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1. 发明申请

US20090154027A1 AP FREE LAYER CPP SENSOR WITH TOP APERTURE 有权
标题翻译： AP自由层CPP传感器与顶级APERTURE
公开(公告)号：US20090154027A1
公开(公告)日：2009-06-18
申请号：US11957466
申请日：2007-12-16
申请人： Hamid Balamane , Jeffrey R. Childress , Robert E. Fontana, JR. , Jordan A. Katine , Neil Smith
发明人： Hamid Balamane , Jeffrey R. Childress , Robert E. Fontana, JR. , Jordan A. Katine , Neil Smith
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B2005/3996
摘要： Read sensors and associated methods of fabrication are disclosed. A read sensor as disclosed herein includes a first shield, a sensor stack including an antiparallel (AP) free layer, and insulating material disposed on the sensor stack. A aperture is formed through the insulating material above the sensor stack so that a subsequently deposited second shield is electrically coupled to the sensor stack through the aperture. The width of the aperture controls the current density that is injected into the top of the sensor stack. Also, hard bias structures may be formed to be electrically coupled to the sensor stack. The electrical coupling of the sensor stack and the hard bias structures allows current to laterally spread out as it passes through the sensor stack, and hence, provides a non-uniform current density.
摘要翻译：公开了传感器和相关的制造方法。本文公开的读取传感器包括第一屏蔽层，包括反平行（AP）自由层的传感器堆叠以及设置在传感器堆叠上的绝缘材料。通过传感器堆叠上方的绝缘材料形成孔，使得随后沉积的第二屏蔽件通过孔电耦合到传感器堆叠。光圈的宽度控制注入到传感器叠层顶部的电流密度。此外，可以形成硬偏置结构以电耦合到传感器堆叠。传感器堆叠和硬偏置结构的电耦合允许电流在其通过传感器堆叠时横向展开，因此提供不均匀的电流密度。

2. 发明授权

US08335056B2 CPP sensors with hard bias structures that shunt sense current towards a shield 有权
标题翻译：具有硬偏压结构的CPP传感器将屏蔽层的感应电流分流
公开(公告)号：US08335056B2
公开(公告)日：2012-12-18
申请号：US11957466
申请日：2007-12-16
申请人： Hamid Balamane , Jeffrey R. Childress , Robert E. Fontana, Jr. , Jordan A. Katine , Neil Smith
发明人： Hamid Balamane , Jeffrey R. Childress , Robert E. Fontana, Jr. , Jordan A. Katine , Neil Smith
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B2005/3996
摘要： Read sensors and associated methods of fabrication are disclosed. A read sensor as disclosed herein includes a first shield, a sensor stack including an antiparallel (AP) free layer, and insulating material disposed on the sensor stack. A aperture is formed through the insulating material above the sensor stack so that a subsequently deposited second shield is electrically coupled to the sensor stack through the aperture. The width of the aperture controls the current density that is injected into the top of the sensor stack. Also, hard bias structures may be formed to be electrically coupled to the sensor stack. The electrical coupling of the sensor stack and the hard bias structures allows current to laterally spread out as it passes through the sensor stack, and hence, provides a non-uniform current density.
摘要翻译：公开了传感器和相关的制造方法。本文公开的读取传感器包括第一屏蔽层，包括反平行（AP）自由层的传感器堆叠以及设置在传感器堆叠上的绝缘材料。通过传感器堆叠上方的绝缘材料形成孔，使得随后沉积的第二屏蔽件通过孔电耦合到传感器堆叠。光圈的宽度控制注入到传感器叠层顶部的电流密度。此外，可以形成硬偏置结构以电耦合到传感器堆叠。传感器堆叠和硬偏置结构的电耦合允许电流在其通过传感器堆叠时横向展开，因此提供不均匀的电流密度。

3. 发明授权

US06778364B2 Current-in-plane magnetoresistive sensor with longitudinal biasing layer having a nonmagnetic oxide central region and method for fabrication of the sensor 失效
标题翻译：具有具有非磁性氧化物中心区域的纵向偏置层的电流平面内磁阻传感器和用于制造传感器的方法
公开(公告)号：US06778364B2
公开(公告)日：2004-08-17
申请号：US10230903
申请日：2002-08-28
申请人： Elizabeth A. Dobisz , Robert E. Fontana, Jr. , James L. Nix , Neil Smith
发明人： Elizabeth A. Dobisz , Robert E. Fontana, Jr. , James L. Nix , Neil Smith
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3116 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044
摘要： A current-in-the-plane (CIP) giant magnetoresistive (GMR) spin valve sensor has its free layer magnetization stabilized by longitudinal biasing through the use of free layer end-region antiferromagnetic exchange coupling. An antiparallel coupling (APC) layer, such as Ru, is formed on the free layer and a ferromagnetic bias layer is formed on the APC layer. The bias layer is a continuous layer that extends across the entire width of the free layer. The central region of the bias layer is formed of nonmagnetic oxides of one or more of the elements making up the bias layer, with the bias layer end regions remaining ferromagnetic. The oxidized central region of the bias layer defines the central active trackwidth region of the underlying free layer. The ferromagnetic end regions of the bias layer are antiferromagnetically coupled across the APC layer to the corresponding underlying free layer end regions to provide the longitudinal biasing.
摘要翻译：电流平面（CIP）巨磁阻（GMR）自旋阀传感器通过使用自由层末端反铁磁交换耦合的纵向偏置使其自由层磁化稳定。在自由层上形成诸如Ru的反平行耦合（APC）层，并且在APC层上形成铁磁偏置层。偏置层是在自由层的整个宽度上延伸的连续层。偏置层的中心区域由构成偏置层的一个或多个元件的非磁性氧化物形成，偏置层端部区域保持铁磁性。偏置层的氧化中心区域定义了下层自由层的中心主动轨道宽度区域。偏置层的铁磁端区域跨越APC层反铁磁耦合到相应的下游自由层端部区域以提供纵向偏置。

4. 发明授权

US06972935B2 Current-in-plane magnetoresistive sensor with longitudinal biasing layer having a nonmagnetic oxide central region and method for fabrication of the sensor 失效
公开(公告)号：US06972935B2
公开(公告)日：2005-12-06
申请号：US10917982
申请日：2004-08-13
申请人： Elizabeth A. Dobisz , Robert E. Fontana, Jr. , James L. Nix , Neil Smith
发明人： Elizabeth A. Dobisz , Robert E. Fontana, Jr. , James L. Nix , Neil Smith
IPC分类号： G01R33/09 , G11B5/012 , G11B5/31 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3116 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044
摘要： A current-in-the-plane (CIP) giant magnetoresistive (GMR) spin valve sensor has its free layer magnetization stabilized by longitudinal biasing through the use of free layer end-region antiferromagnetic exchange coupling. An antiparallel coupling (APC) layer, such as Ru, is formed on the free layer and a ferromagnetic bias layer is formed on the APC layer. The bias layer is a continuous layer that extends across the entire width of the free layer. The central region of the bias layer is formed of nonmagnetic oxides of one or more of the elements making up the bias layer, with the bias layer end regions remaining ferromagnetic. The oxidized central region of the bias layer defines the central active track-width region of the underlying free layer. The ferromagnetic end regions of the bias layer are antiferromagnetically coupled across the APC layer to the corresponding underlying free layer end regions to provide the longitudinal biasing.

5. 发明授权

US07957107B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-free layer structure and low current-induced noise 有权
标题翻译：具有反平行自由层结构和低电流感应噪声的电流垂直平面（CPP）磁阻传感器
公开(公告)号：US07957107B2
公开(公告)日：2011-06-07
申请号：US12502764
申请日：2009-07-14
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has an antiparallel free (APF) structure as the free layer and a specific direction for the applied bias or sense current. The (APF) structure has a first free ferromagnetic (FL1), a second free ferromagnetic layer (FL2), and an antiparallel (AP) coupling (APC) layer that couples FL1 and FL2 together antiferromagnetically with the result that FL1 and FL2 have substantially antiparallel magnetization directions and rotate together in the presence of a magnetic field. The thickness of FL1 is preferably greater than the spin-diffusion length of the electrons in the FL1 material. The minimum thickness for FL2 is a thickness resulting in a FL2 magnetic moment equivalent to at least 10 Å Ni80Fe20 and preferably to at least 15 Å Ni80Fe20. The CPP sensor operates specifically with the conventional sense current (opposite the electron current) directed from the pinned ferromagnetic layer to the APF structure, which results in suppression of current-induced noise.
摘要翻译：电流垂直平面（CPP）磁阻传感器具有作为自由层的反向平行自由（APF）结构和施加的偏置或感测电流的特定方向。（APF）结构具有第一自由铁磁（FL1），第二自由铁磁层（FL2）和反FL-FL2与FL2耦合的反并联（AP）耦合（APC）层，其结果是FL1和FL2具有实质上反平行磁化方向，并且在存在磁场的情况下一起旋转。 FL1的厚度优选大于FL1材料中的电子的自旋扩散长度。 FL2的最小厚度是导致等于至少10埃NiFeFe 2的FL2磁矩并且优选至少为15埃的Ni38Fe20的厚度。 CPP传感器与从钉扎铁磁层引导到APF结构的常规感测电流（与电子电流相反）特别地工作，这导致电流引起的噪声的抑制。

6. 发明授权

US08233247B2 Scissoring-type current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensors with damped free layer structures 有权
标题翻译：具有阻尼自由层结构的剪切型电流 - 垂直于平面的巨磁阻（CPP-GMR）传感器
公开(公告)号：US08233247B2
公开(公告)日：2012-07-31
申请号：US12101453
申请日：2008-04-11
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B5/3932 , G11B2005/3996
摘要： A “scissoring-type” current-perpendicular-to-the-plane giant magnetoresistive (CPP-GMR) sensor has magnetically damped free layers. In one embodiment each of the two free layers is in contact with a damping layer that comprises Pt or Pd, or a lanthanoid (an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Th, Yb, and Lu). Each of the two free layers has one of its surfaces in contact with the sensor's electrically conducting nonmagnetic spacer layer and its other surface in contact with its associated damping layer. A nonmagnetic film may be located between each free layer and its associated damping layer. In another embodiment the damping element is present as a dopant or impurity in each of the two free layers. In another embodiment a nanolayer of the damping element is located within each of the two free layers.
摘要翻译： “剪切型”电流垂直于平面的巨磁阻（CPP-GMR）传感器具有磁阻自由层。在一个实施方案中，两个自由层中的每一个与包含Pt或Pd或镧系元素（选自La，Ce，Pr，Nd，Pm，Sm，Eu，Gd， Tb，Dy，Ho，Er，Th，Yb和Lu）。两个自由层中的每一个具有与传感器的导电非磁性间隔层接触的其一个表面，并且其另一个表面与其相关联的阻尼层接触。非磁性膜可以位于每个自由层与其相关阻尼层之间。在另一个实施例中，阻尼元件作为两个自由层中的每一个中的掺杂剂或杂质存在。在另一个实施方案中，阻尼元件的纳米层位于两个自由层的每一个内。

7. 发明申请

US20090268353A1 CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH ANTIPARALLEL-FREE LAYER STRUCTURE AND LOW CURRENT-INDUCED NOISE 有权
标题翻译：具有无阻抗层结构和低电流感应噪声的电流 - 平面（CPP）磁传感器
公开(公告)号：US20090268353A1
公开(公告)日：2009-10-29
申请号：US12502764
申请日：2009-07-14
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has an antiparallel free (APF) structure as the free layer and a specific direction for the applied bias or sense current. The (APF) structure has a first free ferromagnetic (FL1), a second free ferromagnetic layer (FL2), and an antiparallel (AP) coupling (APC) layer that couples FL1 and FL2 together antiferromagnetically with the result that FL1 and FL2 have substantially antiparallel magnetization directions and rotate together in the presence of a magnetic field. The thickness of FL1 is preferably greater than the spin-diffusion length of the electrons in the FL1 material. The minimum thickness for FL2 is a thickness resulting in a FL2 magnetic moment equivalent to at least 10 Å Ni80Fe20 and preferably to at least 15 Å Ni80Fe20. The CPP sensor operates specifically with the conventional sense current (opposite the electron current) directed from the pinned ferromagnetic layer to the APF structure, which results in suppression of current-induced noise.
摘要翻译：电流垂直平面（CPP）磁阻传感器具有作为自由层的反向平行自由（APF）结构和施加的偏置或感测电流的特定方向。（APF）结构具有第一自由铁磁（FL1），第二自由铁磁层（FL2）和反FL-FL2与FL2耦合的反并联（AP）耦合（APC）层，其结果是FL1和FL2具有实质上反平行磁化方向，并且在存在磁场的情况下一起旋转。 FL1的厚度优选大于FL1材料中的电子的自旋扩散长度。 FL2的最小厚度是导致等于至少10埃NiFeFe 2的FL2磁矩并且优选至少为15埃的Ni38Fe20的厚度。 CPP传感器与从钉扎铁磁层引导到APF结构的常规感测电流（与电子电流相反）特别地工作，这导致电流引起的噪声的抑制。

8. 发明申请

US20090257154A1 SCISSORING-TYPE CURRENT-PERPENDICULAR-TO-THE-PLANE GIANT MAGNETORESISTANCE (CPP-GMR) SENSORS WITH DAMPED FREE LAYER STRUCTURES 有权
标题翻译：具有阻尼自由层结构的分类型电流 - 平面到大面积巨磁阻（CPP-GMR）传感器
公开(公告)号：US20090257154A1
公开(公告)日：2009-10-15
申请号：US12101453
申请日：2008-04-11
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
IPC分类号： G11B5/127
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B5/3932 , G11B2005/3996
摘要： A “scissoring-type” current-perpendicular-to-the-plane giant magnetoresistive (CPP-GMR) sensor has magnetically damped free layers. In one embodiment each of the two free layers is in contact with a damping layer that comprises Pt or Pd, or a lanthanoid (an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Th, Yb, and Lu). Each of the two free layers has one of its surfaces in contact with the sensor's electrically conducting nonmagnetic spacer layer and its other surface in contact with its associated damping layer. A nonmagnetic film may be located between each free layer and its associated damping layer. In another embodiment the damping element is present as a dopant or impurity in each of the two free layers. In another embodiment a nanolayer of the damping element is located within each of the two free layers.
摘要翻译： “剪切型”电流垂直于平面的巨磁阻（CPP-GMR）传感器具有磁阻自由层。在一个实施方案中，两个自由层中的每一个与包含Pt或Pd或镧系元素（选自La，Ce，Pr，Nd，Pm，Sm，Eu，Gd， Tb，Dy，Ho，Er，Th，Yb和Lu）。两个自由层中的每一个具有与传感器的导电非磁性间隔层接触的其一个表面，并且其另一个表面与其相关联的阻尼层接触。非磁性膜可以位于每个自由层与其相关阻尼层之间。在另一个实施例中，阻尼元件作为两个自由层中的每一个中的掺杂剂或杂质存在。在另一个实施方案中，阻尼元件的纳米层位于两个自由层的每一个内。

9. 发明授权

US07580229B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-free layer structure and low current-induced noise 失效
标题翻译：具有反平行自由层结构和低电流感应噪声的电流垂直平面（CPP）磁阻传感器
公开(公告)号：US07580229B2
公开(公告)日：2009-08-25
申请号：US11380625
申请日：2006-04-27
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has an antiparallel free (APF) structure as the free layer and a specific direction for the applied bias or sense current. The (APF) structure has a first free ferromagnetic (FL1), a second free ferromagnetic layer (FL2), and an antiparallel (AP) coupling (APC) layer that couples FL1 and FL2 together antiferromagnetically with the result that FL1 and FL2 have substantially antiparallel magnetization directions and rotate together in the presence of a magnetic field. The thicknesses of FL1 and FL2 are chosen to obtain the desired net free layer magnetic moment/area for the sensor, and the thickness of FL1 is preferably chosen to be greater than the spin-diffusion length of the electrons in the FL1 material to maximize the bulk spin-dependent scattering of electrons and thus maximize the sensor signal. The CPP sensor operates specifically with the conventional sense current (opposite the electron current) directed from the pinned ferromagnetic layer to the APF structure, which results in suppression of current-induced noise.
摘要翻译：电流垂直平面（CPP）磁阻传感器具有作为自由层的反向平行自由（APF）结构和施加的偏置或感测电流的特定方向。（APF）结构具有第一自由铁磁（FL1），第二自由铁磁层（FL2）和反FL-FL2与FL2耦合的反并联（AP）耦合（APC）层，其结果是FL1和FL2具有实质上反平行磁化方向，并且在存在磁场的情况下一起旋转。选择FL1和FL2的厚度以获得用于传感器的期望的净自由层磁矩/面积，并且FL1的厚度优选地选择为大于FL1材料中的电子的自旋扩散长度以使电子的体自旋依赖散射，从而使传感器信号最大化。 CPP传感器与从钉扎铁磁层引导到APF结构的常规感测电流（与电子电流相反）特别地工作，这导致电流引起的噪声的抑制。

10. 发明申请

US20130052484A1 CPP-GMR SENSOR WITH CORROSION RESISTENT SPACER LAYER AND HIGHER SIGNAL/NOISE RATIO 有权
标题翻译：具有腐蚀电阻间隔层和高信号/噪声比的CPP-GMR传感器
公开(公告)号：US20130052484A1
公开(公告)日：2013-02-28
申请号：US13222827
申请日：2011-08-31
申请人： Jeffrey R. Childress , John C. Read , Neil Smith
发明人： Jeffrey R. Childress , John C. Read , Neil Smith
IPC分类号： G11B5/33 , B05D5/12
CPC分类号： G11B5/3906 , B82Y10/00 , G11B2005/3996
摘要： A method and apparatus for increasing the electrical resistivity and corrosion resistance of the material forming a spacer layer in current-perpendicular-to-the-plane (CPP) giant magnetoresistive (GMR) sensors. The increased resistivity of the spacer layer, and thus, the CPP-GMR sensor permits a larger voltage across the sensor and a higher signal-to-noise ratio. The increased corrosion resistance of the spacer layer minimizes the effects of exposing the spacer layer to corrosive materials during fabrication. For example, adding tin to silver to form a metallic alloy spacer layer increases the corrosion resistance of the spacer layer and the electrical resisitivity of the CPP-GMR sensor relative to a spacer layer consisting solely of silver. The Ag—Sn alloy permits a larger current to flow through the sensor, which increases the signal-to-noise ratio.
摘要翻译：一种用于增加在电流垂直平面（CPP）巨磁阻（GMR）传感器中形成间隔层的材料的电阻率和耐腐蚀性的方法和装置。间隔层以及因此CPP-GMR传感器的电阻率增加允许传感器两端的电压较大，信噪比更高。隔离层增加的耐腐蚀性最小化在制造期间将间隔层暴露于腐蚀性材料的影响。例如，将锡添加到银以形成金属合金间隔层增加了间隔层的耐腐蚀性和CPP-GMR传感器相对于仅由银构成的间隔层的电阻率。 Ag-Sn合金允许更大的电流流过传感器，这增加了信噪比。

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