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1. 发明申请

US20230097280A1 MASK BLANK, TRANSFER MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20230097280A1
公开(公告)日：2023-03-30
申请号：US17801377
申请日：2021-03-08
申请人： HOYA CORPORATION , HOYA ELECTRONICS SINGAPORE PTE. LTD.
发明人： Osamu NOZAWA , Keishi AKIYAMA , Hok Tak Lim , Tham Hui Jun
IPC分类号： G03F1/32 , G03F1/24 , G03F1/60 , G03F1/80
摘要： An object is to provide a mask blank
A mask blank having a substrate and a thin film, the substrate includes two main surfaces and a side surface with a chamfered surface provided between the two main surfaces and the side surface, one main surface of the two main surfaces includes an inner region including a center of the main surface and an outer peripheral region outside of the inner region, the thin film is provided on the inner region of the main surface, the surface reflectance Rs of the outer peripheral region with respect to light of 400 nm to 700 nm wavelength is 10% or less, and provided that Rf is the surface reflectance with respect to light of 400 nm to 700 nm wavelength in one section among sections of the thin film in the range of 9 nm to 10 nm film thickness, the contrast ratio (Rf/Rs) is 3.0 or more.

2. 发明申请

US20220390826A1 REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20220390826A1
公开(公告)日：2022-12-08
申请号：US17772641
申请日：2020-10-19
申请人： HOYA CORPORATION
发明人： Yohei IKEBE , Osamu NOZAWA
IPC分类号： G03F1/24 , G03F1/48 , G03F1/26
摘要： Provided is a reflective mask blank comprising a phase shift film having a small change in the phase difference and/or reflectance of the phase shift film even in a case where the film thickness of the phase shift film changes.
A reflective mask blank comprises a multilayer reflective film and a phase shift film in this order on a main surface of a substrate. The phase shift film comprises a lower layer and an uppermost layer. The lower layer is located between the uppermost layer and the multilayer reflective film. The lower layer is formed of a material in which the total content of ruthenium and chromium is 90 atomic % or more, or a material in which the total content of ruthenium, chromium, and nitrogen is 90 atomic % or more. The uppermost layer is formed of a material in which the total content of ruthenium, chromium, and oxygen is 90 atomic % or more.

3. 发明申请

US20220214608A1 MASK BLANK, METHOD FOR MANUFACTURING TRANSFER MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20220214608A1
公开(公告)日：2022-07-07
申请号：US17438194
申请日：2020-02-20
申请人： HOYA CORPORATION
发明人： Hiroaki SHISHIDO , Ryo OHKUBO , Osamu NOZAWA
IPC分类号： G03F1/32
摘要： A mask blank 100 has a structure in which a pattern-forming thin film 3 and a hard mask film 4 are formed on a transparent substrate 1 in this order. An Si2p narrow spectrum obtained by analyzing the hard mask film by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of at least 103 eV. An N1s narrow spectrum obtained by analyzing the hard mask film by X-ray photoelectron spectroscopy has a maximum peak below a detection lower limit value. In the hard mask film 4, a content ratio (atomic %) of silicon and oxygen is Si:O=1:less than 2.

4. 发明申请

US20180299767A1 MASK BLANK, METHOD FOR MANUFACTURING PHASE SHIFT MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20180299767A1
公开(公告)日：2018-10-18
申请号：US15769116
申请日：2016-10-26
申请人： HOYA CORPORATION
发明人： Osamu NOZAWA , Ryo OHKUBO , Hiroaki SHISHIDO
IPC分类号： G03F1/32 , G03F1/54 , G03F1/80 , G03F7/20 , H01L21/033
摘要： The mask blank (100) in which a phase shift film (2) made of a material containing silicon, a light shielding film (3) made of a material containing chromium, oxygen, and carbon, and a hard mask film (4) made of a material containing one or more elements selected from silicon and tantalum are provided in this order on a transparent substrate (1) is characterized in that the light shielding film (3) is a single layer film having a composition gradient portion with an increased oxygen content at a surface on the hard mask film (4) side and in a region close thereto, the light shielding film (3) has a maximum peak of N1s narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy of lower detection limit or less, and a part of the light shielding film (3) excluding the composition gradient portion has a chromium content of 50 atom % or more and has a maximum peak of Cr2p narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy at binding energy of 574 eV or less.

5. 发明申请

US20170139316A1 MASK BLANK, METHOD FOR MANUFACTURING TRANSFER MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20170139316A1
公开(公告)日：2017-05-18
申请号：US15300376
申请日：2015-03-30
申请人： Hoya Corporation
发明人： Hiroaki SHISHIDO , Osamu NOZAWA
IPC分类号： G03F1/32 , G03F1/80
CPC分类号： G03F1/32 , G03F1/58 , G03F1/80 , H01L21/00 , H01L21/324
摘要： A mask blank, which is capable of being formed with high transfer accuracy when a hard mask film pattern is used as a mask, and even when the mask blank includes a chromium-based light shielding film. A light-semitransmissive film, a light shielding film, and a hard mask film are laminated in the stated order on a transparent substrate. The light-semitransmissive film contains silicon, and the hard mask film contains any one or both of silicon and tantalum. The light shielding film has a laminate structure of a lower layer and an upper layer, and contains chromium. The upper layer has a content of chromium of 65 at % or more, and a content of oxygen of less than 20 at %, and the lower layer has a content of chromium of less than 60 at %, and a content of oxygen of 20 at % or more.

6. 发明申请

US20150338731A1 MASK BLANK, PHASE-SHIFT MASK, AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：掩模空白，相位移屏蔽及其制造方法
公开(公告)号：US20150338731A1
公开(公告)日：2015-11-26
申请号：US14760911
申请日：2014-01-14
申请人： HOYA CORPORATION
发明人： Osamu NOZAWA , Hiroaki SHISHIDO , Kazuya SAKAI
IPC分类号： G03F1/26
CPC分类号： G03F1/32 , G03F1/26 , G03F1/54 , G03F7/2006 , H01L21/0275
摘要： Provided is a mask blank in which uniformity of the composition and optical characteristics of a phase-shift film in the in-plane direction and direction of film thickness is high, uniformity of the composition and optical characteristics of the phase-shift film between a plurality of substrates is also high, and defectivity is low even if a silicon-based material is applied to the material that forms the phase-shift film.A mask blank is provided in which a phase-shift film is provided on a transparent substrate, the phase-shift film having a function to transmit ArF exposure light therethrough at a predetermined transmittance and generate a predetermined amount of phase shift in the ArF exposure light that is transmitted therethrough, wherein the phase-shift film comprises a structure in which a low transmission layer and a high transmission layer are laminated, the low transmission layer and the high transmission layer are formed from a material consisting of silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from semi-metallic elements, non-metallic elements and noble gases, and the low transmission layer has a relatively low nitrogen content in comparison with the high transmission layer.
摘要翻译：提供了一种掩模坯料，其中相移膜在面内方向和膜厚度方面的组成和光学特性的均匀性高，组成的均匀性和相移膜在多个之间的光学特性的基板也很高，即使将硅基材料施加到形成相移膜的材料上，故障率也低。提供了一种掩模板，其中相移膜设置在透明基板上，相移膜具有以预定透射率透射ArF曝光光的功能，并在ArF曝光光中产生预定量的相移其中相移膜包括其中层叠低透射层和高透射层的结构，低透射层和高透射层由由硅和氮组成的材料或材料形成由硅，氮和选自半金属元素，非金属元素和惰性气体中的一种或多种元素组成，低透射层与高透射率层相比具有相对低的氮含量。

7. 发明申请

US20150331311A1 METHOD OF MANUFACTURING MASK BLANK AND METHOD OF MANUFACTURING TRANSFER MASK 有权
标题翻译：制造掩模层的方法和制造转印掩模的方法
公开(公告)号：US20150331311A1
公开(公告)日：2015-11-19
申请号：US14440661
申请日：2013-10-24
申请人： HOYA CORPORATION
发明人： Atsushi KOMINATO , Hiroaki SHISHIDO , Osamu NOZAWA
IPC分类号： G03F1/50
CPC分类号： G03F1/50 , C03C17/225 , C03C17/3435 , C03C2217/281 , C03C2218/33 , C23C14/0641 , G03F1/60
摘要： Methods of manufacturing a mask blank and a transfer mask that reduce internal stress of a thin film. The methods include preparing a transparent substrate having a pair of opposing main surfaces and composed of a glass material having a hydrogen content of less than 7.4×1018 molecules/cm3, forming a thin film composed of a material containing silicon or metal on one of the main surfaces of the transparent substrate, and carrying out heating treatment or photo irradiation treatment on the transparent substrate with the thin film. The absolute value of a variation of flatness in a predetermined region, as calculated based on a difference in shape obtained from a shape of a main surface of the transparent substrate prior to forming the thin film and a shape of a main surface of the substrate exposed after removing the thin film, is not more than 100 nm.
摘要翻译：制造掩模坯料和减少薄膜内部应力的转印掩模的方法。所述方法包括制备具有一对相对主表面并由氢含量小于7.4×1018分/ cm 3的玻璃材料构成的透明基板，在其中的一个上形成由含有硅或金属的材料构成的薄膜透明基板的主表面，并在透明基板上进行加热处理或光照照射处理。基于在形成薄膜之前从透明基板的主表面的形状获得的形状差计算出的预定区域中的平坦度的变化的绝对值和暴露的基板的主表面的形状去除薄膜后，不超过100nm。

8. 发明申请

US20150261083A1 REFLECTIVE MASK BLANK, REFLECTIVE MASK AND METHOD OF MANUFACTURING REFLECTIVE MASK 审中-公开
标题翻译：反光掩模，反射掩模和制造反射掩模的方法
公开(公告)号：US20150261083A1
公开(公告)日：2015-09-17
申请号：US14729164
申请日：2015-06-03
申请人： HOYA CORPORATION
发明人： Kazuya SAKAI , Ryo OHKUBO , Osamu NOZAWA , Toshiyuki SUZUKI
IPC分类号： G03F1/24 , G03F1/80
CPC分类号： G03F1/24 , G03F1/58 , G03F1/80
摘要： The present invention is a reflective mask blank used to fabricate a reflective mask, which has a laminated structure of a multilayer reflective film, an absorber film and an etching mask film in this order on a substrate, wherein the etching mask film comprises a material containing chromium, the absorber film comprises a material containing tantalum, a highly oxidized layer is formed on the surface layer of the absorber film on the opposite side from the substrate, and a Ta 4f narrow spectrum of the highly oxidized layer when analyzed by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of more than 23 eV.
摘要翻译：本发明是用于制造反射掩模的反射掩模坯料，其在基板上依次具有多层反射膜，吸收膜和蚀刻掩模膜的层叠结构，其中蚀刻掩模膜包括含有铬，吸收膜包含含有钽的材料，在与基板相反的一侧的吸收膜的表面层上形成高度氧化层，并且通过X射线分析时形成高度氧化层的Ta 4f窄谱光电子能谱具有超过23eV的结合能的最大峰值。

9. 发明申请

US20130078554A1 REFLECTIVE MASK BLANK, REFLECTIVE MASK AND METHOD OF MANUFACTURING REFLECTIVE MASK 有权
公开(公告)号：US20130078554A1
公开(公告)日：2013-03-28
申请号：US13628790
申请日：2012-09-27
申请人： HOYA CORPORATION
发明人： Kazuya SAKAI , Ryo OHKUBO , Osamu NOZAWA , Toshiyuki SUZUKI
IPC分类号： G03F1/24
CPC分类号： G03F1/24 , G03F1/58 , G03F1/80
摘要： The present invention is a reflective mask blank used to fabricate a reflective mask, which has a laminated structure of a multilayer reflective film, an absorber film and an etching mask film in this order on a substrate, wherein the etching mask film comprises a material containing chromium, the absorber film comprises a material containing tantalum, a highly oxidized layer is formed on the surface layer of the absorber film on the opposite side from the substrate, and a Ta 4f narrow spectrum of the highly oxidized layer when analyzed by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of more than 23 eV.

10. 发明申请

US20220121104A1 MASK BLANK, PHASE SHIFT MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20220121104A1
公开(公告)日：2022-04-21
申请号：US17298248
申请日：2019-12-10
申请人： HOYA CORPORATION
发明人： Hitoshi MAEDA , Osamu NOZAWA
IPC分类号： G03F1/32
摘要： Provided is a mask blank, including a phase shift film.
The phase shift film has a function to transmit an exposure light of an ArF excimer laser at a transmittance of 15% or more and a function to generate a phase difference of 150 degrees or more and 210 degrees or less; the phase shift film is formed of a material containing a non-metallic element and silicon; the phase shift film has a structure where a first layer, a second layer, and a third layer are stacked in this order; refractive indexes n1, n2, n3 of the first, second, and third layers, respectively, at a wavelength of an exposure light satisfy relations of n1>n2 and n2 k2 and k2

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