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1. 发明申请

US20180286633A1 ION MILLING SYSTEM 审中-公开
公开(公告)号：US20180286633A1
公开(公告)日：2018-10-04
申请号：US15760994
申请日：2015-09-25
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Kengo ASAI , Toru IWAYA , Hisayuki TAKASU , Hiroyasu SHICHI
IPC分类号： H01J37/31 , H01J37/28 , H01J37/20 , H01J37/09 , H01J37/08
CPC分类号： H01J37/31 , H01J37/08 , H01J37/09 , H01J37/20 , H01J37/28 , H01J37/3056 , H01J2237/0262 , H01J2237/0264 , H01J2237/04732 , H01J2237/082 , H01J2237/31745
摘要： To provide an ion milling system that can suppress an orbital shift of an observation electron beam emitted from an electron microscope column, the ion milling system includes: a Penning discharge type ion gun 100 that includes a permanent magnet 114 and that generates ions for processing a sample; and a scanning electron microscope for observing the sample, in which a magnetic shield 172 for reducing a leakage magnetic field from the permanent magnet 114 to the electron microscope column is provided.

2. 发明申请

US20210193430A1 Ion Milling Device and Ion Milling Method 有权
公开(公告)号：US20210193430A1
公开(公告)日：2021-06-24
申请号：US16077782
申请日：2016-02-26
申请人： Hitachi High-Technologies Corporation
发明人： Toru IWAYA , Hisayuki TAKASU , Sakae KOUBORI
IPC分类号： H01J37/20 , H01J37/26 , H01J37/304 , H01J37/08
摘要： Provided is a machining technology to obtain a desired machining content while suppressing a possibility of causing a redeposition in a machining surface. The invention is directed to provide an ion milling device which includes an ion source which emits an ion beam, a sample holder which holds a sample, and a sample sliding mechanism which slides the sample holder in a direction including a normal direction of an axis of the ion beam.

3. 发明申请

US20190237291A1 ION MILLING DEVICE, lON SOURCE, AND ION MILLING METHOD 审中-公开
公开(公告)号：US20190237291A1
公开(公告)日：2019-08-01
申请号：US16381938
申请日：2019-04-11
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Kengo ASAI , Hiroyasu SHICHI , Hisayuki TAKASU , Toru IWAYA
IPC分类号： H01J37/08 , H01J37/305 , H01J37/30 , H01J27/04
CPC分类号： H01J37/08 , H01J27/04 , H01J37/30 , H01J37/305 , H01J2237/081 , H01J2237/082 , H01J2237/303
摘要： To provide an ion gun of a penning discharge type capable of achieving a milling rate which is remarkably higher than that in the related art, an ion milling device including the same, and an ion milling method.An ion generation unit includes a cathode that emits electrons, an anode that is provided within the ion generation unit and has an inner diameter of 5.2 mm or less, and magnetic-field generation means using a permanent magnet of which a maximum energy product ranges from 110 kJ/m3 to 191 kJ/m3.

4. 发明申请

US20190272973A1 CHARGED PARTICLE BEAM DEVICE 审中-公开
公开(公告)号：US20190272973A1
公开(公告)日：2019-09-05
申请号：US16320525
申请日：2016-08-09
申请人： Hitachi High-Technologies Corporation
发明人： Asako KANEKO , Hisayuki TAKASU , Toru IWAYA
IPC分类号： H01J37/20 , H01J37/305 , H01J37/09
摘要： A charged particle beam device that can improve machining position precision in section processing using a shielding plate is provided. The invention is directed to a charged particle beam device including: an ion source (101); a sample stand (106) on which a sample (107) is mounted; a shielding plate (108) placed so that a portion of the sample (107) is exposed when seen from the ion source (101); and tilt units (123, 124) that tilt the sample (107) and the shielding plate (108) relative to the irradiation direction of an ion beam (102) from the ion source (101) to the sample (107).

5. 发明申请

US20170221671A1 ION MILLING DEVICE, ION SOURCE AND ION MILLING METHOD 审中-公开
公开(公告)号：US20170221671A1
公开(公告)日：2017-08-03
申请号：US15500449
申请日：2015-07-29
申请人： Hitachi High-Technologies Corporation
发明人： Kengo ASAI , Hiroyasu SHICHI , Hisayuki TAKASU , Toru IWAYA
IPC分类号： H01J37/08 , H01J27/04 , H01J37/30
CPC分类号： H01J37/08 , H01J27/04 , H01J37/30 , H01J37/305 , H01J2237/081 , H01J2237/082 , H01J2237/303
摘要： To provide an ion gun of a penning discharge type capable of achieving a milling rate which is remarkably higher than that in the related art, an ion milling device including the same, and an ion milling method.An ion generation unit includes a cathode that emits electrons, an anode that is provided within the ion generation unit and has an inner diameter of 5.2 mm or less, and magnetic-field generation means using a permanent magnet of which a maximum energy product ranges from 110 kJ/m3 to 191 kJ/m3.

6. 发明申请

US20160163508A1 ION MILLING DEVICE 审中-公开
公开(公告)号：US20160163508A1
公开(公告)日：2016-06-09
申请号：US15011980
申请日：2016-02-01
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Toru IWAYA , Hirobumi MUTO , Hisayuki TAKASU , Atsushi KAMINO , Asako KANEKO
IPC分类号： H01J37/305 , H01J37/304 , H01J37/30
CPC分类号： H01J37/3053 , H01J37/20 , H01J37/3005 , H01J37/3007 , H01J37/304 , H01J2237/20207 , H01J2237/20214 , H01J2237/26
摘要： An ion milling device of the present invention is provided with a tilt stage (8) which is disposed in a vacuum chamber (15) and has a tilt axis parallel to a first axis orthogonal to an ion beam, a drive mechanism (9, 51) which has a rotation axis and a tilt axis parallel to a second axis orthogonal to the first axis and rotates or tilts a sample (3), and a switching unit which enables switching between a state in which the ion beam is applied while the sample is rotated or swung while the tilt stage is tilted, and a state in which the ion beams is applied while the tilt stage is brought into an untilted state and the sample is swung. Consequently, the ion milling device capable of performing cross-section processing and flat processing of the sample in the same vacuum chamber is implemented.

7. 发明申请

US20180301318A1 ION MILLING DEVICE 审中-公开
公开(公告)号：US20180301318A1
公开(公告)日：2018-10-18
申请号：US16012423
申请日：2018-06-19
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Toru IWAYA , Hirobumi MUTO , Hisayuki TAKASU , Atsushi KAMINO , Asako KANEKO
IPC分类号： H01J37/305 , H01J37/30 , H01J37/304 , H01J37/20
摘要： An ion milling device of the present invention is provided with a tilt stage (8) which is disposed in a vacuum chamber (15) and has a tilt axis parallel to a first axis orthogonal to an ion beam, a drive mechanism (9, 51) which has a rotation axis and a tilt axis parallel to a second axis orthogonal to the first axis and rotates or tilts a sample (3), and a switching unit which enables switching between a state in which the ion beam is applied while the sample is rotated or swung while the tilt stage is tilted, and a state in which the ion beams is applied while the tilt stage is brought into an untilted state and the sample is swung. Consequently, the ion milling device capable of performing cross-section processing and flat processing of the sample in the same vacuum chamber is implemented.

8. 发明申请

US20170221677A1 ION MILLING DEVICE AND ION MILLING METHOD 审中-公开
公开(公告)号：US20170221677A1
公开(公告)日：2017-08-03
申请号：US15500392
申请日：2015-07-29
申请人： Hitachi High-Technologies Corporation
发明人： Kengo ASAI , Hiroyasu SHICHI , Hisayuki TAKASU , Toru IWAYA
IPC分类号： H01J37/302 , H01J37/08 , H01J37/305
CPC分类号： H01J37/302 , H01J27/04 , H01J37/08 , H01J37/243 , H01J37/304 , H01J37/305 , H01J37/3053 , H01J2237/08 , H01J2237/30461 , H01J2237/3151
摘要： To provide an ion gun of a penning discharge type capable of narrowing a beam with a low ion beam current at a low acceleration voltage, an ion milling device including the same, and an ion milling method.An ion milling device that controls half width of a beam profile of an ion beam with which a sample is irradiated from an ion gun to be in a range of 200 μm to 350 μm. The device includes: the ion gun that ionizes a gas supplied from the outside, and emits an ion beam; a gas-flow-rate varying unit that varies a flow rate of the gas supplied to the ion gun; and a current measurement unit that measures a current value of the ion beam emitted from the ion gun. The gas-flow-rate varying unit sets a gas flow rate to be higher than a gas flow rate at which the ion beam current has a maximum value based on the current value measured by the current measurement unit and the flow rate of the gas determined by the gas-flow-rate varying unit.

9. 发明申请

US20160126057A1 Ion Milling Device 有权
标题翻译：离子铣削装置
公开(公告)号：US20160126057A1
公开(公告)日：2016-05-05
申请号：US14890936
申请日：2014-04-28
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Asako KANEKO , Hisayuki TAKASU , Hirobumi MUTOU , Toru IWAYA , Mami KONOMI
IPC分类号： H01J37/20 , G01K1/14 , H01J37/30
CPC分类号： H01J37/20 , G01K1/14 , G01N1/32 , H01J37/30 , H01J37/3002 , H01J37/3023 , H01J37/3053 , H01J2237/002 , H01J2237/026 , H01J2237/08 , H01J2237/2001 , H01J2237/2007 , H01J2237/20271 , H01J2237/20285 , H01J2237/317
摘要： The present invention aims at providing an ion milling apparatus for emitting an ion beam to a sample to process the sample and capable of controlling the temperature of the sample with high accuracy regardless of deformation or the like of the sample being irradiated with the ion beam, and proposes an ion milling apparatus including at least one of a shield holding member for supporting a shield for shielding the sample from the ion beam while exposing a part of the sample to the ion beam; a shifting mechanism for shifting a surface of the sample stand in contact with the sample following deformation of the sample during irradiation with the ion beam, the shifting mechanism having a temperature control mechanism for controlling temperature of at least one of the shield holding member and the sample stand; and a sample holding member disposed between the shield and the sample, the sample holding member deforming following deformation of the sample during irradiation with the ion beam, for example.
摘要翻译：本发明的目的在于提供一种离子铣削装置，用于将离子束发射到样品以处理样品并且能够高精度地控制样品的温度，而不管样品被离子束照射的变形等，并提出了一种离子铣削装置，其包括屏蔽保持构件中的至少一个，用于支撑用于将样品从离子束屏蔽的屏蔽，同时将一部分样品暴露于离子束; 移动机构，用于使样品台的表面在与离子束照射期间发生变形之后与试样接触而移动，所述移动机构具有温度控制机构，用于控制至少一个屏蔽保持部件和样品台以及设置在所述屏蔽体和所述试样之间的样品保持部件，所述样品保持部件例如在用所述离子束照射时，随着所述样品的变形而发生变形。

10. 发明申请

US20210287871A1 ION MILLING APPARATUS 有权
公开(公告)号：US20210287871A1
公开(公告)日：2021-09-16
申请号：US16316289
申请日：2016-07-14
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Kengo ASAI , Hiroyasu SHICHI , Toru IWAYA , Hisayuki TAKASU
IPC分类号： H01J37/08 , H01J37/09 , H01J37/305
摘要： To provide an ion milling apparatus adapted to suppress the contamination of a beam forming electrode. The ion milling apparatus includes: an ion gun containing therein a beam forming electrode for forming an ion beam; a specimen holder for fixing a specimen to be processed by irradiation of an ion beam; a mask for shielding a part of the specimen from the ion beam; and an ion gun controller for controlling the ion gun.

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