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1. 发明申请

US20170310958A1 Method and Apparatus of Video Coding with Prediction Offset 审中-公开
公开(公告)号：US20170310958A1
公开(公告)日：2017-10-26
申请号：US15521499
申请日：2015-11-04
申请人： Han HUANG , Ching-Yeh CHEN , Chih-Wei HSU
发明人： Han HUANG , Ching-Yeh CHEN , Chih-Wei HSU
IPC分类号： H04N19/105 , H04N19/176 , H04N19/196 , H04N19/70
CPC分类号： H04N19/105 , H04N19/139 , H04N19/176 , H04N19/197 , H04N19/198 , H04N19/593 , H04N19/70
摘要： A method and apparatus for video encoding and decoding with prediction offset in a video coding system are disclosed. A prediction offset for a current block is derived from a reconstructed residual signal of one or more coded blocks. At the encoder side, a residual signal for the current block is calculated by subtracting a prediction signal and the prediction offset from an original signal of the current block, and the residual signal is encoded to generate an encoded bitstream. At the decoder side, a residual signal for the current block is obtained from input data, a reconstructed signal for the current block is calculated by adding a prediction signal and the prediction offset to the residual signal, and the current block is decoded using the reconstructed signal.

2. 发明申请

US20130144423A1 SYSTEMS AND METHODS OF AUTOMATIC BOUNDARY CONTROL FOR SEMICONDUCTOR PROCESSES 有权
标题翻译：半导体工艺自动边界控制系统与方法
公开(公告)号：US20130144423A1
公开(公告)日：2013-06-06
申请号：US13311601
申请日：2011-12-06
申请人： Chih-Wei HSU , Mei-Jen WU , Yen-Di TSEN , Jo Fei WANG , Jong-I MOU , Chin-Hsiang LIN
发明人： Chih-Wei HSU , Mei-Jen WU , Yen-Di TSEN , Jo Fei WANG , Jong-I MOU , Chin-Hsiang LIN
IPC分类号： G06F19/00
CPC分类号： G05B19/18 , G05B2219/45031 , H01L22/20
摘要： A system and method of automatically calculating boundaries for a semiconductor fabrication process. The method includes selecting a first parameter for monitoring during a semiconductor fabrication process. A first set of values for the first parameter are received and a group value of the first set is determined. Each value in the first set of values is normalized. A first weighting factor is selected based on a number of values in the first set. The embodiment also includes generating a first and a second boundary value as a function of the weighting factor, the first set normalized values and the group value of the first set and applying the first and second boundary values to control the semiconductor fabrication process.
摘要翻译：一种自动计算半导体制造工艺边界的系统和方法。该方法包括在半导体制造过程中选择用于监测的第一参数。接收第一参数的第一组值，并确定第一组的组值。第一组值中的每个值都被归一化。基于第一组中的值的数量来选择第一加权因子。该实施例还包括根据加权因子，第一集合归一化值和第一组的组值产生第一和第二边界值，并施加第一和第二边界值以控制半导体制造过程。

3. 发明申请

US20130261963A1 ROAD SIDE DATA EXCHANGE NET AND METHOD THEREOF 有权
标题翻译：道路数据交换网及其方法
公开(公告)号：US20130261963A1
公开(公告)日：2013-10-03
申请号：US13491117
申请日：2012-06-07
申请人： Yu-Tsen HSIEH , Chih-Wei HSU , Yuan-Po CHENG , Ming-Jer TSAI
发明人： Yu-Tsen HSIEH , Chih-Wei HSU , Yuan-Po CHENG , Ming-Jer TSAI
IPC分类号： G01C21/26
CPC分类号： G01C21/26 , G01C21/02 , G01P3/66 , G01S5/0081 , G01S19/07
摘要： A road side data exchange net and method thereof is provided in an embodiment of the present invention. The road side data exchange net includes a plurality of road side data exchange devices. The road side data exchange devices are set on neighboring roads separately. The road side data exchange device includes a positioning system for receiving satellite data regularly; a calculator for calculating a calibration value of the satellite data to generate an analyzed result data; a database for storing the analyzed result data. Further each of the road side data exchange devices broadcasts the analyzed result data from its database to all of neighboring road side data exchange devices to provide the analyzed result data to an electronic device.
摘要翻译：在本发明的实施例中提供了路侧数据交换网及其方法。道路侧数据交换网包括多个道路侧数据交换装置。道路侧数据交换装置分别设置在相邻道路上。路侧数据交换装置包括定时接收卫星数据的定位系统; 用于计算卫星数据的校准值以产生分析结果数据的计算器; 用于存储分析结果数据的数据库。此外，每个路侧数据交换设备将分析的结果数据从其数据库广播到所有相邻的路侧数据交换设备，以将分析的结果数据提供给电子设备。

4. 发明申请

US20110227152A1 TRENCH DMOS DEVICE WITH IMPROVED TERMINATION STRUCTURE FOR HIGH VOLTAGE APPLICATIONS 有权
标题翻译： TRENCH DMOS器件具有改进的高压应用终止结构
公开(公告)号：US20110227152A1
公开(公告)日：2011-09-22
申请号：US12909033
申请日：2010-10-21
申请人： Chih-Wei HSU , Florin UDREA , Yih-Yin LIN
发明人： Chih-Wei HSU , Florin UDREA , Yih-Yin LIN
IPC分类号： H01L27/06
CPC分类号： H01L29/7811 , H01L29/0615 , H01L29/063 , H01L29/0661 , H01L29/407 , H01L29/66143 , H01L29/7813 , H01L29/872 , H01L29/8725
摘要： A termination structure for a power transistor includes a semiconductor substrate having an active region and a termination region. The substrate has a first type of conductivity. A termination trench is located in the termination region and extends from a boundary of the active region to within a certain distance of an edge of the semiconductor substrate. A doped region has a second type of conductivity disposed in the substrate below the termination trench. A MOS gate is formed on a sidewall adjacent the boundary. The doped region extends from below a portion of the MOS gate spaced apart from the boundary toward a remote sidewall of the termination trench. A termination structure oxide layer is formed on the termination trench and covers a portion of the MOS gate and extends toward the edge of the substrate. A first conductive layer is formed on a backside surface of the semiconductor substrate. A second conductive layer is formed atop the active region, an exposed portion of the MOS gate, and extends to cover at least a portion of the termination structure oxide layer.
摘要翻译：功率晶体管的端接结构包括具有有源区和端接区的半导体衬底。衬底具有第一类导电性。终端沟槽位于终端区域中并且从有源区域的边界延伸到半导体衬底的边缘的一定距离内。掺杂区域具有设置在终端沟槽下方的衬底中的第二类型的导电体。在与边界相邻的侧壁上形成MOS栅极。掺杂区域从与边界间隔开的部分MOS栅极的下方延伸到终端沟槽的远侧侧壁。端接结构氧化物层形成在终端沟槽上并且覆盖MOS栅极的一部分并朝向衬底的边缘延伸。第一导电层形成在半导体衬底的背面上。第二导电层形成在有源区顶部，MOS栅极的暴露部分的顶部，并延伸以覆盖端接结构氧化物层的至少一部分。

5. 发明申请

US20130205599A1 SLIDER FOR A CUTTER 有权
标题翻译：切刀滑块
公开(公告)号：US20130205599A1
公开(公告)日：2013-08-15
申请号：US13586101
申请日：2012-08-15
申请人： Chih-Wei HSU
发明人： Chih-Wei HSU
IPC分类号： B26B1/08
CPC分类号： B26B5/002
摘要： A slider has an upper sliding element, a lower sliding element and a resilient tab. The upper sliding element has two first engaging segments disposed on an inner side of the upper sliding element. The lower sliding element has two second engaging segments disposed on an outer side facing the inner side of the upper sliding element and engaging the first engaging segments. A tab holding base is formed on and protrudes from the outer side of the lower sliding element and has a chamber defined in the tab holding base. The resilient tab is held in the chamber in the lower sliding element and has two legs. Accordingly, a slider having a structure in a closed condition is provided to prevent objects from entering into the chamber to interfere the operation of the resilient tab and the operation of the slider is smooth.
摘要翻译：滑块具有上滑动元件，下滑动元件和弹性凸片。上滑动元件具有设置在上滑动元件的内侧上的两个第一接合段。下滑动元件具有两个第二接合段，其设置在面向上滑动元件的内侧的外侧上并与第一接合段接合。在下滑动元件的外侧形成突出部保持基座，并且在该突出部保持基部具有限定的室。弹性片保持在下滑动元件的腔室中并具有两个腿。因此，具有处于闭合状态的结构的滑块被设置成防止物体进入室以干扰弹性片的操作，并且滑块的操作是平滑的。

6. 发明申请

US20120130926A1 NETWORK CLASSIFICATION LINK SYSTEM, METHOD, AND COMPUTER RECORDING MEDIUM 审中-公开
标题翻译：网络分类链接系统，方法和计算机记录介质
公开(公告)号：US20120130926A1
公开(公告)日：2012-05-24
申请号：US12970644
申请日：2010-12-16
申请人： Chih-Wei HSU , Sheng-Tzong Cheng
发明人： Chih-Wei HSU , Sheng-Tzong Cheng
IPC分类号： G06F15/18
CPC分类号： H04L69/24
摘要： A network classification link system, method, and computer recording medium are presented. The system includes: an operation interface, for providing an execution item menu and a network sheet; an input unit, for obtaining a first operation signal and a second operation signal to select an operating item and a network connection option corresponding to the first operation signal and the second operation signal respectively; a storage unit, for storing a network connection class, the operating item, and the network connection option; and a processing unit, for performing learning training through the operating item and the network connection option, generating a network classification link model according to the network connection class, the operating item, and the network connection, and judging a use weight of the network classification link model to establish an automatic network link mode.
摘要翻译：提出了一种网络分类链路系统，方法和计算机记录介质。该系统包括：用于提供执行项目菜单和网络表的操作界面; 输入单元，用于分别获得与第一操作信号和第二操作信号相对应的第一操作信号和第二操作信号以选择操作项和网络连接选项; 存储单元，用于存储网络连接类别，所述操作项目和所述网络连接选项; 以及处理单元，用于通过操作项目和网络连接选项进行学习训练，根据网络连接类别，操作项目和网络连接生成网络分类链接模型，并且判断网络分类的使用权重链接模型建立自动网络链接模式。

7. 发明申请

US20120098082A1 SCHOTTKY RECTIFIER 有权
标题翻译：肖特基整流器
公开(公告)号：US20120098082A1
公开(公告)日：2012-04-26
申请号：US13222249
申请日：2011-08-31
申请人： Chih-Wei HSU , Florin UDREA , Yih-Yin LIN
发明人： Chih-Wei HSU , Florin UDREA , Yih-Yin LIN
IPC分类号： H01L29/872 , H01L21/329
CPC分类号： H01L29/66143 , H01L21/22 , H01L21/265 , H01L29/0619 , H01L29/872 , H01L29/8725
摘要： A semiconductor rectifier includes a semiconductor substrate having a first type of conductivity. A first layer, which is formed on the substrate, has the first type of conductivity and is more lightly doped than the substrate. A second layer having a second type of conductivity is formed on the substrate and a metal layer is disposed over the second layer. The second layer is lightly doped so that a Schottky contact is formed between the metal layer and the second layer. A first electrode is formed over the metal layer and a second electrode is formed on a backside of the substrate.
摘要翻译：半导体整流器包括具有第一类导电性的半导体衬底。形成在基板上的第一层具有第一类导电性，并且比衬底更轻掺杂。在基板上形成具有第二导电类型的第二层，并且金属层设置在第二层上。第二层被轻掺杂，使得在金属层和第二层之间形成肖特基接触。第一电极形成在金属层的上方，第二电极形成在基板的背面。

8. 发明申请

US20090265779A1 TIME-SWITCH DEVICE AND METHOD FOR THE SAME 审中-公开
标题翻译：时间切换装置及其方法
公开(公告)号：US20090265779A1
公开(公告)日：2009-10-22
申请号：US12105142
申请日：2008-04-17
申请人： Chih-Wei HSU
发明人： Chih-Wei HSU
IPC分类号： G06F21/00 , H04L9/32 , G06F1/26
CPC分类号： H04L9/3234 , G06F1/14 , G06F1/181 , G06F1/26 , G06F21/81 , G06F2221/2153 , H04L9/3226 , H04L2209/80
摘要： A time-switch device and method for the same is provided. The time-switch device mainly comprises a microprocessor unit, and an input element and a key secret element that are connected to the microprocessor unit. The microprocessor unit is connected to a data storage unit storing the time switch method and to a power control unit to control the connected host turning ON or OFF in a predetermined time of the schedule set in the time switch method stored in the time-switch device. Thus, the time-switch device and method for the same may not only force a user to use the host in a limited service time, but also prevent data in the host from being leaked.
摘要翻译：提供了一种时间开关装置及其方法。时间切换装置主要包括微处理器单元和连接到微处理器单元的输入元件和密钥秘密元件。微处理器单元连接到存储时间切换方法的数据存储单元和功率控制单元，以在存储在时间切换装置中的时间切换方法中设定的时间表的预定时间内控制连接的主机接通或关闭。因此，时间切换装置及其方法可能不仅强制用户在有限的服务时间内使用主机，而且还可以防止主机中的数据泄漏。

9. 发明申请

US20110227151A1 TRENCH DMOS DEVICE WITH IMPROVED TERMINATION STRUCTURE FOR HIGH VOLTAGE APPLICATIONS 有权
标题翻译： TRENCH DMOS器件具有改进的高压应用终止结构
公开(公告)号：US20110227151A1
公开(公告)日：2011-09-22
申请号：US12724771
申请日：2010-03-16
申请人： Chih-Wei HSU , Florin UDREA , Yih-Yin LIN
发明人： Chih-Wei HSU , Florin UDREA , Yih-Yin LIN
IPC分类号： H01L27/06
CPC分类号： H01L29/407 , H01L29/0615 , H01L29/0661 , H01L29/404 , H01L29/66143 , H01L29/7811 , H01L29/7813 , H01L29/872 , H01L29/8725
摘要： A termination structure is provided for a power transistor. The termination structure includes a semiconductor substrate having an active region and a termination region. The substrate has a first type of conductivity. A termination trench is located in the termination region and extends from a boundary of the active region toward an edge of the semiconductor substrate. A doped region having a second type of conductivity is disposed in the substrate below the termination trench. A MOS gate is formed on a sidewall adjacent the boundary. The doped region extends from below a portion of the MOS gate spaced apart from the boundary toward the edge of the semiconductor substrate. A termination structure oxide layer is formed on the termination trench covering a portion of the MOS gate and extends toward the edge of the substrate. A first conductive layer is formed on a backside surface of the semiconductor substrate and a second conductive layer is formed atop the active region, an exposed portion of the MOS gate, and extends to cover a portion of the termination structure oxide layer.
摘要翻译：为功率晶体管提供端接结构。端接结构包括具有有源区和端接区的半导体衬底。衬底具有第一类导电性。终端沟槽位于终端区域中并且从有源区域的边界朝向半导体衬底的边缘延伸。具有第二类型的导电性的掺杂区域设置在终端沟槽下方的衬底中。在与边界相邻的侧壁上形成MOS栅极。掺杂区域从与栅极间隔开的部分MOS栅极向半导体衬底的边缘延伸。端接结构氧化物层形成在覆盖MOS栅极的一部分并朝向衬底边缘延伸的端接沟槽上。第一导电层形成在半导体衬底的背侧表面上，并且第二导电层形成在有源区顶部，MOS栅极的暴露部分之上，并延伸以覆盖端接结构氧化物层的一部分。

10. 发明申请

US20100121610A1 DIGITAL FILTERING SYSTEM, METHOD, AND PROGRAM THEREOF 有权
标题翻译：数字滤波系统，方法和程序
公开(公告)号：US20100121610A1
公开(公告)日：2010-05-13
申请号：US12333862
申请日：2008-12-12
申请人： Chih-Wei HSU
发明人： Chih-Wei HSU
IPC分类号： H04B15/00 , H03M1/12 , H04N7/26
CPC分类号： H03H17/0213 , A61B5/021 , A61B5/04017 , A61B5/14551 , H03H17/0294
摘要： A digital filtering system, method, and program thereof are described. In the system, firstly a sensor obtains an analog physiological signal, a quantizing module transforms the physiological signal to a digitalized frequency domain signal, and then a specification parameter module obtains a feature model satisfying the frequency domain signal by matching, for a deciding process module to determine which decision parameter should be used. A filter-Clustering management module starts a relevant filter module according to the matching decision parameter to filter the frequency domain signal. On the contrary, when the frequency domain signal is an abnormal signal, the quantizing module outputs the abnormal signal to a back-end server system. The server system builds more than one updating parameter to update all the decision parameters and feature parameters. Therefore, the decision parameters and the feature parameters are updated on real time, and the physiological signal filtering result is quickly obtained.
摘要翻译：描述了数字滤波系统，方法和程序。在系统中，首先，传感器获得模拟生理信号，量化模块将生理信号转换为数字化频域信号，然后指定参数模块通过匹配获得满足频域信号的特征模型，对于决定过程模块以确定应使用哪个决策参数。滤波器 - 聚类管理模块根据匹配决策参数启动相关的滤波器模块，以过滤频域信号。相反，当频域信号是异常信号时，量化模块将异常信号输出到后端服务器系统。服务器系统构建多个更新参数，以更新所有决策参数和特征参数。因此，决策参数和特征参数实时更新，并迅速获得生理信号滤波结果。

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