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1. 发明申请

US20070047326A1 Programming memory devices 有权
公开(公告)号：US20070047326A1
公开(公告)日：2007-03-01
申请号：US11546171
申请日：2006-10-11
申请人： Dzung Nguyen , Benjamin Louie , Hagop Nazarian , Aaron Yip , Jin-Man Han
发明人： Dzung Nguyen , Benjamin Louie , Hagop Nazarian , Aaron Yip , Jin-Man Han
IPC分类号： G11C16/04
CPC分类号： G11C16/10
摘要： A target memory cell of a memory device is programmed by applying a programming voltage to a word line that includes the target memory cell, determining whether the target memory cell is programmed, and increasing the programming voltage by a step voltage if it is determined that the target memory cell is not programmed. An initial programming voltage and the step voltage are each selectable after fabrication of the memory device.

2. 发明申请

US20060256620A1 Programming memory devices 有权
公开(公告)号：US20060256620A1
公开(公告)日：2006-11-16
申请号：US11126790
申请日：2005-05-11
申请人： Dzung Nguyen , Benjamin Louie , Hagop Nazarian , Aaron Yip , Jin-Man Han
发明人： Dzung Nguyen , Benjamin Louie , Hagop Nazarian , Aaron Yip , Jin-Man Han
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C16/10
摘要： A target memory cell of a memory device is programmed by applying a programming voltage to a word line that includes the target memory cell, determining whether the target memory cell is programmed, and increasing the programming voltage by a step voltage if it is determined that the target memory cell is not programmed. An initial programming voltage and the step voltage are each selectable after fabrication of the memory device.

3. 发明申请

US20050219902A1 Voltage booster 失效
公开(公告)号：US20050219902A1
公开(公告)日：2005-10-06
申请号：US11137941
申请日：2005-05-26
申请人： Hagop Nazarian , Dzung Nguyen
发明人： Hagop Nazarian , Dzung Nguyen
IPC分类号： G05F1/10 , G11C5/14 , G11C11/34 , G11C16/08 , G11C16/30 , H02M3/07
CPC分类号： G11C5/145 , G11C16/08 , G11C16/30 , H02M3/073
摘要： Voltage boosters or pass circuits for generating a boosted voltage are advantageous in the decoding and programming of memory devices and, in particular, NAND flash memory devices. The boosted voltage can be used as a gate voltage for a pass gate providing programming voltages to a selected block of memory cells, such as in a NAND flash memory array. The pass circuits facilitate the elimination of high-voltage p-channel devices by providing a boosted voltage using n-channel devices. The pass circuits further permit control of multiple pass gates using a single boosted voltage source.

4. 发明申请

US20050093613A1 Voltage booster 有权
公开(公告)号：US20050093613A1
公开(公告)日：2005-05-05
申请号：US10701141
申请日：2003-11-04
申请人： Hagop Nazarian , Dzung Nguyen
发明人： Hagop Nazarian , Dzung Nguyen
IPC分类号： G05F1/10 , G11C5/14 , G11C11/34 , G11C16/08 , G11C16/30 , H02M3/07
CPC分类号： G11C5/145 , G11C16/08 , G11C16/30 , H02M3/073
摘要： Voltage boosters or pass circuits for generating a boosted voltage are advantageous in the decoding and programming of memory devices and, in particular, NAND flash memory devices. The boosted voltage can be used as a gate voltage for a pass gate providing programming voltages to a selected block of memory cells, such as in a NAND flash memory array. The pass circuits facilitate the elimination of high-voltage p-channel devices by providing a boosted voltage using n-channel devices. The pass circuits further permit control of multiple pass gates using a single boosted voltage source.

5. 发明授权

US08796658B1 Filamentary based non-volatile resistive memory device and method 有权
标题翻译：基于长丝的非易失性电阻式存储器件及方法
公开(公告)号：US08796658B1
公开(公告)日：2014-08-05
申请号：US13466008
申请日：2012-05-07
申请人： Hagop Nazarian , Sung Hyun Jo
发明人： Hagop Nazarian , Sung Hyun Jo
IPC分类号： H01L47/00 , H01L27/24 , H01L45/00
CPC分类号： H01L45/1641 , H01L27/2463 , H01L27/2481 , H01L45/085 , H01L45/12 , H01L45/1233 , H01L45/1246 , H01L45/148 , H01L45/165 , H01L45/1675
摘要： A resistive memory device includes a first metallic layer comprising a source of positive metallic ions, a switching media having an upper surface and a lower surface, wherein the upper surface is adjacent to the first metallic layer, wherein the switching media comprises conductive filaments comprising positive metallic ions from the source of positive metallic ions formed from the upper surface towards the lower surface, a semiconductor substrate, a second metallic layer disposed above the semiconductor substrate, a non-metallic conductive layer disposed above the second metallic layer, and an interface region between the non-metallic conductive layer and the switching media having a negative ionic charge.
摘要翻译：电阻式存储器件包括包含正金属离子源的第一金属层，具有上表面和下表面的开关介质，其中上表面与第一金属层相邻，其中开关介质包括包含正极的导电细丝从上表面朝向下表面形成的正金属离子源的金属离子，半导体衬底，设置在半导体衬底上方的第二金属层，设置在第二金属层上方的非金属导电层，以及界面区域在非金属导电层和具有负离子电荷的开关介质之间。

6. 发明授权

US08723154B2 Integration of an amorphous silicon resistive switching device 有权
标题翻译：集成非晶硅电阻开关器件
公开(公告)号：US08723154B2
公开(公告)日：2014-05-13
申请号：US12894057
申请日：2010-09-29
申请人： Sung Hyun Jo , Hagop Nazarian
发明人： Sung Hyun Jo , Hagop Nazarian
IPC分类号： H01L29/12 , H01L29/8605 , H01L27/105 , H01L21/8239
CPC分类号： H01L45/1233 , H01L27/2436 , H01L45/085 , H01L45/1266 , H01L45/148 , H01L45/1616 , H01L45/1675 , H01L45/1683
摘要： An integrated circuit device. The integrated circuit device includes a semiconductor substrate having a surface region. A gate dielectric layer overlies the surface region of the substrate. The device includes a MOS device having a p+ active region. The p+ active region forms a first electrode for a resistive switching device. The resistive switching device includes an amorphous silicon switching material overlying the p+ active region and a metal electrode overlies the first metal conductor structure. The metal electrode includes a metal material, upon application of a positive bias to the metal electrode, forms a metal region in the amorphous silicon switching material. The MOS device provides for a select transistor for the integrated circuit device.
摘要翻译：集成电路器件。集成电路器件包括具有表面区域的半导体衬底。栅极电介质层覆盖在衬底的表面区域上。该器件包括具有p +有源区的MOS器件。 p +有源区形成用于电阻式开关器件的第一电极。电阻开关器件包括覆盖p +有源区的非晶硅开关材料和覆盖在第一金属导体结构上的金属电极。金属电极包括金属材料，当对金属电极施加正偏压时，在非晶硅开关材料中形成金属区域。 MOS器件为集成电路器件提供选择晶体管。

7. 发明申请

US20130024742A1 ERROR CORRECTION FOR FLASH MEMORY 有权
标题翻译： FLASH存储器的错误校正
公开(公告)号：US20130024742A1
公开(公告)日：2013-01-24
申请号：US13616379
申请日：2012-09-14
申请人： Hagop Nazarian , Ping Hou
发明人： Hagop Nazarian , Ping Hou
IPC分类号： H03M13/29
CPC分类号： G06F11/1072 , G11C2029/0411
摘要： Providing for single and multi-bit error correction of electronic memory is described herein. As an example, error correction can be accomplished by establishing a suspect region between bit level distributions of a set of analyzed memory cells. The suspect region can define potential error bits for the distributions. If a bit error is detected for the distributions, error correction can first be applied to the potential error bits in the suspect region. By identifying suspected error bits and limiting initial error correction to such identified bits, complexities involved in applying error correction to all bits of the distributions can be mitigated or avoided, improving efficiency of bit error corrections for electronic memory.
摘要翻译：本文描述了提供电子存储器的单位和多位纠错。作为示例，可以通过在一组分析的存储器单元的位级分布之间建立可疑区域来实现纠错。可疑区域可以定义分布的潜在错误位。如果对于分布检测到位错误，则可以首先将错误校正应用于可疑区域中的潜在错误位。通过识别怀疑的错误位并将初始误差修正限制在这种识别的位上，可以减轻或避免对分布的所有位应用纠错所涉及的复杂性，从而提高电子存储器误码校正的效率。

8. 发明申请

US20120327717A1 HIGH READ SPEED MEMORY WITH GATE ISOLATION 有权
标题翻译：高速读存储器与门隔离
公开(公告)号：US20120327717A1
公开(公告)日：2012-12-27
申请号：US13600527
申请日：2012-08-31
申请人： Richard Fastow , Hagop Nazarian , Lei Xue
发明人： Richard Fastow , Hagop Nazarian , Lei Xue
IPC分类号： G11C16/26 , H01L27/088 , G11C16/04
CPC分类号： G11C16/0483 , G11C5/063 , H01L27/0207 , H01L27/11529 , H01L27/11573
摘要： Providing for a serial array memory transistor architecture that achieves high read speeds compared with conventional serial array memory is described herein. By way of example, the serial array memory can be connected to and can drive a gate voltage of a small capacitance pass transistor, to facilitate sensing memory transistors of the serial array. The pass transistor modulates current flow or voltage at an adjacent metal bitline, which can be utilized to sense a program or erase state(s) of the memory transistors. Due to the small capacitance of the pass transistor, read latency for the serial array can be significantly lower than conventional serial array memory (e.g., NAND memory). Further, various mechanisms for forming an amplifier region of the serial array memory comprising discrete pass transistor are described to facilitate efficient fabrication of the serial array memory transistor architecture.
摘要翻译：本文描述了提供与常规串行阵列存储器相比实现高读取速度的串行阵列存储器晶体管架构。作为示例，串行阵列存储器可以连接到并且可以驱动小电容通过晶体管的栅极电压，以便于感测串行阵列的存储器晶体管。传输晶体管调制相邻金属位线处的电流或电压，其可用于感测存储器晶体管的编程或擦除状态。由于传输晶体管的小电容，串行阵列的读延迟可以显着低于常规串行阵列存储器（例如，NAND存储器）。此外，描述了用于形成包括离散传输晶体管的串行阵列存储器的放大器区域的各种机制，以促进串行阵列存储晶体管架构的有效制造。

9. 发明申请

US20120236650A1 NAND ARCHTECTURE INCLUDING RESITIVE MEMORY CELLS 有权
标题翻译： NAND存储器包括可记忆存储器
公开(公告)号：US20120236650A1
公开(公告)日：2012-09-20
申请号：US13051296
申请日：2011-03-18
申请人： Hagop Nazarian
发明人： Hagop Nazarian
IPC分类号： G11C16/04 , G11C11/00
CPC分类号： G11C13/003 , G11C13/0007 , G11C16/0483 , G11C2213/33 , G11C2213/53 , G11C2213/56 , G11C2213/75
摘要： A non-volatile memory device includes a first select transistor, a second select transistor, and a first string of first memory cells provided between the first and second select transistors. Each first memory cell has a first resistive memory cell and a first transistor. The first resistive memory cell is in series with a gate of the first transistor. The non-volatile memory device further includes a first bit line coupled to a drain of the first select transistor and a plurality of word lines. Each word line is coupled to one of the first memory cells.
摘要翻译：非易失性存储器件包括第一选择晶体管，第二选择晶体管和设置在第一和第二选择晶体管之间的第一存储单元串。每个第一存储单元具有第一电阻存储单元和第一晶体管。第一电阻存储单元与第一晶体管的栅极串联。非易失性存储器件还包括耦合到第一选择晶体管的漏极和多个字线的第一位线。每个字线耦合到第一存储器单元之一。

10. 发明申请

US20110317466A1 HIGH READ SPEED MEMORY WITH GATE ISOLATION 有权
标题翻译：高速读存储器与门隔离
公开(公告)号：US20110317466A1
公开(公告)日：2011-12-29
申请号：US12824352
申请日：2010-06-28
申请人： Richard Fastow , Hagop Nazarian , Lei Xue
发明人： Richard Fastow , Hagop Nazarian , Lei Xue
IPC分类号： G11C5/06 , H01L21/82
CPC分类号： G11C16/0483 , G11C5/063 , H01L27/0207 , H01L27/11529 , H01L27/11573
摘要： Providing for a serial array memory transistor architecture that achieves high read speeds compared with conventional serial array memory is described herein. By way of example, the serial array memory can be connected to and can drive a gate voltage of a small capacitance pass transistor, to facilitate sensing memory transistors of the serial array. The pass transistor modulates current flow or voltage at an adjacent metal bitline, which can be utilized to sense a program or erase state(s) of the memory transistors. Due to the small capacitance of the pass transistor, read latency for the serial array can be significantly lower than conventional serial array memory (e.g., NAND memory). Further, various mechanisms for forming an amplifier region of the serial array memory comprising discrete pass transistor are described to facilitate efficient fabrication of the serial array memory transistor architecture.
摘要翻译：本文描述了提供与常规串行阵列存储器相比实现高读取速度的串行阵列存储器晶体管架构。作为示例，串行阵列存储器可以连接到并且可以驱动小电容通过晶体管的栅极电压，以便于感测串行阵列的存储器晶体管。传输晶体管调制相邻金属位线处的电流或电压，其可用于感测存储器晶体管的编程或擦除状态。由于传输晶体管的小电容，串行阵列的读延迟可以显着低于常规串行阵列存储器（例如，NAND存储器）。此外，描述了用于形成包括离散传输晶体管的串行阵列存储器的放大器区域的各种机制，以促进串行阵列存储晶体管架构的有效制造。

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