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1. 发明授权

US08420439B2 Method of producing a radiation-emitting thin film component and radiation-emitting thin film component 有权
标题翻译：制造发射辐射的薄膜组分和发射辐射的薄膜组分的方法
公开(公告)号：US08420439B2
公开(公告)日：2013-04-16
申请号：US13123410
申请日：2009-10-19
申请人： Hans-Jürgen Lugauer , Klaus Streubel , Martin Strassburg , Reiner Windisch , Karl Engl
发明人： Hans-Jürgen Lugauer , Klaus Streubel , Martin Strassburg , Reiner Windisch , Karl Engl
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , B82Y20/00 , H01L33/0079 , H01L33/32 , H01L33/44
摘要： A method of producing a radiation-emitting thin film component includes providing a substrate, growing nanorods on the substrate, growing a semiconductor layer sequence with at least one active layer epitaxially on the nanorods, applying a carrier to the semiconductor layer sequence, and detaching the semiconductor layer sequence and the carrier from the substrate by at least partial destruction of the nanorods.
摘要翻译：一种制造辐射发射薄膜部件的方法包括提供衬底，在衬底上生长纳米棒，在纳米棒上外延生长具有至少一个活性层的半导体层序列，向半导体层序列施加载体，并将半导体层序列和载体通过纳米棒的至少部分破坏从衬底。

2. 发明申请

US20110215295A1 METHOD OF PRODUCING A RADIATION-EMITTING THIN FILM COMPONENT AND RADIATION-EMITTING THIN FILM COMPONENT 有权
标题翻译：生产辐射发射薄膜组件和辐射发射薄膜组件的方法
公开(公告)号：US20110215295A1
公开(公告)日：2011-09-08
申请号：US13123410
申请日：2009-10-19
申请人： Hans-Jurgen Lugauer , Klaus Streubel , Martin Strassburg , Reiner Windisch , Karl Engl
发明人： Hans-Jurgen Lugauer , Klaus Streubel , Martin Strassburg , Reiner Windisch , Karl Engl
IPC分类号： H01L33/06 , H01L33/30
CPC分类号： H01L33/22 , B82Y20/00 , H01L33/0079 , H01L33/32 , H01L33/44
摘要： A method of producing a radiation-emitting thin film component includes providing a substrate, growing nanorods on the substrate, growing a semiconductor layer sequence with at least one active layer epitaxially on the nanorods, applying a carrier to the semiconductor layer sequence, and detaching the semiconductor layer sequence and the carrier from the substrate by at least partial destruction of the nanorods.
摘要翻译：一种制造辐射发射薄膜部件的方法包括提供衬底，在衬底上生长纳米棒，在纳米棒上外延生长具有至少一个活性层的半导体层序列，向半导体层序列施加载体，并将半导体层序列和载体通过纳米棒的至少部分破坏从衬底。

3. 发明授权

US08283684B2 LED semiconductor body and use of an LED semiconductor body 有权
标题翻译： LED半导体体和使用LED半导体体
公开(公告)号：US08283684B2
公开(公告)日：2012-10-09
申请号：US12443155
申请日：2007-09-19
申请人： Reiner Windisch , Ralph Wirth , Stefan Groetsch , Georg Bogner , Guenter Kirchberger , Klaus Streubel
发明人： Reiner Windisch , Ralph Wirth , Stefan Groetsch , Georg Bogner , Guenter Kirchberger , Klaus Streubel
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L24/24 , H01L25/0756 , H01L25/167 , H01L33/08 , H01L2224/32145 , H01L2924/0002 , H01L2924/12036 , H01L2924/12041 , H01L2924/00
摘要： An LED semiconductor body includes a number of at least two radiation-generating active layers. Each active layer has a forward voltage, wherein the number of active layers is adapted to an operating voltage in such a way that the voltage dropped across a series resistor connected in series with the active layers is at most of the same magnitude as a voltage dropped across the LED semiconductor body. The invention furthermore describes various uses of the LED semiconductor body.
摘要翻译： LED半导体体包括多个至少两个辐射生成有源层。每个有源层具有正向电压，其中有源层的数量适应于工作电压，使得跨过与有源层串联连接的串联电阻器上的电压与电压下降最多相同的大小跨越LED半导体体。本发明还描述了LED半导体本体的各种用途。

4. 发明授权

US08203160B2 LED semiconductor body and use of an LED semiconductor body 有权
公开(公告)号：US08203160B2
公开(公告)日：2012-06-19
申请号：US12443155
申请日：2007-09-19
申请人： Reiner Windisch , Ralph Wirth , Stefan Groetsch , Georg Bogner , Guenter Kirchberger , Klaus Streubel
发明人： Reiner Windisch , Ralph Wirth , Stefan Groetsch , Georg Bogner , Guenter Kirchberger , Klaus Streubel
IPC分类号： H01L33/00
摘要： An LED semiconductor body includes a number of at least two radiation-generating active layers. Each active layer has a forward voltage, wherein the number of active layers is adapted to an operating voltage in such a way that the voltage dropped across a series resistor connected in series with the active layers is at most of the same magnitude as a voltage dropped across the LED semiconductor body. The invention furthermore describes various uses of the LED semiconductor body.

5. 发明申请

US20110240955A1 LED Semiconductor Body and Use of an LED Semiconductor Body 有权
标题翻译： LED半导体器件和LED半导体器件的使用
公开(公告)号：US20110240955A1
公开(公告)日：2011-10-06
申请号：US12443155
申请日：2007-09-19
申请人： Reiner Windisch , Ralph Wirth , Stefan Groetsch , Georg Bogner , Guenter Kirchberger , Klaus Streubel
发明人： Reiner Windisch , Ralph Wirth , Stefan Groetsch , Georg Bogner , Guenter Kirchberger , Klaus Streubel
IPC分类号： H01L27/15
CPC分类号： H01L27/15 , H01L24/24 , H01L25/0756 , H01L25/167 , H01L33/08 , H01L2224/32145 , H01L2924/0002 , H01L2924/12036 , H01L2924/12041 , H01L2924/00
摘要： An LED semiconductor body includes a number of at least two radiation-generating active layers. Each active layer has a forward voltage, wherein the number of active layers is adapted to an operating voltage in such a way that the voltage dropped across a series resistor connected in series with the active layers is at most of the same magnitude as a voltage dropped across the LED semiconductor body. The invention furthermore describes various uses of the LED semiconductor body.
摘要翻译： LED半导体体包括多个至少两个辐射生成有源层。每个有源层具有正向电压，其中有源层的数量适应于工作电压，使得跨过与有源层串联连接的串联电阻器上的电压与电压下降最多相同的大小跨越LED半导体体。本发明还描述了LED半导体本体的各种用途。

6. 发明授权

US09341881B2 Device for generating polarized electromagnetic radiation and projector 有权
标题翻译：用于产生极化电磁辐射和投影仪的装置
公开(公告)号：US09341881B2
公开(公告)日：2016-05-17
申请号：US13926600
申请日：2013-06-25
申请人： Christopher Koelper , Reiner Windisch , Christopher Wiesmann , Julius Muschaweck
发明人： Christopher Koelper , Reiner Windisch , Christopher Wiesmann , Julius Muschaweck
IPC分类号： G02F1/1335 , G02B27/28 , G03B21/14 , G03B21/20 , H04N9/31
CPC分类号： G02F1/133528 , G02B27/283 , G02B27/286 , G02F1/13362 , G03B21/14 , G03B21/2073 , H04N9/3167
摘要： Device for generating polarized electromagnetic radiation has a diffuser and a polarizer. The diffuser is arranged in a beam path of the electromagnetic radiation. The polarizer is arranged in the beam path of the electromagnetic radiation, to be precise downstream of the diffuser in the direction of propagation of the electromagnetic radiation. The polarizer has a reflective side facing the diffuser, said reflective side being at least partly reflective to the electromagnetic radiation. The polarizer transmits electromagnetic radiation having a predefined polarization and reflects electromagnetic radiation not having the predefined polarization back to the diffuser. The diffuser scatters, in a non-polarization-maintaining manner, at least one portion of the reflected-back electromagnetic radiation not having the predefined polarization.
摘要翻译：用于产生极化电磁辐射的装置具有扩散器和偏振器。扩散器布置在电磁辐射的光束路径中。偏振器布置在电磁辐射的光束路径中，以在电磁辐射的传播方向上精确地在扩散器的下游。偏振器具有面向扩散器的反射侧，所述反射侧至少部分地反射电磁辐射。偏振器透射具有预定极化的电磁辐射，并将不具有预定极化的电磁辐射反射回扩散器。扩散器以非偏振保持的方式散射不具有预定极化的反射电磁辐射的至少一部分。

7. 发明授权

US08410507B2 Thermal light source having a high color rendering quality 有权
标题翻译：具有高显色质的热光源
公开(公告)号：US08410507B2
公开(公告)日：2013-04-02
申请号：US13122779
申请日：2009-08-11
申请人： Peter Stauss , Reiner Windisch , Frank Baumann , Matthias Peter
发明人： Peter Stauss , Reiner Windisch , Frank Baumann , Matthias Peter
IPC分类号： H01L29/22 , H01L29/227 , H01L33/00
CPC分类号： H01L25/0753 , H01L33/08 , H01L33/50 , H01L2224/32225 , H01L2924/0002 , H01L2924/00
摘要： A luminous means (1) including at least one optoelectronic semiconductor device (2) which emits electromagnetic radiation during operation at at least one first wavelength (L1) and at at least one second wavelength (L2), wherein the first wavelength (L1) and the second wavelength (L2) differ from one another and are below 500 nm, in particular between 200 nm and 500 nm. Furthermore, the luminous means (1) includes at least one conversion means (3) which converts the first wavelength (L1) at least partly into radiation having a different frequency. The radiation spectrum emitted by the luminous means (1) during operation is metameric with respect to a black body spectrum. Such a luminous means makes it possible to choose the first wavelength and the second wavelength in such a way that a high color rendering quality and a high efficiency of the luminous means can be realized simultaneously.
摘要翻译：一种发光装置（1），包括至少一个在至少一个第一波长（L1）和至少一个第二波长（L2）的操作期间发射电磁辐射的光电子半导体器件，其中第一波长（L1）和第二波长（L2）彼此不同，低于500nm，特别是在200nm和500nm之间。此外，发光装置（1）包括至少一个转换装置（3），其将第一波长（L1）至少部分地转换成具有不同频率的辐射。在运行期间由发光装置（1）发射的辐射光谱相对于黑体光谱是相同的。这样的发光装置使得可以选择第一波长和第二波长，使得可以同时实现发光装置的高显色质量和高效率。

8. 发明申请

US20100258892A1 Radiation Receiver and Method of Producing a Radiation Receiver 失效
标题翻译：辐射接收器和辐射接收器的制作方法
公开(公告)号：US20100258892A1
公开(公告)日：2010-10-14
申请号：US12746121
申请日：2008-12-17
申请人： Rainer Butendeich , Reiner Windisch
发明人： Rainer Butendeich , Reiner Windisch
IPC分类号： H01L27/146 , H01L31/18 , H01L31/02
CPC分类号： H01L31/03529 , H01L31/02162 , H01L31/105 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A radiation receiver has a semiconductor body including a first active region and a second active region, which are provided in each case for detecting radiation. The first active region and the second active region are spaced vertically from one another. A tunnel region is arranged between the first active region and the second active region. The tunnel region is connected electrically conductively with a land, which is provided between the first active region and the second active region for external electrical contacting of the semiconductor body. A method of producing a radiation receiver is additionally indicated.
摘要翻译：辐射接收器具有包括第一有源区和第二有源区的半导体本体，每个半导体本体设置用于检测辐射。第一有源区和第二有源区彼此垂直地间隔开。隧道区域布置在第一有源区域和第二有源区域之间。隧道区域与设置在第一有源区域和第二有源区域之间的焊盘电连接，用于半导体本体的外部电接触。附加地示出了产生辐射接收器的方法。

9. 发明授权

US07692204B2 Radiation emitting semi-conductor element 有权
标题翻译：辐射发射半导体元件
公开(公告)号：US07692204B2
公开(公告)日：2010-04-06
申请号：US10567883
申请日：2004-07-30
申请人： Wilhelm Stein , Reiner Windisch , Ralph Wirth , Ines Pietzonka
发明人： Wilhelm Stein , Reiner Windisch , Ralph Wirth , Ines Pietzonka
IPC分类号： H01L29/08
CPC分类号： H01L33/40 , H01L33/02
摘要： A radiation-emitting semiconductor component with a semiconductor body, including a first principal surface (5), a second principal surface (9) and a semiconductor layer sequence (4) with an electromagnetic radiation generating active zone (7), in which the semiconductor layer sequence (4) is disposed between the first and the second principal surfaces (5, 9), a first current spreading layer (3) is disposed on the first principal surface (5) and electrically conductively connected to the semiconductor layer sequence (4), and a second current spreading layer (10) is disposed on the second principal surface (9) and electrically conductively connected to the semiconductor layer sequence (4).
摘要翻译：一种具有半导体主体的辐射发射半导体部件，包括第一主表面（5），第二主表面（9）和具有电磁辐射产生有源区（7）的半导体层序列（4），其中半导体层序列（4）设置在第一和第二主表面（5,9）之间，第一电流扩散层（3）设置在第一主表面（5）上并与半导体层序列（4）导电连接），并且第二电流扩展层（10）设置在第二主表面（9）上并与半导体层序列（4）导电连接。

10. 发明申请

US20090173961A1 Led Semiconductor Body and Use of an Led Semiconductor body 有权
标题翻译： LED半导体主体和使用的LED半导体主体
公开(公告)号：US20090173961A1
公开(公告)日：2009-07-09
申请号：US12087293
申请日：2006-12-13
申请人： Reiner Windisch , Günther Gröninger , Peter Heidborn , Christian Jung , Walter Wegleiter
发明人： Reiner Windisch , Günther Gröninger , Peter Heidborn , Christian Jung , Walter Wegleiter
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L25/0756 , H01L33/0016 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： An LED semiconductor body comprising a first radiation-generating active layer and a second radiation-generating active layer, the first active layer and the second active layer being arranged one above another in the vertical direction.
摘要翻译：一种LED半导体本体，包括第一辐射生成有源层和第二辐射生成有源层，所述第一有源层和所述第二有源层在垂直方向上彼此上下布置。

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