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    • 7. 发明授权
    • Voltage-dependent resistor and method of manufacturing the same
    • 电压依赖电阻及其制造方法
    • US07015787B2
    • 2006-03-21
    • US10756459
    • 2004-01-14
    • Kazutaka Nakamura
    • Kazutaka Nakamura
    • H01C7/10
    • H01C7/112
    • A voltage-dependent resistor includes a composite of at least one semiconductive ceramic layer mainly containing ZnO and at least one metal oxide layer containing at least one of strontium and barium, at least one of manganese and cobalt, and at least one rare earth element. The material for the at least one metal oxide layer is represented by the general formula M1-xAxBO3 where M indicates the at least one rare earth element; A indicates the at least one of strontium and barium; B indicates the at least one of manganese and cobalt; and x≦0.4. The at least one semiconductive ceramic layer, which is an n-type semiconductor, is doped with a trivalent dopant. The total number of the at least one semiconductive ceramic layer and the at least one metal oxide layer is at least three.
    • 电压依赖电阻器包括至少一个主要含有ZnO的半导体陶瓷层和至少一个含有锶和钡中的至少一种的金属氧化物层,至少一种锰和钴以及至少一种稀土元素的复合材料。 用于至少一个金属氧化物层的材料由通式M 1-x A 3 X 3 BO 3表示,其中M表示在 至少一个稀土元素; A表示锶和钡中的至少一种; B表示锰和钴中的至少一种; x <= 0.4。 作为n型半导体的至少一个半导体陶瓷层掺杂有三价掺杂剂。 至少一个半导体陶瓷层和至少一个金属氧化物层的总数为至少三个。