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    • 2. 发明授权
    • Extended spin torque oscillator
    • 扩展自旋扭矩振荡器
    • US09336797B2
    • 2016-05-10
    • US14290768
    • 2014-05-29
    • HGST Netherlands B.V.
    • Masukazu IgarashiMasato MatsubaraKeiichi NagasakaYo SatoMasato ShiimotoMasashige Sato
    • G11B5/00G11B5/127
    • G11B5/00G11B5/1278G11B5/23G11B5/235G11B5/3146G11B2005/0024
    • The present disclosure generally relates to a high-frequency oscillator for use in a recording device having a microwave-assisted magnetic recording head. The microwave-assisted magnetic recording head achieves a large assist effect by using an extended spin torque oscillator disposed between a main magnetic pole and a pole opposite the main magnetic pole. The spin torque oscillator obtains a strong high-frequency magnetic field and comprises a first non-magnetic spin scatterer, a reference layer, a first non-magnetic spin transfer layer, a first magnetic field generating layer, a second non-magnetic spin transfer layer, a second magnetic field generating layer, and a second non-magnetic spin scatterer. The spin torque oscillator has a drive current flowing though in the direction from the first magnetic field generating layer to the reference layer.
    • 本公开总体上涉及用于具有微波辅助磁记录头的记录装置中的高频振荡器。 微波辅助磁记录头通过使用设置在主磁极和与主磁极相对的极之间的扩展旋转扭矩振荡器来实现大的辅助效果。 旋转扭矩振荡器获得强的高频磁场,并且包括第一非磁性旋转散射体,参考层,第一非磁性自旋转移层,第一磁场产生层,第二非磁性自旋转移层 ,第二磁场产生层和第二非磁性旋转散射体。 自旋转矩振荡器具有沿着从第一磁场产生层到参考层的方向流动的驱动电流。
    • 3. 发明授权
    • Stabilizing layer for a spin torque oscillator (STO)
    • 自旋扭矩振荡器稳定层(STO)
    • US09099107B1
    • 2015-08-04
    • US14604635
    • 2015-01-23
    • HGST Netherlands B.V.
    • Masukazu IgarashiKeiichi NagasakaSusumu OkamuraYo SatoMasashige SatoMasato Shimoto
    • G11B5/31
    • G11B5/31G11B5/1278G11B5/235G11B5/3146G11B2005/0024
    • In one embodiment, a spin torque oscillator (STO) includes a reference layer having a magnetization that is capable of free in-plane rotation, a field generation layer (FGL) including at least one magnetic film having an easy magnetization plane effectively in a film plane, wherein a magnetization of the FGL is capable of in-plane rotation, and a stabilizing layer (STL) positioned on a side of the FGL opposite the reference layer, the STL including a magnetic film having an easy magnetization plane effectively in a film plane, wherein a magnetization of the STL is capable of in-plane rotation, wherein a product of a saturation magnetization of the STL multiplied by a thickness of the STL is less than half a product of a magnetization of the FGL multiplied by a thickness of the FGL.
    • 在一个实施例中,自旋转矩振荡器(STO)包括具有能够自由进行平面内旋转的磁化的参考层,在膜中有效地包括至少一个具有易磁化平面的磁性膜的场产生层(FGL) 平面,其中所述FGL的磁化能够进行平面内旋转,并且位于所述FGL的与所述参考层相对的一侧的稳定层(STL),所述STL在膜中有效地包括具有易磁化平面的磁性膜 平面,其中STL的磁化能够进行平面内旋转,其中STL的饱和磁化强度乘以STL的厚度的乘积小于FGL的磁化强度的乘积的乘积乘以 FGL。
    • 5. 发明授权
    • AF-mode STO with negative Hk spin polarization layer
    • 具有负Hk自旋极化层的AF模式STO
    • US09406315B2
    • 2016-08-02
    • US14179358
    • 2014-02-12
    • HGST Netherlands B.V.
    • Masato ShiimotoMasukaza IgarashiKeiichi NagasakaYo Sato
    • G11B5/235G11B5/31G11B5/127G11B5/00
    • G11B5/1278G11B5/235G11B5/3146G11B2005/0024
    • The embodiments disclosed generally relate to an STO structure for a magnetic head. The STO structure has an FGL having a greater thickness than the SPL. The SPL may have multiple layers. In one embodiment, a MAMR head comprises a main pole; a trailing shield; and an STO coupled between the main pole and the trailing shield. The STO includes: a first magnetic layer having a first thickness; a non-magnetic spacer layer coupled to the first magnetic layer; and a second magnetic layer having a second thickness and coupled to the non-magnetic spacer layer, wherein the first thickness is greater than the second thickness, wherein a current is charged from the first magnetic layer to the second magnetic layer, and wherein a vertical magnetic anisotropy field of the second magnetic film is less than 0 kOe.
    • 所公开的实施例通常涉及用于磁头的STO结构。 STO结构具有比SPL更大的厚度的FGL。 SPL可能有多个层。 在一个实施例中,MAMR头包括主极; 后盾 以及耦合在主极和后盾之间的STO。 STO包括:具有第一厚度的第一磁性层; 耦合到所述第一磁性层的非磁性间隔层; 以及具有第二厚度并耦合到非磁性间隔层的第二磁性层,其中所述第一厚度大于所述第二厚度,其中电流从所述第一磁性层充电到所述第二磁性层,并且其中垂直 第二磁性膜的磁各向异性场小于0kOe。
    • 10. 发明授权
    • Low Bs spin-polarizer for spin torque oscillator
    • 低Bs自旋偏振器用于自旋扭矩振荡器
    • US09230569B1
    • 2016-01-05
    • US14555484
    • 2014-11-26
    • HGST Netherlands B.V.
    • Masato ShimotoMasukazu IgarashiKeiichi NagasakaYo SatoSusumu OkamuraMasashige Sato
    • G11B5/147
    • G11B5/147G11B5/314G11B2005/0024
    • In one embodiment, a magnetic head includes a main magnetic pole positioned configured to generate a writing magnetic field when current is applied to a write coil, and a spin torque oscillator (STO) located adjacent the main magnetic pole, the STO being configured to generate a high frequency magnetic field when current is applied thereto, wherein the high frequency magnetic field is generated simultaneously to the writing magnetic field to assist in reversing magnetization of a magnetic recording medium. The STO includes: a spin polarization layer (SPL), a field generation layer (FGL) positioned adjacent the SPL, and one or more interlayers positioned between the SPL and the FGL, and a magnetization easy axis of the SPL is positioned in an in-plane direction such that the SPL has no perpendicular magnetic anisotropy.
    • 在一个实施例中,磁头包括主磁极,其被配置为当电流施加到写入线圈时产生写入磁场,以及位于主磁极附近的自旋扭矩振荡器(STO),STO被配置为产生 当施加电流时的高频磁场,其中与写入磁场同时产生高频磁场,以帮助磁记录介质的磁化反转。 STO包括:位于SPL附近的自旋极化层(SPL),场产生层(FGL)和位于SPL与FGL之间的一个或多个夹层,并且SPL的易磁化轴位于 平面方向使得SPL没有垂直的磁各向异性。