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1. 发明授权

US08451580B2 Multilayer ceramic capacitor capable of controlling equivalent series resistance 有权
标题翻译：能够控制等效串联电阻的多层陶瓷电容器
公开(公告)号：US08451580B2
公开(公告)日：2013-05-28
申请号：US13286871
申请日：2011-11-01
申请人： Hae Suk Chung , Byoung Hwa Lee , Eun Hyuk Chae , Eun Hye Choi , Kang Heon Hur , Dae Bok Oh
发明人： Hae Suk Chung , Byoung Hwa Lee , Eun Hyuk Chae , Eun Hye Choi , Kang Heon Hur , Dae Bok Oh
IPC分类号： H01G4/005 , H01G4/06
CPC分类号： H01G4/232 , H01G4/012 , H01G4/12 , H01G4/30
摘要： There is provided a multilayer ceramic capacitor capable of controlling equivalent series resistance (ESR) characteristics. The multilayer ceramic capacitor includes: a ceramic laminate including dielectric layers and a plurality of internal electrodes having different polarities and alternately stacked between the dielectric layers; and external electrodes formed on both sides of the ceramic laminate, wherein each of the internal electrodes includes a main electrode and a lead for connecting the main electrode to the external electrode, and an equivalent series resistance (ESR) value is determined by adjusting a ratio of a width to a length of the lead, whereby the ESR characteristics of the multilayer ceramic capacitor may be controlled.
摘要翻译：提供了能够控制等效串联电阻（ESR）特性的多层陶瓷电容器。所述多层陶瓷电容器包括：陶瓷层叠体，其包含电介质层和具有不同极性的多个内部电极，并交替堆叠在所述电介质层之间; 以及形成在陶瓷层叠体两侧的外部电极，其中每个内部电极包括主电极和用于将主电极连接到外部电极的引线，并且通过调节比例来确定等效串联电阻（ESR）值宽度到引线的长度，由此可以控制多层陶瓷电容器的ESR特性。

2. 发明申请

US20120268860A1 MULTILAYER CERAMIC CAPACITOR CAPABLE OF CONTROLLING EQUIVALENT SERIES RESISTANCE 有权
标题翻译：可控制等效串联电阻的多层陶瓷电容器
公开(公告)号：US20120268860A1
公开(公告)日：2012-10-25
申请号：US13286871
申请日：2011-11-01
申请人： Hae Suk CHUNG , Byoung Hwa Lee , Eun Hyuk Chae , Eun Hye Choi , Kang Heon Hur , Dae Bok Oh
发明人： Hae Suk CHUNG , Byoung Hwa Lee , Eun Hyuk Chae , Eun Hye Choi , Kang Heon Hur , Dae Bok Oh
IPC分类号： H01G4/30
CPC分类号： H01G4/232 , H01G4/012 , H01G4/12 , H01G4/30
摘要： There is provided a multilayer ceramic capacitor capable of controlling equivalent series resistance (ESR) characteristics. The multilayer ceramic capacitor includes: a ceramic laminate including dielectric layers and a plurality of internal electrodes having different polarities and alternately stacked between the dielectric layers; and external electrodes formed on both sides of the ceramic laminate, wherein each of the internal electrodes includes a main electrode and a lead for connecting the main electrode to the external electrode, and an equivalent series resistance (ESR) value is determined by adjusting a ratio of a width to a length of the lead, whereby the ESR characteristics of the multilayer ceramic capacitor may be controlled.
摘要翻译：提供了能够控制等效串联电阻（ESR）特性的多层陶瓷电容器。所述多层陶瓷电容器包括：陶瓷层叠体，其包含电介质层和具有不同极性的多个内部电极，并交替堆叠在所述电介质层之间; 以及形成在陶瓷层叠体两侧的外部电极，其中每个内部电极包括主电极和用于将主电极连接到外部电极的引线，并且通过调节比例来确定等效串联电阻（ESR）值宽度到引线的长度，由此可以控制多层陶瓷电容器的ESR特性。

3. 发明授权

US08614876B2 Multilayer ceramic capacitor 有权
标题翻译：多层陶瓷电容器
公开(公告)号：US08614876B2
公开(公告)日：2013-12-24
申请号：US13282138
申请日：2011-10-26
申请人： Hae Suk Chung , Dae Bok Oh , Eun Hye Choi , Eun Hyuk Chae , Kang Heon Hur
发明人： Hae Suk Chung , Dae Bok Oh , Eun Hye Choi , Eun Hyuk Chae , Kang Heon Hur
IPC分类号： H01G4/06
CPC分类号： H01G4/232 , H01G4/12 , H01G4/30 , H05K3/328 , H05K2201/10015
摘要： There is provided a multilayer ceramic capacitor including: a ceramic body including dielectric layers and internal electrodes stacked between the dielectric layers; and a pair of external electrodes each fixed to first and second surfaces of the ceramic body, facing each other, and connected to the internal electrodes, wherein the ceramic body has a third surface facing a printed circuit board and each of the pair of external electrodes includes mounting parts extended onto the third surface and having a preset length by which they are mounted on the printed circuit board and wherein connection parts between the pair of external electrodes and the mounting parts have a convexly curved shape having a size equal to or smaller than a preset corner radius.
摘要翻译：提供了一种多层陶瓷电容器，其包括：陶瓷体，其包括层叠在所述电介质层之间的电介质层和内部电极; 以及一对外部电极，每个外部电极固定到陶瓷体的第一和第二表面，彼此面对并连接到内部电极，其中陶瓷体具有面向印刷电路板的第三表面和一对外部电极中的每一个包括延伸到第三表面上并且具有预定长度的安装部件，通过它们安装在印刷电路板上，并且其中一对外部电极和安装部件之间的连接部分具有等于或小于预设的角半径。

4. 发明申请

US20120268859A1 MULTILAYER CERAMIC CAPACITOR 有权
标题翻译：多层陶瓷电容器
公开(公告)号：US20120268859A1
公开(公告)日：2012-10-25
申请号：US13282138
申请日：2011-10-26
申请人： Hae Suk Chung , Dae Bok Oh , Eun Hye Choi , Eun Hyuk Chae , Kang Heon Hur
发明人： Hae Suk Chung , Dae Bok Oh , Eun Hye Choi , Eun Hyuk Chae , Kang Heon Hur
IPC分类号： H01G4/30
CPC分类号： H01G4/232 , H01G4/12 , H01G4/30 , H05K3/328 , H05K2201/10015
摘要： There is provided a multilayer ceramic capacitor including: a ceramic body including dielectric layers and internal electrodes stacked between the dielectric layers; and a pair of external electrodes each fixed to first and second surfaces of the ceramic body, facing each other, and connected to the internal electrodes, wherein the ceramic body has a third surface facing a printed circuit board and each of the pair of external electrodes includes mounting parts extended onto the third surface and having a preset length by which they are mounted on the printed circuit board and wherein connection parts between the pair of external electrodes and the mounting parts have a convexly curved shape having a size equal to or smaller than a preset corner radius.
摘要翻译：提供了一种多层陶瓷电容器，其包括：陶瓷体，其包括层叠在所述电介质层之间的电介质层和内部电极; 以及一对外部电极，每个外部电极固定到陶瓷体的第一和第二表面，彼此面对并连接到内部电极，其中陶瓷体具有面向印刷电路板的第三表面和一对外部电极中的每一个包括延伸到第三表面上并且具有预定长度的安装部件，通过它们安装在印刷电路板上，并且其中一对外部电极和安装部件之间的连接部分具有等于或小于预设的角半径。

5. 发明申请

US20160218181A1 Semiconductor Substrate and Semiconductor Device Including the Same 有权
标题翻译：半导体基板和包括其的半导体器件
公开(公告)号：US20160218181A1
公开(公告)日：2016-07-28
申请号：US14968049
申请日：2015-12-14
申请人： Moon Seung Yang , Eun Hye Choi , Sun Jung Kim , Seung Hun Lee , Hyun-Jung Lee
发明人： Moon Seung Yang , Eun Hye Choi , Sun Jung Kim , Seung Hun Lee , Hyun-Jung Lee
IPC分类号： H01L29/10 , H01L29/417 , H01L29/161 , H01L29/78
CPC分类号： H01L29/1054 , H01L21/02381 , H01L21/0245 , H01L21/02488 , H01L21/02505 , H01L21/0251 , H01L21/02532 , H01L29/161 , H01L29/78 , H01L29/7848 , H01L29/785
摘要： A semiconductor substrate and a semiconductor device are provided. The semiconductor substrate includes a base substrate, a first silicon germanium layer on the base substrate and a second silicon germanium layer on the first silicon germanium layer. A germanium fraction of the second silicon germanium layer decreases in the direction away from the base substrate, and a germanium fraction of a lowermost part of the second silicon germanium layer is greater than a germanium fraction of an uppermost part of the first silicon germanium layer.
摘要翻译：提供半导体衬底和半导体器件。半导体衬底包括基底衬底，在基底衬底上的第一硅锗层和第一硅锗层上的第二硅锗层。第二硅锗层的锗部分在远离基底的方向上减小，并且第二硅锗层的最下部分的锗部分大于第一硅锗层的最上部的锗部分。

6. 发明授权

US09818824B2 Semiconductor substrate and semiconductor device including the same 有权
公开(公告)号：US09818824B2
公开(公告)日：2017-11-14
申请号：US14968049
申请日：2015-12-14
申请人： Moon Seung Yang , Eun Hye Choi , Sun Jung Kim , Seung Hun Lee , Hyun-Jung Lee
发明人： Moon Seung Yang , Eun Hye Choi , Sun Jung Kim , Seung Hun Lee , Hyun-Jung Lee
IPC分类号： H01L29/161 , H01L29/10 , H01L29/78 , H01L21/02
CPC分类号： H01L29/1054 , H01L21/02381 , H01L21/0245 , H01L21/02488 , H01L21/02505 , H01L21/0251 , H01L21/02532 , H01L29/161 , H01L29/78 , H01L29/7848 , H01L29/785
摘要： A semiconductor substrate and a semiconductor device are provided. The semiconductor substrate includes a base substrate, a first silicon germanium layer on the base substrate and a second silicon germanium layer on the first silicon germanium layer. A germanium fraction of the second silicon germanium layer decreases in the direction away from the base substrate, and a germanium fraction of a lowermost part of the second silicon germanium layer is greater than a germanium fraction of an uppermost part of the first silicon germanium layer.

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