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1. 发明授权

US10345518B1 Multi-wavelength band optical phase and amplitude controller 有权
公开(公告)号：US10345518B1
公开(公告)日：2019-07-09
申请号：US15610396
申请日：2017-05-31
申请人： HRL LABORATORIES LLC , HRL LABORATORIES LLC
发明人： Daniel Yap , Troy Rockwood , Kevin Geary , Sarabjit Mehta
IPC分类号： G02F1/035 , G02B6/10 , G01S7/495 , G02F1/025 , G02F1/295 , H01L33/64 , G01S13/44 , H01L21/768 , H01L23/48 , H01L23/498 , H01L23/522 , H01L33/62 , G01S7/481 , G02F1/01 , G02B3/00 , G02F1/015
摘要： A photonic waveguide for conducting light having first and second wavelengths, the waveguide comprising superposed first and second strips of light conducting semiconductor materials having first and second refractive indexes, wherein the second wavelength is shorter than the first wavelength and the second refractive index is higher than the first refractive index, wherein the width and height of the first strip of light conducting semiconductor material are such that the first strip of light conducting semiconductor material is adapted to confine an optical mode of the first wavelength and the width and height of the second strip of light conducting semiconductor material are such that the second strip of light conducting semiconductor material is adapted to confine an optical mode of the second wavelength but is too narrow to confine an optical mode of the first wavelength.

2. 发明授权

US11251209B1 Reduced volume dual-band MWIR detector 有权
公开(公告)号：US11251209B1
公开(公告)日：2022-02-15
申请号：US14213809
申请日：2014-03-14
申请人： HRL LABORATORIES LLC
发明人： Daniel Yap , Rajesh D. Rajavel , Sarabjit Mehta , Terence J. De Lyon , Hasan Sharifi , Pierre-Yves Delaunay
IPC分类号： H01L27/144 , H01L31/0352 , H01L31/18 , H01L31/101 , H01L31/0236
摘要： An infrared photo-detector array and a method for manufacturing it are disclosed. The infrared photo-detector array contains a plurality of pyramid-shaped structures, a first light-absorbing material supporting the plurality of the pyramid-shaped structure, a carrier-selective electronic barrier supporting the first light-absorbing material, a second light-absorbing material supporting the carrier-selective electronic barrier, and a metal reflector supporting the second light-absorbing material, wherein the plurality of the pyramid shaped structures are disposed on the side of the photo-detector array facing the incident light to be detected and the metal reflector is disposed on the opposite side of the photo-detector array. The method disclosed teaches how to manufacture the infrared photo-detector array.

3. 发明授权

US09726818B1 Multi-wavelength band optical phase and amplitude controller 有权
公开(公告)号：US09726818B1
公开(公告)日：2017-08-08
申请号：US14290979
申请日：2014-05-29
申请人： HRL LABORATORIES LLC
发明人： Daniel Yap , Troy Rockwood , Kevin Geary , Sarabjit Mehta
IPC分类号： G02F1/035 , G02B6/10 , G02F1/01 , G02F1/025
CPC分类号： G02B6/10 , G01S7/4815 , G01S7/4817 , G01S7/495 , G01S13/4463 , G02B3/0056 , G02F1/0147 , G02F1/025 , G02F1/2955 , G02F2001/0151 , H01L21/76879 , H01L23/481 , H01L23/49827 , H01L23/5226 , H01L33/62 , H01L33/64
摘要： A photonic waveguide for conducting light having first and second wavelengths, the waveguide comprising superposed first and second strips of light conducting semiconductor materials having first and second refractive indexes, wherein the second wavelength is shorter than the first wavelength and the second refractive index is higher than the first refractive index, wherein the width and height of the first strip of light conducting semiconductor material are such that the first strip of light conducting semiconductor material is adapted to confine an optical mode of the first wavelength and the width and height of the second strip of light conducting semiconductor material are such that the second strip of light conducting semiconductor material is adapted to confine an optical mode of the second wavelength but is too narrow to confine an optical mode of the first wavelength.

4. 发明授权

US09660314B1 High efficiency plasma tunable antenna and plasma tuned delay line phaser shifter 有权
公开(公告)号：US09660314B1
公开(公告)日：2017-05-23
申请号：US13949921
申请日：2013-07-24
申请人： HRL Laboratories, LLC
发明人： Sarabjit Mehta
IPC分类号： H01Q1/38 , H01P1/18 , H01Q9/04
CPC分类号： H01Q9/0442
摘要： A tunable antenna includes a patch antenna including a substrate, a metallic patch mounted on a first side of the substrate, a signal line connected through the substrate to the metallic patch, and a ground plane on a second side of the substrate opposite the first side. The tunable antenna includes an ionizable gas adjacent to the patch antenna.

5. 发明授权

US09520525B1 Method of making an optical detector 有权
标题翻译：制造光学检测器的方法
公开(公告)号：US09520525B1
公开(公告)日：2016-12-13
申请号：US14594050
申请日：2015-01-09
申请人： HRL Laboratories, LLC
发明人： Daniel Yap , Rajesh D. Rajavel , Sarabjit Mehta , Hasan Sharifi
IPC分类号： H01L21/00 , H01L31/18 , H01L27/146
CPC分类号： H01L31/1844 , H01L27/14685 , H01L31/02363 , H01L31/035281 , H01L31/1892 , Y02E10/50
摘要： An infrared photo-detector with multiple discrete regions of a first absorber material. These regions may have geometric shapes with sloped sidewalls. The detector also may include a second absorber region comprising a second absorber material that absorbs light of a shorter wavelength than the light absorbed by the multiple discrete absorber regions of the first absorber material. The geometric shapes may extend only through the first absorber material. Alternatively, the geometric shapes may extend partially into the second absorber region. The detector has a metal reflector coupled to the multiple discrete absorber regions. The detector also has a substrate containing the discrete absorber regions and the second absorber region. The substrate can further include geometric shaped features etched into the substrate, with those features formed on the side of the substrate opposite the side containing the discrete absorber regions and the second absorber region.
摘要翻译：具有第一吸收材料的多个离散区域的红外光电检测器。这些区域可以具有倾斜侧壁的几何形状。检测器还可以包括第二吸收体区域，该第二吸收体区域吸收比由第一吸收体材料的多个分立吸收体区域吸收的光更短波长的光的第二吸收体材料。几何形状可仅延伸穿过第一吸收材料。或者，几何形状可以部分地延伸到第二吸收体区域中。检测器具有耦合到多个分立吸收体区域的金属反射器。检测器还具有包含离散吸收区域和第二吸收区域的基板。衬底还可以包括蚀刻到衬底中的几何形状特征，其中这些特征形成在衬底的与包含离散吸收体区域和第二吸收体区域的侧面相反的一侧。

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