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1. 发明申请

US20160163338A1 TUNNELING MAGNETORESISTIVE (TMR) SENSOR WITH A SOFT BIAS LAYER 审中-公开
标题翻译：具有软偏移层的隧道磁传感器（TMR）传感器
公开(公告)号：US20160163338A1
公开(公告)日：2016-06-09
申请号：US14559856
申请日：2014-12-03
申请人： HGST Netherlands B.V.
发明人： Kuok S. Ho , Nian Ji , Quang Le , Ying Li , Simon H. Liao , Guangli Liu , Xiaoyong Liu , Suping Song , Shuxia Wang , Hualiang Yu
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3932 , G11B5/3909 , G11B5/3912
摘要： An apparatus according to one embodiment includes a read sensor. The read sensor has an antiferromagnetic layer (AFM), a first antiparallel magnetic layer (AP1 ) positioned above the AFM layer in a first direction oriented along a media-facing surface and perpendicular to a track width direction, a non-magnetic layer positioned above the AP1 in the first direction, a second antiparallel magnetic layer (AP2) positioned above the non-magnetic layer in the first direction, a harrier layer positioned above the AP2 in the first direction, and a free layer positioned above the barrier layer in the first direction. A soft bias layer is positioned behind at least a portion of the free layer in an element height direction normal to the media-facing surface, the soft bias layer including a soft magnetic material configured to compensate for a magnetic coupling of the free layer with the AP2.
摘要翻译：根据一个实施例的装置包括读取传感器。读取传感器具有反铁磁层（AFM），位于AFM层上方的第一反向磁性层（AP1），沿着面向介质的表面定向并垂直于轨道宽度方向的第一方向，位于上方的非磁性层在第一方向上的AP1，位于第一方向上的非磁性层上方的第二反并联磁性层（AP2），位于第一方向上的AP2上方的吸收层和位于第一方向上的阻挡层上方的自由层第一个方向柔性偏置层位于垂直于面向媒体的表面的元件高度方向上位于自由层的至少一部分之后，软偏置层包括软磁材料，其被配置为补偿自由层与 AP2。

2. 发明申请

US20160055868A1 MULTIPLE-INPUT-MULTIPLE-OUTPUT SENSOR DESIGNS FOR MAGNETIC APPLICATIONS 审中-公开
标题翻译：用于磁性应用的多输入多输出传感器设计
公开(公告)号：US20160055868A1
公开(公告)日：2016-02-25
申请号：US14465748
申请日：2014-08-21
申请人： HGST NETHERLANDS B.V.
发明人： Zheng Gao , Lijie Guan , Kuok S. Ho , Suping Song , Shuxia Wang
IPC分类号： G11B5/39 , G01R1/18 , G01R33/09
CPC分类号： G11B5/3912 , G01R1/18 , G01R33/093 , G11B5/3932 , G11B5/3948 , G11B5/397 , G11B5/4886 , G11B2005/3996
摘要： According to one embodiment, a system includes a leading magnetic shield, a first sensor structure above the leading magnetic shield, a first middle magnetic shield above the first sensor structure, a nonmagnetic spacer above the first middle magnetic shield, a second middle magnetic shield above the nonmagnetic spacer, a second sensor structure above the second middle magnetic shield, and a trailing magnetic shield above the second sensor structure. Other systems, methods, and computer program products are described in additional embodiments.
摘要翻译：根据一个实施例，系统包括前导磁屏蔽，位于导磁屏蔽之上的第一传感器结构，位于第一传感器结构之上的第一中间磁屏蔽，位于第一中间磁屏蔽之上的非磁性隔离物，位于第一中间磁屏蔽之上的第二中间磁屏蔽非磁性间隔件，位于第二中间磁屏蔽之上的第二传感器结构，以及位于第二传感器结构之上的尾部磁屏蔽。在另外的实施例中描述了其他系统，方法和计算机程序产品。

3. 发明授权

US09177588B2 Recessed IRMN reader process 有权
标题翻译：嵌入式IRMN阅读器流程
公开(公告)号：US09177588B2
公开(公告)日：2015-11-03
申请号：US14158552
申请日：2014-01-17
申请人： HGST Netherlands B.V.
发明人： James Mac Freitag , Ying Hong , Cherngye Hwang , Stefan Maat , Masaya Nishioka , David John Seagle , Hicham Moulay Sougrati , Shuxia Wang , Yi Zheng , Honglin Zhu
IPC分类号： H01L21/00 , G11B5/85 , G11B5/855 , G11B5/11 , G11B5/60
CPC分类号： G11B5/85 , G11B5/11 , G11B5/3912 , G11B5/398 , G11B5/6082 , G11B5/855 , H01L43/08 , H01L43/12
摘要： The embodiments of the present invention relate to a method for forming a magnetic read head with pinned layers extending to the ABS of the read head and magnetically coupled with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. Portions of the antiferromagnetic layer and a magnetic layer that are extending to the ABS are removed, exposing a shield. A shielding material is formed on the exposed shield and a seed layer is formed on the shield and on or over a portion of the remaining antiferromagnetic layer. A pinned layer structure is formed on the seed layer and the magnetic layer.
摘要翻译：本发明的实施例涉及一种用于形成具有延伸到读取头的ABS的固定层的磁性读取头的磁性读取头，并且与相对于读取头的ABS凹陷的反铁磁层磁耦合。去除反铁磁层的一部分和延伸到ABS的磁性层，露出屏蔽。屏蔽材料形成在暴露的屏蔽上，并且在屏蔽上形成种子层，并且在剩余的反铁磁性层的一部分上或上方形成种子层。钉扎层结构形成在种子层和磁性层上。

4. 发明申请

US20150221328A1 MAGNETIC READ SENSOR WITH BAR SHAPED AFM AND PINNED LAYER STRUCTURE AND SOFT MAGNETIC BIAS ALIGNED WITH FREE LAYER 审中-公开
标题翻译：磁性读取传感器，带有形状的AFM和PINNED层结构和软磁性偏置与自由层对齐
公开(公告)号：US20150221328A1
公开(公告)日：2015-08-06
申请号：US14170495
申请日：2014-01-31
申请人： HGST Netherlands B.V.
发明人： Quang Le , Simon H. Liao , Guangli Liu , Stefan Maat , Shuxia Wang
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , G01R33/098 , G11B5/3163 , G11B5/398 , G11B2005/3996
摘要： A magnetic sensor having a structure that optimizes magnetic pinning strength and magnetic free layer stability. The sensor includes a sensor stack having a magnetic free layer that extends to a first stripe height and a pinned layer that extends beyond the first stripe height to a second stripe height. Magnetic bias structures are formed at the sides of the free layer and are each formed upon a non-magnetic fill layer that raises the bias layer to the level of the free layer, the non-magnetic fill layer being at the level of the pinned layer in the sensor stack. The fill layer allows the free layer stripe height to be defined in a partial mill process while allowing the pinned layer to extend beyond the free layer stripe height and also advantageously allows the bias layers to have a stripe height that is aligned with the free layer stripe height.
摘要翻译：具有优化磁性钉扎强度和磁自由层稳定性的结构的磁传感器。传感器包括具有延伸到第一条带高度的无磁性层和延伸超过第一条纹高度至第二条纹高度的钉扎层的传感器堆叠。磁偏置结构形成在自由层的侧面，并且各自形成在非磁性填充层上，该非磁性填充层将偏置层升高到自由层的高度，非磁性填充层处于被钉扎层的水平在传感器堆栈中。填充层允许在部分研磨过程中限定自由层条纹高度，同时允许钉扎层延伸超过自由层条纹高度，并且还有利地允许偏置层具有与自由层条纹对准的条纹高度高度。

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