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    • 4. 发明授权
    • Flat lapping machine with sizing mechanism
    • 平面研磨机具有上胶机构
    • US5099614A
    • 1992-03-31
    • US091438
    • 1987-08-31
    • Hatsuyuki AraiMisuo Sugiyama
    • Hatsuyuki AraiMisuo Sugiyama
    • B24B7/04B24B49/02G01B17/02
    • B24B37/013G01B17/02
    • A flat lapping machine with an ultrasonic sizing mechanism for automatically lapping the work, such as a semiconductor wafer and a magnetic disk substrate, to the present desired thickness. The flat lapping machine permits high-precision thickness measurement or sizing and uniform work lapping by assuring stable propagation of ultrasonic waves by eliminating such noise-induced waveform disturbance as might occur when slurried abrasive is used as the propagation medium and such localized dilution of slurried abrasive as might occur when water is used as the propagation medium. The flat lapping machine may have a sizing mechanism for automatically lapping the work to the preset desired thickness based on the difference between the preset and measured thicknesses of the work. The machine comprises top and bottom rotatable lapping surface plates and a transducer attached to the top surface plate in a position opposite to the work to send out ultrasonic waves to the work to determine its thickness. An ultrasonic-wave propagation medium of such solid material as metal, glass or plastic is interposed between the transducer and the work.
    • 具有用于自动研磨工件的超声波定尺寸机构的平面研磨机,例如半导体晶片和磁盘基板,达到目前所需的厚度。 平板研磨机允许通过消除如使用浆料磨料作为传播介质时可能发生的噪声引起的波形干扰,确保超声波的稳定传播,进行高精度的厚度测量或施胶和均匀的工作研磨,并且这种局部稀释的浆状磨料 当水被用作传播介质时可能发生。 平面研磨机可以具有尺寸机构,用于基于工件的预设厚度和测量厚度之间的差自动将工件研磨到预设所需厚度。 该机器包括顶部和底部可旋转研磨表面板和在与工件相对的位置附接到顶部表面板的换能器,以向工件发出超声波以确定其厚度。 这种固体材料如金属,玻璃或塑料的超声波传播介质介于传感器和工件之间。
    • 6. 发明授权
    • Flattening method and flattening apparatus of a semiconductor device
    • 半导体器件的扁平化方法和扁平化装置
    • US5605499A
    • 1997-02-25
    • US421706
    • 1995-04-13
    • Misuo SugiyamaHatsuyuki Arai
    • Misuo SugiyamaHatsuyuki Arai
    • B24B1/00B24B37/20B24B37/22B24B37/24B24B53/007B24B53/017B24D13/14H01L21/304H01L21/3205H01L21/321H01L21/768B24B21/18
    • B24B37/04B24B53/017
    • A method for flattening an inter-layer insulating film of a semiconductor device of a multi-wiring is carried out with a chemical-mechanical polishing process by using an apparatus, which includes two-layer polishing cloth having an unwoven cloth and a hard foamed layer affixed on a support plate. In order to fluff on a surface of the hard foamed layer or recreate on the whole surface thereof, a tool is provided on the polishing cloth. A silicon wafer is held through a backing pad so that an insulating film of a semiconductor device formed on the wafer is polished by the polishing cloth by rotation of the support plate and the wafer, and at the same time the surface layer of the polishing cloth is fluffed by the tool provided with a polishing surface having the curvature as that of the backing pad. Therefore, a polishing rate can be kept stable, and uniformity of polishing quantity is improved.
    • 通过使用包括具有无纺布和硬发泡层的双层抛光布的设备,通过化学机械抛光工艺进行多层布线的半导体器件的层间绝缘膜的平坦化的方法 固定在支撑板上。 为了绒毛在硬质发泡层的表面上或在其整个表面上重新产生,在抛光布上设置工具。 通过背衬保持硅晶片,使得通过支撑板和晶片的旋转,抛光布在晶片上形成的半导体器件的绝缘膜被抛光,同时抛光布的表面层 被提供有具有与衬垫的曲率一样的抛光表面的工具起毛。 因此,抛光速度可以保持稳定,并且提高了抛光量的均匀性。