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1. 发明申请

US20150062759A1 CAPPING MATERIALS FOR MAGNETIC READ HEAD SENSOR 有权
标题翻译：磁头读取头传感器的封盖材料
公开(公告)号：US20150062759A1
公开(公告)日：2015-03-05
申请号：US14012595
申请日：2013-08-28
申请人： HGST Netherlands B.V.
发明人： Chando PARK , Zheng GAO , Sangmun OH , Susumu OKAMURA , James Mac FREITAG
IPC分类号： G11B5/39
CPC分类号： G11B5/39 , G11B5/3909 , G11B5/3912
摘要： Embodiments of the present invention generally relate to a magnetic head having a sensor structure comprising a pinned layer, a spacer layer, a free layer and a capping structure. The free layer has a topmost layer comprising CoB and the capping structure comprises an X layer, where X is an element such as Hf, Zr, Ti, V, Nb, or Ta.
摘要翻译：本发明的实施例一般涉及具有包括钉扎层，间隔层，自由层和封盖结构的传感器结构的磁头。自由层具有包含CoB的最上层，并且封盖结构包括X层，其中X是诸如Hf，Zr，Ti，V，Nb或Ta的元素。

2. 发明申请

US20140377589A1 NARROW READ-GAP HEAD WITH RECESSED AFM 有权
公开(公告)号：US20140377589A1
公开(公告)日：2014-12-25
申请号：US13923624
申请日：2013-06-21
申请人： HGST Netherlands B.V.
发明人： James Mac FREITAG , Zheng GAO
IPC分类号： G11B5/31
CPC分类号： G11B5/3143 , G11B5/3906 , G11B5/398 , Y10T428/11 , Y10T428/115 , Y10T428/1193
摘要： The embodiments of the present invention relate to a magnetic read head with pinned layers extending to the ABS of the read head and in contact with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. The recessed antiferromagnetic layer may be disposed above or below the pinned layer structure and provides a pinning field to prevent amplitude flipping in head operation. In these embodiments of the present invention, the read gap of the sensor, that is the distance between the highly permeable, magnetically soft upper and lower shield layers at the ABS, is reduced by the thickness of the antiferromagnetic layer.
摘要翻译：本发明的实施例涉及一种具有延伸到读取头的ABS并且与相对于读取头的ABS凹陷的反铁磁层接触的固定层的磁读头。凹陷的反铁磁层可以设置在被钉扎层结构的上方或下方，并提供钉扎场以防止头部操作中的振幅翻转。在本发明的这些实施例中，传感器的读取间隙，即在ABS处的高度可渗透的，软的软的上下屏蔽层之间的距离减小了反铁磁性层的厚度。

3. 发明申请

US20170018703A1 MAGNETORESISTIVE DEVICE WITH LAMINATE INSERTION LAYER IN THE FREE LAYER 有权
标题翻译：具有层状插入层的磁性器件在自由层中
公开(公告)号：US20170018703A1
公开(公告)日：2017-01-19
申请号：US14797759
申请日：2015-07-13
申请人： HGST Netherlands B.V.
发明人： James FREITAG , Zheng GAO
IPC分类号： H01L43/02 , H01L43/10 , H01L43/12 , H01L43/08
CPC分类号： H01L27/222 , G11B5/3906 , G11B5/3948 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A magneto-resistive (MR) device and process for making the MR device are disclosed. The MR device has a pinned layer, a spacer layer proximate to the pinned layer, and a free layer proximate to the spacer layer. The free layer comprises a first magnetic layer proximate to the spacer layer, the first magnetic layer having a positive magnetostriction, a laminate magnetic insertion layer proximate to the first magnetic layer, and a second magnetic layer proximate to the magnetic insertion layer, the second magnetic layer having a negative magnetostriction. The laminate magnetic insertion layer has a first magnetic sublayer and a first non-magnetic sublayer proximate to the first magnetic sublayer. With the disclosed laminate magnetic insertion layer, the free layer has a low overall magnetostriction and results in a MR device with a high MR ratio.
摘要翻译：公开了用于制造MR器件的磁阻（MR）器件和工艺。 MR装置具有钉扎层，靠近被钉扎层的间隔层和靠近间隔层的自由层。自由层包括靠近间隔层的第一磁性层，具有正磁致伸缩的第一磁性层，靠近第一磁性层的层叠磁性插入层和靠近磁性插入层的第二磁性层，第二磁性层层具有负的磁致伸缩。叠层磁性插入层具有第一磁性子层和靠近第一磁性子层的第一非磁性子层。利用所公开的层叠磁性插入层，自由层具有低的总体磁致伸缩，并导致具有高MR比的MR器件。

4. 发明申请

US20150248907A1 RECESSED IRMN READER SENSOR DESIGN WITH HIGH HK APPLIED TO BOTH REFERENCE AND PIN LAYERS 审中-公开
标题翻译：接收IRMN读取器传感器设计，高HK适用于两个参考和引脚层
公开(公告)号：US20150248907A1
公开(公告)日：2015-09-03
申请号：US14194613
申请日：2014-02-28
申请人： HGST Netherlands B.V.
发明人： James Mac FREITAG , Zheng GAO , Simon Huangchung LIAO , Suping SONG
IPC分类号： G11B5/60 , G11B5/11
CPC分类号： G11B5/3116 , G11B5/39 , G11B5/3906 , G11B5/3909
摘要： The embodiments disclosed generally relate to a magnetic read head having a recessed antiferromagnetic layer and a recessed pinned magnetic layer. The recessed pinned magnetic layer is only partially recessed from the MFS, but the recess amount is the same amount as the antiferromagnetic layer. The recess is between about 50 nm and about 200 nm. Processing the pinned magnetic layer and the antiferromagnetic layer and its seed layers at an oblique angle results in an increase in the anisotropy field.
摘要翻译：所公开的实施例通常涉及具有凹入的反铁磁层和凹陷的钉扎磁性层的磁读头。凹陷的钉扎磁性层仅从MFS部分凹进，但是凹陷量与反铁磁性层相同。凹陷在约50nm至约200nm之间。以倾斜角度处理钉扎磁性层和反铁磁层及其种子层导致各向异性场的增加。

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