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1. 发明申请

US20220334863A1 STORAGE SYSTEM, INSTALLATION METHOD, AND RECORDING MEDIUM 有权
公开(公告)号：US20220334863A1
公开(公告)日：2022-10-20
申请号：US17465560
申请日：2021-09-02
申请人： Hitachi, Ltd.
发明人： Hiroshi MIKI , Naoya HATTORI , Tomohiro SHINOHARA
IPC分类号： G06F9/455
摘要： When a cluster is configured by hypervisors of a plurality of servers, a shared storage including internal storages of the plurality of servers can be used. In a storage system in which a hypervisor managing VMs on each of the plurality of servers is included and the plurality of hypervisors configures a cluster, the plurality of servers each include a storage VM that provides the shared storage. One of the plurality of servers includes a manager VM that manages the hypervisors of the plurality of servers as the cluster. A virtual volume of the shared storage is provided as an LU for constructing the manager VM.

2. 发明申请

US20130152083A1 VIRTUAL COMPUTER SYSTEM AND CONTROL METHOD OF MIGRATING VIRTUAL COMPUTER 有权
标题翻译：虚拟计算机系统和虚拟计算机的控制方法
公开(公告)号：US20130152083A1
公开(公告)日：2013-06-13
申请号：US13659107
申请日：2012-10-24
申请人： HITACHI, LTD.
发明人： Hiroshi MIKI , Eiichiro OIWA , Yukari HATTA , Norimitsu HAYAKAWA , Takuji TERAYA
IPC分类号： G06F9/455
CPC分类号： G06F9/5088 , G06F9/4856 , G06F9/5077 , G06F2009/4557
摘要： A live migration in a virtual computer system. On a source physical computer, the control information area of the source logical FC-HBA (managed by an OS) is copied to the control information area of a dummy logical FC-HBA managed by a hypervisor. After an FC login to the dummy FC-HBA, an address conversion table is rewritten so that a host physical address for referring to the control information area of a logical HBA1′ can be referred to using a guest logical address for referring to the control information area of the source FC-HBA. After the FC logout of the source FC-HBA, using a WWN of the FC used for the FC logout, a login to the destination logic FC-HBA is performed. Next, the OS on the source computer is taken over by the destination computer. Therefore, the disk accessed on the source computer can be accessed from the destination FC-HBA.
摘要翻译：虚拟计算机系统中的实时迁移。在源物理计算机上，将源逻辑FC-HBA（由OS管理）的控制信息区域复制到由管理程序管理的虚拟逻辑FC-HBA的控制信息区域。在FC登录到虚拟FC-HBA之后，地址转换表被重写，从而可以使用访客逻辑地址参考控制信息来引用用于参考逻辑HBA1'的控制信息区的主机物理地址源FC-HBA的区域。在FC FC注销FC-HBA之后，使用用于FC注销的FC的WWN，执行到目标逻辑FC-HBA的登录。接下来，源计算机上的操作系统由目标计算机接管。因此，可以从目标FC-HBA访问源计算机上访问的磁盘。

3. 发明申请

US20160149025A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20160149025A1
公开(公告)日：2016-05-26
申请号：US14904685
申请日：2013-07-16
申请人： HITACHI LTD.
发明人： Yuki MORI , Toshiyuki MINE , Hiroshi MIKI , Mieko MATSUMURA , HIrotaka HAMAMURA
IPC分类号： H01L29/78 , H01L29/66 , H01L29/49 , H01L29/16 , H01L29/45
CPC分类号： H01L29/7802 , H01L29/1608 , H01L29/45 , H01L29/4925 , H01L29/4933 , H01L29/66068
摘要： Provided is a technique of securing reliability of a gate insulating film, as much as in a Si power MOSFET, in a semiconductor device in which a semiconductor material having a larger band gap than silicon is used, and which is typified by, for example, an SiC power MOSFET. In order to achieve this object, in the in the SiC power MOSFET, the gate electrode GE is formed in contact with the gate insulating film GOX, and is formed of the polycrystalline silicon film PF1 having the thickness equal to or smaller than 200 nm, and the polycrystalline silicon film PF2 formed in contact with the polycrystalline silicon film PF1, and having any thickness.
摘要翻译：提供了一种在半导体器件中与Si功率MOSFET一样多地确保栅极绝缘膜的可靠性的技术，其中使用具有比硅更大的带隙的半导体材料，并且其典型例如为一个SiC功率MOSFET。为了实现该目的，在SiC功率MOSFET中，栅电极GE形成为与栅极绝缘膜GOX接触，并且由厚度等于或小于200nm的多晶硅膜PF1形成，和形成为与多晶硅膜PF1接触并且具有任何厚度的多晶硅膜PF2。

4. 发明申请

US20140059302A1 COMPUTER SYSTEM 有权
标题翻译：电脑系统
公开(公告)号：US20140059302A1
公开(公告)日：2014-02-27
申请号：US13956411
申请日：2013-08-01
申请人： HITACHI, LTD.
发明人： Norimitsu HAYAKAWA , Eiichiro OIWA , Yukari HATTA , Hiroshi MIKI , Takuji TERAYA
IPC分类号： G06F3/06
CPC分类号： G06F3/0644 , G06F3/0625 , G06F3/0673 , G06F9/45558 , G06F2009/4557
摘要： A hypervisor as a movement source stores key information, and the key information is registered in a storage using the stored key information through a logical HBA which is used for migration.
摘要翻译：作为移动源的虚拟机管理程序存储密钥信息，并且通过用于迁移的逻辑HBA，使用存储的密钥信息将密钥信息登记在存储器中。

5. 发明申请

US20210143255A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20210143255A1
公开(公告)日：2021-05-13
申请号：US17080946
申请日：2020-10-27
申请人： HITACHI, LTD.
发明人： Takeru SUTO , Naoki TEGA , Naoki WATANABE , Hiroshi MIKI
IPC分类号： H01L29/08 , H01L29/78 , H01L29/10 , H01L29/06
摘要： Provided is a semiconductor device whose performance is improved. A p type body region is formed in an n type semiconductor layer containing silicon carbide, and a gate electrode is formed on the body region with a gate insulating film interposed therebetween. An n type source region is formed in the body region on a side surface side of the gate electrode, and the body region and a source region are electrically connected to a source electrode. A p type field relaxation layer FRL is formed in the semiconductor layer on the side surface side of the gate electrode, and the source electrode is electrically connected to the field relaxation layer FRL. The field relaxation layer FRL constitutes a part of the JFET 2Q which is a rectifying element, and a depth of the field relaxation layer FRL is shallower than a depth of the body region.

6. 发明申请

US20190229211A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR, POWER CONVERSION APPARATUS, AUTOMOBILE AND RAILWAY VEHICLE 审中-公开
公开(公告)号：US20190229211A1
公开(公告)日：2019-07-25
申请号：US16216333
申请日：2018-12-11
申请人： HITACHI, LTD.
发明人： Yuan BU , Hiroshi MIKI , Naoki TEGA , Naoki WATANABE , Digh HISAMOTO , Takeru SUTO
IPC分类号： H01L29/78 , H01L29/16 , H01L29/417 , H01L29/36 , H01L29/423 , H01L29/47 , H01L29/04 , H01L29/66 , H01L21/02 , H01L21/04 , H01L29/08 , H01L29/10
摘要： A silicon carbide semiconductor device includes an n-type silicon carbide semiconductor substrate, a drain electrode electrically connected to a rear face, an n-type semiconductor layer having a second impurity concentration lower than the first impurity concentration, a p-type first semiconductor region, an n-type second semiconductor region, an n-type third semiconductor region, a trench having a first side face and a second side face opposing to each other and a third side face intersecting with the first side face and the second side face, a gate electrode formed in the trench with a gate insulating film interposed therebetween, a metal layer electrically connected to the third semiconductor region, and a source electrode electrically connecting the second semiconductor region and the metal layer to each other.

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