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1. 发明授权

US08588570B2 Two-photon-absorption-based silicon waveguide photo-power monitor 失效
标题翻译：双光子吸收型硅波导光功率监视器
公开(公告)号：US08588570B2
公开(公告)日：2013-11-19
申请号：US12895578
申请日：2010-09-30
申请人： Haisheng Rong , I-Wei Andy Hsieh , Mario J. Paniccia
发明人： Haisheng Rong , I-Wei Andy Hsieh , Mario J. Paniccia
IPC分类号： G02B6/12
CPC分类号： H01L22/14 , H01L22/34
摘要： Instead of monitoring the optical power coming out of a waveguide, a direct method of monitoring the optical power inside the waveguide without affecting device or system performance is provided. A waveguide comprises a p-i-n structure which induces a TPA-generated current and may be enhanced with reverse biasing the diode. The TPA current may be measured directly by probing metal contacts provided on the top surface of the waveguide, and may enable wafer-level testing. The p-i-n structures may be implemented at desired points throughout an integrated network, and thus allows probing of different devices for in-situ power monitor and failure analysis.
摘要翻译：提供了监视波导中的光功率而不是监视波导内的光功率而不影响设备或系统性能的直接方法。波导包括p-i-n结构，其诱导TPA产生的电流并且可以通过反向偏置二极管来增强。可以通过探测设置在波导顶表面上的金属触点直接测量TPA电流，并且可以实现晶片级测试。 p-i-n结构可以在整个集成网络中的所需点处实现，并且因此允许探测用于原位功率监测和故障分析的不同设备。

2. 发明授权

US07760422B2 Semiconductor raman ring amplifier 失效
标题翻译：半导体拉曼环形放大器
公开(公告)号：US07760422B2
公开(公告)日：2010-07-20
申请号：US12267501
申请日：2008-11-07
申请人： Ying-hao Kuo , Haisheng Rong , Mario J. Paniccia
发明人： Ying-hao Kuo , Haisheng Rong , Mario J. Paniccia
IPC分类号： H01S5/00 , H04B10/12
CPC分类号： H04B10/2916 , H01S3/0078 , H01S3/06754 , H01S3/06758 , H01S3/06791 , H01S3/094015 , H01S3/1003 , H01S3/302
摘要： A semiconductor-based Raman ring amplifier is disclosed. A method according to aspects of the present invention includes directing a pump optical beam having a pump wavelength and an input pump power level from an optical waveguide into a ring resonator. The optical waveguide and ring resonator are comprised in semiconductor material. A signal optical beam having a signal encoded thereon at a signal wavelength is directed from the optical waveguide into the ring resonator. The pump optical beam is resonated within the ring resonator to increase a power level of the pump optical beam to a power level sufficient to amplify the signal optical beam via stimulated Raman scattering (SRS) within the ring resonator. A free carrier concentration in the optical waveguide and the ring resonator is reduced to reduce attenuation of the pump optical beam and the signal beam.
摘要翻译：公开了一种基于半导体的拉曼环形放大器。根据本发明的方面的方法包括将具有泵浦波长的泵浦光束和来自光波导的输入泵功率电平引导到环形谐振器中。光波导和环形谐振器包含在半导体材料中。在信号波长处编码有信号的信号光束从光波导引导到环形谐振器中。泵浦光束在环形谐振器内谐振，以将泵浦光束的功率电平增加到足以通过环形谐振器内经受激拉曼散射（SRS）放大信号光束的功率电平。降低光波导和环形谐振器中的自由载流子浓度，以减少泵浦光束和信号光束的衰减。

3. 发明授权

US07489439B2 Semiconductor Raman ring amplifier 失效
标题翻译：半导体拉曼环放大器
公开(公告)号：US07489439B2
公开(公告)日：2009-02-10
申请号：US11520533
申请日：2006-09-12
申请人： Ying-hao Kuo , Haisheng Rong , Mario J. Paniccia
发明人： Ying-hao Kuo , Haisheng Rong , Mario J. Paniccia
IPC分类号： H01S4/00 , H01S5/00
CPC分类号： H04B10/2916 , H01S3/0078 , H01S3/06754 , H01S3/06758 , H01S3/06791 , H01S3/094015 , H01S3/1003 , H01S3/302
摘要： A semiconductor-based Raman ring amplifier is disclosed. A method according to aspects of the present invention includes directing a pump optical beam having a pump wavelength and an input pump power level from an optical waveguide into a ring resonator. The optical waveguide and ring resonator are comprised in semiconductor material. A signal optical beam having a signal encoded thereon at a signal wavelength is directed from the optical waveguide into the ring resonator. The pump optical beam is resonated within the ring resonator to increase a power level of the pump optical beam to a power level sufficient to amplify the signal optical beam via stimulated Raman scattering (SRS) within the ring resonator. A free carrier concentration in the optical waveguide and the ring resonator is reduced to reduce attenuation of the pump optical beam and the signal beam.
摘要翻译：公开了一种基于半导体的拉曼环形放大器。根据本发明的方面的方法包括将具有泵浦波长的泵浦光束和来自光波导的输入泵功率电平引导到环形谐振器中。光波导和环形谐振器包含在半导体材料中。在信号波长处编码有信号的信号光束从光波导引导到环形谐振器中。泵浦光束在环形谐振器内谐振，以将泵浦光束的功率电平增加到足以通过环形谐振器内经受激拉曼散射（SRS）放大信号光束的功率水平。降低光波导和环形谐振器中的自由载流子浓度，以减少泵浦光束和信号光束的衰减。

4. 发明授权

US07421200B2 Reduced loss ultra-fast semiconductor modulator and switch 有权
标题翻译：减速超快速半导体调制器和开关
公开(公告)号：US07421200B2
公开(公告)日：2008-09-02
申请号：US11007858
申请日：2004-12-09
申请人： Ansheng Liu , Mario J. Paniccia , Haisheng Rong
发明人： Ansheng Liu , Mario J. Paniccia , Haisheng Rong
IPC分类号： H04J14/00
CPC分类号： H04B10/505 , G02F1/2257 , G02F1/3515 , G02F1/3526
摘要： An optical modulator or switch is disclosed. An apparatus includes an optical splitter disposed in a semiconductor material that splits an optical beam having a first wavelength into first and second portions. The first and second portions of the optical beam are to be directed through first and second optical waveguides, respectively. The first optical waveguide is also optically coupled to receive a pump optical beam to amplify and phase shift the first portion of the optical beam. A diode structure is disposed in the first optical waveguide and is selectively biased to sweep out free carriers from the first optical waveguide generated in response to two photon absorption in the optical waveguide. An optical coupler is disposed in the semiconductor material and is optically coupled to the first and second optical waveguides to combine the first and second portions of the optical beam.
摘要翻译：公开了一种光调制器或开关。一种装置包括设置在半导体材料中的光分路器，其将具有第一波长的光束分成第一和第二部分。光束的第一和第二部分分别被引导通过第一和第二光波导。第一光波导也被光学耦合以接收泵浦光束以放大和相移光束的第一部分。二极管结构设置在第一光波导中，并且被选择性地偏置以从响应于光波导中的两个光子吸收而产生的第一光波导扫出自由载流子。光耦合器设置在半导体材料中并且光学耦合到第一和第二光波导以组合光束的第一和第二部分。

5. 发明申请

US20090067038A1 SEMICONDUCTOR RAMAN RING AMPLIFIER 失效
标题翻译：半导体拉邦放大器
公开(公告)号：US20090067038A1
公开(公告)日：2009-03-12
申请号：US12267501
申请日：2008-11-07
申请人： Ying-hao Kuo , Haisheng Rong , Mario J. Paniccia
发明人： Ying-hao Kuo , Haisheng Rong , Mario J. Paniccia
IPC分类号： H01S3/00
CPC分类号： H04B10/2916 , H01S3/0078 , H01S3/06754 , H01S3/06758 , H01S3/06791 , H01S3/094015 , H01S3/1003 , H01S3/302
摘要： A semiconductor-based Raman ring amplifier is disclosed. A method according to aspects of the present invention includes directing a pump optical beam having a pump wavelength and an input pump power level from an optical waveguide into a ring resonator. The optical waveguide and ring resonator are comprised in semiconductor material. A signal optical beam having a signal encoded thereon at a signal wavelength is directed from the optical waveguide into the ring resonator. The pump optical beam is resonated within the ring resonator to increase a power level of the pump optical beam to a power level sufficient to amplify the signal optical beam via stimulated Raman scattering (SRS) within the ring resonator. A free carrier concentration in the optical waveguide and the ring resonator is reduced to reduce attenuation of the pump optical beam and the signal beam.
摘要翻译：公开了一种基于半导体的拉曼环形放大器。根据本发明的方面的方法包括将具有泵浦波长的泵浦光束和来自光波导的输入泵功率电平引导到环形谐振器中。光波导和环形谐振器包含在半导体材料中。在信号波长处编码有信号的信号光束从光波导引导到环形谐振器中。泵浦光束在环形谐振器内谐振，以将泵浦光束的功率电平增加到足以通过环形谐振器内经受激拉曼散射（SRS）放大信号光束的功率水平。降低光波导和环形谐振器中的自由载流子浓度，以减少泵浦光束和信号光束的衰减。

6. 发明申请

US20080074736A1 Semiconductor Raman ring amplifier 失效
标题翻译：半导体拉曼环放大器
公开(公告)号：US20080074736A1
公开(公告)日：2008-03-27
申请号：US11520533
申请日：2006-09-12
申请人： Ying-hao Kuo , Haisheng Rong , Mario J. Paniccia
发明人： Ying-hao Kuo , Haisheng Rong , Mario J. Paniccia
IPC分类号： H01S3/00 , H04B10/12
CPC分类号： H04B10/2916 , H01S3/0078 , H01S3/06754 , H01S3/06758 , H01S3/06791 , H01S3/094015 , H01S3/1003 , H01S3/302
摘要： A semiconductor-based Raman ring amplifier is disclosed. A method according to aspects of the present invention includes directing a pump optical beam having a pump wavelength and an input pump power level from an optical waveguide into a ring resonator. The optical waveguide and ring resonator are comprised in semiconductor material. A signal optical beam having a signal encoded thereon at a signal wavelength is directed from the optical waveguide into the ring resonator. The pump optical beam is resonated within the ring resonator to increase a power level of the pump optical beam to a power level sufficient to amplify the signal optical beam via stimulated Raman scattering (SRS) within the ring resonator. A free carrier concentration in the optical waveguide and the ring resonator is reduced to reduce attenuation of the pump optical beam and the signal beam.
摘要翻译：公开了一种基于半导体的拉曼环形放大器。根据本发明的方面的方法包括将具有泵浦波长的泵浦光束和来自光波导的输入泵功率电平引导到环形谐振器中。光波导和环形谐振器包含在半导体材料中。在信号波长处编码有信号的信号光束从光波导引导到环形谐振器中。泵浦光束在环形谐振器内谐振，以将泵浦光束的功率电平增加到足以通过环形谐振器内经受激拉曼散射（SRS）放大信号光束的功率电平。降低光波导和环形谐振器中的自由载流子浓度，以减少泵浦光束和信号光束的衰减。

7. 发明授权

US07266258B2 Two-photon absorption generated carrier lifetime reduction in semiconductor waveguide for semiconductor based raman laser and amplifier 有权
标题翻译：半导体半导体激光和放大器的半导体波导中双光子吸收产生载流子寿命减少
公开(公告)号：US07266258B2
公开(公告)日：2007-09-04
申请号：US10933652
申请日：2004-09-02
申请人： Ansheng Liu , Mario J. Paniccia , Haisheng Rong
发明人： Ansheng Liu , Mario J. Paniccia , Haisheng Rong
IPC分类号： G02F1/025 , G02F1/295 , G02F1/35 , H01S3/30
CPC分类号： G02B6/122 , G02B2006/12097 , H01S3/063 , H01S3/083 , H01S3/0941 , H01S3/30
摘要： A semiconductor based Raman laser and/or amplifier with reduced two-photon absorption generated carrier lifetimes. An apparatus according to embodiments of the present invention includes optical waveguide disposed in semiconductor material and a diode structure disposed in the optical waveguide. The optical waveguide is to be coupled to a pump laser to receive a first optical beam having a first wavelength and a first power level to result in emission of a second optical beam of a second wavelength in the semiconductor waveguide. The diode structure is to be biased to sweep out free carriers from the optical waveguide generated in response to two photon absorption in the optical waveguide.
摘要翻译：具有降低的双光子吸收的半导体基拉曼激光器和/或放大器产生载流子寿命。根据本发明的实施例的装置包括设置在半导体材料中的光波导和设置在光波导中的二极管结构。光波导将耦合到泵激光器以接收具有第一波长和第一功率电平的第一光束，以导致在半导体波导中发射第二波长的第二光束。二极管结构被偏置以从响应于光波导中的两个光子吸收而产生的光波导扫出自由载流子。

8. 发明授权

US07256929B1 Semiconductor waveguide based high speed all optical wavelength converter 有权
标题翻译：基于半导体波导的高速全光波长转换器
公开(公告)号：US07256929B1
公开(公告)日：2007-08-14
申请号：US11336285
申请日：2006-01-20
申请人： Haisheng Rong , Mario J. Paniccia
发明人： Haisheng Rong , Mario J. Paniccia
IPC分类号： G02F2/02 , G02F1/365
CPC分类号： G02F1/353 , G02F1/025 , G02F1/3536 , G02F2201/063 , G02F2202/105
摘要： A semiconductor-based all optical wavelength converter is disclosed. An apparatus according to aspects of the present invention includes an optical waveguide disposed in semiconductor material. An optical pump source is optically coupled to direct an optical pump beam having a first wavelength into the optical waveguide. The optical waveguide is further optically coupled to receive an input optical beam having a second wavelength. The optical waveguide is optically coupled to generate an output optical beam having a third wavelength in response to the optical pump beam and the input optical beam in the optical waveguide. A diode structure is disposed in the optical waveguide. The diode structure includes at least P and N regions. The diode structure is biased to generate an electric field to remove free carriers from an optical path through the optical waveguide generated in response to two photon absorption in the optical waveguide.
摘要翻译：公开了一种基于半导体的全光波长转换器。根据本发明的方面的装置包括设置在半导体材料中的光波导。光泵浦光源被光耦合以将具有第一波长的光泵浦光引导到光波导中。光波导进一步光耦合以接收具有第二波长的输入光束。光波导被光学耦合以响应于光学波束和光波导中的输入光束而产生具有第三波长的输出光束。二极管结构设置在光波导中。二极管结构至少包括P和N区域。二极管结构被偏置以产生电场，以便通过响应于光波导中的两个光子吸收而产生的光波导从光路中去除自由载流子。

9. 发明授权

US08767792B2 Method for electrically pumped semiconductor evanescent laser 有权
标题翻译：电泵浦半导体ev逝激光的方法
公开(公告)号：US08767792B2
公开(公告)日：2014-07-01
申请号：US13838932
申请日：2013-03-15
申请人： John E. Bowers , Oded Cohen , Alexander W. Fang , Richard Jones , Mario J. Paniccia , Hyundai Park
发明人： John E. Bowers , Oded Cohen , Alexander W. Fang , Richard Jones , Mario J. Paniccia , Hyundai Park
IPC分类号： H01S3/091 , H01S3/094
CPC分类号： H01S5/30 , G02B2006/12121 , H01S5/021 , H01S5/026 , H01S5/0424 , H01S5/0425 , H01S5/1032 , H01S5/125 , H01S5/141 , H01S5/2214 , H01S5/223 , H01S5/34
摘要： Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed.
摘要翻译：一种方法的实施方案包括用设置在硅中的光波导引导光学模式，与光波导和有源半导体材料重叠，该有源半导体材料通过光波导引导而光学耦合到光波导，将活性半导体材料电泵送到注入引导通过有源半导体材料并通过光学模式的电流，并响应于注入的电流产生有源半导体材料中的光。公开和要求保护其他实施例。

10. 发明申请

US20080002929A1 Electrically pumped semiconductor evanescent laser 审中-公开
标题翻译：电泵浦半导体ev逝激光器
公开(公告)号：US20080002929A1
公开(公告)日：2008-01-03
申请号：US11479459
申请日：2006-06-30
申请人： John E. Bowers , Oded Cohen , Alexander W. Fang , Richard Jones , Mario J. Paniccia , Hyundai Park
发明人： John E. Bowers , Oded Cohen , Alexander W. Fang , Richard Jones , Mario J. Paniccia , Hyundai Park
IPC分类号： G02B6/12 , G02B6/26 , H01S3/097
CPC分类号： H01S5/30 , G02B2006/12121 , H01S5/021 , H01S5/026 , H01S5/0424 , H01S5/0425 , H01S5/1032 , H01S5/125 , H01S5/141 , H01S5/2214 , H01S5/223 , H01S5/34
摘要： An apparatus and method electrically pumping a hybrid evanescent laser. For one example, an apparatus includes an optical waveguide disposed in silicon. An active semiconductor material is disposed over the optical waveguide defining an evanescent coupling interface between the optical waveguide and the active semiconductor material such that an optical mode to be guided by the optical waveguide overlaps both the optical waveguide and the active semiconductor material. A current injection path is defined through the active semiconductor material and at least partially overlapping the optical mode such that light is generated in response to electrical pumping of the active semiconductor material in response to current injection along the current injection path at least partially overlapping the optical mode.
摘要翻译：一种电泵浦混合ev逝激光的装置和方法。作为一个示例，设备包括设置在硅中的光波导。有源半导体材料设置在光波导上，限定光波导和有源半导体材料之间的渐逝耦合接口，使得由光波导引导的光学模式与光波导和有源半导体材料重叠。通过有源半导体材料限定电流注入路径，并且至少部分地与光学模式重叠，使得响应于沿着沿着电流注入路径的电流注入而响应于有源半导体材料的电泵浦产生光而至少部分地与光学模式。

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