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2. 发明申请

US20080093334A1 METHOD OF PRODUCING THIN FILM TRANSISTOR SUBSTRATE 审中-公开
标题翻译：生产薄膜晶体管基板的方法
公开(公告)号：US20080093334A1
公开(公告)日：2008-04-24
申请号：US11874098
申请日：2007-10-17
申请人： Seung-ha Choi , Sang-gab Kim , Min-seok Oh , Shin-il Choi , Dae-ok Kim , Hong-kee Chin , Young-ho Jeong , Yu-gwang Jeong
发明人： Seung-ha Choi , Sang-gab Kim , Min-seok Oh , Shin-il Choi , Dae-ok Kim , Hong-kee Chin , Young-ho Jeong , Yu-gwang Jeong
IPC分类号： H01B13/00
CPC分类号： H01L27/1288 , H01L27/1214
摘要： A method of producing a thin film transistor substrate to prevent an interconnection from being corroded during a dry etching process includes sequentially forming on an insulating substrate a gate interconnection, a gate insulating layer, an active layer, a conductive layer for a data interconnection, and a photoresist pattern including a first region and a second region, etching the conductive layer for the data interconnection using the photoresist pattern as an etching mask to form a conductive layer pattern for source/drain electrodes, etching the active layer using the photoresist pattern as the etching mask to form an active layer pattern, removing the second region of the photoresist pattern, dry etching the conductive layer pattern for the source/drain electrodes under the second region using the photoresist pattern as the etching mask and etching gas, etching a portion of the active layer pattern using the photoresist pattern as the etching mask, and physically removing the reaction byproduct using a reaction byproduct removal agent so that external force is applied to the etching gas and the reaction byproduct of the conductive layer pattern for the source/drain electrodes.
摘要翻译：制造薄膜晶体管基板以防止在干法蚀刻工艺中被互连的腐蚀的方法包括：在绝缘基板上依次形成栅极互连，栅极绝缘层，有源层，用于数据互连的导电层，以及包括第一区域和第二区域的光致抗蚀剂图案，使用光致抗蚀剂图案蚀刻用于数据互连的导电层作为蚀刻掩模，以形成用于源/漏电极的导电层图案，使用光致抗蚀剂图案蚀刻活性层作为蚀刻掩模以形成有源层图案，去除光致抗蚀剂图案的第二区域，使用光致抗蚀剂图案作为蚀刻掩模和蚀刻气体，在第二区域下干蚀刻用于源/漏电极的导电层图案，蚀刻部分使用光致抗蚀剂图案作为蚀刻掩模的有源层图案，并物理去除r 使用反应副产物除去剂的副产物使得外力施加到蚀刻气体和用于源/漏电极的导电层图案的反应副产物。

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