口和多个出口之间的内部分配构件。该方法还包括将基底的至少一部分加热到足以有助于形成超导材料和超导材料的前身之一的温度。此外，该方法包括将至少一种前体流经纵向流动分配器，通过其入口流过内部分配构件，并通过多个出口流出，从而纵向分配至少一种前体以形成超导材料或前身在基板上。

9. 发明授权

US08153281B2 Metalorganic chemical vapor deposition (MOCVD) process and apparatus to produce multi-layer high-temperature superconducting (HTS) coated tape 有权
标题翻译：金属有机化学气相沉积（MOCVD）工艺和设备，用于生产多层高温超导（HTS）涂层胶带
公开(公告)号：US08153281B2
公开(公告)日：2012-04-10
申请号：US10602468
申请日：2003-06-23
申请人： Venkat Selvamanickam , Hee-Gyoun Lee
发明人： Venkat Selvamanickam , Hee-Gyoun Lee
IPC分类号： H01B12/06 , H01L39/12 , B32B18/00 , C23C14/08
CPC分类号： H01L39/2441 , C04B35/4508 , C04B35/6264 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/6584 , C04B2235/79 , C23C16/408 , C23C16/45523 , C23C16/54 , H01L39/128 , Y02T50/67
摘要： An MOCVD apparatus and process for producing multi-layer HTS-coated tapes with increased current capacity which includes multiple liquid precursor sources, each having an associated pump and vaporizer, the outlets of which feed a multiple compartment showerhead apparatus within an MOCVD reactor. The multiple compartment showerhead apparatus is located in close proximity to an associated substrate heater which together define multiple deposition sectors in a deposition zone.
摘要翻译：一种用于生产具有增加的电流容量的多层HTS涂覆带的MOCVD装置和方法，其包括多个液体前体源，每个液体前体源具有相关联的泵和蒸发器，其出口在MOCVD反应器内供给多室喷淋头装置。多隔室喷头装置位于紧邻相关联的基板加热器，其一起在沉积区域中限定多个沉积扇区。

10. 发明授权

US07286032B2 Rare-earth-Ba-Cu-O superconductors and methods of making same 有权
标题翻译：稀土 - Ba-Cu-O超导体及其制造方法
公开(公告)号：US07286032B2
公开(公告)日：2007-10-23
申请号：US10616719
申请日：2003-07-10
申请人： Hee-Gyoun Lee , Yijie Li , Venkat Selvamanickam
发明人： Hee-Gyoun Lee , Yijie Li , Venkat Selvamanickam
IPC分类号： H01F6/00
CPC分类号： H01L39/143 , H01L39/2461
摘要： Rare-earth-Ba-Cu-O superconductors having improved critical current density are described, as are methods of making same. These superconductors comprise a drop in Jc of less than a factor of about 7 at a temperature of between about 30K to about 77K, and at a magnetic field of about 1 Tesla, when the magnetic field is applied normal to the surface of the superconductor, as compared to a Jc in the presence of no magnetic field. These superconductors, when a magnetic field is applied perpendicular to the HTS surface have a peak Jc that is about 50-90%, and when a magnetic field is applied in any orientation with respect to the HTS surface have a Jc value that is at least about 50%, of the peak Jc that exists when the magnetic field is applied parallel to the surface of the superconductor.
摘要翻译：描述了具有改善的临界电流密度的稀土-BA-Cu-O超导体，以及制备它们的方法。当施加磁场时，这些超导体在约30K至约77K之间的温度和约1特斯拉的磁场下包含小于约7的系数的小于等于7的下降与没有磁场的场合相比，与超导体的表面垂直。当垂直于HTS表面施加磁场时，这些超导体具有大约50-90％的峰值J，并且当相对于HTS表面以任何取向施加磁场时具有与平行于超导体的表面施加磁场时存在的峰值Jc的至少约50％的J C值。

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