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1. 发明申请

US20050164502A1 Immersion liquids for immersion lithography 有权
标题翻译：用于浸没式光刻的浸液
公开(公告)号：US20050164502A1
公开(公告)日：2005-07-28
申请号：US10763467
申请日：2004-01-22
申请人： Hai Deng , Yueh Wang , Huey-Chiang Liou , Hok-Kin Choi , Robert Meagley , Ernisse Putna
发明人： Hai Deng , Yueh Wang , Huey-Chiang Liou , Hok-Kin Choi , Robert Meagley , Ernisse Putna
IPC分类号： G03F7/20 , H01L21/302 , H01L21/461
CPC分类号： G03F7/2041 , G03F7/70341
摘要： Compositions for immersion liquid materials and associated immersion lithography systems and techniques. Examples of polymer or oligomer-based immersion liquids are described to exhibit superior material properties for immersion lithography in comparison with water and some other commonly-used immersion liquids. In addition, certain material additives may be added to water and water-based immersion liquids to improve the performance of the immersion liquids in immersion lithography.
摘要翻译：用于浸没液体材料和相关浸没光刻系统和技术的组合物。与水和一些其它常用的浸液相比，基于聚合物或低聚物的浸渍液体的实例被描述为具有优异的浸渍光刻材料性能。此外，某些材料添加剂可以添加到水和水基浸液中以改善浸没式光刻中的浸液的性能。

2. 发明授权

US07391501B2 Immersion liquids with siloxane polymer for immersion lithography 有权
标题翻译：浸渍液与硅氧烷聚合物浸渍光刻
公开(公告)号：US07391501B2
公开(公告)日：2008-06-24
申请号：US10763467
申请日：2004-01-22
申请人： Hai Deng , Yueh Wang , Huey-Chiang Liou , Hok-Kin Choi , Robert M. Meagley , Ernisse Putna
发明人： Hai Deng , Yueh Wang , Huey-Chiang Liou , Hok-Kin Choi , Robert M. Meagley , Ernisse Putna
IPC分类号： G03B27/54
CPC分类号： G03F7/2041 , G03F7/70341
摘要： Compositions for immersion liquid materials and associated immersion lithography systems and techniques. Examples of polymer or oligomer-based immersion liquids are described to exhibit superior material properties for immersion lithography in comparison with water and some other commonly-used immersion liquids. In addition, certain material additives may be added to water and water-based immersion liquids to improve the performance of the immersion liquids in immersion lithography.
摘要翻译：用于浸没液体材料和相关浸没光刻系统和技术的组合物。与水和一些其它常用的浸液相比，基于聚合物或低聚物的浸渍液体的实例被描述为具有优异的浸渍光刻材料性能。此外，某些材料添加剂可以添加到水和水基浸液中以改善浸没式光刻中的浸液的性能。

3. 发明授权

US06864192B1 Langmuir-blodgett chemically amplified photoresist 失效
标题翻译： Langmuir-blodgett化学放大光刻胶
公开(公告)号：US06864192B1
公开(公告)日：2005-03-08
申请号：US10695103
申请日：2003-10-28
申请人： Huey-Chiang Liou , Hai Deng , Wang Yueh , Hok-Kin Choi
发明人： Huey-Chiang Liou , Hai Deng , Wang Yueh , Hok-Kin Choi
IPC分类号： G03F7/004 , G03F7/16 , H01L21/31
CPC分类号： B82Y30/00 , G03F7/0045 , G03F7/165 , H01L21/31 , Y10S438/939
摘要： A Langmuir-Blodgett film may be utilized as a chemically amplified photoresist layer. Langmuir-Blodgett films have highly vertically oriented structures which may be effective in reducing line edge or line width roughness in chemically amplified photoresists.
摘要翻译： Langmuir-Blodgett膜可以用作化学放大光致抗蚀剂层。 Langmuir-Blodgett膜具有高度垂直取向的结构，其可有效减少化学放大光致抗蚀剂中的线边缘或线宽粗糙度。

4. 发明授权

US07867687B2 Methods and compositions for reducing line wide roughness 有权
标题翻译：减少线宽粗糙度的方法和组合物
公开(公告)号：US07867687B2
公开(公告)日：2011-01-11
申请号：US10687288
申请日：2003-10-15
申请人： Wang Yueh , Huey-Chiang Liou , Hai Deng , Hok-Kin Choi
发明人： Wang Yueh , Huey-Chiang Liou , Hai Deng , Hok-Kin Choi
IPC分类号： G03F7/004
CPC分类号： G03F7/022 , G03F7/023 , G03F7/0233
摘要： Embodiments of the invention provide a non-chemically amplified photoresist, which results in reduced line wide roughness (LWR). In accordance with one embodiment the photoresist includes a developer-soluble resin (DSR) and a photoactive compound (PAC). For one embodiment of the invention, the even distribution of the PAC within the DSR results in reduced acid diffusion thus reducing LWR. Prior to exposure to the light source, the PAC inhibits solubility of the DSR in the developer. Upon exposure the PAC converts to acid to promote solubility of the DSR. The even distribution of the PAC within the photoresist results in reduced LWR and a reduction in defects. For one embodiment the photoresist is applied in the EUV technology (e.g., wavelength is 13.4 nm). For such an embodiment the LWR may be reduced to less than 1.5 nm allowing for effective fabrication of devices having feature sizes of approximately 15 nm.
摘要翻译：本发明的实施例提供非化学放大的光致抗蚀剂，其导致线宽粗糙度（LWR）的降低。根据一个实施方案，光致抗蚀剂包括显影剂可溶性树脂（DSR）和光敏化合物（PAC）。对于本发明的一个实施例，PAC在DSR内的均匀分布导致酸扩散减少，从而减少LWR。在暴露于光源之前，PAC抑制DSR在显影剂中的溶解度。曝光后，PAC转化为酸，以促进DSR的溶解度。 PAC在光致抗蚀剂内的均匀分布导致LWR降低和缺陷减少。对于一个实施例，以EUV技术（例如，波长为13.4nm）施加光致抗蚀剂。对于这样的实施例，LWR可以减小到小于1.5nm，允许有效地制造具有大约15nm的特征尺寸的器件。

5. 发明申请

US20050084793A1 Methods and compositions for reducing line wide roughness 有权
标题翻译：减少线宽粗糙度的方法和组合物
公开(公告)号：US20050084793A1
公开(公告)日：2005-04-21
申请号：US10687288
申请日：2003-10-15
申请人： Wang Yueh , Huey-Chiang Liou , Hai Deng , Hok-Kin Choi
发明人： Wang Yueh , Huey-Chiang Liou , Hai Deng , Hok-Kin Choi
IPC分类号： G03F7/00 , G03F7/004 , G03F7/022 , G03F7/023
CPC分类号： G03F7/022 , G03F7/023 , G03F7/0233
摘要： Embodiments of the invention provide a non-chemically amplified photoresist, which results in reduced line wide roughness (LWR). In accordance with one embodiment the photoresist includes a developer-soluble resin (DSR) and a photoactive compound (PAC). For one embodiment of the invention, the even distribution of the PAC within the DSR results in reduced acid diffusion thus reducing LWR. Prior to exposure to the light source, the PAC inhibits solubility of the DSR in the developer. Upon exposure the PAC converts to acid to promote solubility of the DSR. The even distribution of the PAC within the photoresist results in reduced LWR and a reduction in defects. For one embodiment the photoresist is applied in the EUV technology (e.g., wavelength is 13.4 nm). For such an embodiment the LWR may be reduced to less than 1.5 nm allowing for effective fabrication of devices having feature sizes of approximately 15 nm.
摘要翻译：本发明的实施例提供非化学放大的光致抗蚀剂，其导致线宽粗糙度（LWR）的降低。根据一个实施方案，光致抗蚀剂包括显影剂可溶性树脂（DSR）和光敏化合物（PAC）。对于本发明的一个实施例，PAC在DSR内的均匀分布导致酸扩散减少，从而减少LWR。在暴露于光源之前，PAC抑制DSR在显影剂中的溶解度。曝光后，PAC转化为酸，以促进DSR的溶解度。 PAC在光致抗蚀剂内的均匀分布导致LWR降低和缺陷减少。对于一个实施例，以EUV技术（例如，波长为13.4nm）施加光致抗蚀剂。对于这样的实施例，LWR可以减小到小于1.5nm，允许有效地制造具有大约15nm的特征尺寸的器件。

6. 发明申请

US20050107242A1 Zeolite-carbon doped oxide composite low k dielectric 有权
标题翻译：沸石 - 碳掺杂氧化物复合低k电介质
公开(公告)号：US20050107242A1
公开(公告)日：2005-05-19
申请号：US10716250
申请日：2003-11-17
申请人： Hai Deng , Huey-Chiang Liou
发明人： Hai Deng , Huey-Chiang Liou
IPC分类号： H01L21/316 , H01L23/532 , B01J20/28
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02282 , H01L21/02304 , H01L21/02337 , H01L21/31695 , H01L23/5329 , H01L2924/0002 , Y10T428/24331 , H01L2924/00
摘要： A method for forming a zeolite-carbon doped oxide (CDO) composite dielectric material is herein described. Zeolite particles may be dispersed in a solvent. The zeolite solvent solution may then be deposited on an underlying layer, such as a wafer of other dielectric layer. At least some solvent may then be removed to form a zeolite film. A CDO may then be deposited in the zeolite film to form a zeolite-CDO composite film/dielectric. The zeolite-CDO composite film/dielectric may then be calcinated to form a solid phase zeolite-CDO composite dilectric.
摘要翻译：本文描述了形成沸石 - 碳掺杂氧化物（CDO）复合电介质材料的方法。沸石颗粒可以分散在溶剂中。然后可以将沸石溶剂溶液沉积在下层，例如其它介电层的晶片上。然后可以除去至少一些溶剂以形成沸石膜。然后可以将CDO沉积在沸石膜中以形成沸石-CDO复合膜/电介质。然后可以将沸石-CDO复合膜/电介质煅烧以形成固相沸石-CDO复合材料。

7. 发明授权

US07303985B2 Zeolite-carbon doped oxide composite low k dielectric 有权
标题翻译：沸石 - 碳掺杂氧化物复合低k电介质
公开(公告)号：US07303985B2
公开(公告)日：2007-12-04
申请号：US10716250
申请日：2003-11-17
申请人： Hai Deng , Huey-Chiang Liou
发明人： Hai Deng , Huey-Chiang Liou
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02282 , H01L21/02304 , H01L21/02337 , H01L21/31695 , H01L23/5329 , H01L2924/0002 , Y10T428/24331 , H01L2924/00
摘要： A method for forming a zeolite-carbon doped oxide (CDO) composite dielectric material is herein described. Zeolite particles may be dispersed in a solvent. The zeolite solvent solution may then be deposited on an underlying layer, such as a wafer of other dielectric layer. At least some solvent may then be removed to form a zeolite film. A CDO may then be deposited in the zeolite film to form a zeolite-CDO composite film/dielectric. The zeolite-CDO composite film/dielectric may then be calcinated to form a solid phase zeolite-CDO composite dilectric.
摘要翻译：本文描述了形成沸石 - 碳掺杂氧化物（CDO）复合电介质材料的方法。沸石颗粒可以分散在溶剂中。然后可以将沸石溶剂溶液沉积在下层，例如其它介电层的晶片上。然后可以除去至少一些溶剂以形成沸石膜。然后可以将CDO沉积在沸石膜中以形成沸石-CDO复合膜/电介质。然后可以将沸石-CDO复合膜/电介质煅烧以形成固相沸石-CDO复合材料。

8. 发明申请

US20080220213A1 ZEOLITE - CARBON DOPED OXIDE COMPOSITE LOW K DIELECTRIC 审中-公开
标题翻译： ZEOLITE - 碳氧化物复合材料低K电介质
公开(公告)号：US20080220213A1
公开(公告)日：2008-09-11
申请号：US11924865
申请日：2007-10-26
申请人： Hai Deng , Huey-Chiang Liou
发明人： Hai Deng , Huey-Chiang Liou
IPC分类号： B32B3/10
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02282 , H01L21/02304 , H01L21/02337 , H01L21/31695 , H01L23/5329 , H01L2924/0002 , Y10T428/24331 , H01L2924/00
摘要： A method for forming a zeolite-carbon doped oxide (CDO) composite dielectric material is herein described. Zeolite particles may be dispersed in a solvent. The zeolite solvent solution may then be deposited on an underlying layer, such as a wafer or other dielectric layer. At least some solvent may then be removed to form a zeolite film. A CDO may then be deposited in the zeolite film to form a zeolite-CDO composite film/dielectric. The Zeolite-CDO composite film/dielectric may then be calcinated to form a solid phase zeolite-CDO composite dielectric.
摘要翻译：本文描述了形成沸石 - 碳掺杂氧化物（CDO）复合电介质材料的方法。沸石颗粒可以分散在溶剂中。然后可以将沸石溶剂溶液沉积在下面的层上，例如晶片或其它电介质层。然后可以除去至少一些溶剂以形成沸石膜。然后可以将CDO沉积在沸石膜中以形成沸石-CDO复合膜/电介质。然后可以将沸石-CDO复合膜/电介质煅烧以形成固相沸石-CDO复合电介质。

9. 发明授权

US07674390B2 Zeolite—sol gel nano-composite low k dielectric 失效
标题翻译：沸石溶胶凝胶纳米复合材料低k电介质
公开(公告)号：US07674390B2
公开(公告)日：2010-03-09
申请号：US10716254
申请日：2003-11-17
申请人： Hai Deng
发明人： Hai Deng
IPC分类号： H01B13/00
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02304 , H01L21/02337 , H01L21/31695 , H01L21/76807 , H01L21/7682 , H01L21/76828 , H01L21/76829 , H01L2221/1047
摘要： A method for forming a sol gel-zeolite composite dielectric material is herein described. Zeolite particles may be dispersed in a sol creating a liquid sol-zeolite colloid. The liquid sol-zeolite colloid may be deposited on an underlying layer. The liquid sol-zeolite colloid may be formed into a wet gel-zeolite composite. All of the liquid may be extracted from the wet gel-zeolite composite to form an aerogel-zeolite composite. Then the wet gel-zeolite composite or the aerogel-zeolite composite may be calcined to freeze the structure of the composite material.
摘要翻译：这里描述了形成溶胶凝胶 - 沸石复合介电材料的方法。沸石颗粒可以分散在产生液体溶胶 - 沸石胶体的溶胶中。液体溶胶 - 沸石胶体可以沉积在下层上。液体溶胶 - 沸石胶体可以形成湿凝胶 - 沸石复合材料。所有液体可以从湿凝胶 - 沸石复合材料中提取出来以形成气凝胶 - 沸石复合材料。然后可以将湿凝胶 - 沸石复合材料或气凝胶 - 沸石复合材料煅烧以冷冻复合材料的结构。

10. 发明申请

US20050287478A1 Wash composition with polymeric surfactant 有权
标题翻译：用聚合表面活性剂洗涤组合
公开(公告)号：US20050287478A1
公开(公告)日：2005-12-29
申请号：US10881780
申请日：2004-06-29
申请人： Hai Deng
发明人： Hai Deng
IPC分类号： G03C5/00 , G03F7/038 , G03F7/32 , G03F7/38
CPC分类号： G03F7/322 , G03F7/038 , G03F7/32 , G03F7/38
摘要： A wash composition that includes a polymeric surfactant and methods for using the wash composition are described herein.
摘要翻译：本文描述了包含聚合物表面活性剂的洗涤组合物和使用洗涤组合物的方法。

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