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1. 发明申请

US20150103597A1 NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF NONVOLATILE MEMORY SYSTEM 有权
标题翻译：非易失性存储器件，非易失性存储器系统，包括非易失性存储器件以及非易失性存储器系统的操作方法
公开(公告)号：US20150103597A1
公开(公告)日：2015-04-16
申请号：US14467920
申请日：2014-08-25
申请人： HYUN-WOOK PARK , KITAE PARK , JAEYONG JEONG
发明人： HYUN-WOOK PARK , KITAE PARK , JAEYONG JEONG
IPC分类号： G11C16/16 , G11C16/04
CPC分类号： G11C16/14 , G11C11/56 , G11C16/0483 , G11C16/08 , G11C16/26 , G11C16/3418 , G11C16/3445
摘要： An method of operating a memory system including a plurality of memory cells includes changing an operation mode at least some of the memory cells which operate based on a first operation mode to operate based on a second operation mode; and performing a change erase operation on the memory cells for which an operation mode is changed on the basis of a change erase condition when the operation mode is changed. When memory cells operate in the first operation mode, a normal erase operation is performed based on a first erase condition, and when memory cells operate in the second operation mode, a normal erase operation is performed based on a second erase condition. The change erase condition is different from at least one of the first and second erase conditions.
摘要翻译：一种操作包括多个存储器单元的存储器系统的方法包括：根据第二操作模式，改变基于第一操作模式操作的至少一些存储器单元的操作模式; 并且当操作模式改变时，基于改变擦除条件，对在其中改变操作模式的存储单元执行改变擦除操作。当存储单元在第一操作模式下工作时，基于第一擦除条件执行正常擦除操作，并且当存储器单元在第二操作模式下操作时，基于第二擦除条件执行正常擦除操作。改变擦除条件不同于第一和第二擦除条件中的至少一个。

2. 发明申请

US20160284415A1 NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF NONVOLATILE MEMORY SYSTEM 审中-公开
公开(公告)号：US20160284415A1
公开(公告)日：2016-09-29
申请号：US15172301
申请日：2016-06-03
申请人： HYUN-WOOK PARK , KITAE PARK , JAEYONG JEONG
发明人： HYUN-WOOK PARK , KITAE PARK , JAEYONG JEONG
IPC分类号： G11C16/14 , G11C11/56 , G11C16/26 , G11C16/34 , G11C16/08
CPC分类号： G11C16/14 , G11C11/56 , G11C16/0483 , G11C16/08 , G11C16/26 , G11C16/3418 , G11C16/3445
摘要： An method of operating a memory system including a plurality of memory cells includes changing an operation mode at least some of the memory cells which operate based on a first operation mode to operate based on a second operation mode; and performing a change erase operation on the memory cells for which an operation mode is changed on the basis of a change erase condition when the operation mode is changed. When memory cells operate in the first operation mode, a normal erase operation is performed based on a first erase condition, and when memory cells operate in the second operation mode, a normal erase operation is performed based on a second erase condition. The change erase condition is different from at least one of the first and second erase conditions.

3. 发明申请

US20120327711A1 NONVOLATILE MEMORY DEVICE, MEMORY SYSTEM COMPRISING SAME, AND METHOD OF OPERATING SAME 有权
标题翻译：非易失性存储器件，包含其的存储器系统及其操作方法
公开(公告)号：US20120327711A1
公开(公告)日：2012-12-27
申请号：US13527641
申请日：2012-06-20
申请人： DONGKYO SHIM , JAEYONG JEONG , JU SEOK LEE , OHSUK KWON , KITAE PARK , HYUNJUN YOON
发明人： DONGKYO SHIM , JAEYONG JEONG , JU SEOK LEE , OHSUK KWON , KITAE PARK , HYUNJUN YOON
IPC分类号： G11C16/26
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/0483
摘要： A method of operating a nonvolatile memory device comprises receiving a read command from a memory controller, determining a read mode of the nonvolatile memory device, selecting a read voltage based on the read mode, and performing a read operation on memory cells of a selected page of the nonvolatile memory device using the selected read voltage.
摘要翻译：一种操作非易失性存储器件的方法包括从存储器控制器接收读取命令，确定非易失性存储器件的读取模式，基于读取模式选择读取电压，以及对所选择的页面的存储器单元执行读取操作使用所选择的读取电压的非易失性存储器件。

4. 发明申请

US20130138870A1 MEMORY SYSTEM, DATA STORAGE DEVICE, MEMORY CARD, AND SSD INCLUDING WEAR LEVEL CONTROL LOGIC 审中-公开
标题翻译：存储系统，数据存储设备，存储卡和固态硬盘，包括磨损级控制逻辑
公开(公告)号：US20130138870A1
公开(公告)日：2013-05-30
申请号：US13604780
申请日：2012-09-06
申请人： SANGYONG YOON , CHULHO LEE , KYEHYUN KYUNG , JAEYONG JEONG
发明人： SANGYONG YOON , CHULHO LEE , KYEHYUN KYUNG , JAEYONG JEONG
IPC分类号： G06F12/02
CPC分类号： G11C16/06 , G06F11/1072 , G06F12/0246 , G06F2212/7211 , G11C11/5621 , G11C16/349 , G11C16/3495 , G11C2029/0411
摘要： Disclosed is a memory system which includes a nonvolatile memory having a user area and a buffer area; and wear level control logic managing a mode change operation in which memory blocks of the user area are partially changed into the buffer area, based on wear level information of the nonvolatile memory.
摘要翻译：公开了一种包括具有用户区域和缓冲区域的非易失性存储器的存储器系统; 以及磨损水平控制逻辑，其基于所述非易失性存储器的磨损水平信息，管理其中所述用户区域的存储块被部分地改变为所述缓冲区域的模式改变操作。

5. 发明申请

US20120331210A1 NON-VOLATILE MEMORY DEVICE AND RELATED METHOD OF OPERATION 有权
标题翻译：非易失性存储器件及其相关操作方法
公开(公告)号：US20120331210A1
公开(公告)日：2012-12-27
申请号：US13526794
申请日：2012-06-19
申请人： JAEYONG JEONG , JU SEOK LEE
发明人： JAEYONG JEONG , JU SEOK LEE
IPC分类号： G06F12/02
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/24 , G11C16/3454
摘要： A nonvolatile memory device comprises a cell array connected to a plurality of bit lines in an all bit line structure, a page buffer circuit connected to the plurality of bit lines, and control logic configured to control the page buffer circuit. The control logic controls the page buffer circuit to sense memory cells corresponding to both even-numbered and odd-numbered columns of a selected page in a first read mode and to sense memory cells corresponding to one of the even-numbered and odd-numbered columns of the selected page in a second read mode. A sensing operation is performed at least twice in the first read mode and once in the second read mode.
摘要翻译：非易失性存储器件包括连接到全位线结构中的多个位线的单元阵列，连接到多个位线的寻址缓冲器电路以及被配置为控制页缓冲器电路的控制逻辑。控制逻辑控制页面缓冲电路以在第一读取模式中感测与选定页面的偶数和偶数列对应的存储器单元，并且读取对应于偶数和奇数列之一的存储器单元的第二读取模式。在第一读取模式下执行感测操作至少两次，并且在第二读取模式中执行一次感测操作。

6. 发明申请

US20130021852A1 NONVOLATILE MEMORY AND METHOD OF CONTROLLING THEREOF 有权
标题翻译：非易失存储器及其控制方法
公开(公告)号：US20130021852A1
公开(公告)日：2013-01-24
申请号：US13552668
申请日：2012-07-19
申请人： JAEYONG JEONG
发明人： JAEYONG JEONG
IPC分类号： G11C7/10
CPC分类号： G11C16/28 , G11C16/0483 , G11C16/20
摘要： A memory system includes a nonvolatile memory and a controller. The nonvolatile memory includes a memory cell array storing setup data and reference data, and first and second latch units respectively configured to store the setup data and the reference data sensed from the memory cell array upon a power-up of the memory system. The controller is configured to control a sensing operation of the nonvolatile memory. An operating environment of the nonvolatile memory is determined by the setup data stored in the first latch unit, and the controller controls the nonvolatile memory to re-store the setup data of the memory cell array in the first latch unit when the reference data of the second latch unit is changed.
摘要翻译：存储器系统包括非易失性存储器和控制器。非易失性存储器包括存储设置数据和参考数据的存储单元阵列，以及第一和第二锁存单元，分别被配置为在存储器系统的加电时存储从存储单元阵列感测的建立数据和参考数据。控制器被配置为控制非易失性存储器的感测操作。非易失性存储器的操作环境由存储在第一锁存单元中的设置数据确定，并且当第一锁存单元的参考数据为“0”时，控制器控制该非易失性存储器以将存储单元阵列的建立数据重新存储在第一锁存单元中第二锁存单元被改变。

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